Fin transistor and formation method thereof

Abstract

The invention provides a fin transistor and a formation method thereof. The formation method comprises the steps of providing a substrate, wherein the substrate is provided with a initial first fin portion and an initial isolation layer covering the side wall of the initial first fin portion; etching the initial first fin portion by taking the initial isolation layer as a mask, and forming a firstgroove in the initial isolation layer; and forming a first fin portion in the first groove, wherein the thermal conductivity coefficient of a material of the first fin portion is greater than the heat conductivity coefficient of a material of the substrate. The formation method effectively improves the heat transfer between the isolation layer and the substrate, improves a self-heating effect ofthe transistor and improves the electrical performance of a semiconductor device.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular, to a fin transistor and a method for forming the same. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher component density and higher integration. As the most basic semiconductor device, transistors are being widely used at present. Therefore, with the improvement of the component density and integration of semiconductor devices, the gate size of planar transistors is getting shorter and shorter, and the traditional planar transistors control the channel current. The ability becomes weak, resulting in a short channel effect, resulting in leakage current, which ultimately affects the electrical performance of the semiconductor device. [0003] In order to overcome the short channel effect of the transistor and suppress the leakage current, the prior ...

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Problems solved by technology

[0004] However, as the density of semiconductor devices increases and the size shrinks, the manufacturing process of fin field effect transistors becomes more difficult, and the performance and reliability of the formed fin field effect transistors deteriorate.

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