51 results about "Tunnelling effect" patented technology

The invention relates to the technical field of electromagnetic relay control, in particular to an electromagnetic relay control system, which comprises a relay execution unit, a contact state monitoring unit and an intelligent viscosity elimination control unit, and is characterized in that the contact state monitoring unit acquires quantum tunneling effect impedance spectroscopy and acoustic emission energy entropy change signals in real time; the intelligent viscosity-eliminating control unit analyzes signals through a fusion welding risk multi-dimensional evaluator, triggers a three-stage control sequence, firstly starts a magnetostriction high-frequency oscillator to inject an inverted eddy current array, activates a hysteresis loop restorer to apply a gradient demagnetization potential field if the fusion welding risk multi-dimensional evaluator is not recovered, and finally, recovers the fusion welding risk multi-dimensional evaluator; when an acoustic emission signal is abnormal, a chaotic encryption message is generated through the fault feature topology generator and is linked with the magnetic solitary wave breaking device, ultrasonic frequency mechanical energy can be captured and converted into regenerative current, an adhesion evolution path is reconstructed after diagnosis, the problems of contact adhesion risk identification lagging and lack of multi-physics field cooperative control in the prior art are solved, and the reliability of the contact adhesion risk identification is improved. And the adhesion early warning success rate and the removal efficiency are improved.

The invention relates to the technical field of heterogeneous unmanned aerial vehicle cluster task planning and intelligent scheduling, and discloses a heterogeneous unmanned aerial vehicle cluster intelligent task planning method, which is characterized by comprising task and unmanned aerial vehicle information initialization, task preliminary allocation based on a quantum annealing algorithm, real-time adjustment based on reinforcement learning, and a communication and cooperation mechanism. Executing and monitoring a task; the super-strong parallel computing capability and the quantum tunneling effect of a quantum annealing algorithm are utilized to quickly process a large-scale task allocation problem and find an approximate range of a globally optimal solution, and then an unmanned aerial vehicle cluster continuously learns and adjusts a task execution strategy according to real-time environment feedback in a task execution process by means of reinforcement learning, so that the task execution efficiency is improved. Therefore, the method adapts to dynamically changing scenes.

The present invention provides a discontinuous metal film with a tunneling effect, a tunneling electrode chip, and a method for preparing the same. A large-area uniform discontinuous metal film is in situ grown on a glass substrate by magnetron sputtering deposition, constructing a charge tunneling structure with a random nanoarray. The discontinuous metal film comprises a substrate and a nanogap film disposed on the substrate. The nanogap film comprises a number of randomly distributed nanoislands and a number of nanogaps. A nanogap is formed between any two adjacent nanoislands, and the nanogap is <10 nm. The thickness of the nanogap film is <100 nm. The tunneling electrode chip achieves atomic-level thickness control through high-precision thin film deposition, significantly improving the uniformity of multiple batches of devices and increasing the yield by more than 50% compared to traditional methods. This breaks through the expensive micro-nano processing limitations faced by traditional tunneling devices, has the ability to sensitively respond to different small molecule media, and can present molecular information as transient conductivity information.

The invention relates to the field of all-weather safety monitoring in the chemical industry, and discloses an all-weather chemical plant monitoring method, which comprises the following steps: dynamically acquiring quantum state measurement data of environmental parameters through a quantum dot array, capturing parameters such as temperature, pressure and gas concentration in real time by the quantum dot array through a tunneling effect, the sensing principle is based on the displacement effect of the quantum limited energy level; mapping the measurement data to a five-dimensional AdS spatio-temporal manifold and calculating an Einstein tensor; based on the Einstein tensor, solving topology invariant and curvature evolution of the space-time manifold; generating an algebraic decision instruction according to the topology invariant; and the encrypted control signal is fed back to the execution mechanism through the topology photon link. Through dynamic coupling of the quantum dot array and the five-dimensional AdS space-time manifold, cross-scale correlation monitoring of quantum state fluctuation and macroscopic deformation is achieved, the recognition blind area of a traditional method for micro-nano defects is broken through, and the early detection rate of pipeline microcracks is increased by two orders of magnitude.

