138 results about "Tantalum capacitor" patented technology

A lightweight compact combined tantalum capacitor comprises a housing with an accommodating cavity formed inside, a packaging cover used for sealing the accommodating cavity, a plurality of single tantalum capacitors arranged in the accommodating cavity, and a fixing mechanism arranged between the packaging cover and the housing. The shell further comprises a plurality of placing grooves which are arranged at the bottom of the accommodating cavity at intervals and are used for placing a plurality of single tantalum capacitors, and two lead holes which are oppositely arranged on the side wall of the accommodating cavity and extend outwards; by limiting the structure of the combined tantalum capacitor, the combined tantalum capacitor structure which is attractive in appearance, compact in space and easy, convenient and rapid to assemble is obtained, meanwhile, the electrical gaps and insulativity between the end faces of the multiple single tantalum capacitors can be guaranteed, the product weight is reduced, the multiple single tantalum capacitors are stably installed, and overall installation is facilitated.

The invention provides a clamp for packaging a capacitor shell, and relates to the field of tantalum capacitor processing, the clamp comprises a clamping mechanism, the clamping mechanism comprises a clamping base, a telescopic rod, a clamping plate and a fixing groove, the clamping mechanism is internally provided with an auxiliary assembly, the auxiliary assembly comprises an extension frame, a sliding groove and a sliding opening, and the extension frame is provided with a clamping groove; an auxiliary clamping assembly is arranged in the auxiliary assembly and comprises a moving block, a sliding block, an extending plate, a spring groove, a limiting rod, a reset spring, a limiting sliding block, an auxiliary clamping block, a hollow groove, a micro vibration motor and a buffering rubber pad. According to the invention, the capacitor is placed between the auxiliary clamping blocks and then is pushed between the clamping plates, so that the capacitor can be conveniently placed, the influence of a small placing space on placement is reduced, bubbles generated by potting can rapidly disappear due to the vibrating capacitor, the bubbles can be conveniently eliminated, and the packaging effect is further improved.

A broadband filter plate type tantalum capacitor comprises a lead frame, a tantalum core and a ceramic capacitor, a positive electrode and a negative electrode of the tantalum core are connected with a positive electrode frame and a negative electrode frame of the lead frame respectively, the positive electrode frame and the negative electrode frame are connected through the ceramic capacitor, and the tantalum core and the ceramic capacitor are of a parallel structure. According to the utility model, through the design of the lead frame and the parallel combination mode of the ceramic capacitor and the tantalum capacitor, the volume efficiency maximization of the tantalum capacitor and the volume maximization of the tantalum core are realized, the reliability and the stability of the tantalum capacitor are improved, the use is simple, and the effect is obvious.

A tantalum capacitor includes a tantalum body including a tantalum element including tantalum powder, and a tantalum wire passing through at least a portion of the tantalum element in a first direction, a molded portion having fifth and sixth surfaces opposing each other in the first direction, third and fourth surfaces opposing each other in a second direction, first and second surfaces opposing each other in a third direction, the molded portion formed to surround the tantalum body, an anode lead frame connected to the tantalum wire, a cathode lead frame spaced apart from the anode lead frame, the cathode lead frame connected to the tantalum body, and a frame terminal disposed on the anode lead frame and the cathode lead frame to be spaced apart from the second surface of the molded portion.

The invention discloses a method for improving the voltage endurance capability of a chip tantalum capacitor, and belongs to the technical field of capacitor manufacturing, and the method comprises the steps: enabling an anode tantalum block formed through a powder metallurgy method to generate a dielectric oxide film in an acid solution, then placing the anode tantalum block in sputtering coating equipment, introducing oxygen, taking tantalum as a target material, and carrying out sputtering coating on the anode tantalum block; a layer of tantalum pentoxide film is generated on the surface; and finally, the chip tantalum capacitor is formed by coating a manganese dioxide or polymer cathode. The invention relates to a method for improving the voltage endurance capability of a chip-type tantalum capacitor, which plays a role in improving the reliability of the chip-type tantalum capacitor.

