70 results about "Tantalum capacitor" patented technology

According to the preparation method of the solid tantalum capacitor, the solid tantalum capacitor is composed of a tantalum block, a medium oxide layer with gradient thickness, a cathode layer, a transition layer, a silver layer and a plastic packaging layer, and the thickness of the medium oxide layer is in gradient nonlinear decrease from the outer surface of the tantalum block to the body center of the tantalum block; the preparation method of the solid tantalum capacitor comprises the following steps of pressing and sintering, energizing, heat treatment, complementary forming, coating, graphite silver paste, plastic packaging and multiple times of aging. The environment of the aging process is as follows: the relative humidity is 60-90%, the aging temperature is 60-125 DEG C, and the aging voltage is 0.6-1.5 times of rated voltage; according to the method, secondary energizing and multiple humidifying and aging processes are matched, so that the thickness of the dielectric oxide layer of the solid tantalum capacitor has the structural characteristic of gradually reducing from outside to inside, the capacity contribution degree has the trend of gradually increasing from outside to inside, the short-plate effect of the external dielectric oxide layer is supplemented, and the performance of the solid tantalum capacitor is improved. Therefore, the overall voltage endurance capability of the tantalum capacitor is improved, and the capacity of the tantalum capacitor is not sacrificed.

The invention provides a tantalum capacitor dielectric layer gradient oxidation preparation method and an oxidation film and an anode block thereof, and the method employs a multi-stage gradient boost rate to carry out electrochemical oxidation on a tantalum anode, and controls the boost rate and the oxidation voltage at different stages. And the oxide film forms a grain size gradient structure from the compact layer at the bottom to the nanocrystalline layer at the top, and the film thickness is 400-900 nm. Meanwhile, an electrolyte formula is optimized, ammonium dihydrogen phosphate and cerous nitrate are added into a phosphoric acid solution, the compactness of the film is improved, and oxygen vacancies are inhibited; ozone bubbling treatment is introduced in the constant-pressure stage, and the defect concentration is further reduced. The prepared dielectric layer has high breakdown voltage, low leakage current and high specific capacitance performance, the reliability of the tantalum capacitor is remarkably improved, the service life of the tantalum capacitor is remarkably prolonged, and the dielectric layer is suitable for high-reliability electronic equipment.

The application belongs to the technical field of conductive connection, and discloses a tantalum capacitor electrode connection structure, which comprises a tantalum capacitor connecting seat assembly and a tantalum capacitor assembly. The inside bottom end of the tantalum capacitor connecting seat assembly is provided with a conductive transposition assembly, and the inside top end of the tantalum capacitor connecting seat assembly is provided with a first transposition driving assembly and a second transposition driving assembly. The conductive positive electrode and the conductive negative electrode are optimized and improved, and the movable conductive connection is realized. Moreover, the long and short pins of the tantalum capacitor assembly are inserted in sequence with the conductive positive electrode and the conductive negative electrode. No matter whether the long and short pins are inserted in the positive direction or the reverse direction, the structure linkage is adopted, so that the long and short pins of the tantalum capacitor assembly are always in one-to-one positive direction with the conductive positive electrode and the conductive negative electrode, that is, the error-avoiding conductive connection is realized. When the tantalum capacitor assembly is disassembled, the arc-shaped reset spring is pushed and reset, and the tantalum capacitor assembly forms the electrode power-off action of self-ejection on the tantalum capacitor connecting seat assembly.

The present application relates to patch tantalum capacitor detection screening device and screening method, the device includes base, four-axis articulated arm, material box, camera group, device turnover device and clamping assembly, device turnover device includes long and short side tooling position, clamping assembly includes respectively with a, b jaw piece connected a, b clamping arm, a jaw piece and b jaw piece structure symmetry and opposite arrangement, a, b jaw piece forms test station between. The method includes steps such as boxing, detecting front-up device, detecting back-up device, detecting long-side-up device and detecting short-side-up device, each detection step includes identification, suction, direct or after adjustment and sending to test station. The present application is simple in structure, convenient in operation, the method of classification screening simplifies the complex situation, so as to realize the rapid detection of large quantities of patch tantalum capacitor, not only greatly improve the work efficiency, also effectively reduce the labor intensity of operating personnel.

