106results about How to "Reduced risk of breakdown" patented technology

The invention discloses a safe operation method of active voltage reduction for a ground fault phase of a non-effective grounding system, and the safe operation method is applied to the ground fault safe operation of a neutral point non-effective grounding generator or power distribution network. When a single-phase ground fault occurs, an adjustable current source is applied additionally between a bus at a non-effective grounding system side and the ground, or between a circuit and the ground, or between a neutral point and the ground, or between a shunting tap at a transformer non-effective grounding system side winding and the ground, to adjust the injected current magnitude and phase and further reduce the fault phase voltage, so that the fault point voltage is lower than the ground arc continuous combustion voltage to meet the long-term non-stop safe operation requirement. According to the invention, the fault phase voltage is reduced to a non-zero safe operation value, so the permanent single-phase earth fault current is suppressed, the rising amplitude of the non-fault phase voltage is limited, the risk of non-fault phase insulation breakdown is reduced, the personal safety and equipment security risks are reduced, the occurrence of power outages is effectively prevented, and power supply reliability and security are greatly improved.

The invention discloses a system for monitoring the voltage of a fuel battery, comprising a switch network unit, a data acquisition unit, an isolated communication interface unit and a main controller. The fuel battery is divided into a plurality of fuel battery sets; one fuel battery set together with the switch network unit, the data acquisition unit, the control unit and the isolated communication interface unit forms a voltage monitor module. The single batteries of the fuel battery unit is connected to the switch network unit which gates the single batteries one by one and transmit the a voltage signal to the data acquisition unit; the output end of the data acquisition unit is connected to the control unit which provides a voltage signal to the main controller through the isolated communication interface unit; the main controller provides a control signal to the control unit through the isolated communication interface unit to uniquely gate the monitor module. The invention reduces the monitoring cost and ensures effective monitor of the voltage of the fuel battery.

The invention discloses a liquid crystal display device. The liquid crystal display device includes a driving chip, a backlight structure and a metal support part; the backlight structure includes a flexible printed circuit board, the flexible printed circuit board includes a luminous zone, and a plurality of light emitting diodes are arranged in the luminous zone; the flexible printed circuit board includes a first protruding end a second protruding end, the first protruding end includes at least one port for being electrically connected with the driving chip, and the second protruding end includes a conductive zone; a grounding wire surrounding the luminous zone is arranged on the flexible printed circuit board, the grounding wire is electrically connected with the conductive zone, and the conductive zone is electrically connected with the metal support part. According to the liquid crystal display device, static electricity around the backlight structure can be conducted on the metal support part of the liquid crystal display device, the risk is reduced that the light emitting diodes are broken down due to the static electricity accumulated on the flexible printed circuit board, and a good static electricity prevention effect can be achieved.

The use of enamel as dielectric intermediate layer in the manufacture of heating elements is known. The dielectric enamel layer is herein arranged on a generally metal substrate for heating, after which metal heating tracks are arranged on the dielectric enamel layer by means of silkscreen techniques. The invention relates to an improved heating element. The invention also relates to a liquid container provided with such a heating element.

Arrangement at an electric machine, particularly motor, generator, or actuator, with a stator with teeth (11, 12) carrying coils (15), particularly one layer, for concentrated windings. A permanent magnetic rotor is movable relatively to the stator (11, 12). The teeth of the stator are arranged for receiving coils (15) with generally rectangular opening. Advantages are achieved if the stator teeth (11, 12) are provided to receive generally identical coils (15) closing the grooves (14, 16). The teeth (11, 12) may be alternating rectangular and converging/diverging toward the top, to provide grooves (14, 16), with parallel sides to enter the coils (15). The converging teeth (22) have preferably a shortened top (23). The grooves are preferably provided to make room for a semi magnetic groove wedge (17, 18) between adjacent teeth.

The invention discloses an inverse E-type radio frequency power amplifier suitable for 5G. The inverse E-type radio frequency power amplifier comprises an input circuit, an input matching and stabilizing network, a filter bias circuit, a transistor, a harmonic control network with parasitic compensation, a fundamental wave matching circuit and an output circuit, wherein the harmonic control network comprises a first microstrip line, a second microstrip line, a third microstrip line and a fourth microstrip line; the input matching and stabilizing network is used for matching source impedance to50 ohms and ensuring that the transistor can stably work in a working frequency band; and the filter bias circuit is used for accessing drain bias voltage and grid bias voltage. The inverse E-type radio frequency power amplifier has the advantages that parasitic parameters of the drain electrode pin of the transistor can be compensated; and on the premise of ensuring good switching characteristics of the inverse E-type radio frequency power amplifier, the influence of higher harmonics is reduced, and the drain voltage and the drain current of the transistor cannot be overlapped and distortedin low-frequency and high-frequency working environments, and the working efficiency is high, and the output performance is good, and the drain peak voltage and the drain peak current of the transistor are low, and the transistor is not easy to break down.

