Radio frequency switch circuit

Abstract

The invention provides a radio frequency switch circuit comprising a transistor chain composed of M connected transistors, wherein the radio frequency switch circuit further comprises a resistor chain composed of M first resistors connected in series, M connecting points are arranged on the resistor chain, and substrates of the M transistors are sequentially connected to the M connecting points through different second resistors. The invention further provides another radio frequency switch circuit comprising a first resistor chain composed of M first resistors connected in series and a second resistor chain composed of M-N first resistors connected in series, wherein N connecting points are arranged on the first resistor chain, M-N connecting points are arranged on the second resistor chain, the substrates of previous N transistors in the transistor chain are sequentially connected to the N connecting points through a different second resistor, and the substrates of latter M-N transistors are sequentially connected to the M-N connecting points through a different second resistor. The two radio frequency switch circuits can reduce the maximum voltage difference between the source electrodes and the drain electrodes of the transistors, so that the voltage distribution on the transistors is more uniform.

Description

Technical field [0001] The invention relates to the technical field of semiconductor circuits, in particular to a radio frequency switch circuit. Background technique [0002] The radio frequency switch is one of the control devices used to control the radio frequency signal transmission path and signal size. It has a wide range of applications in many fields such as wireless communication, electronic countermeasures, radar systems, and electronic measuring instruments. [0003] The existing radio frequency switch circuit is composed of M transistors, such as figure 1 As shown, from left to right are the first transistor 1, the second transistor 2, the third transistor 3... the M-1 transistor M-1 and the M transistor M, respectively. The drain of the first transistor 1 is used as the input terminal of the radio frequency switch circuit, and its source is connected to the drain of the second transistor 2; the source of the second transistor 2 is connected to the drain of the third t...

AI Technical Summary

Problems solved by technology

[0004] With the development of modern radar and radio communication technologies, various electronic devices have continuously put forward higher requirements for the RF switch circuits used in their internal applications or system tests. One of the important points is that the existing RF switch circuits make the voltage distribution uneven. balance, which seriously affects the power handling capability and even causes the high voltage on the transistor to break down the transistor. Therefore, it is necessary to improve the structure of the existing RF switch circuit, reduce the maximum voltage difference distributed between the source and drain of the transistor, and reduce the size of the transistor Risk of breakdown by high voltage

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