The utility model discloses a capacitor using a welding type square anode cover plate, comprising a housing, a tantalum core, an insulation assembly and a cover plate, the tantalum core and the insulation assembly are arranged in the housing, the insulation assembly is respectively connected with the tantalum core and the cover plate, the tantalum core is provided with an anode leading-out terminal, the cover plate is respectively connected with the insulation assembly and the housing, and the anode leading-out terminal is provided with a cathode leading-out terminal. A connecting piece is arranged on the cover plate. The welding contact position of the cover plate anode and the tantalum wire is designed to be the square tantalum rod, point-to-point contact between the tantalum wire and the cover plate anode is optimized into point-to-face contact, the welding efficiency and the welding quality are improved under the condition that the welding strength of electric resistance welding is guaranteed, the resistance value of a contact resistor R is improved, and the welding quality is improved. And the welding pressure between the electrodes is greatly reduced, so that the mechanical stress impact borne by the glass insulator in the electric resistance welding process is reduced, and the high-energy hybrid tantalum capacitor with excellent electrical performance, high welding strength and high reliability is obtained.

The invention discloses a preparation method of a high-reliability high-voltage non-solid tantalum capacitor. The preparation method specifically comprises the following steps: step 1, preparing an electrolyte A and an electrolyte B; step 2, assembling and welding a tantalum shell, a tantalum cover, a tantalum core, a polytetrafluoroethylene diaphragm, a gasket, a diaphragm and a ruthenium oxide sheet, and injecting an electrolyte A to fill the residual space in the whole tantalum block; 3, opening aging is carried out on the capacitor at normal temperature, aging gas is pumped out, the electrolyte A is supplemented to fill the capacitor again, then the capacitor is transferred to a drying oven, opening aging is carried out at high temperature, and aging gas is pumped out; 4, putting the capacitor into a drying oven, discharging free electrolyte in the capacitor through heating, taking out the capacitor, naturally cooling to room temperature, injecting electrolyte B, and welding a liquid injection port; and step 5, carrying out high and low temperature performance test on the welded capacitor, and screening to obtain the high-reliability high-voltage non-solid tantalum capacitor. The tantalum capacitor prepared by the invention has the characteristics of high-voltage resistance, high-temperature resistance and low impedance.

A tantalum capacitor includes a tantalum body including a tantalum element, a conductive polymer layer disposed on the tantalum element, and a tantalum wire penetrating through at least a portion of each of the tantalum element and the conductive polymer layer in a first direction, a molded unit surrounding the tantalum body and, an anode lead frame exposed to one surface of the molded unit and connected to the tantalum wire, a cathode lead frame spaced apart from the anode lead frame and exposed to the one surface of the molded unit, and a first coating layer disposed in at least a portion of a region between the molded unit and the anode lead frame and a region between the molded unit and the cathode lead frame.

The application discloses a foil type tantalum electrolytic capacitor anode with super high capacitance density and a preparation method thereof. The energy source is a pulse direct current power supply, the pre-processed tantalum foil is used as the anode, the graphite electrode or inert metal is used as the cathode, the anode and the cathode are connected with the pulse direct current power supply, and are placed in an etching solution to perform electrochemical etching. The etching foil is subjected to anodic oxidation in a phosphoric acid aqueous solution to obtain the etched tantalum foil. The electrochemical etching process truly realizes the preparation of the high specific capacity etched tantalum anode foil. For the anode foil with a voltage resistance of 8.3V, the specific capacity is up to 570nF / mm 2 , and the thickness is less than 30μm, which is only 1 / 10 of the traditional sintered tantalum capacitor. If the tantalum capacitor is packaged in a sheet type, the size can be even reduced to below 100μm, which can almost meet the requirements of the most stringent embedded capacitor in technology. If the tantalum capacitor is packaged in a winding type, the maximum capacity can fully meet the requirements of more than 90% of the power system.

The utility model discloses a cathode electrode for anode oxidation of a tantalum capacitor, which comprises a main cathode electrode with a grid structure, a cathode auxiliary electrode is arranged on the periphery of the main cathode electrode, and materials of the cathode electrode and an anode electrode are kept consistent, so that potential difference caused by different electron transmission rates of the two electrodes can be reduced, and electrochemical polarization is reduced; the grid structure of the cathode electrode increases the area of the cathode and is beneficial to uniform distribution of anode current density, and the grid structure of the cathode electrode also reduces the surface tension between the cathode and the electrolyte and increases the contact area between the electrolyte and the cathode, so that the contact area during H < + > reduction reaction is increased; the cathode auxiliary electrode is added, the edge effect is reduced through the cathode auxiliary electrode, and the uniformity of electric field distribution between the cathode and the anode is improved.

