65 results about "Tunnelling effect" patented technology

To solve the problem in which: electric charges generated by a tunnel effect increase in proportion to the area of a region where the electric charges are detected; and when the area of the region where the electric charges are detected is reduced, light detection efficiency may be reduced.SOLUTION: The magnitude of the potential of a fourth semiconductor region is lower than the magnitude of the potential of a portion between the fourth semiconductor region and a third semiconductor region, and the difference between the magnitude of the potential of a first semiconductor region and the magnitude of the potential of a second semiconductor region is larger than the difference between the magnitude of the potential of the fourth semiconductor region and the magnitude of the potential of the portion between the fourth semiconductor region and the third semiconductor region. The magnitude of the potential of the third semiconductor region is lower than the magnitude of the potential of the fourth semiconductor region, and the difference between the magnitude of the potential of the first semiconductor region and the magnitude of the potential of the third semiconductor region is larger than the difference between the magnitude of the potential of the second semiconductor region and the magnitude of the potential of the fourth semiconductor region.SELECTED DRAWING: Figure 1

The invention relates to the technical field of electromagnetic relay control, in particular to an electromagnetic relay control system, which comprises a relay execution unit, a contact state monitoring unit and an intelligent viscosity elimination control unit, and is characterized in that the contact state monitoring unit acquires quantum tunneling effect impedance spectroscopy and acoustic emission energy entropy change signals in real time; the intelligent viscosity-eliminating control unit analyzes signals through a fusion welding risk multi-dimensional evaluator, triggers a three-stage control sequence, firstly starts a magnetostriction high-frequency oscillator to inject an inverted eddy current array, activates a hysteresis loop restorer to apply a gradient demagnetization potential field if the fusion welding risk multi-dimensional evaluator is not recovered, and finally, recovers the fusion welding risk multi-dimensional evaluator; when an acoustic emission signal is abnormal, a chaotic encryption message is generated through the fault feature topology generator and is linked with the magnetic solitary wave breaking device, ultrasonic frequency mechanical energy can be captured and converted into regenerative current, an adhesion evolution path is reconstructed after diagnosis, the problems of contact adhesion risk identification lagging and lack of multi-physics field cooperative control in the prior art are solved, and the reliability of the contact adhesion risk identification is improved. And the adhesion early warning success rate and the removal efficiency are improved.

The invention relates to the technical field of heterogeneous unmanned aerial vehicle cluster task planning and intelligent scheduling, and discloses a heterogeneous unmanned aerial vehicle cluster intelligent task planning method, which is characterized by comprising task and unmanned aerial vehicle information initialization, task preliminary allocation based on a quantum annealing algorithm, real-time adjustment based on reinforcement learning, and a communication and cooperation mechanism. Executing and monitoring a task; the super-strong parallel computing capability and the quantum tunneling effect of a quantum annealing algorithm are utilized to quickly process a large-scale task allocation problem and find an approximate range of a globally optimal solution, and then an unmanned aerial vehicle cluster continuously learns and adjusts a task execution strategy according to real-time environment feedback in a task execution process by means of reinforcement learning, so that the task execution efficiency is improved. Therefore, the method adapts to dynamically changing scenes.

The invention provides a discontinuous metal film with a tunneling effect, a tunneling electrode chip and a preparation method of the tunneling electrode chip. A large-area uniform discontinuous metal film grows in situ on a glass substrate through a magnetron sputtering deposition method, and a charge tunneling structure with a random nano array is constructed. The discontinuous metal thin film comprises a substrate and a nano gap thin film arranged on the substrate, the nano gap thin film comprises a plurality of nano islands and a plurality of nano gaps which are randomly distributed, and a nano gap is formed between any two adjacent nano islands and a nano gap lt; 10 nm; the thickness of the nano-gap film is lt; the wavelength is 100 nm. According to the tunneling electrode chip, atomic-scale thickness control is achieved through high-precision thin film deposition, the uniformity of multi-batch devices is remarkably improved, the yield is improved by 50% or above compared with a traditional method, the limitation of high cost of micro-nano machining faced by a traditional tunneling device is broken through, and the tunneling electrode chip has the sensitive response capacity for different small molecule media and is suitable for large-scale popularization and application. Molecular information can be presented in the form of transient conductance information.

