20 results about "Tantalum capacitor" patented technology

The invention relates to a chip solid capacitor and a coating process thereof, the chip solid tantalum capacitor is composed of a tantalum block, a dielectric oxide layer, a cathode layer, a transition layer, a silver layer and a plastic package layer, the cathode layer is a manganese dioxide layer, and the manganese dioxide layer is formed by thermal decomposition on the tantalum block on which the dielectric oxide layer grows through the coating process; the specific operation of the coating process is specifically limited, and the tantalum block is sequentially impregnated with thin-thick-thick-thin coating liquid, so that the prepared cathode layer is high in density, high in interlayer binding force and free of bubbling and delamination defects, the qualification rate and the moisture resistance of the product are greatly improved, meanwhile, parameters of all stages are controllable and adjustable, and the production cost is reduced. And the production requirements of high-specific-volume tantalum capacitors with different specific volume grades can be met, and the method has a good industrial application prospect.

The present application belongs to the technical field of tantalum capacitor cathode current lead-out layer, and relates to a composite coating on a tantalum surface and a preparation method thereof, which comprises a base carbon layer, a porous carbon layer and a silver layer, and comprises the following steps: uniformly mixing a solvent, MMA and an initiator, defoaming to obtain a base carbon paste, coating the base carbon paste on the surface of a tantalum core, and solidifying to obtain the base carbon layer; uniformly mixing a solvent, MMA, polyethylene glycol-1500, a carbon conductive agent and an initiator, defoaming to obtain a pore-forming carbon paste, coating the pore-forming carbon paste on the base carbon layer, solidifying and pore-forming to form the porous carbon layer; uniformly mixing bisphenol A epoxy resin, a curing agent, a curing catalyst, a solvent and a silver conductive agent, defoaming to obtain a silver paste, coating the silver paste on the porous carbon layer, and solidifying to obtain the silver layer, thereby obtaining the composite coating; the composite coating can reduce the resistance value, and in turn, the ESR value of the tantalum capacitor.

This invention discloses a cap-type tantalum capacitor packaging process and the cap-type tantalum capacitor itself. The packaging process includes the following steps: S1: tantalum core bonding; S2: moisture-proof treatment; S3: encapsulation; S4: overflow treatment; S5: cathode lead-out; S6: anode lead-out; S7: end treatment. The tantalum capacitor is manufactured using the cap-type tantalum capacitor packaging process. The tantalum capacitor has a dual-core parallel structure, including two tantalum cores with tantalum wires inserted inside. A bonding silver paste is placed between the two tantalum cores. An anode lead-out is located at the top of each tantalum core, and a cathode lead-out is located at the bottom. Resin is placed between the two tantalum cores and the anode lead-out. A graphite layer is placed on the bottom and four sides of each tantalum core. This invention uses vibration-induced silver paste impregnation instead of traditional manual coating and bonding. Vibration ensures the silver paste fully fills the gaps between the two cores, completely eliminating defects such as pits and bubbles caused by manual operation, resulting in a smooth and flawless outer surface of the dual cores. This invention solves the problem of bulging and cracking of the encapsulation layer by constructing a pre-existing moisture barrier.

The utility model application discloses a kind of tantalum capacitor and to be welded piece welding production line, belong to tantalum capacitor welding assembly field, tantalum capacitor and to be welded piece welding production line includes: acquisition station, obtains multiple tantalum capacitor core body with tantalum wire;Conveying station, multiple tantalum capacitor core body with tantalum wire is conveyed to place respective tantalum wire on to be welded piece;Or, multiple pre-assembled tantalum capacitor core body is conveyed to to be welded piece, pre-assembled capacitor core body includes;Tantalum capacitor core body with tantalum wire and pad block, pad block connects the tantalum wire of tantalum capacitor core body;Welding station, the tantalum wire of multiple tantalum capacitor core body and to be welded piece are welded;Or, multiple pre-assembled tantalum capacitor core body and to be welded piece are welded.The utility model application can improve tantalum capacitor and to be welded piece welding speed, reduce the manufacturing cost of tantalum capacitor assembly.

A tantalum capacitor including a capacitor body including a tantalum body including a tantalum wire exposed on one side and a capsule portion configured to surround the tantalum body so that an end of the tantalum wire is exposed; a first metal layer on one side of the capacitor body and a second metal layer on one side of the first metal layer; and an external electrode connected to the first metal layer, wherein the first metal layer includes Cr (chromium), Ti (titanium), an alloy thereof, or a mixture thereof, and the second metal layer includes Ni (nickel), an alloy including the same, or a mixture including the same.