The embodiment of the invention relates to a 10kV cable partial discharge signal detection and positioning method based on temperature influence. The method comprises the following steps: arranging an optical fiber temperature sensor and an ultrahigh frequency partial discharge sensor for a 10kV cable; performing temperature compensation on the discharge signal based on a Schottky-tunneling effect model, synchronously acquiring point wire core temperature, outer sheath temperature and the discharge signal, and calculating the wire core temperature of the 10kV cable by using a thermal circuit model; and calculating the position of a discharge point according to the propagation velocity of the discharge signal after the temperature compensation is corrected according to the core temperature of the 10kV cable. According to the invention, temperature compensation is carried out on the discharge signal based on the Schottky-tunneling effect model, the distortion of the discharge signal is eliminated, and the detection precision in a temperature-sensitive environment is improved; the signal propagation speed is corrected through the thermal circuit model, the problem that the positioning error is large under the high-temperature working condition in a traditional method is solved, and meter-scale precision positioning is achieved.

The invention discloses a fiber composite material based on hydrogen bond self-repairing and conductive self-diagnosis and a preparation method of the fiber composite material, and belongs to the technical field of intelligent diagnosis and self-repairing fiber reinforced resin-based composite materials and preparation of the intelligent diagnosis and self-repairing fiber reinforced resin-based composite materials. According to the method, the problem that the self-healing effect cannot be timely obtained on the internal damage of the material due to the fact that the damage area cannot be accurately positioned and identified before the damage of the existing fiber composite material is repaired is solved. According to the invention, a quantum tunnel effect and a three-dimensional conductive skeleton are constructed by using a micro-nano multi-stage conductive filler composed of a nano carbon nanotube, micron flake graphite powder and unidirectional short carbon fiber, a damage occurrence position is realized based on an electro-mechanical corresponding relation, a self-sensing function is given, and accurate positioning of the damage is realized (the error is less than 1mm). A multiple reversible hydrogen bond system formed by acrylamide, polyethyleneimine and epoxy resin is further utilized, the self-repairing effect of the composite fiber material is achieved, and the test result shows that the self-repairing efficiency of at least 90% or above is achieved at the normal temperature.

The invention discloses a mobile mechanical arm dynamic collision detection method and device based on a time-varying volume model. The mobile mechanical arm dynamic collision detection method based on the time-varying volume model comprises the following steps: constructing a digital twin joint body model which is completely consistent with the current physical state of a real mobile mechanical arm based on the pose of a mobile platform and the joint angle data of the mechanical arm, which are acquired in real time; based on the planned path, calculating the swept volume of the digital twin joint body model in the process of simulating and executing the planned path; and carrying out volume intersection operation on the swept volume and the three-dimensional environment map in the three-dimensional space, and judging whether a planned path is safe or not according to an operation result. The technical problems that a collision detection method in the prior art is too conservative, low in efficiency and incapable of covering risks under extreme poses and has tunnel effect security vulnerabilities are solved.

The invention provides a method for manufacturing a first side wall of an image sensor product, and the method comprises the steps: providing a semiconductor substrate, forming a logic device region on the substrate, the logic device region comprises an N-type well region and a P-type well region of an input / output device, and an N-type well region and a P-type well region of a core device, and enabling different well regions to be isolated through a shallow trench isolation structure; sequentially forming a gate oxide layer and a gate polycrystalline silicon layer on the substrate, and defining a gate region by patterning the gate oxide layer and the gate polycrystalline silicon layer; a polycrystalline silicon re-oxidation repair process is carried out on the surfaces of the grid polycrystalline silicon layer and the active region, so that the tunnel effect of subsequent ion implantation is avoided; forming an N-type lightly doped drain region and a P-type lightly doped drain region of the input / output device; depositing an oxide film layer on the surface of the device by adopting an atomic layer deposition process; and forming a first side wall structure by etching. The method can significantly reduce the process thermal budget.

The application discloses a space charge distribution calculation method based on tunneling effect and hole extraction restriction, and belongs to the technical field of electrical engineering, and comprises the following steps: a one-dimensional finite element structure model is established, taking polymer material as a main body and electrodes as boundaries; a periodic polarity reversal voltage is applied at the electrode boundary by coupling Maxwell electromagnetic field theory and Nernst-Planck theory, and a recombination carrier injection model and a hole extraction restricted boundary condition are introduced, so that a polymer material space charge distribution model based on tunneling effect and hole extraction restriction mechanism is obtained; and the polymer material space charge distribution model is solved to obtain the space charge distribution and electric field distortion law of the polymer material under the conditions of strong electric field and polarity reversal. The method solves the problem that the existing space charge model cannot effectively depict the tunneling emission and hole extraction restriction effect at the electrode interface, and provides important support for the polymer insulation aging research under the conditions of strong electric field and polarity reversal.