The invention discloses a pipeline air tightness detection system and method, and relates to the technical field of pipeline detection, the pipeline air tightness detection system comprises a magnetic field control and adjustment assembly, a pipeline adjustment assembly, a front-end pipeline internal detection assembly and a flexible adjustment rod, and the whole system is composed of the magnetic field control and adjustment assembly, the pipeline adjustment assembly, the front-end pipeline internal detection assembly and the flexible adjustment rod. According to the invention, modularized installation is realized, magnetic particle suspension liquid detection is utilized, pipeline leakage points are positioned through magnetic field changes, ultrasonic detection is utilized, internal structure defects and wall thickness changes of the pipeline are detected, a microstructure is detected through a quantum tunneling effect, a multi-dimensional detection method is formed, the pipeline condition is comprehensively evaluated, and the whole device is simple and convenient to operate, high in detection precision and high in reliability. The device is simple in structure and easy to operate by workers, can quickly detect a water pipe, an air pipe and an oil pipe, timely discover tiny manufacturing defects and improve the quality and safety of the whole vehicle in the fuel vehicle production process, and assists maintenance personnel to efficiently formulate a scheme, shorten the maintenance time and reduce the cost in the maintenance process.

The present invention provides a discontinuous metal film with a tunneling effect, a tunneling electrode chip, and a method for preparing the same. A large-area uniform discontinuous metal film is in situ grown on a glass substrate by magnetron sputtering deposition, constructing a charge tunneling structure with a random nanoarray. The discontinuous metal film comprises a substrate and a nanogap film disposed on the substrate. The nanogap film comprises a number of randomly distributed nanoislands and a number of nanogaps. A nanogap is formed between any two adjacent nanoislands, and the nanogap is <10 nm. The thickness of the nanogap film is <100 nm. The tunneling electrode chip achieves atomic-level thickness control through high-precision thin film deposition, significantly improving the uniformity of multiple batches of devices and increasing the yield by more than 50% compared to traditional methods. This breaks through the expensive micro-nano processing limitations faced by traditional tunneling devices, has the ability to sensitively respond to different small molecule media, and can present molecular information as transient conductivity information.

The invention relates to the field of all-weather safety monitoring in the chemical industry, and discloses an all-weather chemical plant monitoring method, which comprises the following steps: dynamically acquiring quantum state measurement data of environmental parameters through a quantum dot array, capturing parameters such as temperature, pressure and gas concentration in real time by the quantum dot array through a tunneling effect, the sensing principle is based on the displacement effect of the quantum limited energy level; mapping the measurement data to a five-dimensional AdS spatio-temporal manifold and calculating an Einstein tensor; based on the Einstein tensor, solving topology invariant and curvature evolution of the space-time manifold; generating an algebraic decision instruction according to the topology invariant; and the encrypted control signal is fed back to the execution mechanism through the topology photon link. Through dynamic coupling of the quantum dot array and the five-dimensional AdS space-time manifold, cross-scale correlation monitoring of quantum state fluctuation and macroscopic deformation is achieved, the recognition blind area of a traditional method for micro-nano defects is broken through, and the early detection rate of pipeline microcracks is increased by two orders of magnitude.

The embodiment of the invention relates to a 10kV cable partial discharge signal detection and positioning method based on temperature influence. The method comprises the following steps: arranging an optical fiber temperature sensor and an ultrahigh frequency partial discharge sensor for a 10kV cable; performing temperature compensation on the discharge signal based on a Schottky-tunneling effect model, synchronously acquiring point wire core temperature, outer sheath temperature and the discharge signal, and calculating the wire core temperature of the 10kV cable by using a thermal circuit model; and calculating the position of a discharge point according to the propagation velocity of the discharge signal after the temperature compensation is corrected according to the core temperature of the 10kV cable. According to the invention, temperature compensation is carried out on the discharge signal based on the Schottky-tunneling effect model, the distortion of the discharge signal is eliminated, and the detection precision in a temperature-sensitive environment is improved; the signal propagation speed is corrected through the thermal circuit model, the problem that the positioning error is large under the high-temperature working condition in a traditional method is solved, and meter-scale precision positioning is achieved.

