112 results about "Tantalum capacitor" patented technology

A lightweight compact combined tantalum capacitor comprises a housing with an accommodating cavity formed inside, a packaging cover used for sealing the accommodating cavity, a plurality of single tantalum capacitors arranged in the accommodating cavity, and a fixing mechanism arranged between the packaging cover and the housing. The shell further comprises a plurality of placing grooves which are arranged at the bottom of the accommodating cavity at intervals and are used for placing a plurality of single tantalum capacitors, and two lead holes which are oppositely arranged on the side wall of the accommodating cavity and extend outwards; by limiting the structure of the combined tantalum capacitor, the combined tantalum capacitor structure which is attractive in appearance, compact in space and easy, convenient and rapid to assemble is obtained, meanwhile, the electrical gaps and insulativity between the end faces of the multiple single tantalum capacitors can be guaranteed, the product weight is reduced, the multiple single tantalum capacitors are stably installed, and overall installation is facilitated.

A broadband filter plate type tantalum capacitor comprises a lead frame, a tantalum core and a ceramic capacitor, a positive electrode and a negative electrode of the tantalum core are connected with a positive electrode frame and a negative electrode frame of the lead frame respectively, the positive electrode frame and the negative electrode frame are connected through the ceramic capacitor, and the tantalum core and the ceramic capacitor are of a parallel structure. According to the utility model, through the design of the lead frame and the parallel combination mode of the ceramic capacitor and the tantalum capacitor, the volume efficiency maximization of the tantalum capacitor and the volume maximization of the tantalum core are realized, the reliability and the stability of the tantalum capacitor are improved, the use is simple, and the effect is obvious.

The invention discloses a method for improving the voltage endurance capability of a chip tantalum capacitor, and belongs to the technical field of capacitor manufacturing, and the method comprises the steps: enabling an anode tantalum block formed through a powder metallurgy method to generate a dielectric oxide film in an acid solution, then placing the anode tantalum block in sputtering coating equipment, introducing oxygen, taking tantalum as a target material, and carrying out sputtering coating on the anode tantalum block; a layer of tantalum pentoxide film is generated on the surface; and finally, the chip tantalum capacitor is formed by coating a manganese dioxide or polymer cathode. The invention relates to a method for improving the voltage endurance capability of a chip-type tantalum capacitor, which plays a role in improving the reliability of the chip-type tantalum capacitor.

The invention relates to the technical field of preparation of tantalum capacitor cathode plates, in particular to a preparation device and method of a high-performance tantalum electrolytic capacitor cathode plate, and mainly comprises a support, impregnation spin-drying rollers are symmetrically arranged on the support, and a first conveying belt and a second conveying belt are respectively arranged between the impregnation spin-drying rollers. Tantalum capacitor workpieces are placed on the first conveying belt and the second conveying belt, synchronous rods in the separation mechanism are distributed in a high-low staggered mode, the synchronous rods on the two sides of the tantalum capacitor workpieces ascend and descend in a staggered mode, and the tantalum capacitor workpieces are effectively separated in a reciprocating mode. And the position of the moving block is adjusted through a bidirectional lead screw in the adjusting mechanism, so that cylindrical tantalum capacitor workpieces of different models are adapted.

According to the preparation method of the solid tantalum capacitor, the solid tantalum capacitor is composed of a tantalum block, a medium oxide layer with gradient thickness, a cathode layer, a transition layer, a silver layer and a plastic packaging layer, and the thickness of the medium oxide layer is in gradient nonlinear decrease from the outer surface of the tantalum block to the body center of the tantalum block; the preparation method of the solid tantalum capacitor comprises the following steps of pressing and sintering, energizing, heat treatment, complementary forming, coating, graphite silver paste, plastic packaging and multiple times of aging. The environment of the aging process is as follows: the relative humidity is 60-90%, the aging temperature is 60-125 DEG C, and the aging voltage is 0.6-1.5 times of rated voltage; according to the method, secondary energizing and multiple humidifying and aging processes are matched, so that the thickness of the dielectric oxide layer of the solid tantalum capacitor has the structural characteristic of gradually reducing from outside to inside, the capacity contribution degree has the trend of gradually increasing from outside to inside, the short-plate effect of the external dielectric oxide layer is supplemented, and the performance of the solid tantalum capacitor is improved. Therefore, the overall voltage endurance capability of the tantalum capacitor is improved, and the capacity of the tantalum capacitor is not sacrificed.

