Fin transistor and method of forming the same

Abstract

The present invention provides a fin transistor and its forming method, wherein the forming method includes: providing a substrate with an initial first fin on the substrate, and an initial isolation layer covering the sidewall of the initial first fin ; using the initial isolation layer as a mask, etching the initial first fin to form a first groove in the initial isolation layer; forming a first fin in the first groove, and the The thermal conductivity of the material of the first fin is greater than the thermal conductivity of the material of the substrate. The forming method effectively improves the heat transfer between the isolation layer and the substrate, improves the self-heating effect of the transistor, and improves the electrical performance of the semiconductor device.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a fin transistor and a forming method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher element density and higher integration. Transistors, as the most basic semiconductor devices, are currently being widely used. Therefore, with the improvement of component density and integration of semiconductor devices, the gate size of planar transistors is getting shorter and shorter. The control of channel current by traditional planar transistors The ability becomes weaker, resulting in short channel effect, leakage current, and finally affecting the electrical performance of semiconductor devices. [0003] In order to overcome the short channel effect of the transistor and suppress the leakage current, the prior art proposes a fin field effect transistor (F...

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Problems solved by technology

[0004] However, as the density of semiconductor devices increases and the size shrinks, the manufacturing process of fin field effect transistors becomes more difficult, and the performance and reliability of the formed fin field effect transistors deteriorate.

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