60 results about "Thermal breakdown" patented technology

The invention discloses a high-frequency and high-voltage resistant heat shrink tube, which adopts polyethylene as a main body resin, is a non-polar material, has a dipole moment of 0 and a very low dielectric loss of 10 <-4 >, and can realize higher-voltage thermal breakdown under high frequency due to the relatively low dielectric loss. Meanwhile, the insulating heat conduction material with low dielectric loss and high heat conductivity coefficient is selected, and when the polyethylene material generates heat at high frequency, the heat shrink tube has good heat conductivity coefficient and small temperature rise, so that the voltage of heat breakdown resistance of the heat shrink tube can be further improved. According to the high-frequency and high-voltage resistant heat shrink tube, the leakage current does not exceed 100 mA after the high-frequency and high-voltage resistant heat shrink tube is resistant to the voltage of 5000 V at the frequency of 400 + / -100 kHz for 60 s, and the safety requirement of the national standard GB9706.202-2021 is met.

The invention relates to the technical field of semiconductor testing, in particular to a method and a system for testing avalanche tolerance of a semiconductor diode. The method comprises the following steps: in the process of peak voltage stimulation and recovery to a stable state, obtaining a thermal imaging image of a semiconductor diode, and determining a peak value region of local temperature; determining a heat dissipation insufficiency index according to the temperature change and the area of the peak region; determining a local overheating factor of the thermal imaging image in combination with the heat dissipation insufficiency index and the distances of all peak regions; determining the dissipation rate of the local overheating phenomenon of the diode according to the numerical change of the local overheating factors of all thermal imaging images on the time sequence; determining the possibility of thermal breakdown by combining the local overheating factor and the dissipation rate; and determining the avalanche tolerance according to the numerical change of all thermal breakdown possibilities of the diode at different peak voltages. The avalanche tolerance can be specifically analyzed according to the temperature change, so that the accuracy of the avalanche tolerance is higher.

The invention discloses an overload protection method for an electric compressor controller, which comprises the following steps: when the rotating speed of a compressor is in a low rotating speed interval, executing a compressor load dynamic protection strategy; when the compressor load dynamic protection strategy is executed, compressor parameters are obtained in real time, a phase current effective value protection threshold value is preset based on the compressor load, the compressor rotating speed and the compressor rotating speed, and the phase current effective value protection threshold value is obtained according to the current compressor load, the compressor rotating speed and the compressor rotating speed; and the current compressor phase current effective value is compared with the phase current effective value protection threshold value, and whether an overload protection shutdown strategy is triggered or not is judged. Under the working conditions of low rotating speed and high load, before the heat of the IGBT begins to accumulate but the temperature value does not reach the crystallization temperature 175 DEG C, the overload shutdown protection strategy is preferentially reflected, and the thermal breakdown of the IGBT caused by frequent over-temperature is avoided. The dynamic overload protection strategy is higher in precision and faster in response, and preposed protection of the temperature of the IGBT is achieved in advance in an overload protection mode under the low-rotating-speed and high-load working condition.

The utility model discloses a photovoltaic module junction box. The photovoltaic module junction box comprises a junction box body, the top surface of which is provided with a positioning groove; the junction box diode is fixed in the junction box body; the junction box diode is provided with a riveting hole corresponding to the positioning groove; the bus bar outgoing line is arranged on the junction box diode; the bus bar outgoing line is provided with a lead fixing hole corresponding to the riveting hole; the core-pulling expansion rivet penetrates through the positioning groove and is fixed in the riveting hole; the bottom of the core-pulling expansion rivet is fixed in the riveting hole in an expansion mode, the middle of the core-pulling expansion rivet penetrates through the lead fixing hole, and the top of the core-pulling expansion rivet tightly presses the bus bar outgoing line. According to the application, the bus bar outgoing line is tightly connected with the junction box diode without pseudo soldering, and the situation that the bypass diode is subjected to thermal breakdown damage and even the junction box is burnt due to pseudo soldering heating is avoided.