The invention relates to the technical field of preparation of tantalum capacitor cathode plates, in particular to a preparation device and method of a high-performance tantalum electrolytic capacitor cathode plate, and mainly comprises a support, impregnation spin-drying rollers are symmetrically arranged on the support, and a first conveying belt and a second conveying belt are respectively arranged between the impregnation spin-drying rollers. Tantalum capacitor workpieces are placed on the first conveying belt and the second conveying belt, synchronous rods in the separation mechanism are distributed in a high-low staggered mode, the synchronous rods on the two sides of the tantalum capacitor workpieces ascend and descend in a staggered mode, and the tantalum capacitor workpieces are effectively separated in a reciprocating mode. And the position of the moving block is adjusted through a bidirectional lead screw in the adjusting mechanism, so that cylindrical tantalum capacitor workpieces of different models are adapted.

The invention discloses an anodic oxidation method for improving the uniformity of a dielectric layer of a capacitor. The anodic oxidation method comprises the following steps that a tantalum block is pretreated and then placed in an electrolytic bath; adding electrolyte into the electrolytic bath, and performing oscillation circulation through an oscillator; a tantalum block is sequentially subjected to a pre-oxidation procedure, a main oxidation procedure, a stabilization procedure, heat treatment and constant-pressure treatment, the tantalum block is taken out after treatment is finished, and the tantalum block is cleaned and dried to finish anodic oxidation. The ultrasonic oscillator is additionally arranged in the electrolytic bath, so that the electrolyte concentration gradient can be eliminated, and the thickness uniformity of the dielectric layer is improved. And by adding ammonium dihydrogen phosphate, micropores are filled, the surface of the tantalum block is passivated, and the performance of a capacitor prepared from the tantalum block is improved. Through a staged dynamic oxidation method and a composite electrolyte formula, the uniformity and reliability of a tantalum oxide dielectric layer are remarkably improved, and the method is suitable for industrial production of a high-reliability tantalum capacitor.

According to the preparation method of the solid tantalum capacitor, the solid tantalum capacitor is composed of a tantalum block, a medium oxide layer with gradient thickness, a cathode layer, a transition layer, a silver layer and a plastic packaging layer, and the thickness of the medium oxide layer is in gradient nonlinear decrease from the outer surface of the tantalum block to the body center of the tantalum block; the preparation method of the solid tantalum capacitor comprises the following steps of pressing and sintering, energizing, heat treatment, complementary forming, coating, graphite silver paste, plastic packaging and multiple times of aging. The environment of the aging process is as follows: the relative humidity is 60-90%, the aging temperature is 60-125 DEG C, and the aging voltage is 0.6-1.5 times of rated voltage; according to the method, secondary energizing and multiple humidifying and aging processes are matched, so that the thickness of the dielectric oxide layer of the solid tantalum capacitor has the structural characteristic of gradually reducing from outside to inside, the capacity contribution degree has the trend of gradually increasing from outside to inside, the short-plate effect of the external dielectric oxide layer is supplemented, and the performance of the solid tantalum capacitor is improved. Therefore, the overall voltage endurance capability of the tantalum capacitor is improved, and the capacity of the tantalum capacitor is not sacrificed.

The invention provides a tantalum capacitor dielectric layer gradient oxidation preparation method and an oxidation film and an anode block thereof, and the method employs a multi-stage gradient boost rate to carry out electrochemical oxidation on a tantalum anode, and controls the boost rate and the oxidation voltage at different stages. And the oxide film forms a grain size gradient structure from the compact layer at the bottom to the nanocrystalline layer at the top, and the film thickness is 400-900 nm. Meanwhile, an electrolyte formula is optimized, ammonium dihydrogen phosphate and cerous nitrate are added into a phosphoric acid solution, the compactness of the film is improved, and oxygen vacancies are inhibited; ozone bubbling treatment is introduced in the constant-pressure stage, and the defect concentration is further reduced. The prepared dielectric layer has high breakdown voltage, low leakage current and high specific capacitance performance, the reliability of the tantalum capacitor is remarkably improved, the service life of the tantalum capacitor is remarkably prolonged, and the dielectric layer is suitable for high-reliability electronic equipment.

