Organometallic compounds and thin film using same

Abstract

An organometallic compound and a thin film using same of the present invention have high volatility, excellent chemical and thermal stability, and a remarkably improved thin film deposition rate evenat low temperatures. In addition, it is possible to realize a thin film having improved property degradation due to a by-product, excellent step coverage, and high permittivity so as to have an electrically equivalent oxide thickness (EOT) and a thickness such that tunneling, in physics, does not occur.

Description

Technical field [0001] The present invention relates to an organometallic compound and a thin film using the same. More specifically, to an organometallic compound that satisfies high volatility, excellent chemical and thermal stability, and has a significantly improved film deposition rate even at low temperatures Compounds and films using them. Background technique [0002] Recently, in order to manufacture nanoscale integrated devices, applications of various thin films such as metals, semiconductors, and oxides have been studied. In the process of forming these various thin films, as the devices continue to be extremely miniaturized, new forms of devices continue to come out, so that there is a need for a thin film deposition process that has a nano-scale and composite structure and can adjust the thickness at the atomic level The importance of conformity is increasing. At present, the gate oxide used in the gate structure of the metal-oxide semiconductor field effect trans...

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Problems solved by technology

However, these metal pentachlorides have the following problems: 1) As a solid compound with low vapor pressure at room temperature, it is difficult to apply to semiconductor mass production process due to low film deposition rate; 2) Chloride contamination occurs

However, these metal alkoxide compounds have the following problems: 1) thermal stability is low, so when the substrate temperature at the time of deposition is 300°C or higher, the step coverage decreases due to the decomposition of the precursor; 2) carbon contamination increases

[0005] Moreover, metal imino / amide compounds have the following problems: 1) the possible ALD process temperature is lower than 325°C; 2) the crystallinity of the film is low; 3) the deposited film is more polluted by carbon etc.

However, it is difficult to bury Cu in holes and trenches by current plating methods in the formation of Cu wiring films for cutting-edge devices after the 32nm node

This is because in the current situation, the barrier metal film required as the base layer of the Cu wiring film is formed by the PVD method, so it is difficult to miniaturize it, and a satisfactory base layer cannot be obtained.

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