134 results about "Tunnelling effect" patented technology

A data line and an amorphous silicon pattern are formed on a substrate. The first electrode pattern is extended from the data line and overlaps an edge of the amorphous silicon pattern. The second electrode pattern is made of the same metal as the first electrode pattern and overlaps the edge of the amorphous silicon pattern at an opposite side of the first electrode pattern. Edges of the first and the second electrode patterns are sharply formed so that a tunneling effect easily occurs through the amorphous silicon pattern. An indium-tin-oxide pattern for a capacitor is formed at the end of the second electrode pattern. The capacitor is formed between the ITO pattern and a common electrode.

The invention discloses a composite accelerometer based on a capacitance effect and a tunnel effect. The composite accelerometer comprises a bonding substrate, a cushion liner frame body, a supporting frame body, a cantilever beam and a mass block. A tunnel point is arranged at the center of the lower surface of the mass block. The composite accelerometer based on the capacitance effect and the tunnel effect has the advantages of adopting the manner of integrating capacitance detection and tunnel effect detection and detecting a capacitor and a tunnel. Detection of a low detection threshold value, a wide range and high sensitivity of an acceleration speed is achieved. Meanwhile, accurate measurement of the acceleration speed of a known acceleration speed value circumstance is carried out. The integrated design is adopted and the composite accelerometer is reasonable in structure, high in sensitivity, simple in detection circuit, convenient to use, good in reliability and suitable for microminiaturization.

An increased area of an element transistor to be evaluated causes an increased leakage current due to a tunnel effect, leading to a reduced accuracy in predicting a TDDB lifetime. A test element group (TEG) 1 is a pattern for evaluating electric characteristics, comprising a plurality of unit transistors T11, T12, T13, T21, T22, T23, T31, T32, T33, which are arranged so as to form a lattice-shaped pattern. Each of the unit transistors comprises a gate dielectric serving as an object to be evaluated, and source region and drain region, which are a short-circuited.

The invention provides a strained superlattice tunnel junction ultraviolet LED (light emitting diode) epitaxial structure and a production method thereof. The epitaxial structure from top to bottom comprises: an epitaxial growth substrate, an AlN buffer layer, an n-type AlGaN layer, a multiple quantum wells, an electron blocking layer, a strained superlattice, an n-type degenerate doped AlGaN layer, and an n-type Si-doped AlGaN layer. The strained superlattice comprises a p-type AlGaN layer and an AlyGa1-yN / AlxGa1-xN. An AlGaN energy band, under effects of a polarized electric field, moves as a whole along a low energy direction. A superlattice structure contacts a heavily doped n-type AlGaN to form a p-AlGaN / SSL / n *-AlGaN tunnel junction. Electrons of a p-type AlGaN valence band, under effects of an external electric field, carried out tunneling through a tunnel effect to one side of the n-type AlGaN, and a hole is formed in the p-type AlGaN. The n-AlGaN is used as the cladding material instead of the p-type AlGaN, so that the problem of the p-type ohmic contact is avoided.

A data line and an amorphous silicon pattern are formed on a substrate. The first electrode pattern is extended from the data line and overlaps an edge of the amorphous silicon pattern. The second electrode pattern is made of the same metal as the first electrode pattern and overlaps the edge of the amorphous silicon pattern at an opposite side of the first electrode pattern. Edges of the first and the second electrode patterns are sharply formed so that a tunneling effect easily occurs through the amorphous silicon pattern. An indium-tin-oxide pattern for a capacitor is formed at the end of the second electrode pattern. The capacitor is formed between the ITO pattern and a common electrode.

The present invention discloses a tunneling diode having a band gap material as the collector. This increases the tunneling of electrons having greater energy than the Fermi level from emitter to collector, leading to an increase in the efficiency of heat pumping or power generation by the diode. In a further embodiment the collector comprises a semiconductor on which a layer of band gap material is deposited. This approach also reduces back tunneling of electrons from collector to emitter.

Bidimensional or three-dimensional, single-layer or multilayer nanostructure, whose electric conductivity B in the total structure has a highly non-linear behavior due to local tunnel effect between adjacent clusters, and it can be varied at will by varying the voltage applied to the electrodes.