The application belongs to the technical field of conductive connection, and discloses a tantalum capacitor electrode connection structure, which comprises a tantalum capacitor connecting seat assembly and a tantalum capacitor assembly. The inside bottom end of the tantalum capacitor connecting seat assembly is provided with a conductive transposition assembly, and the inside top end of the tantalum capacitor connecting seat assembly is provided with a first transposition driving assembly and a second transposition driving assembly. The conductive positive electrode and the conductive negative electrode are optimized and improved, and the movable conductive connection is realized. Moreover, the long and short pins of the tantalum capacitor assembly are inserted in sequence with the conductive positive electrode and the conductive negative electrode. No matter whether the long and short pins are inserted in the positive direction or the reverse direction, the structure linkage is adopted, so that the long and short pins of the tantalum capacitor assembly are always in one-to-one positive direction with the conductive positive electrode and the conductive negative electrode, that is, the error-avoiding conductive connection is realized. When the tantalum capacitor assembly is disassembled, the arc-shaped reset spring is pushed and reset, and the tantalum capacitor assembly forms the electrode power-off action of self-ejection on the tantalum capacitor connecting seat assembly.

The utility model discloses a parallel hybrid capacitor, and belongs to the field of capacitors. Comprising a mould pressing packaging shell, an extraction electrode pole piece, a carrier tape, at least one chip tantalum capacitor and at least one multilayer ceramic capacitor. Wherein each chip tantalum capacitor and each multi-layer ceramic capacitor are arranged in parallel and packaged in the mould pressing packaging shell; the carrier tape is arranged at the end parts of the chip tantalum capacitors and the multi-layer ceramic capacitors which are arranged in parallel; an electrode of the chip tantalum capacitor and an electrode of the multi-layer ceramic capacitor are electrically connected with the carrier band, and are connected in parallel through the carrier band to form a hybrid capacitor inner core with a parallel structure; the two sides of the exterior of the mold pressing packaging shell are respectively provided with an extraction electrode pole piece, and the two extraction electrode pole pieces are electrically connected with a carrier band in the mold pressing packaging shell. The capacitor can improve the frequency characteristic of a product and improve the high-frequency filtering effect on the premise of ensuring the stable capacity, and has relatively stable filtering performance.

The invention relates to a tantalum capacitor leakage current detection circuit, which is characterized in that a first divider resistor is connected to a protection resistor in parallel, and a divider signal of the protection resistor is compared with a set reference voltage, so that the continuity check of the detection circuit is realized; a protective resistor voltage division signal is used as a reference voltage to be compared with an input voltage voltage division signal of the numerical control power supply to realize over-current detection protection; the two functions together, so that the tantalum capacitor leakage current detection is suitable for high charging voltage, and the test fixture is prevented from being damaged due to short circuit caused by failure of the protection resistor or incorrect polarity connection or explosion of the unconnected tantalum capacitor.

The present application relates to patch tantalum capacitor detection screening device and screening method, the device includes base, four-axis articulated arm, material box, camera group, device turnover device and clamping assembly, device turnover device includes long and short side tooling position, clamping assembly includes respectively with a, b jaw piece connected a, b clamping arm, a jaw piece and b jaw piece structure symmetry and opposite arrangement, a, b jaw piece forms test station between. The method includes steps such as boxing, detecting front-up device, detecting back-up device, detecting long-side-up device and detecting short-side-up device, each detection step includes identification, suction, direct or after adjustment and sending to test station. The present application is simple in structure, convenient in operation, the method of classification screening simplifies the complex situation, so as to realize the rapid detection of large quantities of patch tantalum capacitor, not only greatly improve the work efficiency, also effectively reduce the labor intensity of operating personnel.