Examples of the present application disclose a memory, a storage system and an electronic product. The memory comprises a control circuit, a voltage loading circuit, a first driver, and a second driver. The voltage loading circuit, in response to a block selection signal received by a control terminal, is configured to load a first voltage to a control terminal of the first driver through a first output terminal, and load a second voltage to a control terminal of the second driver through a second output terminal. Because starting voltages may be loaded by different output terminals, all the drivers do not share the same starting voltage any longer, and performance degradation caused by a tunneling effect is avoided. Therefore, based on the memory provided by the examples of the present application, the performance degradation of various drivers can be improved.

The invention discloses an amplitude detection method for eliminating a multi-beam sounding sonar tunneling effect. The method comprises the following steps: collecting array element data of a receiving array; generating a beam forming amplitude data matrix according to the array element data; calculating a double-domain dynamic gain normalization matrix; calculating a sampling moment index corresponding to the amplitude maximum value of each receiving beam by using the double-domain dynamic gain normalization matrix, and calculating an amplitude detection time gate by using the index; and calculating propagation time: after the amplitude detection time gate is determined, solving the positions of the centroids of the beam forming amplitude data in all the receiving beam time gates by adopting a weighted average time method, and obtaining the propagation time corresponding to all the receiving beams. The improved amplitude detection method based on the double-domain dynamic gain normalization algorithm provided by the invention has the advantages of obvious tunnel effect inhibition, simple algorithm, no need of parameter setting, and convenience for engineering realization and application.

A non-volatile memory circuit includes a matrix of memory cells. Each memory cell includes a state transistor having a control gate and a floating gate. The state transistor is selected by a vertical selection transistor buried in a substrate and including a buried selection gate. The buried selection gate is common between the selection transistors of one and the same pair of memory cells. The buried selection gate is formed in one and the same selection gate region. The buried selection gate region has a surface indentation between each pair of twin memory cells. The surface indentation reduces a coupling by tunnel effect between the floating gates of the state transistors and the selection gate region.

In accordance with some embodiments of the present disclosure a tunneling-based selector is provided. The selector includes a multilayer barrier structure fabricated between a first electrode and a second electrode. The multilayer barrier structure includes a first layer of a first van der Waals (vdW) material; a second layer of a second vdW material; and a third layer of a third vdW material. The first layer of the first vdW material is fabricated between the second layer of the second vdW material and the third layer of the third vdW material. The electron affinity of the first layer of the first vdW material is lower than the second electron affinity of the second layer of the second vdW material and the electron affinity of the third layer of the vdW material.

A dielectric layer of a semiconductor device may be treated using an oxidation treatment process to tune the dielectric constant of the dielectric layer. For example, an etch stop layer (ESL) in an interconnect layer of the semiconductor device may be formed of a high dielectric constant (high-k) dielectric material, which provides etch selectivity for the ESL relative to other dielectric layers in the interconnect layer. A recess may be formed through the ESL and through the dielectric layers, and a conductive structure may be formed in the recess. Prior to formation of the conductive structure, an oxidation treatment operation may be performed to oxidize the exposed ends of the ESL in the recess. The oxidation treatment may lower the dielectric constant of the ends of the ESL, which may result in the ends of the ESL being less susceptible to current leakage through tunneling, hot-carrier injection, and / or thermionic emission.

Plasmonic biosensor device comprising a first and second electrode, a charge carrier tunnelling junction for providing charge carriers for generating electroluminescent light emission, that is in electrical connection with the first and second electrodes for application of a voltage potential difference. The second electrode comprises or forms a plasmonic structure including a plurality of optical nanoantennas or a plurality of electrically interconnected optical nanoantennas configured to generate plasmons and light emission via the charge carriers provided by charge carrier tunneling in the charge carrier tunnelling junction. The plurality of optical nanoantennas extend thereon.

The invention relates to a bearing-energy storage-structure health monitoring integrated composite material and application, and belongs to the field of functional composite materials. Structural health monitoring is realized through a quantum tunneling effect of the nano sensor under ultrasonic excitation, and mutual conversion between electric energy and chemical energy is completed through electronic physical adsorption or chemical reaction so as to realize energy storage capacity. Good aerodynamic configuration of the aircraft can be guaranteed, mechanical property requirements of structural load bearing can be met, structural weight and size can be reduced, electric energy can be stored to supply power to the aircraft locally, and structural health monitoring capability of the embedded nano sensor is matched, so that reliability of the aircraft is improved. The composite material intelligent skin structure integrating bearing, energy storage and health monitoring is achieved.

