Film forming method, film forming device and storage medium

Abstract

The present invention provides a film forming method for controlling holocrystalline hemispheric granule in small size by a combination etching treatment. The film forming method of a film formed on surface of the treated object W comprises a host crystal formed on the surface of the treated object by film forming gas, the host crystal grows, the HSG film forming process one the surface of the HSG film formed by holocrystalline hemispheric granule is formed; a hemispherical grained (HSG) film is oxidized to form an oxidized layer at the surface part of the HSG film, and then the oxidized layer is etched to be removed. Thus, the film forming method controls the holocrystalline hemispheric granule in small size by a combination etching treatment.

Description

technical field [0001] The present invention relates to a film-forming method, a film-forming device, and a storage medium for forming a hemispherical grained film suitable for use as an electrode of a capacitor, and particularly relates to a technique for reducing the size of hemispherical grains of the HSG film. Background technique [0002] Generally, in order to form a semiconductor integrated circuit such as an IC, desired transistor elements are densely integrated on the surface of a semiconductor wafer, a glass substrate, etc. by repeatedly performing film formation, etching, thermal diffusion, oxidation, etc. , Resistive elements, capacitors, etc. In recent years, especially along with the high integration of semiconductor devices, the miniaturization of each element itself has been progressing. For example, in memory devices such as DRAM, as the area occupied by each unit becomes smaller, the area occupied by each cell becomes smaller and smaller. In order to ensur...

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Problems solved by technology

For example, when the diameter H1 of the annular portion of the lower electrode 4 is set at, for example, about 100 nm due to further miniaturization, or when the arrangement density of the hemispherical particles 6 is increased, the diameter D1 of the particles 6 is too large, and as a result In the subsequent process, poor step coverage of the capacity insulating film and short circuit between the lower electrodes may occur, making it impossible to make a suitable capacitor.

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