A device and method are provided for producing negatively charged nanoparticles. The device comprises a power supply, an electron supermicroemitter and a controller, the power supply connects with the electron supermicroemitter and the controller respectively. The potential of the electron supermicroemitter to the ground is controlled in the range of −2 kV to −29 kV by the power supply and the controller in accordance with the shape, size and different application of the materials of the emitter, so as to form field electron emitting of tunneling effect. The energy of electrons with high current density produced by the emitter can be adjusted during the electrons' colliding with particles in aerosol such that the electrons are attached to the nanoparticles of different size with wider energy band to form negatively charged nanoparticles.

The invention discloses antistatic corrugated board paint and a preparation method thereof. The antistatic corrugated board paint is characterized in that a conductive filler is positioned in a dry box and is dried to constant weight; a coupling agent is sprayed on the conductive filler, is sequentially added with film-forming resin, a mixed solvent and a dispersant and is evenly stirred to form a primary mixture; and the viscosity of the primary mixture after ball milling is regulated through a diluent for the ball milling of the primary mixture so as to obtain the antistatic corrugated board paint. The antistatic corrugated board paint has a more compact conductive structure to form a good interbedded communication structure and has a smoother conductive passage, thereby reducing the resistivity of the paint; the paint conducts through a few conduction mechanisms of a seepage theory, tunnel effect, a field emission theory and a thermodynamics theory; according to different proportioning proposals, the resistivity of the surface of the paint can be adjusted; the method has a simple and feasible process, convenient construction and lower cost, can improve production efficiency and does not generate influence on the prior performances of paperboard, such as mechanical performance and obstruction performance.

The invention is a nonvolatile memory cell circuit implemented by standard CMOS process, comprising tunnel transistor, control transistor and readout transistor, where the tunnel transistor and control transistor are both connected in a MOS capacitor form, and both their grids are connected to form a floating grid. And it has a bidirectional Fowler-Nordheim tunneling effect by voltage generation at two ends of the capacitor of the tunnel transistor, thus realizing charge injection and erasion, and obtains the data in the memory cell by reading out the current of the readout transistor controlled by the floating grid.

The invention relates to a method for washing and separating crystals (such as ice crystals), which has low energy consumption and small investment, and ensures high purity of the crystals. The method for washing and separating the crystals comprises the following step of: carrying out mild crystallization on a washing front edge by using a melt of the crystals in a state close to the freezing point (the ice point) as washing liquid (washing water) so as to inhibit viscous fingering and tunnel effect of the washing liquid, generate a horizontal and defined washing front edge, namely piston flow, and make mother liquor in a crystal bed replaced with the washing liquid. The invention also relates to equipment for washing and separating the crystals, which is a crystallization washing columnconsisting of a vertical column body and a feeding mechanism and a cutting mechanism which are respectively arranged at both ends of the vertical column body. A mixture (crystal mush or ice slurry) of the crystals and the mother liquor is pressed into the column from one end of the column to form an isotropic crystal tight stacking bed, the mother liquor in the crystal bed is replaced with the washing liquid, and the washed pure crystals and the washing liquid are planed by the cutting mechanism at the other end of the column body so as to realize high-efficiency low energy consumption separation of the crystals and the mother liquor.

The invention discloses a method for preparing degradable waterborne polyurethane paint. The method comprises the steps that waterborne polyurethane is modified by nano titanium dioxide, wherein the water resistance, the mechanical property and the like of waterborne polyurethane can be improved through the special characters such as the surface and interface effect, the quantum size effect and the macroscopic quantum tunneling effect of the titanium dioxide particles, and meanwhile attachment of microorganisms to the surface of a coating can be effectively reduced through the antibacterial property of nano titanium dioxide; polylactic acid is connected to the surface of nano titanium dioxide, and then the waterborne polyurethane coating with the biodegradablity is prepared. According to the method, a -NCO terminal is prepared through the connection function of a toluene diisocynate functional group -NCO to be connected with a titanium dioxide-polylactic acid composite coating, the purpose of modifying waterborne polyurethane is achieved, polylactic acid is soft in main chain and can be easily catabolized by microorganisms in the natural world, a decomposition product is free of pollution, and the microorganisms attached to the surface are effectively removed; nano titanium dioxide has the excellent antibacterial and bactericidal characteristics, attachment of fouling organisms is greatly reduced, and the surface cleanliness of the coating is kept.