The invention discloses a reconfigurable two-dimensional floating gate memory which is of a layered structure, and a reconfigurable memory mechanism mainly depends on the photosensitive characteristic of a floating gate layer material, that is, illumination can improve the off-state current of the floating gate layer material. In a dark-state small gate voltage range, the floating gate layer is in a closed state, and at the moment, a storage mechanism is a capacitance coupling effect and shows short-term memory; under the action of illumination, the floating gate layer is opened, and a storage mechanism is switched to a Fowler-Nordheim tunneling effect, which is represented as long-term memory. The invention aims to solve the defects of single function and limited regulation and control means of the existing memory, realizes short-term and long-term memory dual-mode in the device through the '2T1C' layered structure design and the photosensitive characteristic of the two-dimensional material, can realize flexible switching of the two modes through external voltage or illumination, has the advantages of high-speed response of a DRAM and long-term maintenance of a Flash, and has the advantages of high-speed response of the DRAM and long-term maintenance of the Flash. And an efficient and flexible storage solution is provided for the fields of intelligent storage, brain-like computing and the like.

This invention relates to the field of computer storage technology and discloses a storage cell wear equalization method based on tunneling effect compensation. The method includes: monitoring the characteristic offset of the write and erase durations of the physical address cells to be equalized with the number of operation cycles to determine the tunnel oxide aging factor; constructing a topological interference model by combining the spatial spacing between physical address cells and the data update frequency, and performing interference boundary calculations to determine the physical stress divergence profile generated by the compensation voltage pulse; selecting idle physical address cells with stress values ​​below a safety threshold as cold zone nodes, and then correcting the address mapping conversion logic and implementing write redirection. This invention utilizes address mapping conversion logic to resolve physical stress conflicts in the logical dimension, suppresses the loss of induced charge caused by tunnel oxide damage, and effectively improves the data retention characteristics and system stability of the storage medium at the end of its lifespan.

A quantum electronic device with a charge detector for determining a property of a qubit, and a method for determining said property. The invention concerns to a quantum electronic device with at least one charge detector (3) configured to determine a property of a semiconductor quantum dot (5), and a method for determine a property of a semiconductor quantum dot (5) controlled by a plunger gate (13). The charge detector (3) is arranged at or in vicinity of the semiconductor quantum dot (5). The charge detector is a single electron box, SEB, detector including a conductive island (10) separated from an electrode (9) by means of a quantum tunnel barrier (11), wherein the quantum tunnel barrier is configured to facilitate electron tunneling indicative of quantum state variations. The tunneling is used to infer a state of a qubit associated with the quantum dot, wherein the electrode is connected to a circuitry configured to enable readout of the state of the qubit associated with the quantum dot.

The invention provides a low-blue-shift InGaN red light LED device based on a well-well coupling structure and a preparation method of the low-blue-shift InGaN red light LED device. The LED device comprises a substrate, a buffer layer, a non-doped GaN layer, an n-type doped GaN layer, a superlattice layer and / or a low-temperature GaN layer, a wide and shallow quantum well and tunneling barrier composite layer, an InGaN narrow and deep quantum well and red light barrier composite layer and a p-type region from bottom to top. The preparation method of the LED device comprises the step of sequentially epitaxially growing a buffer layer, a non-doped GaN layer, an n-type doped GaN layer, a superlattice layer and / or a low-temperature GaN layer, a wide and shallow quantum well and tunneling barrier composite layer, an InGaN narrow and deep quantum well and red light barrier composite layer and a p-type region on a substrate. Through the tunneling effect of the carriers, the concentration of the carriers in the light-emitting well is maintained, and the blue shift amplitude of the light-emitting wavelength of the InGaN-based red light LED is improved.

The application discloses a kind of mobile manipulator dynamic collision detection method and device based on time-varying volume model.The mobile manipulator dynamic collision detection method based on time-varying volume model includes the following steps: based on the pose of mobile platform and the joint angle data of manipulator obtained in real time, construct the digital twin joint body model that is completely consistent with the current physical state of real mobile manipulator;Based on the planned path, the swept volume of the digital twin joint body model in the process of simulating the execution of the planned path is calculated;Volume intersection operation is carried out on the swept volume and the three-dimensional environment map in three-dimensional space, and whether the planned path is safe is determined according to the operation result.The application solves the technical problems of the collision detection method in the prior art, such as being too conservative, low efficiency, unable to cover extreme pose risks and having tunnel effect security vulnerabilities.

