28 results about "Thermal breakdown" patented technology

The invention discloses an efficient electric flame furnace end and an electric flame stove. The efficient electric flame furnace end comprises a shell, a single anode needle, a single cathode tube, a ceramic tube, an air duct inner wall, an air duct outer wall, a heating coil and an airflow generation assembly. The single anode needle and the single cathode tube are arranged, the actual discharge gap between the single anode needle and the single cathode tube can be set to be 10-20 cm and is far larger than the preset discharge distance, air thermal breakdown can still be achieved by adopting stable breakdown voltage in the prior art, extra voltage increase is not needed, meanwhile, the long-distance arrangement of the single anode needle and the single cathode tube is achieved, and the service life of the anode needle and the cathode tube is prolonged. The collision probability of gas molecules and electric field electrons is increased through the long arc, and high-efficiency heating is achieved; in addition, due to the arrangement of the single anode needle and the single cathode tube, the structure of the furnace end is simplified, the number of electrodes and a complex arrangement structure are reduced, and the assembly difficulty and the production and manufacturing cost are reduced; and meanwhile, the simplified structure enables air flow in the furnace end to be smoother, electric field distribution to be more concentrated, and the problems of mutual interference among multiple electrodes, electric field disorder and unstable discharge are avoided.

The utility model discloses a passive adjustable voltage clamping circuit with a temperature protection function, which comprises an input positive end IN +, an input negative end IN-, a diode D1, a diode D2, a diode D3, a triode Q1, a field effect transistor Q2, a triode Q3, a controllable precise voltage stabilizing source N1, a temperature sensor RT1, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6, a resistor R7 and a slide rheostat R8, the input positive end IN + and the input negative end IN-serve as input power sources, the clamping circuit works passively and can bear very high power, and the bearing power depends on the peak power of the field efficiency tube; the clamping voltage is adjustable, the voltage precision is high, the error is controlled below 1%, the field effect transistor Q2 has an over-temperature protection function, the circuit is prevented from being damaged due to thermal breakdown when external high voltage lasts for a long time, the circuit is simple, the circuit is composed of discrete components, the cost is low, implementation is easy, and the cost performance is high.

This invention belongs to the field of power electronics technology and relates to a DC electronic switch circuit with over-temperature protection and spike suppression, and its operating method. It includes: a power unit, whose input terminal is connected to the positive DC input terminal H3, and whose output terminal is connected to the positive DC output terminal H5; a drive unit, whose input terminal is connected to the drive signal terminal H1, and whose output terminal is connected to the control terminal of the power unit; an over-temperature protection unit, whose sampling terminal is thermally coupled to the power unit, and whose control terminal is connected to the drive unit; a spike suppression unit, including a first spike suppression branch and a second spike suppression branch; and a negative DC output terminal H6 connected to the negative DC input terminal H4. This invention achieves real-time monitoring and active protection of the junction temperature of the power device, rapidly shutting down in case of overheating to avoid thermal breakdown; simultaneously, it utilizes bidirectional spike suppression technology to effectively block surge impacts, ensuring the safe and reliable operation of the electronic switch in harsh electrical environments.

This invention belongs to the field of power engineering technology, specifically a cable connection device, including a housing; a fastening nut is threaded onto the outer surface of the housing; a compression ring is provided between the fastening nut and the housing; a cable body is provided inside the compression ring; the cable body includes a protective sleeve, a support ring, and a conductor. In this invention, the entire contact interface between the conductor and the connection substrate can be directly flushed and wetted by coolant, thereby completely solving the problem of localized overheating caused by incomplete coverage, ensuring the uniformity of temperature distribution at the connection point, and significantly improving connection safety and equipment reliability. Through the above-mentioned efficient and comprehensive cooling, the risk of accelerated aging of insulation materials, thermal breakdown, and short-circuit faults caused by overheating at the conductor connection point is fundamentally reduced. This not only ensures the immediate safety of the cable connection but also extends the service life of the connection device, providing a solid technical guarantee for the long-term stable operation of the entire power system.