The invention provides an engine starting control system and method of a hybrid vehicle and a vehicle and relates to the technical field of vehicles. Specifically, the engine starting control system of the hybrid vehicle comprises an electric driving system, a fuel driving system, a detection system and a vehicle controller, wherein the electric driving system is used for driving a first driving shaft of the vehicle; the fuel driving system is used for driving a second driving shaft of the vehicle; the detection system is used for detecting information and working conditions inside and outsidethe vehicle; and the vehicle controller is configured to control a first starting mode or a second starting mode to start an engine according to different information and working conditions of the vehicle during starting the engine. According to the engine starting control system and method of the hybrid vehicle and the vehicle, by directly using an existing electric driving system and an existing fuel driving system of the hybrid vehicle, the engine is started by using different modes so as to furthest develop advantages of a vehicle power system configuration; on the premise of not increasing additional parts, an effect similar to ISG or BSG starting is achieved, and purposes of short starting time and oil saving are realized.

The invention provides a high-reliability photoresist glass passivation chip and a processing method thereof, and belongs to the technical field of chip processing. The chip comprises a chip body andgrooves, wherein the grooves are uniformly formed in the chip body, protection layers are arranged in the grooves, each protection layer comprises a silicon atom thin film, an oxygen-doped poly-silicon thin film, a low silicon dioxide thin film, a glass passivation layer and an upper silicon dioxide thin film which are sequentially arranged on a surface of each groove, the glass passivation layeris not connected at the center of the groove, and a cutting line is arranged at a central line of the groove. The processing method comprises the steps of primary photoetching, groove corrosion, photoresist removing, cleaning, silicon atom thin film deposition, oxygen-doped poly-silicon thin film deposition, silicon dioxide thin film deposition, photoresist glass coating, secondary photoetching, photoresist glass sintering, silicon dioxide thin film deposition and post-processing. The chip fabricated by the processing method provided by the invention is high in reliability and long is servicelifetime and is difficult to get failure.

The present disclosure provides a semiconductor device and a manufacturing method therefor. The manufacturing method for a semiconductor device is provided for forming through-holes in a semiconductor device, comprising: forming a plurality of shallow trench isolations in portions of a substrate corresponding to memory cell regions; forming a plurality of gates on surfaces of the portions of the substrate; forming spacers on side walls at both sides of the gates extending in the first direction; depositing a sacrificial layer on the memory cell region; removing portions of the sacrificial layer corresponding to the shallow trench isolations at memory cell drain, and depositing an isolation dielectric on the shallow trench isolations at the memory cell drain to form isolation strips; and removing the remaining sacrificial layer to form bottom through-holes in spaces formed after removing the remaining sacrificial layer.

The invention provides a radio frequency switch circuit comprising a transistor chain composed of M connected transistors, wherein the radio frequency switch circuit further comprises a resistor chain composed of M first resistors connected in series, M connecting points are arranged on the resistor chain, and substrates of the M transistors are sequentially connected to the M connecting points through different second resistors. The invention further provides another radio frequency switch circuit comprising a first resistor chain composed of M first resistors connected in series and a second resistor chain composed of M-N first resistors connected in series, wherein N connecting points are arranged on the first resistor chain, M-N connecting points are arranged on the second resistor chain, the substrates of previous N transistors in the transistor chain are sequentially connected to the N connecting points through a different second resistor, and the substrates of latter M-N transistors are sequentially connected to the M-N connecting points through a different second resistor. The two radio frequency switch circuits can reduce the maximum voltage difference between the source electrodes and the drain electrodes of the transistors, so that the voltage distribution on the transistors is more uniform.

The invention provides a fin transistor and a formation method thereof. The formation method comprises the steps of providing a substrate, wherein the substrate is provided with a initial first fin portion and an initial isolation layer covering the side wall of the initial first fin portion; etching the initial first fin portion by taking the initial isolation layer as a mask, and forming a firstgroove in the initial isolation layer; and forming a first fin portion in the first groove, wherein the thermal conductivity coefficient of a material of the first fin portion is greater than the heat conductivity coefficient of a material of the substrate. The formation method effectively improves the heat transfer between the isolation layer and the substrate, improves a self-heating effect ofthe transistor and improves the electrical performance of a semiconductor device.