The present application relates to the technical field of transistor, and relates to a P-type field effect transistor based on tunneling effect, which comprises a substrate, a buffer layer, a channel layer, a barrier layer and a first P-type material layer arranged in sequence; a second P-type material layer, a dielectric layer and a third P-type material layer are arranged above the first P-type material layer; a source electrode is arranged above the second P-type material layer; a drain electrode is arranged above the third P-type material layer; the dielectric layer covers the source electrode, the second P-type material layer, the third P-type material layer and the drain electrode; a gate electrode is arranged on the dielectric layer; the drain electrode and the third P-type material layer form an ohmic contact, and the source electrode and the second P-type material layer form a Schottky contact. The present application further provides a preparation method, which comprises the following steps: S1, providing an epitaxial structure; S2, depositing a drain electrode; S3, depositing a source electrode; S4, selectively etching a P-type material layer; S5, depositing a dielectric layer; S6, selectively removing the dielectric layer; and S7, depositing a gate electrode. The present application can guarantee the always-off characteristic and reduce the on-resistance.

To provide a polarization superjunction field effect transistor capable of significantly reducing the gate leakage current that flows when a positive voltage is applied to the gate electrode. 【Solution means】This field effect transistor includes a first undoped GaN layer 11, Al x , x , 1-x , x , 1-x , x , 1-x , 1-y , 1-x , 1-x , y Ga 1-x N layer 12 (0.17 ≤ x ≤ 0.35), a second undoped GaN layer 13, a p-type GaN layer 15, Al x Ga 1-x An intermediate layer 14 between the Al x Ga 1-x N layer and the second undoped GaN layer, a source electrode 18 and a drain electrode 19 on the Al x Ga 1-x N layer, and a gate electrode 17 on the p-type GaN layer. The intermediate layer is a graded Al x Ga 1-x N layer (x ≤ y < 0.5) in which the bandgap increases continuously and / or stepwise from the bandgap of the Al y Ga 1-y N layer at the interface between the N layer and the intermediate layer towards the interface between the second undoped GaN layer and the intermediate layer, and has a thickness such that carriers do not substantially move due to the tunneling effect.

This invention relates to the field of optoelectronic device technology, and more particularly to a negative capacitance tunneling phototransistor, its fabrication method, and its applications. The negative capacitance tunneling phototransistor of this invention is a structure combining ferroelectric materials and low-dimensional semiconductor heterojunction materials. It combines the properties of ferroelectric materials with the tunneling effect and photoelectric properties of low-dimensional semiconductor heterojunctions. Hafnium oxide-based ferroelectric gate dielectric replaces the gate dielectric layer of traditional phototransistors, providing a negative capacitance effect in the gate structure of the negative capacitance tunneling phototransistor to improve device performance. The negative capacitance effect of the ferroelectric material enhances the electrical performance of the tunneling field-effect transistor, improving the on / off ratio and on-state current, and further reducing the subthreshold swing, while simultaneously improving the photoelectric responsivity and response speed. The combination of the gate and the low-dimensional semiconductor heterojunction achieves ultra-low subthreshold swing and no hysteresis. Furthermore, it possesses advantages such as good stability, simple structure, and ease of fabrication.

The invention discloses a quantum annealing attack method for resisting the solution of an LWE problem in quantum cryptography. The quantum annealing attack method comprises the following steps: accelerating the solution of the problem by using the unique quantum tunneling effect of a quantum annealing algorithm; the method comprises the steps that an LWE problem is reduced into an SIS problem, and the SIS problem is mapped into an SVP problem to be solved; in the BKZ block reduction, an Ising Hamiltonian is only constructed for a sub-lattice window, and candidate short vectors are searched by quantum annealing; and the candidate vectors are used for lattice basis updating, and iteration is carried out to obtain the shortest vector of the SVP problem so as to complete LWE problem solving. According to the method, a quantum calculation step is used for solving SVP in a sublattice, and quantum bits and calculation overhead are increased along with the dimension of the sublattice instead of the scale increase of the whole lattice. According to the method and the device, the quantum resource consumption for solving the large-scale LWE problem is remarkably reduced, the implementability of solving the large-scale LWE problem on the current quantum computing equipment is improved, and a new thought is provided for evaluating the security of anti-quantum cryptography based on the LWE problem.