The application discloses a dry-type hollow shunt reactor overvoltage protection device and belongs to the technical field of overvoltage protection of power transmission and transformation equipment. When system operation overvoltage occurs, the frequency absorption unit can reduce the oscillation frequency of overvoltage, slow down the rising front of overvoltage, solve the damage of high-frequency components to the reactor winding, and inhibit the overvoltage peak value. When the frequency absorption unit cannot inhibit the overvoltage peak value, the overvoltage absorption unit plays a role in limiting the overvoltage peak value, and the insulation level of the reactor is enhanced. Through the application of the voltage monitoring and conversion unit, when the reactor is normally operated or the overvoltage is lower than the operation threshold value, the high-speed control switch is turned on, the explosion-proof separation unit is short-circuited and bypassed, and the frequency inhibition absorption unit and the overvoltage absorption unit bear the main protection task. When the monitored voltage exceeds the set threshold value or the absorption unit fails or is subjected to thermal breakdown, the high-speed control switch is turned off, the explosion-proof separation unit is connected to the circuit, the faulty unit is timely removed, and the fault expansion is prevented.

The invention relates to the technical field of IGBTs (Insulated Gate Bipolar Translator), in particular to a crimping type IGBT assembly, which comprises a first IGBT module, a second IGBT module and a third IGBT module, the second IGBT module is arranged at the top of the third IGBT module; the first IGBT module is arranged at the top of the second IGBT module; the crimping type IGBT assembly further comprises a first upper horizontal row, a first lower horizontal row and a first vertical row. The crimping type IGBT assembly further comprises a second upper horizontal row, a second lower horizontal row and a second vertical row. By optimizing the IGBT module stacking layout and the copper bar connecting structure, the total distance of current transmission paths from the input interface to the collector electrode of each IGBT module and from the output interface to the emitter electrode of each IGBT module is completely consistent, and the balance of parasitic resistance and parasitic inductance of each branch is ensured; therefore, the problem of current unbalance caused by path difference in an existing parallel structure is effectively solved, the current sharing coefficient is stabilized at a high level, and thermal breakdown or electric stress damage caused by long-term overload of a single IGBT module is avoided.

The invention relates to the technical field of intelligent power grids, in particular to a model simulation method for a power supply system and a storage medium. The method comprises the following steps: acquiring power transmission line data; performing electric power tide simulation according to the power transmission line data to obtain electric power tide data; performing cable aging anomaly detection based on the power flow data to obtain cable aging data; performing thermal breakdown risk prediction according to the cable aging data to obtain thermal breakdown data; dielectric layer structure degradation analysis is carried out based on the thermal breakdown data to obtain dielectric layer structure degradation data; performing main bus off-network detection based on the dielectric layer structure degradation data to obtain main bus off-network data; and carrying out sweep range analysis according to the main bus off-network data to obtain local bus off-network data and full bus off-network data. The fault recognition rate and the simulation response accuracy of the power supply system are improved based on the intelligent power grid technology.

The embodiment of the invention relates to the field of photovoltaic technology, and provides a photovoltaic junction box, which comprises a conductive device, and the conductive device comprises a conductive part and a first clamping part which are connected with each other. The diode device comprises diode assemblies which are connected with each other and a second clamping part which is used for being matched with the first clamping part in a clamping manner, so that the conductive piece is electrically connected with the diode assemblies when the first clamping part and the second clamping part are matched in a clamping manner; wherein one of the first clamping part and the second clamping part is a clamping through groove, the other one of the first clamping part and the second clamping part is a clamping protrusion, and an observation hole is formed in the conductive device, so that when the first clamping part and the second clamping part are clamped and matched, the clamping part is located in the observation hole. According to the photovoltaic junction box provided by the embodiment of the invention, at least rapid installation and replacement of the diode device can be realized, the maintenance time and cost are reduced, the thermal breakdown risk of the diode assembly can be avoided, and the thermal breakdown failure rate is reduced.

The invention provides a thermoelectric coupling-based solar cell temperature analysis method, medium and equipment, and the method comprises the steps: carrying out the scanning of impedance maps of different types of batteries, and extracting the parameter data of the batteries under different forward bias voltages; the different types of batteries comprise a single normal battery, a single defective battery, a single battery and a solar battery array; analyzing and processing the battery parameter data to obtain influence factors influencing the temperature of the solar battery; wherein the influence factors comprise one or more of reverse current thermal damage of the battery, a critical condition threshold value of thermal breakdown of the battery and impedance characteristics of the battery. According to the method and the device, the solar cell temperature under different conditions is analyzed, so that factors influencing the cell temperature are known more accurately, and the performance of the solar cell is improved.

