37results about How to "Fabrication cost is increased" patented technology

A pre-solder structure on a semiconductor package substrate and a method for fabricating the same are proposed. A plurality of conductive pads are formed on the substrate, and a protective layer having a plurality of openings for exposing the conductive pads is formed over the substrate. A conductive seed layer is deposited over the protective layer and openings. A patterned resist layer is formed on the seed layer and has openings corresponding in position to the conductive pads. A plurality of conductive pillars and a solder material are deposited in sequence in each of the openings. The resist layer and the seed layer not covered by the conductive pillars and the solder material are removed. The solder material is subject to a reflow-soldering process to form pre-solder bumps covering the conductive pillars.

A semiconductor device comprising a semiconductor chip (101) assembled on a first copper cuboid (110); the cuboid has sides of a height (111). The device further has a plurality of second copper cuboids (120) suitable for wire bond attachment; the second cuboids have sides of a height (121) substantially equal to the height of the first cuboid. The back surfaces of all cuboids are aligned in a plane (130). Encapsulation compound (140) is adhering to and embedding the chip, the wire bonds, and the sides of all cuboids so that the compound forms a first surface (140b) aligned with the plane of the back cuboid surfaces and a second surface (140a) above the embedded wires. For devices intended for stacking, the devices further comprise a plurality of vias (160) through the encapsulation compound from the first to the second compound surfaces; the vias are filled with copper, and the via locations are matching between the devices-to-be-stacked.

A display apparatus is provided which can detect light of a predetermined wavelength with a high degree of accuracy from within light incident from a screen by a simple configuration. The display apparatus includes a CF substrate (9) having a plurality of color filters (31) of different colors for passing light for displaying an image on the screen (55a) and an IR filter (33) provided in a region different from an arrangement region of the color filters of the different colors for passing light incident from the screen (55a), and a main sensor (19) provided on the rear side of the IR filter (33) for detecting light incident from the screen (55a) and passing through the IR filter (33). The IR filter (33) has a laminate of filter materials same as filter materials from which at least two or more ones of the color filters of the different colors are formed respectively.

To provide more compact dimensions of a via structure formed by signal via pairs and ground vias in multilayer substrate. A multilayer substrate is provided such that the multilayer substrate comprising a high-isolated via cell wherein the high-isolated via cell comprises: two signal via pairs; a shield structure around two signal via pairs consisting of ground vias and ground strips connected to ground vias wherein the shield structure is formed symmetrically in respect to two via pairs to reduce the transformation between mixed modes and also leakage from two signal via pairs; a clearance hole separating signal via pairs from other conductive parts of the multilayer substrate and having predetermined dimensions to provide broadband operation of the high-isolated via cell; and the separating strip disposed symmetrically between said signal via pairs to provide crosstalk reduction between two signal via pairs and common mode decrease.

A method for fabricating an electrical connection structure of a circuit board is proposed. A patterned resist layer is formed on the circuit board having a plurality of conductive pads, and a plurality of openings is formed in the resist layer to expose the conductive pads. A first conductive material and a second conductive material are successively deposited in the openings of the resist layer and on each of the conductive pads. Then, the resist layer is removed. Subsequently, a protective layer is applied on the circuit board and covers the first and second conductive materials formed on each of the conductive pads. Finally, the protective layer is thinned to expose the second conductive material corresponding in position to each of the conductive pads. Thus, the circuit board can be electrically connected to an external device via the second conductive material.

An increase in fabricating cost of a display module including a touch sensor is suppressed. A display device which includes a first substrate, a second substrate, and liquid crystal interposed between the first substrate and the second substrate includes a display portion. The display portion includes a sensor unit and a pixel. The sensor unit includes a first transistor, a first conductive film electrically connected to a gate of the first transistor, and a second conductive film. At least part of the first conductive film overlaps with at least part of the second conductive film. The pixel includes a second transistor, and a pixel electrode electrically connected to the second transistor. At least part of the pixel electrode overlaps with at least part of the first conductive film.