The invention discloses a surface treatment method for improving the ohmic contact performance of a photoconductive switch and the photoconductive switch, and the method comprises the steps: carrying out the surface treatment of the surface of an epitaxial structure through the combination of dry etching and wet etching before an ohmic contact electrode is formed on the surface of the epitaxial structure. According to the method, surface treatment combining dry etching and wet etching is performed on the surface of the epitaxial structure before the ohmic contact electrode is formed on the epitaxial structure, so that the contact resistivity of the epitaxial structure is reduced, the ohmic contact performance of the photoconductive switch is further improved, thermal breakdown of the photoconductive switch is prevented, and the pressure resistance of the photoconductive switch is enhanced.

The invention discloses an efficient electric flame furnace end and an electric flame stove. The efficient electric flame furnace end comprises a shell, a single anode needle, a single cathode tube, a ceramic tube, an air duct inner wall, an air duct outer wall, a heating coil and an airflow generation assembly. The single anode needle and the single cathode tube are arranged, the actual discharge gap between the single anode needle and the single cathode tube can be set to be 10-20 cm and is far larger than the preset discharge distance, air thermal breakdown can still be achieved by adopting stable breakdown voltage in the prior art, extra voltage increase is not needed, meanwhile, the long-distance arrangement of the single anode needle and the single cathode tube is achieved, and the service life of the anode needle and the cathode tube is prolonged. The collision probability of gas molecules and electric field electrons is increased through the long arc, and high-efficiency heating is achieved; in addition, due to the arrangement of the single anode needle and the single cathode tube, the structure of the furnace end is simplified, the number of electrodes and a complex arrangement structure are reduced, and the assembly difficulty and the production and manufacturing cost are reduced; and meanwhile, the simplified structure enables air flow in the furnace end to be smoother, electric field distribution to be more concentrated, and the problems of mutual interference among multiple electrodes, electric field disorder and unstable discharge are avoided.

The utility model discloses a passive adjustable voltage clamping circuit with a temperature protection function, which comprises an input positive end IN +, an input negative end IN-, a diode D1, a diode D2, a diode D3, a triode Q1, a field effect transistor Q2, a triode Q3, a controllable precise voltage stabilizing source N1, a temperature sensor RT1, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6, a resistor R7 and a slide rheostat R8, the input positive end IN + and the input negative end IN-serve as input power sources, the clamping circuit works passively and can bear very high power, and the bearing power depends on the peak power of the field efficiency tube; the clamping voltage is adjustable, the voltage precision is high, the error is controlled below 1%, the field effect transistor Q2 has an over-temperature protection function, the circuit is prevented from being damaged due to thermal breakdown when external high voltage lasts for a long time, the circuit is simple, the circuit is composed of discrete components, the cost is low, implementation is easy, and the cost performance is high.

This invention belongs to the field of power electronics technology and relates to a DC electronic switch circuit with over-temperature protection and spike suppression, and its operating method. It includes: a power unit, whose input terminal is connected to the positive DC input terminal H3, and whose output terminal is connected to the positive DC output terminal H5; a drive unit, whose input terminal is connected to the drive signal terminal H1, and whose output terminal is connected to the control terminal of the power unit; an over-temperature protection unit, whose sampling terminal is thermally coupled to the power unit, and whose control terminal is connected to the drive unit; a spike suppression unit, including a first spike suppression branch and a second spike suppression branch; and a negative DC output terminal H6 connected to the negative DC input terminal H4. This invention achieves real-time monitoring and active protection of the junction temperature of the power device, rapidly shutting down in case of overheating to avoid thermal breakdown; simultaneously, it utilizes bidirectional spike suppression technology to effectively block surge impacts, ensuring the safe and reliable operation of the electronic switch in harsh electrical environments.