The invention discloses a terminal structure of a superconducting cable. The terminal structure comprises a current lead-out tube arranged in a terminal sleeve, one end of the current lead-out tube isconductively connected with the superconducting cable; the other end of the current lead-out tube is exposed from the end part of the terminal sleeve to form an exposed end; a cavity is formed in thecurrent leading-out tube, a leading-out hole communicated with the cavity is formed in the exposed end of the current leading-out tube, a sealing cover is arranged on the leading-out hole, a signal lead is arranged in the cavity of the current leading-out tube in a penetrating mode, and the tail end of the signal lead is led out from the sealing cover. According to the invention, the electric field balance of the superconducting cable terminal is ensured, the signal lead is led out from a low-temperature, high-voltage and high-pressure environment, and the measurement of the temperature of acable conductor and the measurement of other non-electric quantities in a high-voltage region can be realized under the condition that a superconducting cable system is put into operation in a net hanging manner.

The invention discloses a microwave high-power distribution/combination device. The microwave high-power distribution/combination device comprises a bottom plate and a cover plate; the bottom plate is covered with the cover plate; after the bottom plate is covered with the cover plate, the upper end surface of the cover plate is provided with three load ports, and the periphery of the cover plate is provided with five signal ports; the bottom plate includes a first magic H unit, a second magic H unit, a third magic H unit and a connecting block, wherein the connecting block is arranged among the three magic H units, and the four components are arranged in an gapless and integrated manner. According to the microwave high-power distribution/combination device of the invention, based on a microwave high-power capacity structure magic H, the three magic H units are combined together to form a structure shaped like a Chinese character "pin"; the magic H structure is fed into the same waveguide through two transmission lines connected together, so that branch line couplers which have two different work modes are coupled; after simulation optimization design and sample piece processing and debugging are performed on the parameters of the structure, the structure can be applied to a deep space exploration microwave high-power amplifier; and when the structure performs microwave power output, the air breakdown risk of cascaded filters can be lowered, and high-quality spectrum high-power microwave signals can be obtained.

The invention provides a silicon carbide MOSFET power device and a preparation method thereof. The preparation method comprises the steps: providing a first doping type of heavily-doped substrate, andforming a first doping type of lightly-doped epitaxial layer on a first surface; forming a well region in the epitaxial layer; forming a source region surrounding a JFET region in the well region, and forming a contact region in the well region surrounding the source region; performing doping of the first doping type in the defined JFET region to form a JFET buried type doping region; forming a gate structure on the surface of the epitaxial layer, and depositing a surface passivation layer on the surface of the gate structure; and forming a gate metal electrode electrically connected with thegate structure, forming a source metal electrode on the surface of the source region, and forming a drain metal electrode on the second surface of the substrate. The buried type doped region is formed after N-type ion implantation is carried out on the JFET region of a conventional planar gate MOSFET power device, so that the resistance of the JFET region is reduced, the intensity of the electricfield in gate oxide can be prevented from being improved, and the breakdown risk of the gate oxide is reduced.

The invention provides a touch substrate, a manufacture method thereof, and a touch screen, and belongs to the technical field of touch. The touch substrate comprises a touch area and a black matrix graph which surrounds the touch area; the touch substrate is provided with a plurality of touch electrodes, wherein a virtual electrode graph is formed in each gap between the adjacent touch electrodes; and each virtual electrode graph overlapped between the touch electrodes on the black matrix graph consists of a plurality of mutually-insulated virtual electrode blocks.

The invention discloses an induction field intensity enhancement device and method for the tip of an electrostatic spinning spray head, and belongs to the field of electrostatic spinning. The induction field intensity enhancement device mainly comprises a spinning spray head, a first electrode plate, a second electrode plate, a first high-voltage electrode, a grounding electrode and a second high-voltage electrode, wherein the first electrode plate is perforated and penetrates through the spinning spray head, and is flush with the tip of the spinning spray head or is arranged at the same sideat a certain distance from the tip, the second electrode plate is arranged at the opposite side at a certain distance from the tip of the spinning spray head, the spinning spray head is connected withthe grounding electrode, the first electrode plate is connected with the first high-voltage electrode, the second electrode plate is connected with the second high-voltage electrode, two electrifiedelectrode plates make the spray head electrified through induction, formed electric fields are superposed, so that the induction field intensity of the tip of the electrostatic spinning spray head isenhanced, and it can be achieved that two weaker applied voltages are utilized, the induction field intensity of the tip of the spray head is increased while the breakdown risk is reduced, thereby achieving the purposes of further reducing the fiber diameter and increasing the jet flow number of the spinning spray head.

The invention relates to air dust collection equipment and an air purifying device. The air dust collection equipment comprises dust collecting plates, electrode supports, conducting material layers and a voltage providing device, wherein the dust collecting plates are surrounded by plates and are provided with more than one dust collecting channel, and the electrode supports and the outer surfaces of the dust collecting plate form air gaps; the conducting material layers are arranged on the electrode supports and are arranged opposite to the dust collecting plates through the air gaps, and more than one dust collecting plate is arranged between the two adjacent electrode supports; the voltage providing device respectively applies high potential and low potential to the conducting material layers on the two adjacent electrode supports so as to cause the dust collecting plates to adsorb air-charged particles in the dust collecting channels between the two adjacent electrode supports. The dust collecting plates cannot be conductive with a circuit loop or the ground as the air gaps and the conducting material layers are insulated. At the time of electrode without electricity, the polarization electric field of the dust collecting plates can still be maintained for a long time. Meanwhile, the creep age distance between the two adjacent electrodes is increased, therefore the risk that the electrodes are broken down is reduced, and the electrodes can quickly be dried after washing.