The utility model discloses a tantalum capacitor surge test tool, and aims to solve the problem that a test tool in the prior art cannot bear a tantalum capacitor surge test. The test tool comprises a PCB, a test clamping piece group and a banana head. The test clamping pieces are fixed through screws, replacement is convenient and fast, the shape of the test clamping piece set can adapt to the shape of the tantalum capacitor, it is ensured that the capacitor can be stably fixed in the test clamping pieces in the test process, and the situation that the test result is affected due to looseness is avoided. The first test clamping piece and the second test clamping piece are made of nickel-plated phosphorus copper alloy, and the alloy has the excellent characteristics of pollution resistance, high temperature resistance and difficulty in deformation, can stably work in a tantalum capacitor surge test environment with high requirements, and can bear the impact caused by capacitor explosion, so that the reliability and the safety of the test tool are greatly improved.

The utility model discloses a capacitor using a welding type square anode cover plate, comprising a housing, a tantalum core, an insulation assembly and a cover plate, the tantalum core and the insulation assembly are arranged in the housing, the insulation assembly is respectively connected with the tantalum core and the cover plate, the tantalum core is provided with an anode leading-out terminal, the cover plate is respectively connected with the insulation assembly and the housing, and the anode leading-out terminal is provided with a cathode leading-out terminal. A connecting piece is arranged on the cover plate. The welding contact position of the cover plate anode and the tantalum wire is designed to be the square tantalum rod, point-to-point contact between the tantalum wire and the cover plate anode is optimized into point-to-face contact, the welding efficiency and the welding quality are improved under the condition that the welding strength of electric resistance welding is guaranteed, the resistance value of a contact resistor R is improved, and the welding quality is improved. And the welding pressure between the electrodes is greatly reduced, so that the mechanical stress impact borne by the glass insulator in the electric resistance welding process is reduced, and the high-energy hybrid tantalum capacitor with excellent electrical performance, high welding strength and high reliability is obtained.

The invention discloses a preparation method of a high-reliability high-voltage non-solid tantalum capacitor. The preparation method specifically comprises the following steps: step 1, preparing an electrolyte A and an electrolyte B; step 2, assembling and welding a tantalum shell, a tantalum cover, a tantalum core, a polytetrafluoroethylene diaphragm, a gasket, a diaphragm and a ruthenium oxide sheet, and injecting an electrolyte A to fill the residual space in the whole tantalum block; 3, opening aging is carried out on the capacitor at normal temperature, aging gas is pumped out, the electrolyte A is supplemented to fill the capacitor again, then the capacitor is transferred to a drying oven, opening aging is carried out at high temperature, and aging gas is pumped out; 4, putting the capacitor into a drying oven, discharging free electrolyte in the capacitor through heating, taking out the capacitor, naturally cooling to room temperature, injecting electrolyte B, and welding a liquid injection port; and step 5, carrying out high and low temperature performance test on the welded capacitor, and screening to obtain the high-reliability high-voltage non-solid tantalum capacitor. The tantalum capacitor prepared by the invention has the characteristics of high-voltage resistance, high-temperature resistance and low impedance.

The invention discloses a punch forming clamp for a capacitor packaging shell, and relates to the technical field of tantalum capacitor shell packaging, the punch forming clamp comprises a device frame and a movable clamping frame, guide frames are installed in the middle of the inner side of the device frame in a bilateral symmetry mode, and the movable clamping frame is arranged in the middle of the interior of the guide frames; adjusting screw rods horizontally penetrate through the two sides of the movable clamping frame, and an upper module is installed at the top end of the interior of the device frame. According to the punch forming clamp for the capacitor packaging shell, the movable clamping frames are arranged in a bilateral symmetry mode, the movable clamping frames are matched with the structure arrangement of the adjusting screw rods, appropriate adjustment can be made within a certain range according to the structure size of a capacitor, and the structure of the capacitor is clamped and fixed, so that the application range of the device is guaranteed; and meanwhile, the structure arrangement that the movable clamping frames are matched with the guide frames is adopted, so that the movable clamping frames which are arranged in a bilateral symmetry mode have enough adjusting and stable supporting, and meanwhile structural interference occurring when the upper die set and the lower die set conduct stamping machining on the packaging materials is avoided.