The invention relates to the field of semiconductors, in particular to a silicon carbide MOSFET with low on-resistance and optimized electromagnetism, a high-conductivity region is arranged in a junction field effect transistor region on the side of a Schottky barrier diode, the on-resistance is reduced, the current density uniformity is improved, Schottky barrier diode metal and a source electrode metal electrode are connected through a diversion slope, and the current density uniformity is improved. A junction field effect transistor region is integrated with a grounding metal shielding layer, gate source parasitic capacitance is reduced, inductive coupling is reduced, high-frequency stability is improved, a P-type shielding doping layer is arranged between a source groove and the junction field effect transistor region and between the source groove and an epitaxial layer, double isolation with the metal shielding layer is achieved, and electromagnetic interference is reduced. The high-conductivity region, the diversion slope and the P-type shielding doping layer cooperate to reduce the amplification of short-circuit resistance, prolong the short-circuit tolerance time and avoid the risk of thermal breakdown.

This invention belongs to the field of power engineering technology, specifically a cable connection device, including a housing; a fastening nut is threaded onto the outer surface of the housing; a compression ring is provided between the fastening nut and the housing; a cable body is provided inside the compression ring; the cable body includes a protective sleeve, a support ring, and a conductor. In this invention, the entire contact interface between the conductor and the connection substrate can be directly flushed and wetted by coolant, thereby completely solving the problem of localized overheating caused by incomplete coverage, ensuring the uniformity of temperature distribution at the connection point, and significantly improving connection safety and equipment reliability. Through the above-mentioned efficient and comprehensive cooling, the risk of accelerated aging of insulation materials, thermal breakdown, and short-circuit faults caused by overheating at the conductor connection point is fundamentally reduced. This not only ensures the immediate safety of the cable connection but also extends the service life of the connection device, providing a solid technical guarantee for the long-term stable operation of the entire power system.

The application discloses a dry-type hollow shunt reactor overvoltage protection device and belongs to the technical field of overvoltage protection of power transmission and transformation equipment. When system operation overvoltage occurs, the frequency absorption unit can reduce the oscillation frequency of overvoltage, slow down the rising front of overvoltage, solve the damage of high-frequency components to the reactor winding, and inhibit the overvoltage peak value. When the frequency absorption unit cannot inhibit the overvoltage peak value, the overvoltage absorption unit plays a role in limiting the overvoltage peak value, and the insulation level of the reactor is enhanced. Through the application of the voltage monitoring and conversion unit, when the reactor is normally operated or the overvoltage is lower than the operation threshold value, the high-speed control switch is turned on, the explosion-proof separation unit is short-circuited and bypassed, and the frequency inhibition absorption unit and the overvoltage absorption unit bear the main protection task. When the monitored voltage exceeds the set threshold value or the absorption unit fails or is subjected to thermal breakdown, the high-speed control switch is turned off, the explosion-proof separation unit is connected to the circuit, the faulty unit is timely removed, and the fault expansion is prevented.

The present invention discloses a fully vertical gallium nitride accumulation power device and a preparation method thereof, and belongs to the technical field of semiconductor devices. The key innovation of the fully vertical gallium nitride accumulation power device is that an edge electric field optimization structure is constructed separately on both sides of the gate electrode, and the drain electrode is arranged on the lower surface of the substrate layer corresponding to the source electrode. Based on the mutual cooperation of the key innovation points, on the one hand, the present invention can not only effectively alleviate the edge peak electric field formed by the corners of the gate trench at both ends, but also greatly shorten the current passage path, thereby achieving the purpose of reducing the specific on-resistance while increasing the breakdown voltage. On the other hand, the present invention can avoid the current edge collection effect at the edge of the drain electrode, so that the power device is not easily thermally broken down. On the other hand, the present invention can also increase the density of cells in the chip, thereby increasing the area utilization of the entire chip, and correspondingly achieving the purpose of increasing the total current density.