The invention relates to a regulating unit (10) for a battery cell (100), comprising a pressure regulating unit (12), which is designed to adapt a pressure in the battery cell (100), and a logic unit (14), which is designed to detect a thermal breakdown of a battery cell (102) of the battery cell (100), the pressure regulating unit (12) being designed to adjust the pressure in the battery cell (100), and the logic unit (14) being designed to detect the thermal breakdown of the battery cell (102) of the battery cell (100). When a thermal breakdown is detected, the pressure of the battery cell (100) is reduced.

The application discloses a cable head stress cone, which belongs to the technical field of cable head protection equipment. The device comprises an insulating adhesive body, a heat-treated ceramic insulating inner sleeve, the insulating inner sleeve comprising two oppositely arranged insulating inner half tubes, the two insulating inner half tubes being sealingly connected through the insulating adhesive body, a heat-insulating interlayer pipe assembly, the heat-insulating interlayer pipe assembly being sleeved on the outer circumferential side of the insulating inner sleeve, the heat-insulating interlayer pipe assembly comprising at least one pair of oppositely arranged heat-insulating half tubes, the two heat-insulating half tubes being sealingly connected through the insulating adhesive body, and a protective sleeve, the protective sleeve being sleeved on the circumferential side of the heat-insulating interlayer pipe assembly. When the insulating inner sleeve is subjected to high temperature, the insulating inner sleeve is heat-treated to be ceramic, so that the electric breakdown is prevented; the heat-insulating interlayer pipe assembly can buffer the internal thermal stress, and the insulating inner sleeve can reduce the temperature gradient difference, so that the possibility of thermal breakdown is reduced; and the multi-pipe sleeve connection forms the cable head stress cone, the diameter of which gradually decreases to provide protection on the external mechanical structure.

The application relates to a device with an electrostatic discharge protection structure and a manufacturing method thereof, the device comprising a device region and an ESD region, the device region comprising: a substrate; an insulating layer arranged on the substrate; and a device active region layer arranged on the insulating layer; and the ESD region comprising: a semiconductor layer connected with the substrate; a well region arranged in the semiconductor layer; a first doped region arranged on the surface of the well region; a second doped region arranged on the surface of the well region; and a gate arranged above the well region between the first doped region and the second doped region; wherein the gate is a gate of a GGNMOS, the first doped region is a source of the GGNMOS, the second doped region is a drain of the GGNMOS, the semiconductor layer is an emitter of a triode, the second doped region is a collector of the triode, and the well region of the second conduction type is a base of the triode. The application can avoid thermal breakdown failure of the ESD protection structure caused by poor heat dissipation. The ESD region has two current discharge paths, the current discharge efficiency is improved, and the ESD protection capability is high.

The utility model discloses a heat dissipation sandwich structure metal matrix composite film which comprises a surface layer and a bottom layer, the outer surface of the surface layer is provided with first air holes, and the outer surface of the surface layer is provided with scale strips. According to the heat dissipation sandwich structure metal matrix composite film, the bottom layer attached to the equipment is provided with the second air holes, heat enters the heat dissipation layer from the second limiting holes, and due to the fact that the second limiting holes are set to be large in hole diameter, the heat can effectively enter the heat dissipation layer from the second air holes and then enter the first limiting holes to be discharged from the first air holes formed in the upper surface of the surface layer; the first air holes are small in diameter, so that the situation that a large amount of external dust falls into the heat dissipation layer to form blockage is avoided, the good heat dissipation function of the metal-based composite film is reflected, the situation that the metal-based composite film is subjected to thermal breakdown is effectively avoided, and the service life of the metal-based composite film is prolonged. And meanwhile, the blades protect the equipment from high temperature to influence normal internal operation, and meanwhile, the service life of internal parts of the equipment is prolonged.