A tantalum capacitor includes a tantalum body including a tantalum element, a conductive polymer layer disposed on the tantalum element, and a tantalum wire penetrating through at least a portion of each of the tantalum element and the conductive polymer layer in a first direction, a molded unit surrounding the tantalum body and, an anode lead frame exposed to one surface of the molded unit and connected to the tantalum wire, a cathode lead frame spaced apart from the anode lead frame and exposed to the one surface of the molded unit, and a first coating layer disposed in at least a portion of a region between the molded unit and the anode lead frame and a region between the molded unit and the cathode lead frame.

The invention discloses a soldering flux for soft soldering of tantalum materials and a preparation method and application of the soldering flux, and relates to the technical field of soldering, and the soldering flux for soft soldering of the tantalum materials comprises, by mass, 15-25% of ammonium fluotitanate, 10-16% of citric acid, 5-8% of sodium gluconate, 10-16% of glycerin, 5-8% of boric acid, 1-3% of sodium dodecyl benzene sulfonate and the balance absolute ethyl alcohol. The soldering flux for soft soldering of the tantalum material is composed of ammonium fluotitanate, citric acid, sodium gluconate, boric acid, glycerin, sodium dodecyl benzene sulfonate and absolute ethyl alcohol according to the specific mass percent, a tantalum pentoxide film on the surface of a tantalum lead can be effectively damaged, and the welding effect of a positive electrode metal pin of a tantalum capacitor and the tantalum lead is improved.

The utility model discloses a non-solid electrolyte tantalum capacitor with a surface-mounted tantalum shell, which relates to the technical field of tantalum capacitors and comprises a base, a connecting unit arranged at the top end of the base and an assembling unit arranged in the base. The connecting unit comprises two connecting bases arranged at the top end of the base, external connecting assemblies arranged on the side faces of the connecting bases, a gland arranged between the two connecting bases and a locking assembly arranged on the side face of the gland. The assembling unit comprises inner sinking grooves formed in the two sides of the interior of the base and a filling assembly arranged at the top end of the base. According to the non-solid electrolyte tantalum capacitor with the surface-mounted tantalum shell, the capacitor is convenient and fast to assemble, the stability of the capacitor shell is optimized, and the limiting effect on the non-solid electrolyte is optimized at the same time.

An automatic rib cutting process of a chip type tantalum capacitor strip, the specific operation is as follows: first, the neatly arranged chip type tantalum capacitor strip is conveyed one by one to the feeding device by the feeding device, the feeding device receives the chip type tantalum capacitor strip and drives it to move upwards, the traction device is connected with the chip type tantalum capacitor strip and is brought into the rib cutting device for rib cutting treatment, when the traction device pulls the next chip type tantalum capacitor strip into the rib cutting device, the chip type tantalum capacitor strip after completing the rib cutting treatment is pushed out to the receiving device at the same time by the traction device; the present application relies on the mutual cooperation between each device to solve the problems existing in manual rib cutting and single strip conveying mechanism rib cutting, the rib cutting efficiency is improved by 800% compared with manual operation, and is improved by 300% compared with single strip conveying mechanism rib cutting, the production cost is effectively reduced; it can be used for cutting ribs of large batch continuous tantalum capacitor whole product, can guarantee to meet the product quality and appearance requirements, ensure that the size of the product after cutting rib is within the qualified range, save the labor cost and improve the production efficiency.

The utility model discloses a device for tantalum capacitor opening aging, which comprises a base, an insulating seat, a fixing seat, a leading-out wire A, a leading-out wire B, an acid filling head and a supporting assembly, the insulating seat is arranged on the base, the fixing seat is arranged in the insulating seat, the leading-out wire A and the leading-out wire B are respectively connected through a capacitor, the capacitor is connected with the insulating seat, and the acid filling head is arranged on the insulating seat. The supporting assembly is connected with the base, and the acid filling head is connected with the supporting assembly. According to the utility model, acid liquid storage and acid injection are carried out through the acid injection head, and the capacitor is directionally fixed through the insulating seat and the fixing seat, so that the production efficiency of acid injection aging is improved. The height of the acid injection head can be adjusted through the supporting assembly, and the injection part can be conveniently attached to the capacitor. The tantalum capacitor opening aging device is convenient to use, simple to maintain and suitable for opening aging of various tantalum capacitors.