A semiconductor package structure and a method for fabricating the same are proposed. A carrier having at least one cavity is provided. At least one semiconductor chip having electrode pads is mounted in the cavity. A dielectric layer is applied on the carrier and the chip, and has vias for exposing the electrode pads of the chip. A circuit layer and conductive structures are formed on the dielectric layer and in the vias, wherein the conductive structures are electrically connected to the electrode pads of the chip. A conductive adhesive layer having conductive adhesive posts and a circuit board having conductive pads thereon are provided. The circuit board is mounted on the carrier via the conductive adhesive layer. The conductive pads of the circuit board are electrically connected to the circuit layer by the conductive adhesive posts and are further electrically connected to the electrode pads of the chip.

Disclosed is a radiological imaging device which comprises: a radiation conversion panel which is obtained by laminating a scintillator and a photoelectric conversion layer and converts a radiation ray into a radiation image; a base which supports the radiation conversion panel mounted thereon; and a case which houses the radiation conversion panel and the base. The base supports the radiation conversion panel, while deforming the radiation conversion panel into a convex shape with respect to the mounting direction thereof.

A gas compressor has a cylinder chamber provided with discharge holes. Openings are in communication with the discharge holes, respectively. Discharge passages having the same length are connected with the openings, respectively. The ends of the discharge passages are connected with a common passage. During operation of the cylinder chamber, discharge valves cause the expelled gas to produce pulsations on the upstream side of the two openings. The pulsations are shifted in phase by a half wavelength. Noise due to the pulsations is reduced, because the pulsations of the expelled gas cancel out each other when the gas flows through the common passage.

A method of manufacturing a resin-made joint boot (10) provided with a boot body (12) including a large-diameter tubular part (14), a small-diameter tubular part (16) and a bellows section (18), and a bushing (30) fitted inside the large-diameter tubular part, wherein the boot body and the bushing are separately molded, the bushing is positioned inside the large-diameter tubular part of the boot body, and then, both are integrally fastened by laser welding. The large-diameter tubular part (14) is provided on its internal periphery with an outwardly divergent tilting surface (24) while the bushing (30) is provided with an annular projecting portion (42) to be abuttingly disposed on the tilting surface, and laser (R) is irradiated, penetrating through the annular projecting portion (42) onto the tilting surface (24).

A semiconductor device (1a) which is constituted by organic semiconductors with excellent transistor characteristics and includes: a p-type organic transistor (P1) having a gate electrode (12), a source electrode (14), a drain electrode (15), and a p-type organic semiconductor layer (16); an n-type organic transistor (N1) electrically connected with the p-type organic transistor (P1) and having a gate electrode (22), a source electrode (24), a drain electrode (25), and an n-type organic semiconductor layer (26); first layers for enhancing electric charge transfer, one of the first layers being provided between the source electrode (14) and the organic semiconductor layer (16), the other of the first layers being provided between the drain electrode (25) and the organic semiconductor (26); and second layers for enhancing electric charge transfer and made from a different material from that of the first layers, one of the second layers being provided between the drain electrode (15) and the organic semiconductor layer (16), the other of the second layers being provided between the source electrode (24) and the organic semiconductor layer (26), all of the source electrodes and the drain electrodes being made from a same electrode material.

A bridge module for updating basic input/output system (BIOS) includes a universal series bus (USB) port and a series peripheral interface bus (SPI) port which are used to connect to a communication device and an electrical device respectively. The communication device stores a BIOS updating data and includes USB port. The electrical device includes a motherboard, a SPI port and a BIOS chip. The SPI port is electrically connected to the motherboard. The BIOS chip is electrically connected to the SPI port and stores a BIOS old data. The method includes the steps of making the bridge module connect to the communication device and the electrical device; and triggering updating process to make the communication device transmit the BIOS updating data to the electrical device through the bridge module to update the electrical device.

A LCD device prevents corrosion of the transparent conductive layers and contact resistance increase without arising the step coverage degradation due to the thickness increase of the interconnection layer, the step coverage degradation due to the formation of undercut portions, and productivity reduction and fabrication cost increase. A first interconnection line comprising a patterned Al or Al alloy layer is disposed on or over an insulating plate. A first insulating layer is formed to cover the first interconnection line to have a contact hole exposing a part of the first interconnection line. A first conductive material made of a plated metal is in contact with the exposed part of the first interconnection line in the contact hole. A first transparent conductive layer is in contact with the first conductive material. The first transparent conductive layer is electrically connected to the first interconnection line by way of the first conductive material.