The invention provides a tantalum capacitor dielectric layer gradient oxidation preparation method and an oxidation film and an anode block thereof, and the method employs a multi-stage gradient boost rate to carry out electrochemical oxidation on a tantalum anode, and controls the boost rate and the oxidation voltage at different stages. And the oxide film forms a grain size gradient structure from the compact layer at the bottom to the nanocrystalline layer at the top, and the film thickness is 400-900 nm. Meanwhile, an electrolyte formula is optimized, ammonium dihydrogen phosphate and cerous nitrate are added into a phosphoric acid solution, the compactness of the film is improved, and oxygen vacancies are inhibited; ozone bubbling treatment is introduced in the constant-pressure stage, and the defect concentration is further reduced. The prepared dielectric layer has high breakdown voltage, low leakage current and high specific capacitance performance, the reliability of the tantalum capacitor is remarkably improved, the service life of the tantalum capacitor is remarkably prolonged, and the dielectric layer is suitable for high-reliability electronic equipment.

The application belongs to the technical field of conductive connection, and discloses a tantalum capacitor electrode connection structure, which comprises a tantalum capacitor connecting seat assembly and a tantalum capacitor assembly. The inside bottom end of the tantalum capacitor connecting seat assembly is provided with a conductive transposition assembly, and the inside top end of the tantalum capacitor connecting seat assembly is provided with a first transposition driving assembly and a second transposition driving assembly. The conductive positive electrode and the conductive negative electrode are optimized and improved, and the movable conductive connection is realized. Moreover, the long and short pins of the tantalum capacitor assembly are inserted in sequence with the conductive positive electrode and the conductive negative electrode. No matter whether the long and short pins are inserted in the positive direction or the reverse direction, the structure linkage is adopted, so that the long and short pins of the tantalum capacitor assembly are always in one-to-one positive direction with the conductive positive electrode and the conductive negative electrode, that is, the error-avoiding conductive connection is realized. When the tantalum capacitor assembly is disassembled, the arc-shaped reset spring is pushed and reset, and the tantalum capacitor assembly forms the electrode power-off action of self-ejection on the tantalum capacitor connecting seat assembly.

The invention relates to a tantalum capacitor leakage current detection circuit, which is characterized in that a first divider resistor is connected to a protection resistor in parallel, and a divider signal of the protection resistor is compared with a set reference voltage, so that the continuity check of the detection circuit is realized; a protective resistor voltage division signal is used as a reference voltage to be compared with an input voltage voltage division signal of the numerical control power supply to realize over-current detection protection; the two functions together, so that the tantalum capacitor leakage current detection is suitable for high charging voltage, and the test fixture is prevented from being damaged due to short circuit caused by failure of the protection resistor or incorrect polarity connection or explosion of the unconnected tantalum capacitor.

The present application relates to patch tantalum capacitor detection screening device and screening method, the device includes base, four-axis articulated arm, material box, camera group, device turnover device and clamping assembly, device turnover device includes long and short side tooling position, clamping assembly includes respectively with a, b jaw piece connected a, b clamping arm, a jaw piece and b jaw piece structure symmetry and opposite arrangement, a, b jaw piece forms test station between. The method includes steps such as boxing, detecting front-up device, detecting back-up device, detecting long-side-up device and detecting short-side-up device, each detection step includes identification, suction, direct or after adjustment and sending to test station. The present application is simple in structure, convenient in operation, the method of classification screening simplifies the complex situation, so as to realize the rapid detection of large quantities of patch tantalum capacitor, not only greatly improve the work efficiency, also effectively reduce the labor intensity of operating personnel.

