39 results about "Polymer dielectric" patented technology

The invention relates to the technical field of microwave devices, in particular to a circular coaxial filter for annular micro-discharge verification and a preparation method of the circular coaxial filter. Comprising a filter, a coaxial stepped impedance structure is arranged in the filter, and the coaxial stepped impedance structure comprises a plurality of high-impedance structures arranged in series and a plurality of low-impedance structures arranged between the adjacent high-impedance structures at intervals; the input port, the output port and the low-impedance structure of the filter are all filled with polymer dielectric materials so as to form polymer rings through curing. The polymer ring in the middle of the filter is provided with an annular discharge gap to form a sensitive area; circumferential continuous groove arrays are formed in the two side walls of the annular discharge gap. Through groove treatment, the PTFE micro-discharge threshold value is increased to 700 W, the PI micro-discharge threshold value is increased to be larger than 2000 W, and the problems that the SEY of PTFE and PI polymers is high, the micro-discharge threshold value is low, and the micro-discharge risk is remarkably increased are solved.

The present application belongs to the technical field of polymer dielectric energy storage material, and discloses a preparation method of a full-organic small-molecule composite polymer film and a product. The preparation method comprises the following steps: mixing a mixed solution of PVDF and PMMA with a PE EU solution to form a pre-preparation solution; casting the pre-preparation solution on a substrate and heating and drying, and then heat treating in a vacuum environment to obtain the required composite polymer film. The present application also discloses the product prepared by the above preparation method. Through the present application, the problems of low discharge energy density and charge-discharge efficiency of ferroelectric-based polymer films are solved.

The application discloses a quinoline small molecule blended modified polymer dielectric material and a preparation method and application thereof, and belongs to the technical field of capacitor films. The preparation raw materials comprise quinoline derivatives, polymethyl methacrylate, styrene-methyl methacrylate copolymer, polyetherimide, polypropylene and N-methyl pyrrolidone solution, and the preparation steps comprise blending and film preparation. The blending solution or eutectic mixture is prepared through blending, and the polymer dielectric film is prepared through a flow casting method or bidirectional stretching. The prepared quinoline small molecule blended modified polymer dielectric film has excellent electrical properties, can reduce the leakage current of the polymer material, has high DC breakdown field strength, high energy storage density and low energy loss, and is easy to realize large-scale production.

The application discloses a polypropylene-based energy storage dielectric material and a preparation method and application thereof. The preparation method comprises the following steps: after a polypropylene substrate and a (meth) acrylic acid fluorine-containing ester monomer are pre-swollen in a solvent, polymerization reaction is carried out through an initiator, and post-treatment is carried out on a grafted polymer to obtain a (meth) acrylic acid fluorine-containing ester functionalized polypropylene. The application adopts a suspension polymerization method, introduces a fluorine-containing group into a polypropylene structure to induce electron cloud distribution, promotes crystalline domain aggregation to improve crystallinity, adjusts dielectric constant, loss factor, leakage current and breakdown electric field of a polymer material, so that energy storage density and efficiency of a polymer dielectric are controlled.

The invention discloses a semiconductor packaging method, which comprises the following steps of: preparing a wafer or a chip with a first rewiring layer; mounting a wafer or a chip, or the wafer or the chip and a support material on a carrier plate, carrying out plastic packaging, removing the carrier plate, and exposing the first rewiring layer; manufacturing a second rewiring layer, an electroplating metal circuit layer and a supporting frame on the first rewiring layer; and after a plurality of rewiring layers are manufactured as required, electroplating a lead frame or manufacturing solder ball bumps, and finally cutting into single packaging bodies. According to the invention, the solid support material with high modulus and low thermal expansion coefficient is embedded in the second rewiring layer, so that a local stress suppression skeleton is constructed in the packaging structure, and free shrinkage and expansion of the polymer dielectric layer in the subsequent thermal process are effectively restrained. Therefore, thermal stress generated by mismatch of thermal expansion coefficients is greatly offset, the overall bending deformation of the packaging body is fundamentally inhibited from the interior of the structure, and the overall rigidity and the anti-warping capability of the packaging body are improved.