An epitaxial wafer, a light-emitting element, a method of fabricating the epitaxial wafer and a method of fabricating the light-emitting element, which have a high output and a low forward voltage, and can be fabricated without increasing fabricating cost, are provided. The epitaxial wafer is formed with a light-emitting portion, a reflective portion provided between a semiconductor substrate and the light-emitting portion and a current dispersing layer having first and second current dispersing layers, wherein the reflective portion has plural pairs of layers having first and second semiconductor layers wherein the first semiconductor layer has a thickness of T_A defined by Equation (1),

the second semiconductor layer has a thickness of T_B defined by Equation (2),

and the second current dispersing layer has a high carrier density or a high impurity density and is provided with the convexoconcave portion on the surface.

A banknote processing apparatus is disclosed. The banknote processing apparatus includes a sensor unit configured to acquire image information of a banknote and project light alternately from red, green, and blue (RGB) light sources onto the banknote, and a control unit configured to (i) acquire per-color image information of the banknote for each RGB color from the image information and (ii) determine at least one of a denomination, an identification mark, an authenticity, and a fitness of the banknote based on the per-color image information.

A vehicle lamp has a circuit board on which a light emitting element is mounted, a housing for holding the circuit board, a first light guiding lens for guiding part of light emitted from the light emitting element in a predetermined direction, and a second light guiding lens for guiding at least the other part of the light emitted from the light emitting element in the other predetermined direction. The housing, the first light guiding lens and the second light guiding lens are formed integrally.

A sensor circuit with high sensitivity to ultraviolet light. Ultraviolet light is detected using a transistor containing an oxide semiconductor. When the transistor is irradiated with ultraviolet light or light including ultraviolet light, the drain current of the transistor depends on the intensity of the ultraviolet light. Data on the intensity of ultraviolet light is obtained by measuring the drain current of the transistor. Since the band gap of an oxide semiconductor is wider than that of silicon, the sensitivity to light with a wavelength in the ultraviolet region can be increased. Furthermore, an increase in dark current caused by temperature rise in the sensor circuit can be suppressed, resulting in a wider allowable ambient temperature range of the sensor circuit.

A vehicle lamp has a housing for holding a circuit board, and a gasket mounted on the housing to waterproof the circuit board. A fastening portion is provided on the gasket to fasten the circuit board to the housing. A lid member is provided which is connected to the housing to fasten the gasket.

A manufacturing method for a variator part of a toroidal-type continuously variable transmission, has the steps of preparing a lower die including a first hole portion and a ring-like projected portion, wherein center lines of the first hole portion and the ring-like projected portion coincide with each other, and an upper die including a second hole portion, wherein a center line of the second hole portion is eccentric from the center line of the first hole portion, mounting a solid material on the lower die so that a center line of the solid material coincides with the center line of the ring-like projected portion, and simultaneously forming the support shaft portion, the outer ring and the pivot shaft portion by pressing the upper die and the lower die so as to approach each other.

The inventions relate to methods for trimming integrated circuits. Various embodiments include providing a method to trim an integrated circuit wherein trim data is stored in an on-board memory and then sent off of the circuit to be operated on by an external device. Corresponding trim data is then sent back to the integrated circuit in order to potentially modify the function of one or more analog devices along the circuit. Other embodiments include methods for trimming integrated circuits wherein trim data is stored in an on-board memory and retrieved using an on-board sequencer. The retrieved data is used to modify a function of one or more analog devices on the integrated circuit.

Gases for film formation are introduced from a plurality of holes provided at a gas nozzle into a processing chamber of a batch-type CVD film-forming apparatus to cause a turbulence of the gases within the processing chamber. In the state where the chamber is kept at a pressure within an atmospheric and quasi-atmospheric pressure region, a silicon-germanium film is epitaxially grown on a semiconductor wafer placed within the processing chamber. Subsequently, a strained silicon film is epitaxially grown on the silicon-germanium film. Thereafter, a semiconductor element is formed in the semiconductor wafer on which the silicon-germanium film and the strained silicon film have been formed, respectively.