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Silicon carbide MOSFET power device and preparation method thereof

A technology of power devices and silicon carbide, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of large on-resistance of devices, large electric field strength in gate oxide, etc., and achieves remarkable effects, device structure and The effect of simple preparation process and wide application prospect

Inactive Publication Date: 2020-01-07
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the above problems, the present invention provides a silicon carbide MOSFET power device and a preparation method thereof, which are used to solve the problem of large on-resistance of the device and large electric field intensity in the gate oxide due to the existence of JFET area resistance in the prior art. The problem

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  • Silicon carbide MOSFET power device and preparation method thereof
  • Silicon carbide MOSFET power device and preparation method thereof
  • Silicon carbide MOSFET power device and preparation method thereof

Examples

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Embodiment 1

[0077] See Figure 1 to Figure 14 . It should be noted that the illustrations provided in this embodiment only illustrate the basic idea of ​​the present invention in a schematic manner, although the illustrations only show the components related to the present invention instead of the actual implementation of the number, shape and For size drawing, the shape, quantity, and proportion of each component can be changed at will during actual implementation, and the component layout may be more complicated.

[0078] Such as Figure 1 to Figure 14 As shown, the present invention provides a method for manufacturing a silicon carbide MOSFET power device, including the following steps:

[0079] S1: providing a heavily doped substrate of the first doping type, and the substrate has a first surface and a second surface, and forming a lightly doped epitaxial layer of the first doping type on the first surface;

[0080] S2: Define a JFET region in the epitaxial layer, and perform doping of the ...

Embodiment 2

[0144] See Figure 1 to Figure 14 . It should be noted that the illustrations provided in this embodiment only illustrate the basic idea of ​​the present invention in a schematic manner, although the illustrations only show the components related to the present invention instead of the actual implementation of the number, shape and For size drawing, the shape, quantity, and proportion of each component can be changed at will during actual implementation, and its component layout may also be more complicated.

[0145] Such as Figure 1 to Figure 14 As shown, the present invention provides a method for manufacturing a silicon carbide MOSFET power device, including the following steps:

[0146] S1: providing a heavily doped substrate of the first doping type, and the substrate has a first surface and a second surface, and forming a lightly doped epitaxial layer of the first doping type on the first surface;

[0147] S2: Define a JFET region in the epitaxial layer, and perform doping of...

Embodiment 3

[0211] See Figure 1 to Figure 14 . It should be noted that the illustrations provided in this embodiment only illustrate the basic idea of ​​the present invention in a schematic manner, although the illustrations only show the components related to the present invention instead of the actual implementation of the number, shape and For size drawing, the shape, quantity, and proportion of each component can be changed at will during actual implementation, and the component layout may be more complicated.

[0212] Such as Figure 1 to Figure 14 As shown, the present invention provides a method for manufacturing a silicon carbide MOSFET power device, including the following steps:

[0213] S1: providing a heavily doped substrate of the first doping type, and the substrate has a first surface and a second surface, and forming a lightly doped epitaxial layer of the first doping type on the first surface;

[0214] S2: Define a JFET region in the epitaxial layer, and perform doping of the ...

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Abstract

The invention provides a silicon carbide MOSFET power device and a preparation method thereof. The preparation method comprises the steps: providing a first doping type of heavily-doped substrate, andforming a first doping type of lightly-doped epitaxial layer on a first surface; forming a well region in the epitaxial layer; forming a source region surrounding a JFET region in the well region, and forming a contact region in the well region surrounding the source region; performing doping of the first doping type in the defined JFET region to form a JFET buried type doping region; forming a gate structure on the surface of the epitaxial layer, and depositing a surface passivation layer on the surface of the gate structure; and forming a gate metal electrode electrically connected with thegate structure, forming a source metal electrode on the surface of the source region, and forming a drain metal electrode on the second surface of the substrate. The buried type doped region is formed after N-type ion implantation is carried out on the JFET region of a conventional planar gate MOSFET power device, so that the resistance of the JFET region is reduced, the intensity of the electricfield in gate oxide can be prevented from being improved, and the breakdown risk of the gate oxide is reduced.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor device structure and preparation, and particularly relates to a silicon carbide MOSFET power device and a preparation method thereof. Background technique [0002] With the continuous development of power electronics technology towards high energy efficiency, high power density, and miniaturization, higher requirements are put forward for the power consumption and switching speed of power switching devices. As a third-generation semiconductor material, SiC (silicon carbide) has a series of excellent characteristics such as large band gap, high critical breakdown electric field strength, and high thermal conductivity. It is very suitable for making high-temperature, high-frequency and high-power power electronic devices. SiC power switching devices can simultaneously achieve excellent performance such as high breakdown voltage, low on-resistance, high switching speed and easy heat dissipation. The...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L21/04
CPCH01L21/0445H01L29/66068H01L29/7802
Inventor 王谦柏松杨勇
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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