The invention discloses a fiber composite material based on hydrogen bond self-repairing and conductive self-diagnosis and a preparation method of the fiber composite material, and belongs to the technical field of intelligent diagnosis and self-repairing fiber reinforced resin-based composite materials and preparation of the intelligent diagnosis and self-repairing fiber reinforced resin-based composite materials. According to the method, the problem that the self-healing effect cannot be timely obtained on the internal damage of the material due to the fact that the damage area cannot be accurately positioned and identified before the damage of the existing fiber composite material is repaired is solved. According to the invention, a quantum tunnel effect and a three-dimensional conductive skeleton are constructed by using a micro-nano multi-stage conductive filler composed of a nano carbon nanotube, micron flake graphite powder and unidirectional short carbon fiber, a damage occurrence position is realized based on an electro-mechanical corresponding relation, a self-sensing function is given, and accurate positioning of the damage is realized (the error is less than 1mm). A multiple reversible hydrogen bond system formed by acrylamide, polyethyleneimine and epoxy resin is further utilized, the self-repairing effect of the composite fiber material is achieved, and the test result shows that the self-repairing efficiency of at least 90% or above is achieved at the normal temperature.

The invention relates to the technical field of low-temperature batteries, and discloses a low-temperature-resistant organic flow battery electrolyte preparation method, which comprises: S1, optimizing the composition and the ratio of an electrolyte, selecting a bipolar porphyrin molecule as an active material, a low-viscosity ionic liquid as a supporting electrolyte, and an ultra-low freezing point solvent as a co-solvent, a pi-pi stacking reinforcing agent is added; s2, optimizing an active molecular structure through quantum chemistry calculation, and calculating HOMO-LUMO energy level difference, so that the HOMO-LUMO energy level difference is in an interval of 3.0 eV to 5.0 eV; and S3, calculating and adjusting molecular configuration and bond length through a quantum tunneling effect. By introducing the technical scheme of combining the quantum tunneling effect and the electrochemical stability, the effect of maintaining the stability of the battery in a low-temperature environment is realized, and the accurate low-temperature battery performance evaluation method is provided by combining molecular dynamics simulation and experimental verification. The defect of battery behavior prediction in a low-temperature environment in the traditional technology is overcome.

The invention discloses a mobile mechanical arm dynamic collision detection method and device based on a time-varying volume model. The mobile mechanical arm dynamic collision detection method based on the time-varying volume model comprises the following steps: constructing a digital twin joint body model which is completely consistent with the current physical state of a real mobile mechanical arm based on the pose of a mobile platform and the joint angle data of the mechanical arm, which are acquired in real time; based on the planned path, calculating the swept volume of the digital twin joint body model in the process of simulating and executing the planned path; and carrying out volume intersection operation on the swept volume and the three-dimensional environment map in the three-dimensional space, and judging whether a planned path is safe or not according to an operation result. The technical problems that a collision detection method in the prior art is too conservative, low in efficiency and incapable of covering risks under extreme poses and has tunnel effect security vulnerabilities are solved.

The invention provides a defect detection system for a ferromagnetic metal device, which is characterized in that a magnetic flux leakage detection excitation coil winds around a C-shaped magnetic core to apply a first magnetic field to a to-be-detected ferromagnetic metal device, and an eddy current detection excitation coil applies a second magnetic field to the to-be-detected ferromagnetic metal device, the tunneling effect magnetoresistive sensor array collects a first magnetic signal under the action of a first magnetic field and collects a second magnetic signal under the action of a second magnetic field; each signal processing circuit receives a first magnetic signal and a second magnetic signal from the connected tunneling effect magnetoresistive sensor; and the FPGA main control module is used for respectively determining a magnetic flux leakage detection result and an eddy current detection result based on the first magnetic signals and the second magnetic signals received by all the signal processing circuits. According to the technical scheme, eddy current detection and magnetic flux leakage detection methods are combined, the high-sensitivity TMR sensor array and the efficient FPGA data processing system are adopted, and the detection capacity of the buried defects in the ferromagnetic metal material is improved.

The invention provides a method for manufacturing a first side wall of an image sensor product, and the method comprises the steps: providing a semiconductor substrate, forming a logic device region on the substrate, the logic device region comprises an N-type well region and a P-type well region of an input / output device, and an N-type well region and a P-type well region of a core device, and enabling different well regions to be isolated through a shallow trench isolation structure; sequentially forming a gate oxide layer and a gate polycrystalline silicon layer on the substrate, and defining a gate region by patterning the gate oxide layer and the gate polycrystalline silicon layer; a polycrystalline silicon re-oxidation repair process is carried out on the surfaces of the grid polycrystalline silicon layer and the active region, so that the tunnel effect of subsequent ion implantation is avoided; forming an N-type lightly doped drain region and a P-type lightly doped drain region of the input / output device; depositing an oxide film layer on the surface of the device by adopting an atomic layer deposition process; and forming a first side wall structure by etching. The method can significantly reduce the process thermal budget.