The invention belongs to the technical field of semiconductor photoelectric detection, and particularly relates to a tunneling photoelectric detector based on a Van der Waals heterojunction and a preparation method of the tunneling photoelectric detector. A metal type two-dimensional material is used as a carrier transport layer; an insulating type two-dimensional material is used as a barrier layer and a tunneling layer; and a semiconductor type two-dimensional material is used as a photoelectric conversion material. The device structure sequentially comprises a substrate (1), a metal type two-dimensional material layer (2), an insulating type two-dimensional material tunneling layer (3), a semiconductor type two-dimensional material light absorption layer (4) and a metal electrode (5) from bottom to top. When the device works, the insulating type two-dimensional material plays a role of the barrier layer in the dark, which improves the potential barrier to prevent electron transmission, and effectively reduces the dark current of the device; under light irradiation, bias voltage is applied to enable the insulating type two-dimensional material layer to generate a tunneling effect, a conduction step of photon-generated carriers is formed, a carrier multiplication effect is generated, and the photocurrent of the device is effectively improved. The device has the characteristicsof high response rate, high detection rate, high optical switch ratio, quick response and the like.

The invention relates to nano carbon selenium-rich composite or mixture fertilizer. The nano carbon selenium-rich composite or mixture fertilizer is prepared from nano carbon, selenium-containing low-valent salt, carbonate nitrogen fertilizer and the like. In order to increase the quantity of selenium-containing low-valent salt absorbed by crops from the soil, unsaturated fatty acid is selected as a mixing agent. In order to increase the absorption amount of the crops for the nitrogen fertilizer, an ammonium stabilizer is added. The weight of the nano carbon is controlled to be less than 100 nanometers, so that the nano carbon has a small-size effect, a large-surface-area effect and a tunnel effect. The nano carbon has a conducting and magnetizing function in the water, the conductivity can be increased by 30 to 50 percent, the ionization of ions of the selenium-containing low-valent salt can be promoted, the activation, absorption and conversion of the selenium-containing low-valent salt ions in the soil can be promoted, and food rich in organic selenium can be produced by virtue of the absorption of plant roots. For example, the selenium content of paddy rice is increased by 3.5 times, the selenium content of wheat is increased by 52 times, the selenium content of soybeans is increased by 37 times, and the selenium content of the corns is increased by 134 times.

The invention relates to a lithium-sulfur cell anode composite material and a preparation method thereof. The lithium-sulfur cell anode composite material is a shell-core structure comprising a Si-O bond-containing conducting polymer as a shell and sulfur in the shell, and the sulfur content is in a range of 10-90wt%. Through the Si-O bond having reception bag functions, the lithium-sulfur cell anode composite material has a strong capability of adsorption and release of lithium polysulfide produced by in cell charging and discharging, can effectively inhibit tunneling effects of lithium polysulfide and can improve cell cycling stability and coulombic efficiency.

The invention discloses a preparation method of a textile waterproofing agent, and belongs to the field of textile waterproofing materials. Nano-silica is modified by coupling agents, owing to small size effects and macroscopic quantum tunneling effects of the nano-silica, fiber breakage can be effectively prevented, the abrasion resistance of a serous membrane is improved, the dispersibility of the nano-silica can be improved, and mallow bark extracting solution is adsorbed by the adsorption performance of the nano-silica. As extracting solution molecules contain much -OH and enter a weave structure of a silk fabric, fibers generate good cohesiveness, and the tensile property and the ultraviolet resistance of the fabric are improved. The preparation method solves the problems of low tensile property and fiber breakage of fabrics due to the fact that waterproofing agents in the present market cannot effectively prevent water.

A device to place an incision into matter with a harmonious plasma cloud. A radiofrequency generator system produces pulsed or continuous electromagnetic waveform which is transmitted by an active transmitter incising electrode tip. This generated electromagnetic wave is utilized to initiate a plasma cloud with processes such as thermal ionization and a photoelectric effect which then trigger an Avalanche Effect for charged atomic particles at the surface of the active transmitter incising electrode tip. This electromagnetic wave is impedance matched, frequency matched, power matched and tuned to the plasma cloud in order to sustain and control a harmonious plasma cloud with reduced atomic particle turbulence and chaos. This harmonious plasma cloud forms a coating over the surface of the active transmitter electrode tip as well as acts to reduce the energy needed from the power amplifier of our plasma cutting device. The electromagnetic wave is also used to produce a Pinch Effect to compress, contour, shape and control the harmonious plasma cloud. The electromagnetic wave is furthermore used to trap and contain the plasma cloud without the need of a solid matter containment vessel according to the Magnetic Bottle Effect of physics and a generated centripetal electric field force that acts to pull plasma particles inward toward the activated incising electrode tip. The Tunnelling Effect of physical chemistry is utilized to focus and amplify the energy delivered to the harmonious plasma cloud while shielding matter surrounding the intended path of incision from potential electromagnetic radiation exposure. The invention is an efficient, effective, safe, clean and inexpensive device which can be used to place an incision in matter.