The invention relates to the technical field of IGBTs (Insulated Gate Bipolar Translator), in particular to a crimping type IGBT assembly, which comprises a first IGBT module, a second IGBT module and a third IGBT module, the second IGBT module is arranged at the top of the third IGBT module; the first IGBT module is arranged at the top of the second IGBT module; the crimping type IGBT assembly further comprises a first upper horizontal row, a first lower horizontal row and a first vertical row. The crimping type IGBT assembly further comprises a second upper horizontal row, a second lower horizontal row and a second vertical row. By optimizing the IGBT module stacking layout and the copper bar connecting structure, the total distance of current transmission paths from the input interface to the collector electrode of each IGBT module and from the output interface to the emitter electrode of each IGBT module is completely consistent, and the balance of parasitic resistance and parasitic inductance of each branch is ensured; therefore, the problem of current unbalance caused by path difference in an existing parallel structure is effectively solved, the current sharing coefficient is stabilized at a high level, and thermal breakdown or electric stress damage caused by long-term overload of a single IGBT module is avoided.

The invention relates to a self-heating discharge gap which comprises a pair of electrodes, and a preset gap distance, namely a gap, is kept between the two electrodes; the cavity is a component made of an insulating material and arranged on the periphery of the gap, and the cavity abuts against the pair of electrodes respectively; and the heating structure is arranged on the outer surface or the inner surface of the discharge gap or in the discharge gap. According to the self-heating discharge gap, when pulse current exists, voltage drop generated when part of current flows through the coating is higher than breakdown voltage in the gap so that the gap can be broken down, and at the moment, most of the current flows through the gap. When the surge protection device is influenced by power frequency overvoltage exceeding pressure-sensitive voltage, no matter whether the voltage can cause MOV thermal breakdown or not, current can flow through the discharge gap coating, because the voltage is lower than starting voltage after MOV series connection with a gap, the coating can be heated to the temperature for fusing a tin soldering point in a short time only by milliampere-level current, so that the temperature of the metal oxide semiconductor can be reduced, and the service life of the metal oxide semiconductor can be prolonged. Therefore, the surge protection device is separated from the power line.

The invention relates to the technical field of intelligent power grids, in particular to a model simulation method for a power supply system and a storage medium. The method comprises the following steps: acquiring power transmission line data; performing electric power tide simulation according to the power transmission line data to obtain electric power tide data; performing cable aging anomaly detection based on the power flow data to obtain cable aging data; performing thermal breakdown risk prediction according to the cable aging data to obtain thermal breakdown data; dielectric layer structure degradation analysis is carried out based on the thermal breakdown data to obtain dielectric layer structure degradation data; performing main bus off-network detection based on the dielectric layer structure degradation data to obtain main bus off-network data; and carrying out sweep range analysis according to the main bus off-network data to obtain local bus off-network data and full bus off-network data. The fault recognition rate and the simulation response accuracy of the power supply system are improved based on the intelligent power grid technology.

The invention relates to a low-loss bridge type heater structure and application thereof, the heater structure comprises a plurality of heater units arranged in parallel, the length of each heater unit is larger than that of a heated unit so as to form a bridge type, and the heater units are connected with a metal layer. According to the low-loss bridge type heater structure, light absorption of heater materials can be reduced, absorption loss can be reduced, the distance between the heater and a heated unit can be further reduced, the heat regulation efficiency is improved, power consumption is reduced, the heat regulation rate is increased, meanwhile, the resistance value of a heating device is reduced through the designed bridge type structure, and the heat regulation efficiency is improved. The compatibility with an electrical system is improved, the condition of overheat breakdown is avoided, and the method has a good application prospect.

The embodiment of the invention relates to the field of photovoltaic technology, and provides a photovoltaic junction box, which comprises a conductive device, and the conductive device comprises a conductive part and a first clamping part which are connected with each other. The diode device comprises diode assemblies which are connected with each other and a second clamping part which is used for being matched with the first clamping part in a clamping manner, so that the conductive piece is electrically connected with the diode assemblies when the first clamping part and the second clamping part are matched in a clamping manner; wherein one of the first clamping part and the second clamping part is a clamping through groove, the other one of the first clamping part and the second clamping part is a clamping protrusion, and an observation hole is formed in the conductive device, so that when the first clamping part and the second clamping part are clamped and matched, the clamping part is located in the observation hole. According to the photovoltaic junction box provided by the embodiment of the invention, at least rapid installation and replacement of the diode device can be realized, the maintenance time and cost are reduced, the thermal breakdown risk of the diode assembly can be avoided, and the thermal breakdown failure rate is reduced.