The application discloses a kind of based on hydrogen bond self-repairing-conductive self-diagnosis fiber composite material and preparation method thereof, belong to intelligent diagnosis and self-repairing fiber reinforced resin matrix composite material and its preparation technical field.The present application solves the problem that the existing fiber composite material cannot accurately locate and identify damage area before damage repair, which leads to the damage inside the material cannot be timely healed.The present application uses micro-nano multi-level conductive filler composed of nanometer carbon nanotube, micrometer flaky graphite powder and unidirectional short-cut carbon fiber to construct quantum tunnel effect and three-dimensional conductive framework, realizes damage location based on electro-mechanical correspondence and gives self-sensing function, realizes accurate positioning of damage (error <1mm square).And further using multiple reversible hydrogen bond system composed of acrylamide, polyethylene imine and epoxy resin, achieve self-repairing effect of composite fiber material, test results show that at least 90% or more self-repairing efficiency is realized at room temperature.

The invention provides a tunneling field effect transistor with a vertical channel, a preparation method of the tunneling field effect transistor and electronic equipment. The transistor comprises a substrate, a first source-drain layer, a channel layer and a second source-drain layer, a first transverse groove surrounding the first channel region and a second transverse groove surrounding the second channel region are formed between the first source-drain layer and the second source-drain layer; a gate dielectric layer; and a gate layer including a first gate region parallel to the surface of the substrate and a second gate region extending in a vertical direction. According to the invention, the tunneling field effect transistor with the vertical channel is realized, the area occupied by the device in the horizontal direction is reduced, and the density of the device is improved; and meanwhile, the control effect on the tunneling effect of the channel layer is improved by utilizing the ring gate design, the first channel region and the second channel region are combined, the preparation of the channel with the controllable length is realized, meanwhile, self-alignment during the preparation of the gate layer is formed, the requirement of the device on a photoetching process is effectively reduced, and the performance of the device is improved.

This invention relates to an anti-crystallization light molecular solution with an ultrawide supercooling window and its preparation method. The method first involves heating a mixture of a low-molecular-weight polyol and a quaternary ammonium salt to obtain a deep eutectic solvent, which is then uniformly mixed with water. This invention constructs a "competitive hydrogen bond network" composed of the polyol, quaternary ammonium salt, and water, and utilizes the nuclear quantum tunneling effect at low temperatures to synergistically suppress the ordered crystallization of water molecules. The resulting anti-crystallization light molecular solution has a glass transition temperature as low as -130°C, maintains a stable liquid state over an ultrawide temperature range, and possesses low viscosity, high fluidity, and good conductivity, making it widely applicable as a cryogenic functional medium in polar, deep-sea, and aerospace fields.

Examples of the present application disclose a memory, a storage system and an electronic product. The memory comprises a control circuit, a voltage loading circuit, a first driver, and a second driver. The voltage loading circuit, in response to a block selection signal received by a control terminal, is configured to load a first voltage to a control terminal of the first driver through a first output terminal, and load a second voltage to a control terminal of the second driver through a second output terminal. Because starting voltages may be loaded by different output terminals, all the drivers do not share the same starting voltage any longer, and performance degradation caused by a tunneling effect is avoided. Therefore, based on the memory provided by the examples of the present application, the performance degradation of various drivers can be improved.

The invention provides a solar cell, a preparation method thereof and a photovoltaic module. The solar cell comprises a silicon substrate, a first doped polycrystalline silicon layer, a second doped polycrystalline silicon layer and a conduction block, the back surface of the silicon substrate is provided with a first doped region, a second doped region and an isolation region, and the isolation region is located between the first doped region and the second doped region; the first doped polycrystalline silicon layer is arranged on the back surface of the silicon substrate and located in the first doped region, the second doped polycrystalline silicon layer is arranged on the back surface of the silicon substrate and located in the second doped region, and the doping types of the first doped polycrystalline silicon layer and the second doped polycrystalline silicon layer are opposite; the conduction block is arranged on the back face of the silicon substrate and located in the first doped region, the conduction block comprises a third doped polycrystalline silicon layer, the third doped polycrystalline silicon layer is the same as the second doped polycrystalline silicon layer and the silicon substrate in doping type, and the third doped polycrystalline silicon layer is electrically contacted with the first doped polycrystalline silicon layer and the silicon substrate through the tunneling effect. The solar cell is not easy to have a hot spot phenomenon, and the influence on the efficiency of the module is small.