The application discloses a temperature rise cooperative monitoring and cooling control system, which comprises a multi-dimensional cooperative perception module, a predictive cooperative decision module, a multi-modal adaptive cooling execution module and an edge computing unit, and realizes data interaction with the edge computing unit through an industrial Ethernet bus; the edge computing unit is also bidirectionally connected with a controller of a water-cooled high-voltage reactive power compensation device to realize device operation state data acquisition and load limiting signal transmission. The application belongs to the technical field of temperature control, and through multi-dimensional global perception, long-time sequence temperature rise accurate prediction and fault linkage emergency response, the application can avoid core component overheating risk in advance, quickly dispose of precursors of faults, effectively reduce the failure rate of faults such as thermal breakdown and short circuit, guarantee the stable operation of a power grid, and improve the operation safety and monitoring accuracy.

The utility model discloses a multi-core group power capacitor, which comprises a sleeve shell, a conduction piece, a sealing cover and a combination seat, a separation seat is arranged in the sleeve shell, a plurality of core bags inserted into the separation seat are arranged in the sleeve shell, a heat conduction block is filled between the sleeve shell and the core bags, and the conduction piece is arranged in the sleeve shell and is connected with the separation seat. The conducting piece conducts heat of the core bag and the separation seat to the sleeve shell, the sealing cover is fixedly connected with the sleeve shell, the sealing cover is connected with a wire connector, the wire connector is electrically connected with the core bag, the multiple combination seats are arranged, each combination seat is provided with a clamping strip, and the combination seats sleeve the sleeve shell through the clamping strips; the separation seat separates the core cladding to avoid heat accumulation, the heat conduction block and the supporting disc conduct heat to the sleeve shell, the temperature in the sleeve shell is prevented from being too high, the problems of thermal breakdown, short circuit and the like of the capacitor are prevented, use is safer, the stability of the performance of the capacitor is maintained, and the capacitor is combined through the combination seat and high in flexibility.

The application discloses a KGD high temperature test system comprising a test socket, the test socket is connected in parallel with a test loop and a discharge loop, and the test loop and the discharge loop are connected to the test socket through a relay. The relay controls the test socket to be connected with the test loop or the discharge loop. By adding a discharge loop and carrying out current limiting setting, short-circuit current can be completely limited, so that the test socket is better protected; the problems that a traditional test loop is large in stray inductance, the test loop is not subjected to current limiting optimization, thermal breakdown of a chip is caused by testing, and a test socket is damaged are solved, the test efficiency and the reliability of chip testing are improved, and the maintenance cost of the test socket is reduced.

The invention discloses a method and a system for testing limit endurance capacity of a resistor disc for a lightning arrester, and belongs to the technical field of alternating current transmission. The method comprises the following steps: determining different initial temperatures and different test working conditions of a test; selecting different power frequency overvoltage test loops under different initial temperatures and different test conditions, and testing a plurality of groups of resistor discs for the lightning arrester to be tested; and after the resistor disc thermally collapses, recording test data when the resistor disc is damaged, and determining the endurance capacity of the resistor disc based on the test data. Compared with a traditional test method for the power frequency voltage tolerance time characteristic of the resistor disc, the test method can be used for researching the limit tolerance capacity of the resistor disc under different working conditions. According to the method provided by the invention, related test researches under the working conditions of different initial temperatures, different energy injection and the like are carried out.

The invention relates to a sheathing paper for aerosol-generating articles, which paper comprises cellulose fibres and onto which paper a composition is applied, which comprises a substance that accelerates the thermal breakdown of cellulose and a binder. Should the mean air permeability of the sheathing paper be 10 cm3 / (cm2·min·kPa) or more, said composition is merely applied in some regions, which cover at least 0.5% and at most 70% of the area of the sheathing paper.

The invention belongs to the technical field of electric power engineering, and particularly relates to a cable connecting device which comprises a shell. The outer thread of the shell is connected with a fastening nut; an extrusion ring is arranged between the fastening nut and the shell; a cable main body is arranged in the extrusion ring; the cable main body comprises a protective sleeve, a supporting ring and a conductor; according to the invention, the whole contact interface of the conductor and the connection substrate can be directly scoured and infiltrated by the cooling liquid, so that the problem of local overheating caused by incomplete coverage is thoroughly solved, the uniformity of temperature distribution of the connection part is ensured, and the connection safety and the equipment reliability are remarkably improved; and the risks of accelerated aging, thermal breakdown and short-circuit faults of an insulating material caused by overheating of the conductor connecting part are fundamentally reduced, so that instant and safe cable connection is guaranteed, the service life of the connecting device is prolonged, and a solid technical guarantee is provided for long-term stable operation of a whole power system.