The present invention relates to the field of semiconductor testing technology, and in particular to a method and system for testing the avalanche withstand capability of semiconductor diodes. The method comprises: obtaining a thermal imaging image of a semiconductor diode during the process of being stimulated by a spike voltage and returning to a stable state, and determining the peak area of ​​the local temperature; determining a heat dissipation index based on the temperature change and the area of ​​the peak area; determining a local overheating factor of the thermal imaging image in combination with the heat dissipation index and the distance of all peak areas; determining a dissipation rate of the local overheating phenomenon of the diode based on the numerical changes of the local overheating factors of all thermal imaging images in a time sequence; determining the possibility of thermal breakdown based on the local overheating factor and the dissipation rate; and determining avalanche withstand capability based on the numerical changes of all thermal breakdown possibilities of the diode at different spike voltages. The present invention can perform a specific analysis of avalanche withstand capability based on temperature changes, thereby making the avalanche withstand capability more accurate.

The utility model discloses a junction box and a photovoltaic assembly. The junction box comprises a box body part, a diode, connecting parts and connecting supports, the diode, the connecting parts and the connecting supports are arranged in the box body part, the connecting supports are arranged on the two sides of the diode respectively, the connecting supports and the diode are connected to form an access, and the access is connected with the box body part. The connecting supports are higher than the diodes, the connecting supports are respectively connected with the connecting parts, and the connecting parts are led out of the box body part to be electrically connected with an external circuit. The photovoltaic module comprises the junction box. The junction box is simpler in structure and beneficial to popularization and use, laser welding is more reasonable and more convenient in the preparation process of the junction box, the diode can be effectively protected from being affected by laser, and the thermal breakdown phenomenon of the diode chip is avoided.

The invention provides a thermoelectric coupling-based solar cell temperature analysis method, medium and equipment, and the method comprises the steps: carrying out the scanning of impedance maps of different types of batteries, and extracting the parameter data of the batteries under different forward bias voltages; the different types of batteries comprise a single normal battery, a single defective battery, a single battery and a solar battery array; analyzing and processing the battery parameter data to obtain influence factors influencing the temperature of the solar battery; wherein the influence factors comprise one or more of reverse current thermal damage of the battery, a critical condition threshold value of thermal breakdown of the battery and impedance characteristics of the battery. According to the method and the device, the solar cell temperature under different conditions is analyzed, so that factors influencing the cell temperature are known more accurately, and the performance of the solar cell is improved.

The invention discloses a cable head stress cone which is used in the technical field of cable head protection equipment. The device comprises: an insulating adhesive body; the insulated inner sleeve comprises two insulated inner half tubes which are oppositely arranged, and the two insulated inner half tubes are connected in a sealing manner through an insulated bonding body; the heat insulation interlayer pipe assembly is arranged on the peripheral side of the insulation inner sleeve in a sleeving mode, the heat insulation interlayer pipe assembly comprises at least one pair of oppositely-arranged heat insulation half pipes, and the two heat insulation half pipes are connected in a sealed mode through an insulation bonding body; and the protective sleeve is arranged outside the peripheral side of the heat insulation interlayer pipe assembly in a sleeving mode. When the insulating inner sleeve encounters high temperature, the insulating inner sleeve can be heated to be ceramized, and the condition of electric breakdown is prevented. The heat insulation interlayer pipe assembly can buffer internal thermal stress and can be matched with the insulation inner sleeve to reduce the gradient difference of internal temperature, and therefore the possibility of thermal breakdown is reduced. And the diameter of the stress cone part of the cable head formed by sleeving multiple pipes is gradually reduced so as to provide protection on an external mechanical structure.