The utility model discloses a tantalum capacitor surge test tool, and aims to solve the problem that a test tool in the prior art cannot bear a tantalum capacitor surge test. The test tool comprises a PCB, a test clamping piece group and a banana head. The test clamping pieces are fixed through screws, replacement is convenient and fast, the shape of the test clamping piece set can adapt to the shape of the tantalum capacitor, it is ensured that the capacitor can be stably fixed in the test clamping pieces in the test process, and the situation that the test result is affected due to looseness is avoided. The first test clamping piece and the second test clamping piece are made of nickel-plated phosphorus copper alloy, and the alloy has the excellent characteristics of pollution resistance, high temperature resistance and difficulty in deformation, can stably work in a tantalum capacitor surge test environment with high requirements, and can bear the impact caused by capacitor explosion, so that the reliability and the safety of the test tool are greatly improved.

The utility model discloses a capacitor using a welding type square anode cover plate, comprising a housing, a tantalum core, an insulation assembly and a cover plate, the tantalum core and the insulation assembly are arranged in the housing, the insulation assembly is respectively connected with the tantalum core and the cover plate, the tantalum core is provided with an anode leading-out terminal, the cover plate is respectively connected with the insulation assembly and the housing, and the anode leading-out terminal is provided with a cathode leading-out terminal. A connecting piece is arranged on the cover plate. The welding contact position of the cover plate anode and the tantalum wire is designed to be the square tantalum rod, point-to-point contact between the tantalum wire and the cover plate anode is optimized into point-to-face contact, the welding efficiency and the welding quality are improved under the condition that the welding strength of electric resistance welding is guaranteed, the resistance value of a contact resistor R is improved, and the welding quality is improved. And the welding pressure between the electrodes is greatly reduced, so that the mechanical stress impact borne by the glass insulator in the electric resistance welding process is reduced, and the high-energy hybrid tantalum capacitor with excellent electrical performance, high welding strength and high reliability is obtained.

The invention discloses a preparation method of a high-reliability high-voltage non-solid tantalum capacitor. The preparation method specifically comprises the following steps: step 1, preparing an electrolyte A and an electrolyte B; step 2, assembling and welding a tantalum shell, a tantalum cover, a tantalum core, a polytetrafluoroethylene diaphragm, a gasket, a diaphragm and a ruthenium oxide sheet, and injecting an electrolyte A to fill the residual space in the whole tantalum block; 3, opening aging is carried out on the capacitor at normal temperature, aging gas is pumped out, the electrolyte A is supplemented to fill the capacitor again, then the capacitor is transferred to a drying oven, opening aging is carried out at high temperature, and aging gas is pumped out; 4, putting the capacitor into a drying oven, discharging free electrolyte in the capacitor through heating, taking out the capacitor, naturally cooling to room temperature, injecting electrolyte B, and welding a liquid injection port; and step 5, carrying out high and low temperature performance test on the welded capacitor, and screening to obtain the high-reliability high-voltage non-solid tantalum capacitor. The tantalum capacitor prepared by the invention has the characteristics of high-voltage resistance, high-temperature resistance and low impedance.

A tantalum capacitor includes a tantalum body including a tantalum element, a conductive polymer layer disposed on the tantalum element, and a tantalum wire penetrating through at least a portion of each of the tantalum element and the conductive polymer layer in a first direction, a molded unit surrounding the tantalum body and, an anode lead frame exposed to one surface of the molded unit and connected to the tantalum wire, a cathode lead frame spaced apart from the anode lead frame and exposed to the one surface of the molded unit, and a first coating layer disposed in at least a portion of a region between the molded unit and the anode lead frame and a region between the molded unit and the cathode lead frame.