This utility model relates to the field of electronic paper display technology, specifically to a plasma display module with a polymer dielectric coating, comprising: a first substrate and a second substrate, the second substrate being disposed opposite to the first substrate, forming a plasma display cavity between the first and second substrates, the plasma display cavity being filled with plasma particles; a pixel electrode layer is disposed on the surface of the second substrate facing the first substrate, a filter layer is disposed on the surface of the first substrate facing the second substrate, and a conductive dielectric layer is disposed on the surface of the filter layer facing the second substrate; a polymer dielectric coating is disposed on the surface of the conductive dielectric layer facing the second substrate or the surface of the pixel electrode layer facing the first substrate. The polymer dielectric coating in this utility model possesses the characteristics of strong vertical conductivity and weak horizontal conductivity, which can effectively reduce the oblique electric field and help particles move orderly between the upper and lower substrates, thereby eliminating image retention.

A capacitor at nanometer level and a resulting nanodevice such as a sensor are provided. The nanodevice includes a substrate, and a first 2D material layer disposed over the substrate and comprising a 2D material and being electrically conductive. The nanodevice further includes a polymeric nanoporous dielectric layer (NDL) disposed on the first 2D material layer. The polymeric NDL comprises a polymer having a crystalline structure and having lamellae substantially normal to a plane of the first 2D material. A conductive material layer is disposed on the polymeric NDL. The conductive material layer comprises a second 2D material layer or comprises a different electrically conductive material. The first 2D material, the polymeric NDL, and the conductive material layer are configured to provide a capacitor structure at a nanometer level. A method of making the capacitor or the nanodevice, and a method of using the same are also provided.

The invention discloses a board-level packaging method. The method comprises the following steps: preparing a chip with a first rewiring layer; mounting the chip or the chip and the support material on a carrier plate, performing plastic packaging, then removing the carrier plate, and exposing the first rewiring layer; manufacturing a second rewiring layer, an electroplating metal circuit layer and a supporting frame on the first rewiring layer; and after a plurality of rewiring layers are manufactured as required, electroplating a lead frame or manufacturing solder ball bumps, and finally cutting into single packaging bodies. According to the invention, the solid support material with high modulus and low thermal expansion coefficient is embedded in the second rewiring layer, so that a local stress suppression skeleton is constructed in the packaging structure, and free shrinkage and expansion of the polymer dielectric layer in the subsequent thermal process are effectively restrained. Therefore, thermal stress generated by mismatch of thermal expansion coefficients is greatly offset, the overall bending deformation of the packaging body is fundamentally inhibited from the interior of the structure, and the overall rigidity and the anti-warping capability of the packaging body are improved.

The invention discloses an organic donor-acceptor charge transfer eutectic self-supporting film, a polymer self-supporting film, a flexible transistor sensor thereof and a preparation method of the flexible transistor sensor. The sensor comprises an interdigital electrode, a semiconductor layer, a dielectric layer and the like, the semiconductor layer is an organic donor-acceptor charge transfer eutectic film, the dielectric layer is a polymer film, and the semiconductor layer and the dielectric layer are both prepared by a'water-solution-air 'interface film forming method; the preparation method of the sensor comprises the following steps: preparing the interdigital electrode on the substrate, spreading and volatilizing a mixed solution containing an organic donor and an organic acceptor on the water surface, and forming a uniform organic eutectic semiconductor layer on the surface of the interdigital electrode; and then, forming a polymer dielectric layer on the semiconductor layer by using the polymer solution through the same interface method, and finally preparing the gate electrode. According to the invention, various self-supporting single-crystal, polycrystal and amorphous films can be obtained, the dependence of a traditional spin-coating method on a substrate is overcome, and a novel semiconductor material for flexible sensing and a sensing mechanism are developed.

The application discloses a self-powered artificial optical electric synapse with selective detection function and a preparation method thereof, and sequentially grows a polymer dielectric layer and two different ultrathin semiconductor light response layers on a SiO2 / Si substrate, wherein the upper ultrathin semiconductor light response functional layer is semi-covered on the lower ultrathin semiconductor light response layer to form an asymmetric heterojunction, then gold films are transferred to the lower and upper semiconductor light response functional layers as source and drain electrodes by using a non-invasive gold film transfer process, and the preparation of the self-powered artificial optical electric synapse with selective detection function is completed. The self-powered optical electric synapse with selective detection function can selectively detect and process ultraviolet light without any voltage by coupling photovoltaic effect and interface charge capture behavior, and has the ability of wide spectrum detection under the condition of applying voltage, and can simulate the perception and signal processing function of the retina.

