Fin field effect transistor and method of forming the same

Abstract

The present invention provides a Fin Field Effect Transistor and a method for forming the Fin Field Effect Transistor. The method for forming the Fin Field Effect Transistor includes: providing a semiconductor substrate with a plurality of discrete fins on the semiconductor substrate; A protective layer is formed on the semiconductor substrate between the fins and the bottom sidewall of the fin, the fin with the protective layer is the first region of the fin, and the fin without the protective layer is the second region of the fin; After the protective layer is formed, an initial isolation layer is formed on the protective layer and the fins; annealing is performed on the initial isolation layer in an oxygen-containing atmosphere to convert the initial isolation layer into an isolation layer, and the During the annealing process, the second region of the fin is oxidized to form an oxide layer on the sidewall of the second region of the fin; part of the thickness of the isolation layer is removed, and the oxide layer exposed by the remaining isolation layer is removed. The electrical performance of the fin field effect transistor formed by the invention is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a fin field effect transistor and a forming method thereof. Background technique [0002] With the rapid development of semiconductor technology, the feature size of semiconductor devices is constantly shrinking, which makes the integration of integrated circuits higher and higher, which also puts forward higher requirements for the performance of devices. [0003] Currently, as the size of Metal-Oxide Semiconductor Field Effect Transistors (MOSFETs) continues to decrease. In order to adapt to the reduction of process nodes, the channel length of MOSFET field effect transistors can only be continuously shortened. The shortening of the channel length has the advantages of increasing the die density of the chip and increasing the switching speed of the MOSFET field effect tube. [0004] However, as the channel length of the device is shortened, the distance be...

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Problems solved by technology

However, when FinFET devices work, serious self-heating effects will occur, which will affect the electrical performance of FinFET devices

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