Bidimensional or three-dimensional, single-layer or multilayer nanostructure, whose electric conductivity ss in the total structure has a highly non-linear behavior due to local tunnel effect between adjacent clusters, and it can be varied at will by varying the voltage applied to the electrodes.

A magnetic device includes a substrate, a sensing block and a repair layer. The substrate has a registration layer and a barrier layer disposed on the registration layer. The sensing block is patterned to distribute on the barrier layer. The repair layer is disposed substantially on the barrier layer, wherein the barrier layer is configured to have a tunneling effect when a bias voltage exists between the sensing block and the registration layer.

The invention discloses a SONOS flash memory, a preparation method thereof, and an operation method thereof. The flash memory comprises a substrate, a source drain and a groove, wherein a tunneling oxide layer, a silicon nitride trap layer, a block oxide layer and a polysilicon control grid are positioned on the groove in order. The flash memory is characterized in: that the substrate is lightly doped silicon; and the source drain comprises different doped types consisting of a P+ region and an N+ region. Compared with the prior standard CMOS technologies, the flash memory has better compatibility. As common SONOS flash memories, the flash memory in the invention is provided with good maintenance characteristics. Meanwhile, the flash memory of the invention has an ideal small size and can effectively improve programming efficiency, reduce power consumption, and inhibit the tunneling effects.

A nanometer material refers to the material with at least one dimension located within the nanometer scale range, and the range is usually 1-100nm. The granularity of nanometer-level ultra-fine powder is also extremely low, and the number of atoms on the surface of the power and the number of atoms on the interface of the power can be compared with the number of atoms inside the power, so that the chemical property of the powder is very active and the interface effect and the surface effect are increased abnormally. The small size effect, the quantum size effect and the surface effect are all very obvious. Nanometer copper powder is not prone to oxidization, and in a copper catalytic system and a copper conductive system, the catalytic performance and the conductive performance can be greatly enhanced due to the performance of the copper powder in the aspect of oxidization. Due to the quantum size effect of the nanometer material and the macroscopic quantum tunneling effect of the nanometer material, when the nanometer copper powder is dispersed in a plurality of mediums, abnormal strong catalytic and conductive performances are shown, and important applications can be developed. The specific surface area of the nanometer copper powder is large, surface active centers are many, and therefore the nanometer copper powder is a good catalyst in metallurgy and petroleum chemical industries.

The invention provides a nonvolatile storage cell array operating method, applied to operating NAND storage cell array, where each storage cell has a charge immersing layer. When operating the array, it uses F-N tunneling effect to erase the whole storage cell array and uses thermal electric hole-injecting effect to code a single bit in a single storage cell. With the F-N tunneling effect, its electron injecting efficiency is high, thus able to reduce the current of the storage cell when erasing and at the same time enhance operating speed. Moreover, the current consumption is low, able to effectively reduce the power loss of the whole chip.

The invention relates to a cluster wind tunnel power tower which is a wind power generation device. According to the device, a static wind area is expanded to form a wind dam to lead natural wind to be clustered into wind tunnel airflow which ascends vertically through the narrow tunnel effect, and kinetic energy of the ascending airflow is accelerated through the chimney tube effect to drive a generator to rotate. The cluster wind tunnel power tower is arranged on the end of a bucket barrel of a cluster dam by a power tower base, and is in a shape of a tower integrally. The power tower is integrated by important components, such as a turbine wheel, a generator, a turbofan centrifugal wheel, a machine barrel and an automatic wind adjusting valve, and the cluster dam is integrated by important components, such as the bucket barrel, a chimney tube, a floating plate and a set wind wall. In a figure, 1 is the turbine wheel, 2 is the generator, 3 is the turbofan centrifugal wheel, 4 is the machine barrel, 5 is the automatic wind adjusting valve, 6 is the bucket barrel, 7 is the chimney tube, 8 is the floating plate, 9 is the set wind wall, 10 is a supporting cylinder, and 11 is a basal body.