The utility model relates to the technical field of capacitors, in particular to an anode leading-out structure of a tantalum electrolytic capacitor, which comprises a tantalum capacitor body, and the anode and the cathode of the tantalum capacitor body are detachably connected with pins and are respectively provided with a leading-out mechanism. The side surface of the leading-out mechanism is provided with a fixing mechanism used for limiting and fixing a pin on the leading-out mechanism 3, the leading-out mechanism comprises a fixing plate, the back surface of the fixing plate is fixedly connected with a welding plate fixedly connected with the positive electrode or the negative electrode of the tantalum capacitor body, and two ends of the front surface of the fixing plate are fixedly connected with contact blocks. According to the utility model, the fixing mechanism is separated from the pin at the corresponding position and then is rotated, so that the fixing mechanism is vertically downward, at the moment, the pin can be detached from the positive electrode or the negative electrode of the tantalum capacitor body and replaced by a new pin, and the tantalum capacitor body does not need to be integrally replaced, so that the cost can be saved.

A tantalum capacitor according to an embodiment of the present disclosure includes: a tantalum body; a tantalum wire connected to the tantalum body; a conductive polymer layer disposed on the tantalum body; and a first reinforcement layer disposed on the conductive polymer layer and including iron (Fe) doped carbon nanotubes.

The invention relates to a chip solid capacitor and a coating process thereof, the chip solid tantalum capacitor is composed of a tantalum block, a dielectric oxide layer, a cathode layer, a transition layer, a silver layer and a plastic package layer, the cathode layer is a manganese dioxide layer, and the manganese dioxide layer is formed by thermal decomposition on the tantalum block on which the dielectric oxide layer grows through the coating process; the specific operation of the coating process is specifically limited, and the tantalum block is sequentially impregnated with thin-thick-thick-thin coating liquid, so that the prepared cathode layer is high in density, high in interlayer binding force and free of bubbling and delamination defects, the qualification rate and the moisture resistance of the product are greatly improved, meanwhile, parameters of all stages are controllable and adjustable, and the production cost is reduced. And the production requirements of high-specific-volume tantalum capacitors with different specific volume grades can be met, and the method has a good industrial application prospect.

The invention relates to the technical field of tantalum core manufacturing, and discloses a forming method for reducing shape damage of a tantalum core, which comprises the following steps: S1, preparing a wax dragging liquid: weighing stearic acid, dissolving the stearic acid in an ethylene glycol solution, and stirring until the stearic acid is completely dissolved to obtain the wax dragging liquid of the stearic acid; s2, smearing wax dragging liquid: selecting a forming die, dipping the wax dragging liquid and uniformly smearing the wax dragging liquid in an inner cavity of a female die; s3, compression molding: pouring the tantalum core raw powder into a molding mold, and performing compression molding to obtain a molded tantalum core; s4, pre-sintering: pre-sintering the molded tantalum core in an environment of lower than 200 DEG C; s5, sintering: sintering the molded tantalum core in an environment of higher than 1000 DEG C to obtain an anode tantalum core; and S6, forming, wherein the anode tantalum core is placed in a dilute nitric acid aqueous solution, and constant pressure forming is adopted. Through mold treatment, technological parameter control and material matching, the problem of shape damage in the tantalum core forming process of the high-energy hybrid tantalum capacitor is solved, and the anode tantalum core quality and the capacitor reliability are remarkably improved.

The utility model discloses a vibration durability high-energy hybrid tantalum capacitor, which comprises a shell, a seat support, a tantalum core, an insulation structure and a cover plate, the seat support, the tantalum core, the insulation structure and the cover plate are sequentially arranged in the shell from bottom to top, the tantalum core is arranged in the seat support, a lead is arranged on the tantalum core, and the cover plate is respectively connected with the shell and the insulation structure. The lead is provided with a pipe sleeve and sequentially penetrates through the insulation structure and the cover plate to extend out of the shell. The first cathode piece is physically isolated from the bottom of the tantalum shell through the seat support, the cathode ruthenium dioxide plating layer is prevented from being damaged in the vibration process, meanwhile, due to the fact that the seat support is designed to be closed, the tantalum core is fixed, and meanwhile insulation between the tantalum core and the tantalum shell is achieved. The fluororubber insulation ring is adopted to replace a traditional insulation upper gasket and a PTFE insulation ring, the number of internal parts is reduced, the stress area of the insulation ring is increased, 70% compression amount is adopted for fluororubber materials, and the buffer space of longitudinal fixed stress is increased.