According to the electrochemical etching method for the anode foil of the high-voltage tantalum capacitor, the tantalum foil is pre-oxidized before etching processing, isotropic etching of the tantalum foil can be achieved by controlling the thickness of an oxidation film on the surface of the tantalum foil, and therefore circular corrosion holes are formed; the corrosion hole with the morphology can eliminate the limitation of adverse crystal face orientation on the depth of the corrosion hole to the greatest extent; then, pulse current is used for hole forming, so that the density of initial corrosion holes can be improved; on the basis, direct current and constant current are used for reaming, so that the diameter and depth of a corrosion hole can be further increased; and finally, enabling the etched tantalum foil to form the high-voltage tantalum capacitor anode foil with high specific volume. The capacitance density of the tantalum anode foil formed by the method can reach 92.6 nF / mm < 2 > under the voltage of 100V, which is about 6 times higher than that before the process is improved. Therefore, the performance of the anode foil of the high-voltage tantalum capacitor is effectively improved.

The invention discloses a controllable laser processing technology suitable for a tantalum capacitor, and relates to the field of laser processing, and the controllable laser processing technology comprises the following steps: S1, the surface of a shell of the tantalum capacitor is polished for pretreatment; s2, the pretreated shell and a laser head are coaxially fixed, and protective gas is introduced for atmosphere replacement; s3, the to-be-welded area of the shell is subjected to gradient preheating through laser; s4, the preheated area is subjected to continuous annular scanning laser welding through laser; and S5, after welding is completed, slow cooling is conducted under the protective atmosphere to 200 DEG C or below. The temperature rising rate of the tantalum shell is controlled through gradient preheating, local lattice distortion and thermal stress concentration caused by rapid temperature rising during welding can be avoided, the phenomenon of coarse grains can be effectively restrained, conditions are further created for formation of a fine grain structure after welding, and therefore the density of a welding seam is improved, and the welding quality is improved. And the risk of cracks caused by uneven structures is effectively reduced, so that the packaging quality of the tantalum capacitor is improved.

The application discloses a foil type tantalum electrolytic capacitor anode with super high capacitance density and a preparation method thereof. The energy source is a pulse direct current power supply, the pre-processed tantalum foil is used as the anode, the graphite electrode or inert metal is used as the cathode, the anode and the cathode are connected with the pulse direct current power supply, and are placed in an etching solution to perform electrochemical etching. The etching foil is subjected to anodic oxidation in a phosphoric acid aqueous solution to obtain the etched tantalum foil. The electrochemical etching process truly realizes the preparation of the high specific capacity etched tantalum anode foil. For the anode foil with a voltage resistance of 8.3V, the specific capacity is up to 570nF / mm 2 , and the thickness is less than 30μm, which is only 1 / 10 of the traditional sintered tantalum capacitor. If the tantalum capacitor is packaged in a sheet type, the size can be even reduced to below 100μm, which can almost meet the requirements of the most stringent embedded capacitor in technology. If the tantalum capacitor is packaged in a winding type, the maximum capacity can fully meet the requirements of more than 90% of the power system.

The invention discloses a chip-type conductive polymer tantalum capacitor and a preparation method thereof, and belongs to the technical field of tantalum capacitors, gaps are arranged between a tantalum capacitor main body and an external connection plate I and an external connection plate II, and the external connection plate I, the external connection plate II and the tantalum capacitor main body are connected through a guide plate in an extrusion manner, so that the function of multi-directional heat dissipation in the use process is realized; the tantalum capacitor body is of a tantalum capacitor body structure, outer connecting pieces are installed on the outer side of the tantalum capacitor body, inner connecting pieces are installed in the outer connecting pieces, guide plates are installed on the outer sides of the inner connecting pieces, and inner guide plates are installed on the outer sides of the guide plates. Outer guide plates are installed on the inner sides of the first external connection plate and the second external connection plate, the outer guide plates and the inner guide plates are connected in an attached mode, convenient installation and extrusion installation connection are achieved, the guide plates are of a V-shaped extrusion structure, a split type detachable structure is achieved, and the conductive plate is convenient to replace.