The invention discloses a soldering flux for soft soldering of tantalum materials and a preparation method and application of the soldering flux, and relates to the technical field of soldering, and the soldering flux for soft soldering of the tantalum materials comprises, by mass, 15-25% of ammonium fluotitanate, 10-16% of citric acid, 5-8% of sodium gluconate, 10-16% of glycerin, 5-8% of boric acid, 1-3% of sodium dodecyl benzene sulfonate and the balance absolute ethyl alcohol. The soldering flux for soft soldering of the tantalum material is composed of ammonium fluotitanate, citric acid, sodium gluconate, boric acid, glycerin, sodium dodecyl benzene sulfonate and absolute ethyl alcohol according to the specific mass percent, a tantalum pentoxide film on the surface of a tantalum lead can be effectively damaged, and the welding effect of a positive electrode metal pin of a tantalum capacitor and the tantalum lead is improved.

The utility model discloses a non-solid electrolyte tantalum capacitor with a surface-mounted tantalum shell, which relates to the technical field of tantalum capacitors and comprises a base, a connecting unit arranged at the top end of the base and an assembling unit arranged in the base. The connecting unit comprises two connecting bases arranged at the top end of the base, external connecting assemblies arranged on the side faces of the connecting bases, a gland arranged between the two connecting bases and a locking assembly arranged on the side face of the gland. The assembling unit comprises inner sinking grooves formed in the two sides of the interior of the base and a filling assembly arranged at the top end of the base. According to the non-solid electrolyte tantalum capacitor with the surface-mounted tantalum shell, the capacitor is convenient and fast to assemble, the stability of the capacitor shell is optimized, and the limiting effect on the non-solid electrolyte is optimized at the same time.

An automatic rib cutting process of a chip type tantalum capacitor strip, the specific operation is as follows: first, the neatly arranged chip type tantalum capacitor strip is conveyed one by one to the feeding device by the feeding device, the feeding device receives the chip type tantalum capacitor strip and drives it to move upwards, the traction device is connected with the chip type tantalum capacitor strip and is brought into the rib cutting device for rib cutting treatment, when the traction device pulls the next chip type tantalum capacitor strip into the rib cutting device, the chip type tantalum capacitor strip after completing the rib cutting treatment is pushed out to the receiving device at the same time by the traction device; the present application relies on the mutual cooperation between each device to solve the problems existing in manual rib cutting and single strip conveying mechanism rib cutting, the rib cutting efficiency is improved by 800% compared with manual operation, and is improved by 300% compared with single strip conveying mechanism rib cutting, the production cost is effectively reduced; it can be used for cutting ribs of large batch continuous tantalum capacitor whole product, can guarantee to meet the product quality and appearance requirements, ensure that the size of the product after cutting rib is within the qualified range, save the labor cost and improve the production efficiency.

The utility model discloses a device for tantalum capacitor opening aging, which comprises a base, an insulating seat, a fixing seat, a leading-out wire A, a leading-out wire B, an acid filling head and a supporting assembly, the insulating seat is arranged on the base, the fixing seat is arranged in the insulating seat, the leading-out wire A and the leading-out wire B are respectively connected through a capacitor, the capacitor is connected with the insulating seat, and the acid filling head is arranged on the insulating seat. The supporting assembly is connected with the base, and the acid filling head is connected with the supporting assembly. According to the utility model, acid liquid storage and acid injection are carried out through the acid injection head, and the capacitor is directionally fixed through the insulating seat and the fixing seat, so that the production efficiency of acid injection aging is improved. The height of the acid injection head can be adjusted through the supporting assembly, and the injection part can be conveniently attached to the capacitor. The tantalum capacitor opening aging device is convenient to use, simple to maintain and suitable for opening aging of various tantalum capacitors.

The invention discloses a controllable laser processing technology suitable for a tantalum capacitor, and relates to the field of laser processing, and the controllable laser processing technology comprises the following steps: S1, the surface of a shell of the tantalum capacitor is polished for pretreatment; s2, the pretreated shell and a laser head are coaxially fixed, and protective gas is introduced for atmosphere replacement; s3, the to-be-welded area of the shell is subjected to gradient preheating through laser; s4, the preheated area is subjected to continuous annular scanning laser welding through laser; and S5, after welding is completed, slow cooling is conducted under the protective atmosphere to 200 DEG C or below. The temperature rising rate of the tantalum shell is controlled through gradient preheating, local lattice distortion and thermal stress concentration caused by rapid temperature rising during welding can be avoided, the phenomenon of coarse grains can be effectively restrained, conditions are further created for formation of a fine grain structure after welding, and therefore the density of a welding seam is improved, and the welding quality is improved. And the risk of cracks caused by uneven structures is effectively reduced, so that the packaging quality of the tantalum capacitor is improved.