This invention relates to the field of capacitor manufacturing technology, and more particularly to a device and method for agglomerating and granulating tantalum powder. The device comprises a frame assembly, a container assembly, a spraying assembly, and a planetary stirring assembly. The container assembly is installed at the bottom of the frame assembly. The spraying assembly is installed on the container assembly with its spraying end facing the inside of the container assembly. The planetary stirring assembly includes a drive motor, a stirring shaft, a first blade, and a second blade. The drive motor is installed at the top of the frame assembly, and the driving stirring shaft extends obliquely into the container assembly. The first blade and the second blade are located at the end of the stirring shaft, and their rotation planes are parallel and both form a predetermined angle with the axis of the stirring shaft. Thus, by uniformly atomizing the binder through the spraying assembly, and combined with the multidimensional shearing and tumbling effect generated by the planetary stirring assembly, the tantalum powder and the binder are fully mixed in three-dimensional space, thereby improving the uniformity and flowability of the agglomerated tantalum powder, and thus improving the uniformity of the anode blank and the electrical performance of the tantalum capacitor.

The application provides a preparation method of a tantalum capacitor electrode, the tantalum capacitor comprising a capacitor element, a positive internal connecting piece, a negative internal connecting piece and a packaging body covering the above components, the preparation method comprising the following steps: polishing the end face of the packaging body exposed with the positive internal connecting piece and the negative internal connecting piece to make the roughness Ra of the end face reach 0.8-3.2 μm to increase the surface friction; uniformly coating the end face of the polished packaging body with conductive paste with a thickness of 5-20 μm, wherein the conductive paste comprises a mixture of metal conductive filler and resin binder; drying the packaging body coated with the conductive paste in an environment with a temperature of 80-150 ℃ to make the conductive paste completely solidify and tightly combine with the end face of the packaging body; and placing the solidified packaging body as a cathode into an electroplating solution containing electrode material to electrochemically deposit, thereby forming an outer electrode layer, wherein the outer electrode layer is electrically connected with the end face of the positive internal connecting piece and the negative internal connecting piece.

This invention discloses a method for preparing low-oxygen, high-specific-capacitance tantalum powder for tantalum capacitors, addressing the problems commonly found in existing magnesothermic reduction methods for tantalum powder preparation, such as high oxygen content, difficulty in suppressing the byproduct magnesium tantalate, and poor powder particle uniformity leading to low specific capacitance, high leakage current, and poor electrical performance. This method involves uniformly coating a completely removable soluble additive onto the surface of porous spherical tantalum oxide particles. After drying, these particles are mixed with alkali metal halides and a single-phase addition of metallic magnesium powder. A gradient-temperature reduction process is employed: in the intermediate temperature stage, the additive decomposes to construct a porous framework and initiates initial reduction; in the high-temperature stage, deep reduction is completed. A molten salt medium synergistically regulates the heat of reaction and mass transfer, completely suppressing the formation of magnesium tantalate. The product, after post-treatment, yields tantalum powder with an oxygen content ≤2500 ppm, a specific capacitance ≥110000 μFV / g, and a uniform coral-like porous structure. This method offers a clean and highly controllable process, resulting in high-purity tantalum powder with excellent electrical properties, making it suitable for high-end tantalum electrolytic capacitors.

With this invention, electronic circuit components such as transistors, diodes, zener diodes and varicap diodes, which are conventionally manufactured with semiconductors, can be produced without semiconductors by means of a much simpler and cheaper technology, and by the same technology a compensation capacitor can be manufactured whose capacitance is automatically varied so as to follow changes in the load simultaneously. This principle may also be applied in other areas such as microwaves. In simple terms, the electric and magnetic fields of the main capacitor are blocked by a control voltage and varied between zero and maximum values, and as a result the capacitance of the main capacitor is changed. The fundamental principle here is the control of the electric and magnetic fields between the two conductive plates of a fixed-capacitance capacitor. For this purpose, a control voltage is applied between a third metallic plate, designed as a grid or similar structure so as not to block the electric and magnetic fields of the main capacitor and placed closer to one of the two plates, and the adjacent metallic plate, while a DC voltage (VDD) of suitable value for the circuit is applied across the terminals of the main capacitor. In a slightly different version, two grids are provided so that the structure can be used both as a diode and as a transistor. In both cases, the capacitance value of the main capacitor varies depending on the control voltage, i.e. Co = f(Vi). This means that, similar to classical transistors, the impedance of the circuit varies depending on the control voltage. In this structure, which exhibits behaviour similar to FET transistors, the output voltage is taken across the two outer plates of the capacitor with a design similar to a classical transistor circuit. In the production stage, the dielectric will be formed by coating very thin special plastic or other suitable materials with an appropriate metal of suitable thickness for the design and winding it in roll form. Likewise, dielectric layers may also be formed as very thin oxide or other non-conductive chemical compounds on the surfaces of the metallic 24 plates. That is, use will be made of conventional capacitor technologies such as ceramic, tantalum and electrolytic capacitors. In addition, different methods may be developed depending on the field of application. These designs will find application areas as semiconductor-free transistors, diodes, voltage-controlled variable capacitors, and many other uses, some of which have been explained in this project.