The invention provides a vehicle force transmission path front end structure and a vehicle, and the structure comprises a vehicle body cross beam which is disposed at the front end of a vehicle frame;at least one vehicle body energy absorption piece which is arranged on the vehicle body cross beam and is arranged towards the vehicle frame, so that at least one part of energy is absorbed through the vehicle body energy absorption piece during vehicle collision; an LLP cross beam which is arranged in a spaced mode with the vehicle body cross beam, and the LLP cross beam is arranged at the frontend of the auxiliary frame; and at least one LLP energy absorption piece which is arranged on the LLP cross beam and is arranged towards the auxiliary frame, and the LLP cross beam and the LLP energyabsorption piece form an LLP force transmission channel so that collision energy can be further absorbed through the LLP energy absorption piece in the vehicle collision process. According to the vehicle force transmission path front end structure, collision load distribution is optimized, when a vehicle collides, the two force transmission channels can make contact with a counterguard at the same time, the stress pressure difference of the upper portion and the lower portion of a counterguard assessment area is balanced, the breakdown risk caused by a single force transmission path is reduced, and the vehicle collision safety performance is improved.

The invention discloses a radio-frequency LDMOS (laterally diffused metal oxide semiconductor) device. A semiconductor region and a drift region are arranged in an epitaxial layer; a source region is arranged in the semiconductor region; a drain region is arranged in the drift region; a liner oxidation layer is arranged above part of the drift region or above part of the drift region and part of the epitaxial layer; a grid oxidation layer is arranged above part of the source region and part of the semiconductor region or above part of the source region, part of the semiconductor region and part of the epitaxial layer; the liner oxidation layer is thicker than the grid oxidation layer; a polycrystalline silicon grid is arranged above the liner oxidation layer and the grid oxidation layer; the grid consists of a main body, a first extension part and a second extension part; the main body of the grid is only located above the grid oxidation layer, and both the extension parts of the grid are only located above the liner oxidation layer. The invention further discloses a manufacturing method of the radio-frequency LDMOS device. With the adoption of the radio-frequency LDMOS device and the manufacturing method thereof, the reliability of the grid can be improved, the IGSS failure is eliminated, and the yield of the devices is increased.

The invention discloses a control circuit applied to a low power supply voltage radio frequency switch, which comprises an annular oscillator, a first phase inverter, a second phase inverter, a first non-overlapping clock generation circuit, a second non-overlapping clock generation circuit, a positive voltage charge pump, a negative voltage charge pump, a first level conversion circuit and a second level conversion circuit, wherein three output ends of the positive voltage charge pump are respectively connected with the input ends of the first level conversion circuit, the second non-overlapping clock generation circuit and the negative voltage charge pump to be used as a power supply; the invention further discloses another structure, the structure further comprises a band-gap reference and a low dropout regulator, and three output ends of a positive voltage charge pump of the structure are respectively connected with input ends of the first level conversion circuit, the second non-overlapping clock generation circuit and the low dropout regulator to be used as a power supply. According to the structure, the circuit can be driven at a low level, the radio frequency switch can be controlled, and good radio frequency performance can still be kept when power is supplied by a low power source.

The invention provides a vehicle fuel calculation method and system, electronic equipment and a storage medium. The method comprises the steps that gyroscope data of a vehicle, liquid level data of a fuel tank and the fuel injection quantity are collected; judging whether the vehicle is in a stable driving state or a ramp driving state according to the gyroscope data, and if the vehicle is in the stable driving state, calculating the residual fuel quantity of the vehicle according to the liquid level data; and if the vehicle is in the ramp running state, the fuel injection quantity accumulated value during ramp running is calculated according to the fuel injection quantity, and the residual fuel quantity of the vehicle is calculated according to the final residual fuel quantity during stable running and the current fuel injection quantity accumulated value. Compared with the traditional fuel oil algorithm technology which only depends on oil floater detection, the scheme of the invention is more practical, and the residual fuel oil quantity which is more practical can be calculated in more complex road conditions, so that the problem of abnormal fuel oil display of the vehicle during climbing/downhill and cross-country bumping can be solved, the detection accuracy of the residual fuel oil quantity can be improved, and the detection efficiency can be improved. And the vehicle anchoring risk is reduced.