The present application belongs to the technical field of tantalum capacitor cathode current lead-out layer, and relates to a composite coating on a tantalum surface and a preparation method thereof, which comprises a base carbon layer, a porous carbon layer and a silver layer, and comprises the following steps: uniformly mixing a solvent, MMA and an initiator, defoaming to obtain a base carbon paste, coating the base carbon paste on the surface of a tantalum core, and solidifying to obtain the base carbon layer; uniformly mixing a solvent, MMA, polyethylene glycol-1500, a carbon conductive agent and an initiator, defoaming to obtain a pore-forming carbon paste, coating the pore-forming carbon paste on the base carbon layer, solidifying and pore-forming to form the porous carbon layer; uniformly mixing bisphenol A epoxy resin, a curing agent, a curing catalyst, a solvent and a silver conductive agent, defoaming to obtain a silver paste, coating the silver paste on the porous carbon layer, and solidifying to obtain the silver layer, thereby obtaining the composite coating; the composite coating can reduce the resistance value, and in turn, the ESR value of the tantalum capacitor.

The utility model relates to the technical field of tantalum capacitors, in particular to an ultra-high-voltage chip tantalum capacitor, which comprises a tantalum capacitor limiting mechanism, a chip capacitor limiting mechanism and a chip capacitor limiting mechanism, the fixing mechanism is fixed at the upper top of the placing box and can limit the ultrahigh-voltage chip tantalum capacitor; and the guide mechanism slides in one side of the placing box and can adjust the electrical connection position. According to the utility model, the designed placement box is fixed on the circuit board, so that a regular placement space can be provided for a plurality of ultrahigh-voltage chip tantalum capacitors, and compared with a traditional series connection mode without a fixing mechanism, the ultrahigh-voltage chip tantalum capacitors are orderly arranged in the storage box, so that random distribution on the circuit board is avoided; the occupied space of the circuit board is greatly reduced, the layout of the circuit board is more compact and reasonable, and miniaturization and integration of electronic equipment are facilitated.

This invention discloses a cap-type tantalum capacitor packaging process and the cap-type tantalum capacitor itself. The packaging process includes the following steps: S1: tantalum core bonding; S2: moisture-proof treatment; S3: encapsulation; S4: overflow treatment; S5: cathode lead-out; S6: anode lead-out; S7: end treatment. The tantalum capacitor is manufactured using the cap-type tantalum capacitor packaging process. The tantalum capacitor has a dual-core parallel structure, including two tantalum cores with tantalum wires inserted inside. A bonding silver paste is placed between the two tantalum cores. An anode lead-out is located at the top of each tantalum core, and a cathode lead-out is located at the bottom. Resin is placed between the two tantalum cores and the anode lead-out. A graphite layer is placed on the bottom and four sides of each tantalum core. This invention uses vibration-induced silver paste impregnation instead of traditional manual coating and bonding. Vibration ensures the silver paste fully fills the gaps between the two cores, completely eliminating defects such as pits and bubbles caused by manual operation, resulting in a smooth and flawless outer surface of the dual cores. This invention solves the problem of bulging and cracking of the encapsulation layer by constructing a pre-existing moisture barrier.

The utility model application discloses a kind of tantalum capacitor and to be welded piece welding production line, belong to tantalum capacitor welding assembly field, tantalum capacitor and to be welded piece welding production line includes: acquisition station, obtains multiple tantalum capacitor core body with tantalum wire;Conveying station, multiple tantalum capacitor core body with tantalum wire is conveyed to place respective tantalum wire on to be welded piece;Or, multiple pre-assembled tantalum capacitor core body is conveyed to to be welded piece, pre-assembled capacitor core body includes;Tantalum capacitor core body with tantalum wire and pad block, pad block connects the tantalum wire of tantalum capacitor core body;Welding station, the tantalum wire of multiple tantalum capacitor core body and to be welded piece are welded;Or, multiple pre-assembled tantalum capacitor core body and to be welded piece are welded.The utility model application can improve tantalum capacitor and to be welded piece welding speed, reduce the manufacturing cost of tantalum capacitor assembly.

