The invention relates to a
chip solid capacitor and a
coating process thereof, the
chip solid tantalum capacitor is composed of a
tantalum block, a
dielectric oxide layer, a
cathode layer, a
transition layer, a silver layer and a plastic
package layer, the
cathode layer is a
manganese dioxide layer, and the
manganese dioxide layer is formed by
thermal decomposition on the
tantalum block on which the
dielectric oxide layer grows through the
coating process; the specific operation of the
coating process is specifically limited, and the tantalum block is sequentially impregnated with thin-thick-thick-thin coating liquid, so that the prepared
cathode layer is high in density, high in interlayer
binding force and free of bubbling and
delamination defects, the qualification rate and the
moisture resistance of the product are greatly improved, meanwhile, parameters of all stages are controllable and adjustable, and the production cost is reduced. And the production requirements of high-specific-volume tantalum capacitors with different
specific volume grades can be met, and the method has a good industrial application prospect.