A tantalum capacitor according to an embodiment of the present disclosure includes: a tantalum body; a tantalum wire that is connected to the tantalum body; a conductive polymer layer that is disposed on the tantalum body; and a first reinforcing layer that is disposed on the conductive polymer layer and includes carbon nanotube doped with iron (Fe).

This application provides a tantalum capacitor comprising: a capacitor element; a positive inner connector; a negative inner connector; a package, wherein the end faces of the positive and negative inner connectors are exposed at the end faces of the package; and an external electrode connected to the positive and negative inner connectors. A method for manufacturing the above-mentioned tantalum capacitor includes: connecting the anode lead of the capacitor element to a positive lead frame containing the positive inner connector; connecting the cathode layer of the capacitor element to a negative lead frame containing the negative inner connector; encapsulating the capacitor element, the positive inner connector, and the negative inner connector with an encapsulating material to form an encapsulation strip; removing excess material from both sides of the positive and negative lead frames of the encapsulation strip, exposing the positive and negative inner connectors at the end faces of the encapsulation strip; and forming an external electrode at the end faces of the encapsulation strip by electrochemical deposition, thereby connecting the positive and negative inner connectors to their respective external electrodes.

This utility model discloses a tantalum capacitor shell encapsulation structure with strong corrosion resistance, relating to the field of tantalum capacitor technology. It includes an outer sheath and a buffer assembly. An end cap is connected to the end of the outer sheath, and an inner retaining ring is installed on the inner wall of the end cap. The buffer assembly, used for external buffering and damage prevention, is located inside the outer sheath and includes an outer rubber strip, a buffer rod, an inner rubber strip, and an outer rubber strip. The buffer rod is connected to the surface of the outer rubber strip, and the inner rubber strip is connected to the end of the buffer rod. The outer rubber strip is connected to the side of the inner rubber strip. This tantalum capacitor shell encapsulation structure with strong corrosion resistance provides direct external force protection through the outer sheath outside the tin layer seal, preventing leakage of capacitor fluid due to tin layer damage and increasing corrosion resistance. The rubber outer rubber strip, inner rubber strip, and outer rubber strip are deformed by themselves when the outer sheath is subjected to external force, thus buffering the external force.

The present application belongs to the technical field of tantalum capacitor cathode current lead-out layer, and relates to a composite coating on a tantalum surface and a preparation method thereof, which comprises a base carbon layer, a porous carbon layer and a silver layer, and comprises the following steps: uniformly mixing a solvent, MMA and an initiator, defoaming to obtain a base carbon paste, coating the base carbon paste on the surface of a tantalum core, and solidifying to obtain the base carbon layer; uniformly mixing a solvent, MMA, polyethylene glycol-1500, a carbon conductive agent and an initiator, defoaming to obtain a pore-forming carbon paste, coating the pore-forming carbon paste on the base carbon layer, solidifying and pore-forming to form the porous carbon layer; uniformly mixing bisphenol A epoxy resin, a curing agent, a curing catalyst, a solvent and a silver conductive agent, defoaming to obtain a silver paste, coating the silver paste on the porous carbon layer, and solidifying to obtain the silver layer, thereby obtaining the composite coating; the composite coating can reduce the resistance value, and in turn, the ESR value of the tantalum capacitor.

The application discloses a manufacturing method of a conductive polymer electrolyte chip tantalum capacitor. In the manufacturing process of the conductive polymer electrolyte chip tantalum capacitor, the method comprises polymerization, graphite silver paste immersion, laser stripping and core aging. The core aging process of the conductive polymer electrolyte chip tantalum capacitor is improved. The core aging adopts a two-stage constant voltage process. In the first stage, a lower voltage and a higher current limit condition is adopted to quickly remove the cores with serious dielectric defects; in the second stage, a voltage higher than that in the first stage and a current lower than that in the first stage are adopted to repair the dielectric oxide film and further screen the products meeting the voltage resistance requirement. By setting different voltage, current and voltage rising rate parameters in different stages, the method effectively avoids the damage of the surge current caused by the product breakdown in the traditional one-stage aging, thereby significantly improving the qualified rate and production efficiency of the core aging of the high-voltage chip tantalum capacitor.

