Semiconductor device and open structure of semiconductor device

Abstract

The present invention provides a semiconductor device and an open structure of the semiconductor device, in particular to an opening structure in a semiconductor device with improved step coverage. The opening structure comprises a dielectric layer overlying a substrate and having at least one via opening to expose the substrate. Wherein the via opening comprises a step region in the upper portion of the via opening and a concave profile region with respect to the dielectric layer in the lower portion of the via opening. The semiconductor device and the open structure of the semiconductor device of the present invention is capable of improving the percentage of coverage of the metal step and further improving the reliability of the device.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly to a via opening structure of a semiconductor device, which has a low aspect ratio (aspectratio) and is better for barrier layer deposition. The step coverage (stepcoverage). Background technique [0002] In the manufacture of semiconductor integrated circuits, the fabrication of contact windows is used to electrically connect active regions or conductive layers in the semiconductor substrate. The semiconductor substrate has a metal interconnection layer formed on a dielectric layer, and the dielectric layer is interposed between the substrate and the interconnection layer. In the manufacture of contact windows, contact openings or via openings are usually formed in the dielectric layer to expose the active area or conductive layer, and a conductive plug is filled in it as a layer from the active area or conductive layer to the interconnection layer conduction path between...

AI Technical Summary

Problems solved by technology

[0003] With the development of high-density integrated circuit technology, more components need to be placed on a chip to increase the complexity of the process, while increasing the density and aspect ratio of contact windows

The increase in circuit density also results in an increase in the aspect ratio of contact openings or via openings

However, higher aspect ratios have a negative impact on manufacturing yield because contact openings or via openings need to have better metal step coverage to provide reliable electrical contact

That is, as the aspect ratio increases, the deposition of the barrier layer cannot provide better step coverage due to necking at the top of the contact opening or via opening.

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