Sputtering system and method for forming a metal layer on a semiconductor device

Abstract

A method for sputtering an aluminum layer on a surface of a semiconductor device is presented. The method includes three sputtering steps for depositing the aluminum layer, where each sputtering stepincludes at least one sputtering parameter that is different from a corresponding sputtering parameter of another sputtering step. The surface of the semiconductor device includes a dielectric layer having a plurality of openings formed through the dielectric layer.

Description

technical field [0001] The subject matter disclosed herein relates to semiconductor devices, and more particularly, to sputtering processes for forming metal layers on semiconductor devices. Background technique [0002] Power conversion devices are widely used throughout modern power systems to convert electricity from one form to another for consumption by a load. Many power electronic systems utilize various semiconductor devices and components such as thyristors, diodes, and various types of transistors (e.g., metal-oxide-semiconductor field-effect transistors (MOSFETs), insulated-gate bipolar transistors (IGBTs) and other suitable transistors). Some semiconductor devices may include a plurality of cells (eg, transistor cells) formed on a semiconductor substrate. During fabrication of such semiconductor devices, one or more metal layers (eg, metallization) may be deposited on the surface of the semiconductor device to electrically connect features of the semiconductor ...

AI Technical Summary

Problems solved by technology

However, reducing cell size may cause challenges in the fabrication of semiconductor devices and their associated cells

In particular, as the cell size decreases, the size of trenches and openings in the stepped surface of semiconductor devices generally decreases, which may increase the difficulty in obtaining sufficient step coverage, thereby reducing the reliability of semiconductor devices.

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