A tantalum capacitor including a capacitor body including a tantalum body including a tantalum wire exposed on one side and a capsule portion configured to surround the tantalum body so that an end of the tantalum wire is exposed; a first metal layer on one side of the capacitor body and a second metal layer on one side of the first metal layer; and an external electrode connected to the first metal layer, wherein the first metal layer includes Cr (chromium), Ti (titanium), an alloy thereof, or a mixture thereof, and the second metal layer includes Ni (nickel), an alloy including the same, or a mixture including the same.

This invention relates to the field of capacitor manufacturing technology, and more particularly to a device and method for agglomerating and granulating tantalum powder. The device comprises a frame assembly, a container assembly, a spraying assembly, and a planetary stirring assembly. The container assembly is installed at the bottom of the frame assembly. The spraying assembly is installed on the container assembly with its spraying end facing the inside of the container assembly. The planetary stirring assembly includes a drive motor, a stirring shaft, a first blade, and a second blade. The drive motor is installed at the top of the frame assembly, and the driving stirring shaft extends obliquely into the container assembly. The first blade and the second blade are located at the end of the stirring shaft, and their rotation planes are parallel and both form a predetermined angle with the axis of the stirring shaft. Thus, by uniformly atomizing the binder through the spraying assembly, and combined with the multidimensional shearing and tumbling effect generated by the planetary stirring assembly, the tantalum powder and the binder are fully mixed in three-dimensional space, thereby improving the uniformity and flowability of the agglomerated tantalum powder, and thus improving the uniformity of the anode blank and the electrical performance of the tantalum capacitor.

The application provides a preparation method of a tantalum capacitor electrode, the tantalum capacitor comprising a capacitor element, a positive internal connecting piece, a negative internal connecting piece and a packaging body covering the above components, the preparation method comprising the following steps: polishing the end face of the packaging body exposed with the positive internal connecting piece and the negative internal connecting piece to make the roughness Ra of the end face reach 0.8-3.2 μm to increase the surface friction; uniformly coating the end face of the polished packaging body with conductive paste with a thickness of 5-20 μm, wherein the conductive paste comprises a mixture of metal conductive filler and resin binder; drying the packaging body coated with the conductive paste in an environment with a temperature of 80-150 ℃ to make the conductive paste completely solidify and tightly combine with the end face of the packaging body; and placing the solidified packaging body as a cathode into an electroplating solution containing electrode material to electrochemically deposit, thereby forming an outer electrode layer, wherein the outer electrode layer is electrically connected with the end face of the positive internal connecting piece and the negative internal connecting piece.

The invention discloses a liquid crystal display module PCB anti-interference device, and relates to the technical field of liquid crystal display modules, the liquid crystal display module PCB anti-interference device comprises a PCB substrate, a display driving module, a backlight driving module and a power supply input interface are integrated on the PCB substrate, and a multi-stage power supply filtering module, a signal shielding and impedance matching module and a layout isolation module are arranged on the PCB substrate; the multi-stage power supply filtering module is connected among the power supply input interface, the display driving module and the backlight driving module, the signal shielding and impedance matching module is connected with the display driving module and an external FPC interface, and the layout isolation module is arranged between the display driving module and the backlight driving module. The multi-stage power supply filtering module comprises a common mode inductor, a first differential mode inductor, a second differential mode inductor, a ceramic capacitor bank and a tantalum capacitor bank. According to the invention, a cooperative anti-interference system is constructed from three dimensions of power supply filtering, signal transmission and layout isolation, and the problems of wide-band power supply noise, signal radiation interference and circuit coupling interference are solved.