The application discloses a space charge distribution calculation method based on tunneling effect and hole extraction restriction, and belongs to the technical field of electrical engineering, and comprises the following steps: a one-dimensional finite element structure model is established, taking polymer material as a main body and electrodes as boundaries; a periodic polarity reversal voltage is applied at the electrode boundary by coupling Maxwell electromagnetic field theory and Nernst-Planck theory, and a recombination carrier injection model and a hole extraction restricted boundary condition are introduced, so that a polymer material space charge distribution model based on tunneling effect and hole extraction restriction mechanism is obtained; and the polymer material space charge distribution model is solved to obtain the space charge distribution and electric field distortion law of the polymer material under the conditions of strong electric field and polarity reversal. The method solves the problem that the existing space charge model cannot effectively depict the tunneling emission and hole extraction restriction effect at the electrode interface, and provides important support for the polymer insulation aging research under the conditions of strong electric field and polarity reversal.

Examples of the present application disclose a memory, a storage system and an electronic product. The memory comprises a control circuit, a voltage loading circuit, a first driver, and a second driver. The voltage loading circuit, in response to a block selection signal received by a control terminal, is configured to load a first voltage to a control terminal of the first driver through a first output terminal, and load a second voltage to a control terminal of the second driver through a second output terminal. Because starting voltages may be loaded by different output terminals, all the drivers do not share the same starting voltage any longer, and performance degradation caused by a tunneling effect is avoided. Therefore, based on the memory provided by the examples of the present application, the performance degradation of various drivers can be improved.

The invention discloses an amplitude detection method for eliminating a multi-beam sounding sonar tunneling effect. The method comprises the following steps: collecting array element data of a receiving array; generating a beam forming amplitude data matrix according to the array element data; calculating a double-domain dynamic gain normalization matrix; calculating a sampling moment index corresponding to the amplitude maximum value of each receiving beam by using the double-domain dynamic gain normalization matrix, and calculating an amplitude detection time gate by using the index; and calculating propagation time: after the amplitude detection time gate is determined, solving the positions of the centroids of the beam forming amplitude data in all the receiving beam time gates by adopting a weighted average time method, and obtaining the propagation time corresponding to all the receiving beams. The improved amplitude detection method based on the double-domain dynamic gain normalization algorithm provided by the invention has the advantages of obvious tunnel effect inhibition, simple algorithm, no need of parameter setting, and convenience for engineering realization and application.

To provide a resonant tunneling diode and a terahertz oscillator capable of further performance improvement. The resonant tunneling diode includes: a multi-quantum well structure that is composed of a group-III nitride semiconductor; a first electrode that is connected to one of sides of the multi-quantum well structure; and a second electrode that is connected to the other side of the multi-quantum well structure. The multi-quantum well structure includes a first barrier layer, a first quantum well layer, a second barrier layer, a second quantum well layer, and a third barrier layer, which are arranged in order from the first electrode toward the second electrode. The first barrier layer, the second barrier layer, and the third barrier layer have a thickness through which a carrier can pass by a tunneling effect. The first quantum well layer and the second quantum well layer each have a potential gradient by spontaneous polarization or a sum of spontaneous polarization and piezoelectric polarization, and have mutually different thicknesses. The first quantum well layer and the second quantum well layer have compositions with different magnitudes of potential energy.

The invention belongs to the technical field of transistors, and particularly relates to a tunneling field effect transistor, a preparation method thereof, a photon chip and optical communication equipment. According to the tunneling field effect transistor, the tunnel junction is formed in the tunneling field active layer, the tunnel junction has a certain junction area and is perpendicular to the gate electrode, the distance of a tunneling channel is further shortened through the strong control force of the gate electrode on the whole tunnel junction, the on-state current of the tunneling field effect transistor can be improved, and the power consumption of a device can be reduced. Meanwhile, according to the design mode, the reconfigurable characteristic of the field tunneling effect transistor can be conveniently achieved, so that the flexibility and adaptability of the device are improved, and the design mode is crucial for developing smaller and more energy-saving circuits.

