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High-reliability photoresist glass passivation chip and processing method thereof

A glass passivation and processing method technology, applied in electrical components, electrical solid devices, circuits, etc., can solve the problems of short chip service life, easy chip failure, and easy breakdown, so as to achieve long service life and reduce chip failure. risk, avoid the effect of mass aggregation

Inactive Publication Date: 2019-05-14
CHANGZHOUSR SEA ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the existence of tiny cracks, the chip is prone to failure when working in harsh environments
In addition, the existing glass passivation chip is prone to the risk of breakdown on the surface of the groove, resulting in a short service life of the chip

Method used

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  • High-reliability photoresist glass passivation chip and processing method thereof
  • High-reliability photoresist glass passivation chip and processing method thereof
  • High-reliability photoresist glass passivation chip and processing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] A method for processing a highly reliable photoresist glass passivation chip, comprising the following steps:

[0042] S1, one-time photolithography: apply glue, bake, expose, develop and fix on the diffused chip body, complete one-time photolithography, and form a groove corrosion area without photoresist 10 protection on the chip body;

[0043] S2. Groove etching and photoresist removal: Corrosion is carried out in a low-temperature mixed acid at -4°C, and the groove corrosion area 9 is etched to obtain a groove with a required depth, and then the photoresist on the surface of the chip body is removed;

[0044] S3. Cleaning: Clean the chip body with high-purity water, and then dry and arrange the chips with nitrogen gas. From this step, the working environment needs to reach a purification level of more than 10,000 grades;

[0045] S4. Silicon atom film deposition: Deposit a layer of silicon atoms on the surface of the chip body. The silicon atoms will first fill the ...

Embodiment 2

[0056] A method for processing a highly reliable photoresist glass passivation chip, comprising the following steps:

[0057] S1, one-time photolithography: apply glue, bake, expose, develop and fix on the diffused chip body, complete one-time photolithography, and form a groove corrosion area without photoresist 10 protection on the chip body;

[0058] S2. Groove etching and photoresist removal: Corrosion is carried out in a low-temperature mixed acid at -8°C, and the groove corrosion area 9 is etched to obtain a groove with a required depth, and then the photoresist on the surface of the chip body is removed;

[0059] S3. Cleaning: Clean the chip body with high-purity water, and then dry and arrange the chips with nitrogen gas. From this step, the working environment needs to reach a purification level of more than 10,000 grades;

[0060] S4. Silicon atom thin film deposition: Deposit a layer of silicon atoms on the surface of the chip body. The silicon atoms will first fill...

Embodiment 3

[0071] A method for processing a highly reliable photoresist glass passivation chip, comprising the following steps:

[0072] S1, one-time photolithography: apply glue, bake, expose, develop and fix on the diffused chip body, complete one-time photolithography, and form a groove corrosion area without photoresist 10 protection on the chip body;

[0073] S2. Groove etching and photoresist removal: corrode in a low-temperature mixed acid at -10°C, the groove corrosion area 9 is etched to obtain a groove with a required depth, and then remove the photoresist on the surface of the chip body;

[0074] S3. Cleaning: Clean the chip body with high-purity water, and then dry and arrange the chips with nitrogen gas. From this step, the working environment needs to reach a purification level of more than 10,000 grades;

[0075] S4. Silicon atom film deposition: Deposit a layer of silicon atoms on the surface of the chip body. The silicon atoms will first fill the incomplete silicon area ...

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Abstract

The invention provides a high-reliability photoresist glass passivation chip and a processing method thereof, and belongs to the technical field of chip processing. The chip comprises a chip body andgrooves, wherein the grooves are uniformly formed in the chip body, protection layers are arranged in the grooves, each protection layer comprises a silicon atom thin film, an oxygen-doped poly-silicon thin film, a low silicon dioxide thin film, a glass passivation layer and an upper silicon dioxide thin film which are sequentially arranged on a surface of each groove, the glass passivation layeris not connected at the center of the groove, and a cutting line is arranged at a central line of the groove. The processing method comprises the steps of primary photoetching, groove corrosion, photoresist removing, cleaning, silicon atom thin film deposition, oxygen-doped poly-silicon thin film deposition, silicon dioxide thin film deposition, photoresist glass coating, secondary photoetching, photoresist glass sintering, silicon dioxide thin film deposition and post-processing. The chip fabricated by the processing method provided by the invention is high in reliability and long is servicelifetime and is difficult to get failure.

Description

technical field [0001] The invention belongs to the technical field of chip processing, and in particular relates to a highly reliable photoresist glass passivation chip and a processing method thereof. Background technique [0002] The traditional rectifier diode chip is a glass passivation chip, and the groove of the chip body 2 is filled with a glass passivation layer 1 (such as figure 1 As shown), after cutting and splitting, the glass is broken in the middle of the groove by external force, and there are inevitably tiny cracks. Due to the existence of tiny cracks, the chip is prone to failure when working in a harsh environment. In addition, the existing glass passivation chip is prone to the risk of breakdown on the surface of the groove, resulting in a short service life of the chip. Contents of the invention [0003] The purpose of the present invention is to provide a high-reliability photoresist glass passivation chip and its processing method with high reliabi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/488H01L21/311
Inventor 黄小锋宣玉龙周昕屠星宇
Owner CHANGZHOUSR SEA ELECTRONICS
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