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556results about How to "Prevent bridging" patented technology

Privacy mode system and method for home network telephone

A system and method are provided for controlling communications privacy in a Home Network telephone system. The method comprises: using a gateway to send and receive calls on at least one external telephone line; supplying privacy and public mode bridging options; and, selectively excluding bridges between external telephone lines and a plurality of Home Network endpoints. In response to the privacy mode being selected, the gateway bridges a call between a first external telephone line and a first endpoint, and prevents bridges between the first external telephone line and other endpoints in the system. Alternately, when the public mode is selected, the gateway bridges a call between the first external telephone line and the first endpoint; and permits bridges between the first external telephone line and other endpoints in the system. That is, while the call is bridged to the first endpoint, a bridge is added between the first telephone line and the second endpoint. The privacy and public mode bridging options are selected with respect to nodes. A node can be an external telephone line or an endpoint. That is, a privacy or public mode of operation can be selected for a first external telephone line, whether calls are received or originated through the Home Network telephone system. Likewise, a privacy or public mode of operation can be selected for a particular endpoint, regardless of whether the endpoint receives or originates the call.
Owner:SHARP KK

Package and manufacture method for thermal enhanced quad flat no-lead flip chip

The invention discloses a packaging and manufacturing method for a thermal enhanced quad flat no-lead flip chip. A thermal enhanced quad flat no-lead flip chip package piece structure comprises a lead framework, a first metal material layer, a second metal material layer, IC chips with convex points, an insulating filler material, a sticking material, radiating fins, heat conducting spacers and a plastic package material, wherein the lead framework comprises a chip carrier and a plurality of pins arranged in multiple circles around the chip carrier; the first metal material layer and the second metal material layer are respectively configured on the upper surface and the lower surface of the lead framework; the IC chips with the convex points are invertedly welded and configured at the position of the first metal material on the upper surface of the lead framework; the insulating filler material is configured below the stepped structure of the lead framework; the heat conducting spacers are configured between the IC chips and the chip carrier through the sticking material; and the radiating fins are configured on the edgeless surfaces of the IC chips through the sticking material and wrapped by the plastic package material to form a package piece. The QFN (Quad Flat No-lead) package piece structure provided by the invention has the advantages of high reliability, low cost and high I/O (Input/Output) density.
Owner:BEIJING UNIV OF TECH

Quad flat non-lead (QFN) package with high density and manufacturing method

The invention discloses a quad flat non-lead (QFN) package with high density and a manufacturing method. The package comprises a lead frame 201, metal material layers 25, an IC chip 27, insulating filling materials 23, bonding materials 26, metal conductors 28 and plastic package materials 29, wherein the lead frame comprises a chip carrier 202 and a plurality of leads 203 arranged in multiple circles around the chip carrier; the metal material layers are arranged on the upper and lower surfaces of the lead frame; the IC chip is arranged on a metal material layer on the upper surface of the lead frame; the insulating filling materials are arranged below stepped structures 22b of the lead frame; the bonding materials are arranged between the IC chip and the metal material layer on the upper surface of the lead frame; the IC chip is connected to the inner leads of the multiple circles of leads and the upper surface of the chip carrier respectively by the metal conductors; the plastic package materials wrap and seal the IC chip, the bonding materials, the metal conductors, partial regions of the lead frame and partial metal material layers; and the chip carrier and the outer leads exposed out of the bottom surface of a package structure, are provided with raised parts. The package and the manufacturing method have the following beneficial effects: the bottleneck of low I/O quantity is broken through and the package reliability is improved.
Owner:BEIJING UNIV OF TECH

Cylindrical material-issuing tank of a plurality of air distributors and material-issuing tubes and multi-path material-issuing method thereof

InactiveCN101544310AMeet the requirements of variable load operationSimplify multi-channel coal supply systemBulk conveyorsCombined combustion mitigationDistributorMulti path
The invention relates to a cylindrical material-issuing tank of a plurality of air distributors and material-issuing tubes and a multi-path material-issuing method thereof and relates to the pressurization gasification of large-scale dry coal powder and a coal powder delivery system of an IGCC generating technology. The invention adopts the cylindrical material-issuing tank with a plurality of independent air distributors arranged at the bottom of the material-issuing tank, each air distributor corresponds to a path of fluidization air tube and a material-issuing tube to realize the multi-path delivery of coal powder; fluidization air from an air storage tank enters the material-issuing tank from the bottom by each fluidization air tube to fluidize the coal powder on each air distributor, pressurized air is used for maintaining the pressure stability of the material-issuing tank, and supplementary air is used for adjusting a solid-air ration in a delivery tube to ensure the delivery stability. The invention can utilize the material-issuing tank to realize multi-path delivery, effectively simplifies the multi-path delivery system, prevents a conical material-issuing tank from causing a coal powder bridge phenomenon due to continuously reducing flow cross section, effectively lowers the height of the material-issuing tank and improves the space utilization rate of the material-issuing tank.
Owner:SOUTHEAST UNIV

Reciprocating inverse-pushing type garbage incinerator

The invention discloses a reciprocating inverse-pushing type garbage incinerator which comprises a hearth wall body, a hopper device arranged on an upper port of the hearth wall body, a residue falling groove arranged at a lower port of the hearth wall body and a residue discharging machine positioned below the residue falling groove, wherein a reciprocating inverse-pushing type fire grate is arranged in the hearth wall body, a primary air chamber and an ash discharging device are sequentially arranged below the fire grate, a closed rotating shaft fire grate drive device is arranged below thefeeding device; the fire grate comprises a fire grate frame, a plurality of fixed beams used for supporting and fixing fire grate sheets, and a plurality of movable beams used for driving movable fire grate sheets; the fixed beams and the movable beams are arranged on the fire grate frame at intervals laterally, the corresponding fixed fire grate sheets and the movable fire grate sheets are arranged and overlapped at intervals laterally, the fire grate is inclined downwards along the advancing direction of rubbish, the fire grate is divided into 2-6 lines of fire grate units along the direction vertical to the advancing direction of rubbish, and the movable beam of each line of fire grate units is driven by the corresponding primary closed rotating shaft drive device through a movable beam frame. The reciprocating inverse-pushing type garbage incinerator ensures that the rubbish can be effectively conveyed, stirred, loosened, crushed and fully combusted in a process of incinerating the rubbish, and has the advantages of good sealing property, and no air and ash leakage and dropping and permeating phenomena.
Owner:SHENZHEN DINGZHU ENVIRONMENTAL PROTECTION TECH

Forming method of fin field effect transistor

The invention discloses a forming method of a fin field effect transistor. The forming method comprises the steps of providing a semiconductor substrate which is provided with at least two adjacent convex fin parts, a grid electrode structure crossing top and side wall surfaces of the fin parts and source/drain areas located in the fin parts on the two sides of the grid electrode structure, performing selective epitaxy on the source/drain areas to form semiconductor layers which cover partial side wall and top surfaces of the fin parts, forming a sacrificial layer covering the surfaces of the semiconductor substrate, the fin parts and the semiconductor layers, etching back the sacrificial layer, exposing partial surfaces of the semiconductor layers, forming mask layers on the exposed surfaces of the semiconductor layers, and etching to remove partial edges of the sacrificial layer and the semiconductor layers by taking the mask layers as masks, wherein the semiconductor layers located above the tops of the fin parts are provided with bulges, and the semiconductor layers located on the two sides of the fin parts are provided with edges. The forming method can effectively avoid bridging of embedded sources/drains of the connected fin parts, and can improve the stability of a device.
Owner:SEMICON MFG INT (SHANGHAI) CORP
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