The invention belongs to the technical field of tantalum capacitors, and particularly relates to a method for reducing high-temperature leakage current of a tantalum capacitor, which comprises the following steps of: 1) passivating a microporous metal plate: passivating the microporous metal plate in concentrated nitric acid, cooling to room temperature and then taking out the microporous metal plate; 2) corrosion of the microporous metal plate: soaking the passivated microporous metal plate in a sodium hydroxide solution, and washing with water; (3) forming: taking the sintered tantalum core as an anode, taking the microporous metal plate treated in the step (2) as a cathode, adding a forming liquid into a forming tank, boosting to a capacity testing voltage at a constant current density of 0.01-0.06 A / g, and then keeping the voltage constant; (4) post-treatment; after the tantalum anode manufactured by the method is subjected to traditional coating, assembling and aging processes, high-temperature and low-leakage-current tantalum capacitor production is realized, and the product percent of pass is high. The microporous metal plate used in the invention has a large specific surface area, and has the effects of low electron density per unit area and uniform electric field distribution in the forming process of tantalum capacitor manufacturing.

The invention relates to an ultra-thin low-impedance tantalum capacitor lead frame and a preparation process of a tantalum capacitor, and belongs to the technical field of tantalum capacitors, the ultra-thin low-impedance tantalum capacitor lead frame comprises a frame body, a cathode connector and an anode limiting body, the frame body is in a sheet shape, two cutting openings are oppositely formed in the frame body, and the cathode connector is connected with the anode limiting body. The two cutting openings are used for being aligned with the planes where the two opposite sides of the resin shell are located respectively, the frame body is provided with an opening gap, the opening gap is located between the two cutting openings and communicates with the cutting openings in the two sides, and the cathode connecting body and the anode limiting body are located between the two cutting openings. And the opening gap is positioned between the cathode connector and the anode limiting body. The tantalum block and the lead frame have the advantages that the utilization rate of the product volume is guaranteed, and meanwhile the relative position between the anode limiting body and the cathode connecting body can be guaranteed in the connecting process of the tantalum block and the lead frame.

The invention belongs to the technical field of tantalum capacitor manufacturing, and particularly relates to a polymerization method for improving the capacity extraction rate of a conductive polymer chip tantalum capacitor, which specifically comprises the following steps of: pretreating a formed tantalum core by using a surfactant, immersing the tantalum core into a polymerization solution in a vacuum environment, quickly taking out after dipping, transferring into polymerization equipment for chemical polymerization reaction, repeating the vacuum dipping and polymerization reaction processes for multiple times, and then sequentially drying and washing with alcohol to obtain the product. The polymerization solution comprises the following components in percentage by weight: 30wt%-80wt% of a polymeric material and 20wt%-70wt% of a solvent A. By using the method disclosed by the invention, a conductive polymer containing polythiophene and derivatives thereof can be formed on the surface of the tantalum core; according to the method, the capacity extraction rate of the tantalum capacitor can be effectively improved by more than 5%, the problem of large high-temperature capacitance variation of the conductive polymer chip type tantalum capacitor is greatly improved, and meanwhile, the polymerization method can effectively improve the production qualification rate of products and reduce the production cost.

The utility model discloses a cathode electrode for anode oxidation of a tantalum capacitor, which comprises a main cathode electrode with a grid structure, a cathode auxiliary electrode is arranged on the periphery of the main cathode electrode, and materials of the cathode electrode and an anode electrode are kept consistent, so that potential difference caused by different electron transmission rates of the two electrodes can be reduced, and electrochemical polarization is reduced; the grid structure of the cathode electrode increases the area of the cathode and is beneficial to uniform distribution of anode current density, and the grid structure of the cathode electrode also reduces the surface tension between the cathode and the electrolyte and increases the contact area between the electrolyte and the cathode, so that the contact area during H < + > reduction reaction is increased; the cathode auxiliary electrode is added, the edge effect is reduced through the cathode auxiliary electrode, and the uniformity of electric field distribution between the cathode and the anode is improved.