The application discloses a foil type tantalum electrolytic capacitor anode with super high capacitance density and a preparation method thereof. The energy source is a pulse direct current power supply, the pre-processed tantalum foil is used as the anode, the graphite electrode or inert metal is used as the cathode, the anode and the cathode are connected with the pulse direct current power supply, and are placed in an etching solution to perform electrochemical etching. The etching foil is subjected to anodic oxidation in a phosphoric acid aqueous solution to obtain the etched tantalum foil. The electrochemical etching process truly realizes the preparation of the high specific capacity etched tantalum anode foil. For the anode foil with a voltage resistance of 8.3V, the specific capacity is up to 570nF / mm 2 , and the thickness is less than 30μm, which is only 1 / 10 of the traditional sintered tantalum capacitor. If the tantalum capacitor is packaged in a sheet type, the size can be even reduced to below 100μm, which can almost meet the requirements of the most stringent embedded capacitor in technology. If the tantalum capacitor is packaged in a winding type, the maximum capacity can fully meet the requirements of more than 90% of the power system.

The invention discloses a chip-type conductive polymer tantalum capacitor and a preparation method thereof, and belongs to the technical field of tantalum capacitors, gaps are arranged between a tantalum capacitor main body and an external connection plate I and an external connection plate II, and the external connection plate I, the external connection plate II and the tantalum capacitor main body are connected through a guide plate in an extrusion manner, so that the function of multi-directional heat dissipation in the use process is realized; the tantalum capacitor body is of a tantalum capacitor body structure, outer connecting pieces are installed on the outer side of the tantalum capacitor body, inner connecting pieces are installed in the outer connecting pieces, guide plates are installed on the outer sides of the inner connecting pieces, and inner guide plates are installed on the outer sides of the guide plates. Outer guide plates are installed on the inner sides of the first external connection plate and the second external connection plate, the outer guide plates and the inner guide plates are connected in an attached mode, convenient installation and extrusion installation connection are achieved, the guide plates are of a V-shaped extrusion structure, a split type detachable structure is achieved, and the conductive plate is convenient to replace.

The invention relates to an ultra-thin low-impedance tantalum capacitor lead frame and a preparation process of a tantalum capacitor, and belongs to the technical field of tantalum capacitors, the ultra-thin low-impedance tantalum capacitor lead frame comprises a frame body, a cathode connector and an anode limiting body, the frame body is in a sheet shape, two cutting openings are oppositely formed in the frame body, and the cathode connector is connected with the anode limiting body. The two cutting openings are used for being aligned with the planes where the two opposite sides of the resin shell are located respectively, the frame body is provided with an opening gap, the opening gap is located between the two cutting openings and communicates with the cutting openings in the two sides, and the cathode connecting body and the anode limiting body are located between the two cutting openings. And the opening gap is positioned between the cathode connector and the anode limiting body. The tantalum block and the lead frame have the advantages that the utilization rate of the product volume is guaranteed, and meanwhile the relative position between the anode limiting body and the cathode connecting body can be guaranteed in the connecting process of the tantalum block and the lead frame.

