3results about How to "Improve ladder coverage" patented technology

This invention provides a capacitor structure and a method for manufacturing the same. The capacitor structure includes a bottom electrode, an insulating layer, a top electrode, and an interface layer. The insulating layer is disposed on the bottom electrode. The top electrode is disposed on the insulating layer. The interface layer is disposed between the insulating layer and the top electrode. The interface layer has at least one element that is the same as the element contained in the insulating layer, and at least one element that is the same as the element contained in the top electrode.

A film is formed on a substrate by performing a predetermined number of times a cycle including: (a) supplying a first raw material and an additive to the substrate, generating a second raw material that is chemically more stable than the first raw material, and exposing and adsorbing the first raw material and the second raw material to the surface of the substrate to form a first layer; and (b) supplying a reaction body to the substrate to change the first layer into a second layer.

The present invention relates to a composition for modifying a thin film, a method for forming a thin film using the same, a semiconductor substrate manufactured by the method, and a semiconductor device, in which the composition for modifying a thin film uses both a masking material and a diffusion improving material to improve the reaction speed and appropriately reduce the growth rate of a thin film, thereby improving the yield of the thin film. According to the present invention, even if a thin film is formed on a substrate having a complicated structure under a high temperature condition, step coverage and thickness uniformity of the thin film can be greatly improved, and impurities are reduced, thereby having an effect of improving film quality.