The invention relates to a regulating unit (10) for a battery cell (100), comprising a pressure regulating unit (12), which is designed to adapt a pressure in the battery cell (100), and a logic unit (14), which is designed to detect a thermal breakdown of a battery cell (102) of the battery cell (100), the pressure regulating unit (12) being designed to adjust the pressure in the battery cell (100), and the logic unit (14) being designed to detect the thermal breakdown of the battery cell (102) of the battery cell (100). When a thermal breakdown is detected, the pressure of the battery cell (100) is reduced.

The application discloses a cable head stress cone, which belongs to the technical field of cable head protection equipment. The device comprises an insulating adhesive body, a heat-treated ceramic insulating inner sleeve, the insulating inner sleeve comprising two oppositely arranged insulating inner half tubes, the two insulating inner half tubes being sealingly connected through the insulating adhesive body, a heat-insulating interlayer pipe assembly, the heat-insulating interlayer pipe assembly being sleeved on the outer circumferential side of the insulating inner sleeve, the heat-insulating interlayer pipe assembly comprising at least one pair of oppositely arranged heat-insulating half tubes, the two heat-insulating half tubes being sealingly connected through the insulating adhesive body, and a protective sleeve, the protective sleeve being sleeved on the circumferential side of the heat-insulating interlayer pipe assembly. When the insulating inner sleeve is subjected to high temperature, the insulating inner sleeve is heat-treated to be ceramic, so that the electric breakdown is prevented; the heat-insulating interlayer pipe assembly can buffer the internal thermal stress, and the insulating inner sleeve can reduce the temperature gradient difference, so that the possibility of thermal breakdown is reduced; and the multi-pipe sleeve connection forms the cable head stress cone, the diameter of which gradually decreases to provide protection on the external mechanical structure.

The invention discloses a cascade PIN diode amplitude limiter electrothermal failure simulation method based on field-circuit collaboration, which comprises the following steps: converting a transmission line in a cascade PIN amplitude limiter into an equivalent lumped circuit element, and establishing a field-circuit collaboration simulation model of the amplitude limiter based on the lumped circuit element; obtaining a temperature dependence equation of the specific heat capacity and the heat conductivity, and correcting the heat conductivity and the physical model of the specific heat capacity of the amplitude limiter circuit based on the temperature dependence equation of the specific heat capacity and the heat conductivity; based on the field-circuit co-simulation model and the physical model, obtaining the distribution of a temperature field and an electric field in the amplitude limiter in combination with the thermal damage criterion of the amplitude limiter under the action of the high-power microwave pulse; and based on the temperature field and electric field distribution, obtaining the position of the thermal breakdown damage in the amplitude limiter.

The application relates to a device with an electrostatic discharge protection structure and a manufacturing method thereof, the device comprising a device region and an ESD region, the device region comprising: a substrate; an insulating layer arranged on the substrate; and a device active region layer arranged on the insulating layer; and the ESD region comprising: a semiconductor layer connected with the substrate; a well region arranged in the semiconductor layer; a first doped region arranged on the surface of the well region; a second doped region arranged on the surface of the well region; and a gate arranged above the well region between the first doped region and the second doped region; wherein the gate is a gate of a GGNMOS, the first doped region is a source of the GGNMOS, the second doped region is a drain of the GGNMOS, the semiconductor layer is an emitter of a triode, the second doped region is a collector of the triode, and the well region of the second conduction type is a base of the triode. The application can avoid thermal breakdown failure of the ESD protection structure caused by poor heat dissipation. The ESD region has two current discharge paths, the current discharge efficiency is improved, and the ESD protection capability is high.