The present application provides a tantalum capacitor manufacturing method, comprising the following steps: preparing a tantalum block; generating a dielectric oxide film on the surface of the tantalum block by acid solution immersion; mixing mucilage and a salt compound to prepare an electrolyte, and generating a tantalum pentoxide film on the surface of the tantalum block by electrochemical reaction; coating a cathode on the surface of the tantalum block to prepare a tantalum capacitor. The technical scheme of the present application generates a tantalum pentoxide film by electrochemical reaction, so that the thickness and compactness of the tantalum pentoxide film can be easily controlled, and the voltage resistance of the tantalum capacitor is maximally improved; the mixed solution of high-viscosity mucilage and a salt compound is used as the electrolyte, which prevents the tantalum block core material from being affected during the electrochemical reaction process, ensures the compactness of the tantalum pentoxide film, prevents the capacity of the tantalum capacitor from decreasing, and significantly improves the film generation efficiency of the tantalum pentoxide film, so that the thickness of the generated tantalum pentoxide film is thicker within the same electrochemical reaction time, and the voltage resistance of the tantalum capacitor is significantly improved.

The application discloses a kind of high-temperature high-humidity environment solid electrolyte tantalum capacitor and preparation method, including tantalum anode (1) and the medium layer (2) successively coated in tantalum anode (1) outside, solid electrolyte layer (3), graphite silver paste layer (4) and epoxy shell (7);Its characterized in that, the medium layer (2), solid electrolyte layer (3) or graphite silver paste layer (4) one layer, two layers or three layers outer coating moisture-proof layer (5). Increase moisture-proof layer, can completely isolate the water vapor invasion in external environment, greatly reduce the failure rate of tantalum capacitor in high-temperature high-humidity working environment, improve reliability.Can solve the application range of tantalum capacitor under high-temperature high-humidity environment, can maintain the excellent electrical performance of tantalum capacitor.

The utility model discloses a kind of patch tantalum capacitor packaging mould, including mould frame, the cylinder is fixedly installed on the mould frame, and the output shaft of cylinder is fixed in the bottom of clamping plate with screw joint, the surface of clamping plate is evenly installed with multiple groups of lower mould simultaneously, and the surface of clamping plate is installed with linkage plate, multiple groups of upper mould are evenly installed on linkage plate, and the bottom of both ends of linkage plate is installed with support rod, and the bottom of support rod is fixedly installed in the end surface of mould frame simultaneously.The patch tantalum capacitor packaging mould, a plurality of tantalum capacitors needing to be packaged can be formed by mould once, a large number of products can be packaged within the same time;It can effectively improve production speed, meet the demand of mass production;Utilize mould once forming to give full play to the function of packaging equipment;Equipment can handle multiple tantalum capacitors in one packaging process, reduce the number of times of frequent start and stop of equipment;Greatly reduce the time of entire production process.

This utility model discloses a fully sealed surface-mount tantalum capacitor, comprising a shell, a core, and a cover plate. One side of the shell is connected to the cover plate. A positive and negative lead are provided on the outer wall of the shell. The core is disposed inside the shell and connected to the inner wall of the shell through a conductive layer. An anode wire is provided on the core, with one end connected to a lead wire. The lead wire passes through the cover plate and connects to the positive lead. This capacitor employs a metal shell encapsulation structure, improving the capacitor's hermeticity and enabling it to maintain good performance even in harsh environments such as high temperature and high humidity. The connection point between the tantalum wire lead wire and the anode wire is flattened to increase the contact area and enhance welding strength. Furthermore, the welding point is located inside the metal shell, increasing the reliability of the connection. The metal shell is covered with a first insulating layer, followed by a third and fourth insulating layers, providing double-layer insulation protection and improving reliability.

The utility model relates to surface mounting process technical field especially is a kind of reflow soldering machine splint positioning device, including reflow soldering machine ontology, the top of reflow soldering machine ontology is fixedly arranged with the transmission channel for transmission PCB board, the top of transmission channel is fixedly connected with heating bin, the heating bin is used to realize the welding processing of tantalum capacitor, transmission channel's inner wall is provided with transmission chain ontology, the top of transmission chain ontology is fixedly arranged with several limit protrusions at equal intervals, the top of limit protrusion is provided with clamping assembly. The device can be placed fixed PCB board quickly without stopping equipment by the setting of independent first frame and second frame, cooperation limit protrusion, without stopping equipment operation, and by the setting of coating layer, whether extruding block is rotated and adhered on PCB board can be observed by auxiliary staff.

The application discloses a high specific capacity chip tantalum capacitor and a preparation method thereof, and belongs to the technical field of capacitor preparation. Mainly comprising: a gradient porous tantalum anode, a composite interface oxide film, a composite solid electrolyte layer, a multilayer shielding cathode and a synergistic packaging layer. By constructing the integrated synergistic system of the gradient porous tantalum anode, the composite interface oxide film, the composite solid electrolyte layer, the multilayer shielding cathode and the synergistic packaging layer, the technical bottleneck that the specific capacity and performance of the chip tantalum capacitor are difficult to balance is broken. The three-stage particle size design and in-situ doping modification of the gradient porous anode realize the balance of porosity and mechanical strength. The synergistic application of pulse oxidation and ALD composite modification film effectively reduces the interface defects.