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Array substrate

A technology of array substrates and polar plates, which is applied in nonlinear optics, instruments, optics, etc., can solve the problems of weakening the anti-static impact ability of products and compressing wiring space, etc.

Active Publication Date: 2017-09-29
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] A common problem faced by existing GOA narrow-frame liquid crystal display devices is that the wiring space for anti-static shock on the display array substrate is severely compressed, thus weakening the product's ability to prevent static shock

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] by Figure 4 The protected area is cut at the position shown by AA`, and the film layer structure of the protected area of ​​the array substrate in this embodiment is as follows: Figure 5 Show, Figure 5 Middle 56 is the bottom substrate, generally made of glass, and can also be made of organic plastic. 55 is the buffer layer, which is generally made of SiO2 film and SiNx film, and the SiO2 film thickness is SiNx film thickness is 54 is the gate insulation layer, generally made of SiO2, with a thickness of 53 is the interlayer dielectric layer (ILD layer), which is generally made of SiO2 film and SiNx film, and the thickness of the two films is 52 is a planarization layer (PLN layer), and its thickness is generally The function of the planarization layer in the display area is mainly to isolate the interference between the pixel electrode layer (ITO) and the data line. 51 is a protective layer (PV layer), generally made of SiNx, with a thickness of In the ...

Embodiment 2

[0075] The film layer structure of this embodiment is as Figure 9 As shown, the planar structure diagram of each film layer is shown in Figures 10a-10c shown. The structure and characteristics of each film layer in this embodiment can refer to Embodiment 1, and will not be repeated here. Further, as Figure 9 and Figure 10a As shown, 101 is the first wiring, and 102 is the first part of the second wiring (a part of the second wiring), both of which are formed by the third metal layer L3. The width of the first wiring 101 and the first part of the wiring 102 is preferably 10-30 μm, the distance between the first wiring 101 and the first part of the wiring 102 is preferably 5-10 μm, and the distance between the first part of the wiring 102 and the edge of the array substrate The distance is preferably 20-80 μm.

[0076] The difference between this embodiment and Embodiment 1 is that the second part of the second routing 103 (another part of the second routing) is formed ...

Embodiment 3

[0084] The film layer structure of this embodiment is as Figure 13 As shown, the planar structure of each film layer is as follows Figure 14a , 14b shown. The structure and characteristics of each film layer in this embodiment can refer to Embodiment 1, and will not be repeated here.

[0085] Such as Figure 13 and Figure 14a As shown, 141 is a first wiring, 142 is a second wiring, both of which are formed by the third metal layer L3. The width of the first wiring 141 and the second wiring 142 is preferably 10-30 μm, the distance between the second wiring 142 and the edge of the array substrate is preferably 20-80 μm, and the distance between them is preferably 5-10 μm.

[0086] Such as Figure 14b As shown, the second metal layer L2 is used to form the first metal region with a specific pattern. The first metal area includes a plurality of first electrode lead wires 143 and a plurality of second electrode lead wires 144 connected to the first electrode lead wires 14...

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Abstract

The invention discloses an array substrate. The array substrate comprises a display area and a GOA (gate on array) circuit area on the outer periphery of the display area. The edge of the array substrate is provided with a static shock prevention protective area around the display area and the GOA circuit area. A first line and at least one second line are arranged in the protective area; the first line is positioned on one side close to the display area and the GOA circuit area and connected with a ground terminal; the second line is positioned on one side close to the edge of the array substrate and is in a suspended state, and the second line is connected with the first line through a capacitor. Since the grounded first line and the at least one suspended second line are arranged at the edge of the array substrate and connected through the capacitor, when reaching the array substrate, static shock first passes through the at least one second line on the outer side and is buffered through the capacitor to finally act on the first line on the inner side, damage risks of the first line can be reduced beneficially, and static protection performance of the array substrate is improved.

Description

technical field [0001] The invention belongs to the field of display technology, in particular to an array substrate. Background technique [0002] Displays made of low-temperature polysilicon thin film transistors, such as LTPS liquid crystal displays or organic light-emitting diode OLED (Organic Light-Emitting Diode) displays driven by low-temperature polysilicon thin film transistor arrays, can have the advantages of thinner and lower energy consumption. At the same time, due to the device characteristics of low-temperature polysilicon thin film transistors, GOA (Gate on array) technology can be used to integrate the scanning line driver IC on the glass substrate, and cancel the attachment of the scanning line driver IC, which can reduce production costs and have It is conducive to the production of narrow bezel displays to meet the production needs of narrow bezel products in the market. Therefore, low temperature polysilicon technology (Low Temperature Poly-silicon, LT...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1362
CPCG02F1/136204
Inventor 李金磊文松贤
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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