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Burn-in method of high-temperature-resistant tantalum capacitor

A tantalum capacitor, high temperature resistant technology, used in the field of tantalum electrolytic capacitor aging, can solve the problems of instrument output waveform distortion, high downtime cost, circuit can not work normally, etc., to ensure reliability and life, improve service life, shorten Effects of aging time

Active Publication Date: 2014-06-11
CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Existing tantalum capacitors fail due to thermal breakdown due to high ambient temperature, which leads to distortion of the output waveform of electronic equipment and instruments, and the circuit cannot work normally
And equipment failure will cause extremely high downtime costs. If an electronic component fails in a drill string operating for several miles underground, it will take more than a day to repair and replace it. The operation of a complex deepwater offshore drilling platform costs an average of 1 million US dollars per day

Method used

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  • Burn-in method of high-temperature-resistant tantalum capacitor
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  • Burn-in method of high-temperature-resistant tantalum capacitor

Examples

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Effect test

Embodiment 1

[0019] An aging method for high temperature resistant tantalum capacitors, taking CAXH type 50V160μF as an example, it includes the following steps:

[0020] (1) Apply a constant voltage of 3V to the packaged tantalum capacitor for 1.5h at room temperature;

[0021] (2) Stage of temperature rise and pressure application: Apply a DC voltage to both ends of the encapsulated tantalum capacitor at a temperature of 85°C, power on for 12 hours, and the applied voltage is 1U R , where U R The rated voltage of the tantalum capacitor is 50V;

[0022] (3), temperature rise and pressure stage II: Apply a DC voltage to both ends of the tantalum capacitor at a temperature of 125°C, power on for 1h, and the applied voltage is 0.63U R ;

[0023] (4) Temperature rise and pressure stage Ⅲ: Apply a DC voltage to both ends of the tantalum capacitor at a temperature of 200°C, power on for 2.5h, and the applied voltage is 0.58U R ;

[0024] (5) Stage IV of temperature rise and pressure applic...

Embodiment 2

[0028] A aging method for high temperature resistant tantalum capacitors, CAXH type 75V180μF, it includes the following steps:

[0029] (1) Apply a constant voltage of 5V to the packaged tantalum capacitor for 1.5h at room temperature;

[0030] (2), temperature rise and pressure stage Ⅰ: Apply a DC voltage to both ends of the packaged tantalum capacitor at a temperature of 85°C, power on for 12 hours, and the applied voltage is U R , where U R The rated voltage of the tantalum capacitor is 75V;

[0031] (3) Phase II of temperature rise and pressure application: Apply a DC voltage to both ends of the tantalum capacitor at a temperature of 125°C, power on for 1.5h, and the applied voltage is 0.63U R ;

[0032] (4) Temperature rise and pressure stage Ⅲ: Apply a DC voltage to both ends of the tantalum capacitor at a temperature of 200°C, power on for 2 hours, and the applied voltage is 0.58U R ;

[0033] (5) Stage IV of temperature rise and pressure application: Apply a DC vo...

Embodiment 3

[0037] A method for aging a high-temperature-resistant tantalum capacitor, which comprises the following steps:

[0038] (1) Apply a constant voltage of 4V to the packaged tantalum capacitor for 1.5h at room temperature;

[0039] (2), temperature rise and pressure stage Ⅰ: Apply a DC voltage to both ends of the encapsulated tantalum capacitor at a temperature of 80°C, power on for 24 hours, and the applied voltage is 1U R , where U R is the rated voltage of the tantalum capacitor;

[0040] (3) Phase II of temperature rise and pressure application: Apply a DC voltage to both ends of the tantalum capacitor at a temperature of 120°C, power on for 3 hours, and the applied voltage is 0.65U R ;

[0041] (4), temperature rise and pressure stage III: Apply a DC voltage to both ends of the tantalum capacitor at a temperature of 190°C, power on for 1.5h, and the applied voltage is 0.55U R ;

[0042] (5) Stage IV of temperature rise and pressure application: Apply a DC voltage to bo...

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Abstract

The invention discloses a burn-in method of a high-temperature-resistant tantalum capacitor. The method comprises the following steps that (1), constant voltage being 2-5 V is exerted on the capacitor at the room temperature; (2), the capacitor is electrified with voltage 1UR at the temperature being 80-90 DEG C; (3), the capacitor is electrified with voltage 0.62-0.65 UR at the temperature being 120-130 DEG C; (4), the capacitor is electrified with voltage 0.55-0.6 UR at the temperature being 190-205 DEG C; (5), the capacitor is electrified with voltage 0.45-0.52 UR at the temperature being 225-230 DEG C; (6), the capacitor is naturally cooled; (7), the cooled capacitor is heated with voltage. The method has the advantages that burn-in is carried out by application of different voltages through high-temperature sections, the burn-in time in the prior art is shortened greatly, the burn-in purpose is achieved, the reliability and the service life are ensured, the tantalum capacitor can stably work for a long time at the high temperature being 230 DEG C, the service life of the capacitor is prolonged, and the blank of the tantalum capacitor burn-in technology above the 200 DEG C is filled.

Description

technical field [0001] The invention relates to an aging technology for a high-temperature-resistant tantalum capacitor, in particular to an aging method for a tantalum electrolytic capacitor under a high-temperature environment of 200-230°C, and belongs to the technical field of capacitors. Background technique [0002] As a common electronic component, electrolytic capacitors are widely used in communications, aerospace and military industries, submarine cables and advanced electronic devices, consumer appliances, televisions, etc. equal effect. Tantalum capacitors produced by conventional manufacturing processes are stable below 125°C. But for deep drilling, geological exploration, and electronics for working in deep space, the industry is starting to drill deeper due to dwindling natural resource reserves and technological advancements in subterranean drilling, and it's starting to drill deeper at higher geothermal gradients (the global geothermal gradient is generally ...

Claims

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Application Information

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IPC IPC(8): H01G9/00
Inventor 鄢波张选红阳元江王刚冯建华马腾双潘齐凤杨槐香吴著刚
Owner CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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