The application discloses a high-temperature-resistant surge protector and a preparation method thereof. The application is characterized in that a heat-conducting glue is filled in a filling cavity formed between a pressure-sensitive resistor and a shell, so that the pressure-sensitive resistor can quickly dissipate heat to the surrounding in each surge protection module in the surge protector, the heat dissipation effect is improved, the thermal breakdown time of the pressure-sensitive resistor is effectively prolonged, and the thermal runaway phenomenon of the surge protection module is avoided. Meanwhile, the instantaneous heat generated by the pressure-sensitive resistor is promptly and evenly released to the surrounding, so that the tripping point is not out of control due to the instantaneous heat generated on the pressure-sensitive resistor, and the effectiveness and safety of the surge protector are improved. In addition, the heat-conducting glue is constructed by spherical alumina, spherical zinc oxide and hexagonal boron nitride to form a dense and continuous heat-conducting structure, so that the overall heat-conducting performance is significantly improved. Meanwhile, a flame retardant is added to the heat-conducting glue to endow the heat-conducting glue with excellent flame-retardant protection capability, so that the use risk brought by high-temperature working conditions is effectively resisted, and the safety of the surge protector is further ensured.

The invention provides a chip, a layout design method thereof and electronic equipment, PDIOs in an electrostatic discharge protection circuit corresponding to the chip are divided into N groups, and each group of PDIOs comprises at least one PDIO; nDIOs in the electrostatic discharge protection circuit are divided into N groups, and each group of NDIOs comprises at least one NDIO; and arranging the N groups of PDIOs and the N groups of NDIOs in a staggered manner. And through staggered arrangement, heating areas are sufficiently dispersed during electrostatic discharge, so that the thermal breakdown current capability of PDIO and NDIO is greatly improved, and the possibility of burnout of PDIO and NDIO is reduced.

The invention discloses an overvoltage protection device for a dry-type hollow shunt reactor, which belongs to the technical field of overvoltage protection of power transmission and transformation equipment, and is characterized in that when an operation overvoltage occurs in a system, a frequency absorption unit can reduce the oscillation frequency of the overvoltage, slow down the rising leading edge of the overvoltage, and solve the damage of a high-frequency component to a reactor winding; when the frequency absorption unit cannot restrain the overvoltage peak value, the overvoltage absorption unit plays a role in limiting the overvoltage peak value and enhancing the insulation level of the reactor, and through the application of the voltage monitoring conversion unit, when the reactor operates normally or the overvoltage is lower than an operation threshold value, the high-speed control switch is switched on, and the high-speed control switch is switched off. The explosion-proof separation unit is bypassed by a short circuit, and the frequency suppression absorption unit and the overvoltage absorption unit undertake the main protection task; when the monitored voltage exceeds a set threshold value or the absorption unit has a fault or thermal breakdown, the high-speed control switch is switched off, the explosion-proof separation unit is connected to the circuit, the fault unit is timely cut off, and fault extension is prevented.

The utility model relates to a high withstand voltage structure piezoresistor, which comprises two core bodies arranged up and down in a packaging structure, a partition plate is arranged between the two core bodies, the partition plate is used for transmitting heat dissipated by the core bodies, heat transfer parts are formed on two sides of the partition plate, a heat dissipation assembly is arranged on the packaging structure corresponding to the heat transfer parts, and the heat dissipation assembly is used for heat dissipation of the core bodies. The heat dissipation assembly is connected with the heat transfer part through the heat conduction plate, and heat dissipated by the core body sequentially passes through the partition plate, the heat transfer part, the heat conduction plate and the heat dissipation assembly to enter the packaging structure to be discharged. According to the piezoresistor with the high voltage-withstanding structure, an efficient heat conduction path is formed through the partition plate and the heat transfer part in combination with the heat conduction plate and the heat dissipation assembly, and heat generated by the core body is transversely conducted to the heat transfer part through the partition plate, then is transferred to the heat dissipation plate and the heat dissipation columns through the heat conduction plate and finally is discharged through the heat dissipation columns. The thermal stress accumulation and thermal breakdown risks caused by an unsmooth heat dissipation path of a traditional stacked structure are solved, the heat dissipation efficiency is improved, and long-term stable operation of the device is ensured.