This invention discloses a method for preparing low-oxygen, high-specific-capacitance tantalum powder for tantalum capacitors, addressing the problems commonly found in existing magnesothermic reduction methods for tantalum powder preparation, such as high oxygen content, difficulty in suppressing the byproduct magnesium tantalate, and poor powder particle uniformity leading to low specific capacitance, high leakage current, and poor electrical performance. This method involves uniformly coating a completely removable soluble additive onto the surface of porous spherical tantalum oxide particles. After drying, these particles are mixed with alkali metal halides and a single-phase addition of metallic magnesium powder. A gradient-temperature reduction process is employed: in the intermediate temperature stage, the additive decomposes to construct a porous framework and initiates initial reduction; in the high-temperature stage, deep reduction is completed. A molten salt medium synergistically regulates the heat of reaction and mass transfer, completely suppressing the formation of magnesium tantalate. The product, after post-treatment, yields tantalum powder with an oxygen content ≤2500 ppm, a specific capacitance ≥110000 μFV / g, and a uniform coral-like porous structure. This method offers a clean and highly controllable process, resulting in high-purity tantalum powder with excellent electrical properties, making it suitable for high-end tantalum electrolytic capacitors.

The invention relates to the technical field of tantalum capacitor processing, in particular to a tantalum capacitor pin bending forming device which comprises a bottom plate, a bending table is fixedly installed at the upper end of the bottom plate, and the tantalum capacitor pin bending forming device is further provided with a bending mechanism used for bending tantalum capacitor pins on the bending table. The bending mechanism comprises two bending rollers which are arranged on the upper side of the bending table and distributed in a bilateral symmetry mode, the rear ends of the bending rollers are rotationally installed on a lifting plate, a fixing frame is installed at the rear end of the lifting plate in a sliding mode, the lower end of the fixing frame is fixedly installed on the bottom plate, and a hydraulic cylinder is fixedly installed at the upper end of the fixing frame. Pins at the left end and the right end of the tantalum capacitor are arranged in grooves in the left side and the right side of the upper end of the bending table respectively, the pins of the tantalum capacitor are clamped and fixed to the bending table by rotating pin clamping plates on the two sides, and the situation that the joints of the pins and the two ends of the tantalum capacitor are strained due to infirm fixation when the pins are bent is conveniently prevented; therefore, the bending quality of the tantalum capacitor is ensured.

The invention discloses a manufacturing method of a tantalum capacitor anode. The manufacturing method comprises the following steps: preprocessing a tantalum block and a tantalum wire; the tantalum block and the tantalum wire are positioned through a welding tool, and the tantalum block to be welded and the tantalum wire to be welded are placed in the sealed and welded cavity; the tantalum block and the tantalum wire are welded and connected through electric resistance welding, and protective gas is continuously introduced during welding; and sintering the tantalum block and the tantalum wire after welding, and taking out the tantalum block and the tantalum wire after the tantalum block and the tantalum wire are cooled to obtain the tantalum capacitor anode. Metallurgical bonding of the tantalum wire and the tantalum block is achieved through resistance welding, solder pollution is avoided, the contact resistance of a connector is smaller than or equal to 5 m omega, the tensile strength is larger than or equal to 5 N, and leakage current stability and structural reliability of the tantalum capacitor are guaranteed. By accurately controlling the welding current, time and pre-pressure, local overmelting of the tantalum block or crushing of a porous structure is avoided, meanwhile, high-temperature oxidation of tantalum is effectively prevented through inert gas protection, and it is ensured that the capacitive performance of the tantalum block is not affected by the welding process.

A preparation method of an internal micro-negative-pressure non-solid tantalum capacitor specifically comprises the following steps: step 1, diluting concentrated sulfuric acid, then adding a high-boiling-point alcohol ether additive and a depolarizer, and uniformly mixing to obtain an electrolyte; 2, assembling and welding the tantalum core, the ruthenium oxide sheet, the polytetrafluoroethylene diaphragm, the gasket and the tantalum shell to obtain a capacitor without electrolyte injection; 3, electrolyte is injected into the capacitor, and the capacitor after electrolyte injection is subjected to opening aging at the normal temperature and the high temperature in sequence; step 4, discharging gas generated by aging of the capacitor, and then supplementing part of the lost electrolyte until a space of 0.2-0.8 ml is reserved in the capacitor; and step 5, transferring the capacitor into a drying oven, heating to enable the interior of the capacitor to expand until the whole internal space is filled with the electrolyte, welding the electrolyte injection hole while the capacitor is hot, and naturally cooling to obtain the internal micro-negative-pressure non-solid tantalum capacitor. The tantalum capacitor prepared by the invention can significantly improve the problem of shell bulging caused by high-temperature thermal expansion, and meets the use requirements.