The invention provides a low-melting glass powder of crystalline silicon solar energy battery front side silver paste, and the powder is processed from the following substances in percentage by weight: 30-60% of PbO, 10-30% of B2O3, 5-30% of ZnO, 5-14% of SiO2, 0.5-2% of Li2O, 0.5-2% of Ag2O, 1-5% of MgO and 1-10% of ZrO. The preparation method comprises the following steps: 1. weighing materials, and uniformly mixing the materials in a ceramic mortar; 2. pouring the mixed powder into a corundum crucible, covering the crucible with a cover, and placing the crucible into a muffle furnace for fusion at an assigned furnace temperature; 3. carrying out water quenching of the fused glass liquid; 4. carrying out a drying; 5. milling and crushing the glass material after water quenching. The prepared glass powder has a suitable softening temperature, and has a good wetting capability for silver and silicon, simultaneously the glass contains silver oxide, and thereby better conveying and precipitating silver crystal grains in the sintering process, obtaining more contact points, improving the generation probability of tunnel effect, and reducing the contact resistor. Because the lead content is low, corrosion to silicon is reduced and possibility for breakdown of PN junction is effectively decreased, and thereby improving photoelectric conversion efficiency and life of solar energy battery in the prerequisite for guarantying the contact resistor.

The present invention provides a DC / DC communication switch power supply including an EMC restraint loop, a self-start control loop, a +5 voltage main switch loop, a +5 voltage PWM loop, a -5 voltage regulation filtering loop, a +5 voltage filtering loop, a +5 voltage feedback loop, an auxiliary power supply, a protection loop, a -42 voltage PWM loop, a -42 voltage feedback loop, a -42 voltage switch loop and a -42 voltage filtering loop which are positioned on the printed plate; the +5 voltage PWM loop and the -42 voltage PWM loop adopt the automatic control DC / DC converting circuit of the single-terminal normal-shock PWM integrated circuit chip. Said printed plate adopts copper foil lead having a thickness of 0.7MM, and more than 90% of the whole board is covered with the copper foil. Each circuit includes a switch transformer and the heating elements including MOS tube are all positioned on the top of the printed plate; the radiators and transformers of each circuit are distributed in parallel with gap therebetween to generate air flow tunnel effect. The DC / DC communication switch power supply has a high transforming efficiency and a low heat self-productivity.

The invention discloses a solar cell taking a fluorinated graphene film as a high-resistance layer. In the solar cell, the cell structure successively comprises a metal film layer as a back electrode, a back contact layer, an absorbing layer, a window layer, a fluorinated graphene high-resistance layer and a transparent conductive film layer from bottom to top. A fluorinated graphene film the thickness of which is 0.34nm to 20nm replaces a native oxide and is taken as the novel high-resistance layer, atom diffusion between different films can be reduced, the interface property is improved, a cell short circuit caused by a pinhole effect of the window layer film can be prevented, and cell efficiency is further improved. Compared with a traditional high-resistance layer, the thinner fluorinated graphene film is more conductive to a tunneling effect of electrons and transfer and collection of the electrons.

The invention discloses a laser sound conducting method and device, belonging to the technical field of photoelectricity. The invention, based on intra-cavity laser enhancement technique and an optical tunnelling effect, provides a laser sound conducting method and device, wherein the device mainly comprises a high reflectivity mirror, a total reflection prism, a optical gain medium and a pumping source, a flexible deformation body, an photoelectric detector and a signal processing circuit. The method and the device have the advantages of high sensitivity, stable performance and strong environmental adaptability, are expected to be widely applied to the field of traditional sound conducting devices and other fields needing high-sensitivity sound wave measurement.

The present invention relates to a color filter capable of preventing production of current tunneling effect. It is characterized by that its main structure includes a transmission base plate; a black matrix placed on particle upper surface of said black matrix; several color light barries which are fixedly placed on the transmission base plate surface on which the black material is not placed and at least an isolating channel is cut on the black matrix which is not covered with said color light barrier; and a protective layer for covering the periphery of said black materix and said color light barrier.