The invention belongs to the technical field of tantalum capacitor manufacturing, and particularly relates to a polymerization method for improving the capacity extraction rate of a conductive polymer chip tantalum capacitor, which specifically comprises the following steps of: pretreating a formed tantalum core by using a surfactant, immersing the tantalum core into a polymerization solution in a vacuum environment, quickly taking out after dipping, transferring into polymerization equipment for chemical polymerization reaction, repeating the vacuum dipping and polymerization reaction processes for multiple times, and then sequentially drying and washing with alcohol to obtain the product. The polymerization solution comprises the following components in percentage by weight: 30wt%-80wt% of a polymeric material and 20wt%-70wt% of a solvent A. By using the method disclosed by the invention, a conductive polymer containing polythiophene and derivatives thereof can be formed on the surface of the tantalum core; according to the method, the capacity extraction rate of the tantalum capacitor can be effectively improved by more than 5%, the problem of large high-temperature capacitance variation of the conductive polymer chip type tantalum capacitor is greatly improved, and meanwhile, the polymerization method can effectively improve the production qualification rate of products and reduce the production cost.

The utility model discloses a cathode electrode for anode oxidation of a tantalum capacitor, which comprises a main cathode electrode with a grid structure, a cathode auxiliary electrode is arranged on the periphery of the main cathode electrode, and materials of the cathode electrode and an anode electrode are kept consistent, so that potential difference caused by different electron transmission rates of the two electrodes can be reduced, and electrochemical polarization is reduced; the grid structure of the cathode electrode increases the area of the cathode and is beneficial to uniform distribution of anode current density, and the grid structure of the cathode electrode also reduces the surface tension between the cathode and the electrolyte and increases the contact area between the electrolyte and the cathode, so that the contact area during H < + > reduction reaction is increased; the cathode auxiliary electrode is added, the edge effect is reduced through the cathode auxiliary electrode, and the uniformity of electric field distribution between the cathode and the anode is improved.

The utility model relates to the technical field of capacitors, in particular to an anode leading-out structure of a tantalum electrolytic capacitor, which comprises a tantalum capacitor body, and the anode and the cathode of the tantalum capacitor body are detachably connected with pins and are respectively provided with a leading-out mechanism. The side surface of the leading-out mechanism is provided with a fixing mechanism used for limiting and fixing a pin on the leading-out mechanism 3, the leading-out mechanism comprises a fixing plate, the back surface of the fixing plate is fixedly connected with a welding plate fixedly connected with the positive electrode or the negative electrode of the tantalum capacitor body, and two ends of the front surface of the fixing plate are fixedly connected with contact blocks. According to the utility model, the fixing mechanism is separated from the pin at the corresponding position and then is rotated, so that the fixing mechanism is vertically downward, at the moment, the pin can be detached from the positive electrode or the negative electrode of the tantalum capacitor body and replaced by a new pin, and the tantalum capacitor body does not need to be integrally replaced, so that the cost can be saved.

A tantalum capacitor according to an embodiment of the present disclosure includes: a tantalum body; a tantalum wire connected to the tantalum body; a conductive polymer layer disposed on the tantalum body; and a first reinforcement layer disposed on the conductive polymer layer and including iron (Fe) doped carbon nanotubes.

The invention belongs to the technical field of conductive connection, and discloses a tantalum capacitor electrode connecting structure which comprises a tantalum capacitor connecting seat assembly and a tantalum capacitor assembly, a conductive transposition assembly is arranged at the bottom end in the tantalum capacitor connecting seat assembly, and a first transposition driving assembly and a second transposition driving assembly are arranged at the top end in the tantalum capacitor connecting seat assembly. The conductive positive electrode and the conductive negative electrode are optimized and improved to realize movable conductive wiring, and the conductive positive electrode and the conductive negative electrode are linked with the insertion sequence of the long and short pins of the tantalum capacitor assembly, that is, no matter the long and short pins are positively inserted or reversely inserted, through the linkage of the structure, the wiring efficiency is greatly improved. According to the tantalum capacitor connecting seat assembly, the long and short pins of the tantalum capacitor assembly are enabled to always face the conductive positive electrode and the conductive negative electrode in a one-to-one manner, so that error-avoiding conductive connection is realized, and meanwhile, when the tantalum capacitor assembly is disassembled, through pushing resetting of the arc-shaped reset spring, the tantalum capacitor assembly forms an electrode power-off action of power-off self-popping on the tantalum capacitor connecting seat assembly.