With this invention, electronic circuit components such as transistors, diodes, zener diodes and varicap diodes, which are conventionally manufactured with semiconductors, can be produced without semiconductors by means of a much simpler and cheaper technology, and by the same technology a compensation capacitor can be manufactured whose capacitance is automatically varied so as to follow changes in the load simultaneously. This principle may also be applied in other areas such as microwaves. In simple terms, the electric and magnetic fields of the main capacitor are blocked by a control voltage and varied between zero and maximum values, and as a result the capacitance of the main capacitor is changed. The fundamental principle here is the control of the electric and magnetic fields between the two conductive plates of a fixed-capacitance capacitor. For this purpose, a control voltage is applied between a third metallic plate, designed as a grid or similar structure so as not to block the electric and magnetic fields of the main capacitor and placed closer to one of the two plates, and the adjacent metallic plate, while a DC voltage (VDD) of suitable value for the circuit is applied across the terminals of the main capacitor. In a slightly different version, two grids are provided so that the structure can be used both as a diode and as a transistor. In both cases, the capacitance value of the main capacitor varies depending on the control voltage, i.e. Co = f(Vi). This means that, similar to classical transistors, the impedance of the circuit varies depending on the control voltage. In this structure, which exhibits behaviour similar to FET transistors, the output voltage is taken across the two outer plates of the capacitor with a design similar to a classical transistor circuit. In the production stage, the dielectric will be formed by coating very thin special plastic or other suitable materials with an appropriate metal of suitable thickness for the design and winding it in roll form. Likewise, dielectric layers may also be formed as very thin oxide or other non-conductive chemical compounds on the surfaces of the metallic 24 plates. That is, use will be made of conventional capacitor technologies such as ceramic, tantalum and electrolytic capacitors. In addition, different methods may be developed depending on the field of application. These designs will find application areas as semiconductor-free transistors, diodes, voltage-controlled variable capacitors, and many other uses, some of which have been explained in this project.

The invention provides a tantalum capacitor core assembly process and a production line. The process part comprises the following steps: preparing a substrate and a tantalum block; dotting silver on the substrate; performing defect detection on the substrate subjected to silver dispensing to generate detection data; transferring the tantalum block to the surface of the substrate, and controlling the placement position of the tantalum block according to the detection data so as to avoid the defect position to form a tantalum block-substrate assembly; the tantalum block-substrate assembly is detected, and unqualified products are removed; and drying and curing the qualified product to form the tantalum capacitor core. In addition, the production line comprises a loading machine, a silver dispensing machine, a cut-off machine, a tray arranging machine, a detecting machine and a drying furnace which are sequentially connected through an automatic conveying component. Wherein a defect identification component is arranged in the silver dotting machine or the cut-off machine; and a transplanting mechanism is arranged on the tray arranging machine or the automatic transmission component. According to the tantalum capacitor core assembly process and the production line provided by the invention, the yield and the production efficiency of the tantalum capacitor can be improved, and the stability of the electrical performance of the tantalum capacitor core and the controllability of the production efficiency are ensured.

A tantalum capacitor according to an embodiment of the present disclosure includes: a tantalum body; a tantalum wire that is connected to the tantalum body; a conductive polymer layer that is disposed on the tantalum body; and a first reinforcing layer that is disposed on the conductive polymer layer and includes carbon nanotube doped with iron (Fe).

The utility model relates to the technical field of tantalum capacitor installation, in particular to a lead frame for an ultra-high voltage chip tantalum capacitor, which comprises a frame main body, a basic sealing module, an independent module and a series module, and is characterized in that the frame main body comprises a packaging substrate, and connecting guide sheets are packaged at the edges of the front side and the rear side in the packaging substrate; module installation clamping grooves are formed in the front edge and the rear edge of the upper surface of the packaging substrate, and the module installation clamping grooves cut the connecting guide piece into multiple sections. The basic sealing module is clamped in the module mounting clamping groove; the independent modules are clamped in the module mounting clamping grooves; and the series modules are clamped in the module mounting clamping grooves. According to the utility model, the independent modules and the series modules which need to be conveyed are respectively taken out according to the specific wiring mode that the ultrahigh-voltage chip tantalum capacitor needing to be installed is installed on the circuit board, and are respectively clamped in the different module installation clamping grooves on the packaging substrate according to the wiring scheme, so that the wiring mode can be freely matched according to requirements; and the method has certain universality.