A non-volatile memory circuit includes a matrix of memory cells. Each memory cell includes a state transistor having a control gate and a floating gate. The state transistor is selected by a vertical selection transistor buried in a substrate and including a buried selection gate. The buried selection gate is common between the selection transistors of one and the same pair of memory cells. The buried selection gate is formed in one and the same selection gate region. The buried selection gate region has a surface indentation between each pair of twin memory cells. The surface indentation reduces a coupling by tunnel effect between the floating gates of the state transistors and the selection gate region.

In accordance with some embodiments of the present disclosure a tunneling-based selector is provided. The selector includes a multilayer barrier structure fabricated between a first electrode and a second electrode. The multilayer barrier structure includes a first layer of a first van der Waals (vdW) material; a second layer of a second vdW material; and a third layer of a third vdW material. The first layer of the first vdW material is fabricated between the second layer of the second vdW material and the third layer of the third vdW material. The electron affinity of the first layer of the first vdW material is lower than the second electron affinity of the second layer of the second vdW material and the electron affinity of the third layer of the vdW material.

The embodiment of the present application provides a stress sensor and a preparation method thereof, and a stress sensing device. When the upper substrate or the lower substrate of the stress sensor is subjected to pressure, the elastic insulating protrusion structure of the tunneling layer is deformed, so that the distance between the low-square-resistance layer and the high-square-resistance layer is shortened, and a tunneling effect occurs, generating a tunneling current, and the magnitude of the tunneling current is proportional to the magnitude of the pressure. The present invention fills a tunneling layer between the high-square-resistance layer and the low-square-resistance layer instead of a traditional gasket structure, thereby greatly reducing the thickness of the stress sensor, reducing the minimum stress trigger threshold, and improving the sensitivity of the sensor, which can realize the extraction of weak signals and effectively extend the life of the sensor.

A dielectric layer of a semiconductor device may be treated using an oxidation treatment process to tune the dielectric constant of the dielectric layer. For example, an etch stop layer (ESL) in an interconnect layer of the semiconductor device may be formed of a high dielectric constant (high-k) dielectric material, which provides etch selectivity for the ESL relative to other dielectric layers in the interconnect layer. A recess may be formed through the ESL and through the dielectric layers, and a conductive structure may be formed in the recess. Prior to formation of the conductive structure, an oxidation treatment operation may be performed to oxidize the exposed ends of the ESL in the recess. The oxidation treatment may lower the dielectric constant of the ends of the ESL, which may result in the ends of the ESL being less susceptible to current leakage through tunneling, hot-carrier injection, and / or thermionic emission.

Plasmonic biosensor device comprising a first and second electrode, a charge carrier tunnelling junction for providing charge carriers for generating electroluminescent light emission, that is in electrical connection with the first and second electrodes for application of a voltage potential difference. The second electrode comprises or forms a plasmonic structure including a plurality of optical nanoantennas or a plurality of electrically interconnected optical nanoantennas configured to generate plasmons and light emission via the charge carriers provided by charge carrier tunneling in the charge carrier tunnelling junction. The plurality of optical nanoantennas extend thereon.

The invention relates to a bearing-energy storage-structure health monitoring integrated composite material and application, and belongs to the field of functional composite materials. Structural health monitoring is realized through a quantum tunneling effect of the nano sensor under ultrasonic excitation, and mutual conversion between electric energy and chemical energy is completed through electronic physical adsorption or chemical reaction so as to realize energy storage capacity. Good aerodynamic configuration of the aircraft can be guaranteed, mechanical property requirements of structural load bearing can be met, structural weight and size can be reduced, electric energy can be stored to supply power to the aircraft locally, and structural health monitoring capability of the embedded nano sensor is matched, so that reliability of the aircraft is improved. The composite material intelligent skin structure integrating bearing, energy storage and health monitoring is achieved.

The invention discloses a method for predicting the piezoresistive performance of a multidirectional carbon nanotube resin-based strain sensor, and the method comprises the steps: based on a spherical model, considering the conductivity and volume fraction of CNTs, considering the permeation threshold value of a composite material, and considering the weakening of the conductivity caused by the tunneling effect between CNTs in the composite material; starting from several aspects of influence of strain on the volume fraction of CNTs and the conductivity of a tunnel, a strain relation in three directions is established, so that a piezoresistive performance prediction model is obtained. Compared with a test result, the error is within 15%, the minimum prediction error of the sensitivity of the sensor is-0.56%, and the method has the advantages of high efficiency and accuracy.

