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Data writing-in method of magnetic memory

一种磁性存储器、数据写入的技术，应用在非易失性存储和逻辑领域，能够解决限制存储密度等问题，达到势垒击穿的风险降低、效应强、减小数量的效果

Active Publication Date: 2018-09-14
BEIHANG UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, the memory cell of SOT-MRAM has three ports and usually needs to be equipped with two access control transistors, which severely limits the memory density

Method used

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  • Data writing-in method of magnetic memory

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Embodiment Construction

[0066] The substantive features of the present invention are further described with reference to the accompanying drawings. The drawings are all schematic diagrams, and the thicknesses of the various functional layers or regions involved are not actual dimensions, and the resistance and current values ​​in the working mode are also not actual values.

[0067] Detailed exemplary embodiments are disclosed herein, specific structural and functional details are merely representative for purposes of describing exemplary embodiments, therefore, the invention may be embodied in many alternative forms and should not be construed as It is to be construed as being limited only to the exemplary embodiments set forth herein, but to cover all changes, equivalents, and alternatives falling within the scope of the invention.

[0068] The invention proposes a data writing method of a magnetic memory, which can be used not only for constructing a magnetic random access memory, but also for des...

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Abstract

The invention provides a data writing-in method of a magnetic memory. A plurality of magnetic tunnel junctions are manufactured on a heavy metal strip-shaped thin film or an antiferromagnetic strip-shaped thin film. Each magnetic tunnel junction represents a storage unit. Each magnetic tunnel junction is composed of five layers including first ferromagnetic metal, first oxide, second ferromagneticmetal, a first synthetic antiferromagnetic layer and an Xth top end electrode, wherein the value of X is a bit number represented by each magnetic tunnel junction; two ends of the heavy metal strip-shaped thin film or the antiferromagnetic strip-shaped thin film are plated with a first bottom end electrode and a second bottom end electrode respectively. According to the data writing-in method provided by the invention, data writing-in is realized by adopting a manner of combining a self-spinning transfer torque and a self-spinning rail torque; two paths of current need to be applied to the magnetic tunnel junctions, the heavy metal strip-shaped thin film or the antiferromagnetic strip-shaped thin film respectively at the same time. The data writing-in cannot be finished by only one path of the current. According to the data writing-in method provided by the invention, the circuit integration degree of the magnetic memory can be improved, the writing-in power consumption is reduced andthe complexity and manufacturing cost of a technology are easy to reduce.

Description

【Technical field】 [0001] The invention relates to a data writing method of a magnetic memory, which belongs to the technical field of non-volatile storage and logic. 【Background technique】 [0002] Emerging non-volatile memory technology is one of the effective solutions to solve the problem of high static power consumption of integrated circuits in deep submicron. Among them, Magnetic Random Access Memory (MRAM) based on Magnetic Tunnel Junction (Magnetic Tunnel Junction, MTJ) has high-speed reading and writing, low writing current, almost unlimited writing times and good process compatibility. And other advantages and is expected to become the next generation of general-purpose non-volatile memory. For a long time, the writing mechanism has been the main technical bottleneck restricting the development of MRAM. Early MRAM uses a magnetic field to implement data writing. However, in order to generate a suitable magnetic field, a write current of milliampere level is usual...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16G11C11/15
CPCG11C11/155G11C11/161G11C11/1675H10B61/00G11C11/15H10B61/20
Inventor 赵巍胜王昭昊王梦醒蔡文龙
Owner BEIHANG UNIV
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