The invention relates to a power supply module system, which is integrated on a mainboard, and comprises a high-speed sampling network used for acquiring input voltage, load current, temperature and battery internal resistance signals; the AI co-processing unit is deployed with a time sequence prediction model and is used for predicting a fault probability in a time window less than or equal to 5 ms in the future based on the sampling signal; the programmable protection execution array is used for executing soft turn-off or bypass operation when any fault probability exceeds an adaptive threshold value; and a self-recovery energy path comprising a step boost digital control loop for re-conducting the power stage after the fault is eliminated. According to the invention, faults such as overvoltage, overcurrent, thermal breakdown and micro short circuit are predicted in advance by less than or equal to 5 ms through the AI time sequence model, a traditional'threshold trigger 'passive response mode is broken through, and the protection action is delayed by lt; and compared with a traditional fuse / silicon controlled rectifier scheme, the fuse / silicon controlled rectifier scheme has the advantage that the hardware damage risk is obviously reduced.

Various methods and circuit arrangements for protecting power amplifiers from overvoltage are presented. According to one aspect, a protection circuit coupled to a varying supply voltage of a power amplifier controls a bias current to the power amplifier to limit power dissipation through the power amplifier. The overvoltage protection circuit detects a level of the varying supply voltage and reduces the bias current according to a linear function of the increasing supply voltage once the supply voltage reaches a programmable voltage level. A slope of the linear function can be programmable. The programmability of the voltage level and the slope can be used to control the bias current to multiple power amplifiers that operate at different times and have different requirements in terms of voltage limits and thermal breakdown. According to another aspect, a voltage-to-current converter for use in an overvoltage protection circuit is presented.

This invention discloses an overload protection method for an electric compressor controller. When the compressor speed is in the low-speed range, a dynamic compressor load protection strategy is executed. During this strategy, compressor parameters are acquired in real time. Based on the compressor load, compressor speed, and a preset phase current RMS protection threshold, the current phase current RMS protection threshold is obtained according to the current compressor load, compressor speed, and compressor speed. The current compressor phase current RMS value is compared with the protection threshold to determine whether an overload protection shutdown strategy should be triggered. This invention prioritizes overload shutdown protection before the IGBT (Integrated Geometric Transformer) begins to accumulate heat under low-speed, high-load conditions, preventing frequent overheating that could lead to IGBT thermal breakdown. This dynamic overload protection strategy offers higher accuracy and faster response, providing pre-emptive overload protection for IGBT temperature under low-speed, high-load conditions.

The invention provides a semiconductor device for improving the self-protection capability of an LDMOS (Laterally Diffused Metal Oxide Semiconductor) and a manufacturing method thereof. The device comprises a semiconductor substrate and an epitaxial layer located on the semiconductor substrate, and a first conductive type buried layer and a second conductive type buried layer located on the first conductive type buried layer are arranged in the epitaxial layer. The key point is that the second conductive type body region on the surface of the device extends deeply in the vertical direction and is in direct contact with the second conductive type buried layer below the second conductive type body region. According to the structure, a longitudinal low-impedance discharge channel is constructed between a body region and a deep buried layer, triggering of a parasitic transverse bipolar junction transistor is effectively restrained, and thermal breakdown caused by local current concentration is avoided. Experiments show that the structure significantly improves the secondary breakdown current of the device, greatly enhances the antistatic self-protection capability of the LDMOS, has good compatibility of the manufacturing process, and does not need to add an additional photomask.

This invention provides an ultra-high temperature insulation device and a long-life operation method for a solid waste-based high-temperature thermal storage system. The device comprises, from the inside out: a core rod, a thermal storage insulation layer, a gradient insulation layer, a solid isolation layer, and a shell. The core rod has a vacuum suction port inside and spiral fins on its outside. The gradient insulation layer has gradient-distributed insulation properties, and the thermal storage insulation layer comprises a high thermal conductivity ceramic fiber reinforced composite material. Through the solid waste-based gradient insulation layer design and a thermal-electric synergistic management mechanism, the insulation performance and thermal breakdown problems of the high-temperature thermal storage device under extreme operating conditions are solved, achieving long-life operation of the device.