The invention discloses a reconfigurable two-dimensional floating gate memory which is of a layered structure, and a reconfigurable memory mechanism mainly depends on the photosensitive characteristic of a floating gate layer material, that is, illumination can improve the off-state current of the floating gate layer material. In a dark-state small gate voltage range, the floating gate layer is in a closed state, and at the moment, a storage mechanism is a capacitance coupling effect and shows short-term memory; under the action of illumination, the floating gate layer is opened, and a storage mechanism is switched to a Fowler-Nordheim tunneling effect, which is represented as long-term memory. The invention aims to solve the defects of single function and limited regulation and control means of the existing memory, realizes short-term and long-term memory dual-mode in the device through the '2T1C' layered structure design and the photosensitive characteristic of the two-dimensional material, can realize flexible switching of the two modes through external voltage or illumination, has the advantages of high-speed response of a DRAM and long-term maintenance of a Flash, and has the advantages of high-speed response of the DRAM and long-term maintenance of the Flash. And an efficient and flexible storage solution is provided for the fields of intelligent storage, brain-like computing and the like.

This invention relates to the field of computer storage technology and discloses a storage cell wear equalization method based on tunneling effect compensation. The method includes: monitoring the characteristic offset of the write and erase durations of the physical address cells to be equalized with the number of operation cycles to determine the tunnel oxide aging factor; constructing a topological interference model by combining the spatial spacing between physical address cells and the data update frequency, and performing interference boundary calculations to determine the physical stress divergence profile generated by the compensation voltage pulse; selecting idle physical address cells with stress values ​​below a safety threshold as cold zone nodes, and then correcting the address mapping conversion logic and implementing write redirection. This invention utilizes address mapping conversion logic to resolve physical stress conflicts in the logical dimension, suppresses the loss of induced charge caused by tunnel oxide damage, and effectively improves the data retention characteristics and system stability of the storage medium at the end of its lifespan.

A quantum electronic device with a charge detector for determining a property of a qubit, and a method for determining said property. The invention concerns to a quantum electronic device with at least one charge detector (3) configured to determine a property of a semiconductor quantum dot (5), and a method for determine a property of a semiconductor quantum dot (5) controlled by a plunger gate (13). The charge detector (3) is arranged at or in vicinity of the semiconductor quantum dot (5). The charge detector is a single electron box, SEB, detector including a conductive island (10) separated from an electrode (9) by means of a quantum tunnel barrier (11), wherein the quantum tunnel barrier is configured to facilitate electron tunneling indicative of quantum state variations. The tunneling is used to infer a state of a qubit associated with the quantum dot, wherein the electrode is connected to a circuitry configured to enable readout of the state of the qubit associated with the quantum dot.

The invention provides a low-blue-shift InGaN red light LED device based on a well-well coupling structure and a preparation method of the low-blue-shift InGaN red light LED device. The LED device comprises a substrate, a buffer layer, a non-doped GaN layer, an n-type doped GaN layer, a superlattice layer and / or a low-temperature GaN layer, a wide and shallow quantum well and tunneling barrier composite layer, an InGaN narrow and deep quantum well and red light barrier composite layer and a p-type region from bottom to top. The preparation method of the LED device comprises the step of sequentially epitaxially growing a buffer layer, a non-doped GaN layer, an n-type doped GaN layer, a superlattice layer and / or a low-temperature GaN layer, a wide and shallow quantum well and tunneling barrier composite layer, an InGaN narrow and deep quantum well and red light barrier composite layer and a p-type region on a substrate. Through the tunneling effect of the carriers, the concentration of the carriers in the light-emitting well is maintained, and the blue shift amplitude of the light-emitting wavelength of the InGaN-based red light LED is improved.

The application discloses a kind of mobile manipulator dynamic collision detection method and device based on time-varying volume model.The mobile manipulator dynamic collision detection method based on time-varying volume model includes the following steps: based on the pose of mobile platform and the joint angle data of manipulator obtained in real time, construct the digital twin joint body model that is completely consistent with the current physical state of real mobile manipulator;Based on the planned path, the swept volume of the digital twin joint body model in the process of simulating the execution of the planned path is calculated;Volume intersection operation is carried out on the swept volume and the three-dimensional environment map in three-dimensional space, and whether the planned path is safe is determined according to the operation result.The application solves the technical problems of the collision detection method in the prior art, such as being too conservative, low efficiency, unable to cover extreme pose risks and having tunnel effect security vulnerabilities.