The invention relates to a chip solid capacitor and a coating process thereof, the chip solid tantalum capacitor is composed of a tantalum block, a dielectric oxide layer, a cathode layer, a transition layer, a silver layer and a plastic package layer, the cathode layer is a manganese dioxide layer, and the manganese dioxide layer is formed by thermal decomposition on the tantalum block on which the dielectric oxide layer grows through the coating process; the specific operation of the coating process is specifically limited, and the tantalum block is sequentially impregnated with thin-thick-thick-thin coating liquid, so that the prepared cathode layer is high in density, high in interlayer binding force and free of bubbling and delamination defects, the qualification rate and the moisture resistance of the product are greatly improved, meanwhile, parameters of all stages are controllable and adjustable, and the production cost is reduced. And the production requirements of high-specific-volume tantalum capacitors with different specific volume grades can be met, and the method has a good industrial application prospect.

The invention relates to the technical field of tantalum core manufacturing, and discloses a forming method for reducing shape damage of a tantalum core, which comprises the following steps: S1, preparing a wax dragging liquid: weighing stearic acid, dissolving the stearic acid in an ethylene glycol solution, and stirring until the stearic acid is completely dissolved to obtain the wax dragging liquid of the stearic acid; s2, smearing wax dragging liquid: selecting a forming die, dipping the wax dragging liquid and uniformly smearing the wax dragging liquid in an inner cavity of a female die; s3, compression molding: pouring the tantalum core raw powder into a molding mold, and performing compression molding to obtain a molded tantalum core; s4, pre-sintering: pre-sintering the molded tantalum core in an environment of lower than 200 DEG C; s5, sintering: sintering the molded tantalum core in an environment of higher than 1000 DEG C to obtain an anode tantalum core; and S6, forming, wherein the anode tantalum core is placed in a dilute nitric acid aqueous solution, and constant pressure forming is adopted. Through mold treatment, technological parameter control and material matching, the problem of shape damage in the tantalum core forming process of the high-energy hybrid tantalum capacitor is solved, and the anode tantalum core quality and the capacitor reliability are remarkably improved.

The invention relates to a super-resolution method for tiny target recognition, electronic equipment and a storage medium, and belongs to the technical field of image processing. In order to solve the problems of low resolution and smooth gray difference of a to-be-detected image, an interpretable gradient-guided image super-resolution model is designed, and high-fidelity SR reconstruction of the low-resolution image is realized; in order to solve the problem that a large amount of interference noise exists in the background, a microcrack pixel-level selection module is designed on the basis of an SR model, and the influence of the interference noise is reduced to a certain extent while high-fidelity reconstruction of a microcrack area is achieved. According to the method, high-fidelity super-resolution reconstruction of weak feature microcrack images such as the surface of the tantalum capacitor end electrode can be realized, the influence of background noise is inhibited, and the recognition accuracy of a tiny target is improved.

The utility model discloses a vibration durability high-energy hybrid tantalum capacitor, which comprises a shell, a seat support, a tantalum core, an insulation structure and a cover plate, the seat support, the tantalum core, the insulation structure and the cover plate are sequentially arranged in the shell from bottom to top, the tantalum core is arranged in the seat support, a lead is arranged on the tantalum core, and the cover plate is respectively connected with the shell and the insulation structure. The lead is provided with a pipe sleeve and sequentially penetrates through the insulation structure and the cover plate to extend out of the shell. The first cathode piece is physically isolated from the bottom of the tantalum shell through the seat support, the cathode ruthenium dioxide plating layer is prevented from being damaged in the vibration process, meanwhile, due to the fact that the seat support is designed to be closed, the tantalum core is fixed, and meanwhile insulation between the tantalum core and the tantalum shell is achieved. The fluororubber insulation ring is adopted to replace a traditional insulation upper gasket and a PTFE insulation ring, the number of internal parts is reduced, the stress area of the insulation ring is increased, 70% compression amount is adopted for fluororubber materials, and the buffer space of longitudinal fixed stress is increased.