The invention discloses an SBD-embedded SiC power device capable of improving short circuit resistance. The SBD-embedded SiC power device comprises a metal drain, an N-type doped semiconductor substrate, an N-type doped semiconductor epitaxial layer, an N-type doped semiconductor JFET region, a gate deep trench, a metal gate, a source shallow trench, SBD metal, a P-type doped semiconductor shielding layer and a metal source. The metal gate is embedded in the top of the gate deep trench. According to the invention, the SBD metal, the source shallow trench and the P-type doped semiconductor shielding layer can reduce the current density when the device is short-circuited, reduce the temperature when the device is short-circuited, and avoid thermal breakdown of the device, so as to improve the short-circuit resistance of the device. Besides, the grid deep groove filled with the high-K dielectric can modulate the potential distribution of the drift region so as to ensure low on-resistance and high reverse breakdown voltage, so that the on-resistance and short-circuit resistance of the device are improved, and the contradictory relation between the on-resistance and the short-circuit resistance is effectively reconciled.

The invention provides an explosion-proof transient voltage suppressor diode in open circuit failure, which belongs to the technical field of surge protection devices and comprises a crystal grain, a first electrode and a second electrode. The insulating layer covers the non-protruding part of the inverted-T-shaped first electrode and exposes the protruding part of the first electrode; the fusible alloy sheet layer is connected with the protruding part of the first electrode; the third electrode is connected with the protruding part of the first electrode through a fusible alloy sheet layer; and the plastic package body is used for wrapping the crystal grains, the first electrode, the second electrode and the insulating layer and exposing the surfaces of the insulating layer and the second electrode. The beneficial effects are that when a surge event occurs, heat generated by grain thermal breakdown is transmitted to the fusible alloy sheet layer, the fusible alloy sheet layer is heated and fused, open circuit failure is realized, and plastic package body explosion caused by metal vaporization when the device is in open circuit failure is avoided; in addition, interference peaks generated when the device bears surge thermal breakdown failure and open circuit failure can be avoided.

The invention relates to a process for cleavage of fuels by thermal breakdown of the fuel to give fuel gas and charcoal within a reactor (3) that extends in a longitudinal direction (L) from an entry section (7) of the reactor (3) to an exit section (9) of the reactor (3), characterized by the process steps of: a. feeding the fuel into the entry section (7) of the reactor (3), with formation of a gas space (16) above a bed of the supplied fuel in the reactor (3), b. conveying the bed of fuel within the reactor (3) from the entry section (7) of the reactor (3) to the exit section (9) of the reactor (3) by means of a mechanical conveying device (15), c. cleaving the solid fuel by thermal breakdown by partial gasification by means of partial oxidation, d. sucking fuel gas out of the gas space (16) at a suction site (27) in the reactor (3) into a recirculation system (25), e. feeding the fuel gas from the recirculation system (25) back into the gas space (16) at a feed point (37) in the reactor (3) which is at a distance from the suction site (27) in the reactor (3), and f. discharging the at least partly broken-down fuel from the reactor (3) in the exit section (9).

The utility model discloses a heat dissipation sandwich structure metal matrix composite film which comprises a surface layer and a bottom layer, the outer surface of the surface layer is provided with first air holes, and the outer surface of the surface layer is provided with scale strips. According to the heat dissipation sandwich structure metal matrix composite film, the bottom layer attached to the equipment is provided with the second air holes, heat enters the heat dissipation layer from the second limiting holes, and due to the fact that the second limiting holes are set to be large in hole diameter, the heat can effectively enter the heat dissipation layer from the second air holes and then enter the first limiting holes to be discharged from the first air holes formed in the upper surface of the surface layer; the first air holes are small in diameter, so that the situation that a large amount of external dust falls into the heat dissipation layer to form blockage is avoided, the good heat dissipation function of the metal-based composite film is reflected, the situation that the metal-based composite film is subjected to thermal breakdown is effectively avoided, and the service life of the metal-based composite film is prolonged. And meanwhile, the blades protect the equipment from high temperature to influence normal internal operation, and meanwhile, the service life of internal parts of the equipment is prolonged.