Fin transistor and method of forming the same

A technology of fin transistors and fins, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the difficulty of fin field effect transistor manufacturing process, the performance deterioration of fin field effect transistors, and the reliability To improve self-heating effect, improve heat transfer, and improve electrical performance

Active Publication Date: 2021-07-13
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, as the density of semiconductor devices increases and the size shrinks, the manufacturing process of fin field effect transistors becomes more difficult, and the performance and reliability of the formed fin field effect transistors deteriorate.

Method used

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  • Fin transistor and method of forming the same
  • Fin transistor and method of forming the same
  • Fin transistor and method of forming the same

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Embodiment Construction

[0032] As mentioned in the background art, as the density of semiconductor devices increases and the size shrinks, the performance and reliability of the formed fin field effect transistors deteriorate.

[0033] As the integration level of semiconductor devices increases, the self-heating effect seriously affects the reliability and service life of transistors. It will be described below in conjunction with the accompanying drawings.

[0034] Figure 1 to Figure 3 It is a schematic cross-sectional structure diagram of the formation process of a semiconductor structure.

[0035] Please refer to figure 1 , providing a substrate 100, the substrate 100 has a semiconductor film 101 on it, and the semiconductor film 101 has a patterned layer 102 on it, and the patterned layer 102 defines the shape and position of the first fin.

[0036] Please refer to figure 2 , using the patterned layer 102 as a mask to etch the semiconductor film 101 (such as figure 1 shown), until the sur...

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Abstract

The present invention provides a fin transistor and its forming method, wherein the forming method includes: providing a substrate with an initial first fin on the substrate, and an initial isolation layer covering the sidewall of the initial first fin ; using the initial isolation layer as a mask, etching the initial first fin to form a first groove in the initial isolation layer; forming a first fin in the first groove, and the The thermal conductivity of the material of the first fin is greater than the thermal conductivity of the material of the substrate. The forming method effectively improves the heat transfer between the isolation layer and the substrate, improves the self-heating effect of the transistor, and improves the electrical performance of the semiconductor device.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a fin transistor and a forming method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher element density and higher integration. Transistors, as the most basic semiconductor devices, are currently being widely used. Therefore, with the improvement of component density and integration of semiconductor devices, the gate size of planar transistors is getting shorter and shorter. The control of channel current by traditional planar transistors The ability becomes weaker, resulting in short channel effect, leakage current, and finally affecting the electrical performance of semiconductor devices. [0003] In order to overcome the short channel effect of the transistor and suppress the leakage current, the prior art proposes a fin field effect transistor (F...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L21/336H01L29/78
CPCH01L29/0638H01L29/66795H01L29/785H01L21/76224H01L29/6681H01L21/823431H01L29/0642
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP
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