This invention relates to the field of polymer dielectric materials and discloses a cyclic olefin copolymer / anthracene composite dielectric film for high-temperature energy storage, comprising 100 parts by weight of a cyclic olefin copolymer and 0.2 to 1.0 parts by weight of anthracene. The anthracene is uniformly dispersed in the amorphous network interstices of the cyclic olefin copolymer, utilizing the energy difference between their lowest unoccupied molecular orbitals to construct deep trap sites. By capturing free carriers injected at the electrode interface under high temperature and strong electric field conditions, electron migration is restricted, thereby blocking leakage conduction paths within the bulk phase of the material. This invention effectively reduces Joule heat accumulation during charge transport, improves the high-temperature withstand voltage and insulation reliability of the film, while maintaining relatively low dielectric loss. This all-organic blend system avoids local electric field distortion caused by inorganic filler agglomeration, and the preparation process is simple and mild, facilitating large-scale engineering applications.

This invention relates to the field of polymer dielectric technology and discloses a method for preparing a polyimide film, comprising the following steps: (1) alicyclic dianhydride monomer and an ortho-side-group aromatic diamine monomer undergo a polycondensation reaction in an organic solvent to obtain a precursor solution; (2) the precursor solution is formed into a film, and then dried and subjected to an imidization reaction to obtain a polyimide film; the imidization reaction is carried out under vacuum conditions, and the imidization reaction is a programmed temperature rise reaction, specifically: holding at 180-210℃ for 1-2 h, then raising the temperature to 240-260℃ and holding for 1-2 h, and continuing to raise the temperature to T and holding for 0.5-1 h; wherein, T = T g -t,T g The glass transition temperature of the polymer is 10℃≤t≤20℃. The polyimide film prepared by this invention exhibits high insulation and heat resistance properties, allowing for energy storage applications at temperatures up to 300℃.

A bonded assembly includes a first memory die including a first alternating stack of first insulating layers and first electrically conductive layers, first memory stack structures vertically extending through the first alternating stack, first metal interconnect structures embedded within first memory-die inorganic dielectric layers, and first memory-die copper bonding pads embedded within a first polymer dielectric layer, and a second memory die including a second alternating stack of second insulating layers and second electrically conductive layers, second memory stack structures vertically extending through the second alternating stack, second metal interconnect structures embedded within second memory-die inorganic dielectric layers, and second memory-die copper bonding pads embedded within a second polymer dielectric layer.

Embodiments for a method of forming a circuit bearing structure are provided. The method includes depositing a layer of thermoplastic particles on a surface, pressing and heating the layer of thermoplastic particles to create a contiguous thermoplastic film, and forming one or more circuit structures in the contiguous thermoplastic film.

The invention discloses a method for improving signal drift suppression performance of a flexible ion electronic sensor through surface treatment. Comprising the following steps: preparing a 3-aminopropyltriethoxysilane solution; performing plasma etching treatment on the indium tin oxide conductive polyester film; the indium tin oxide conductive polyester film subjected to surface plasma etching treatment is soaked in a 3-aminopropyltriethoxysilane solution, and the indium tin oxide conductive polyester film subjected to surface treatment is obtained; and assembling a dielectric layer and a lower electrode layer by taking the indium tin oxide conductive polyester film subjected to surface treatment as an upper electrode layer to obtain the flexible ion electronic sensor. The method disclosed by the invention is simple in process, easy to scale, low in cost and applicable to various polymer dielectric material systems.

The invention discloses a PAN polymer dielectric composite material film, a preparation method thereof and a supercapacitor, and belongs to the technical field of supercapacitors. The preparation method of the PAN polymer dielectric composite material film comprises the following steps: dissolving a barium source and a calcium source in a mixed solvent containing acetic acid, acetylacetone and ethanol, heating, stirring and dissolving, sequentially adding a zirconium source ethanol solution and a titanium source, stirring until the solution is clarified, adding polyvinylpyrrolidone, and uniformly stirring to obtain the PAN polymer dielectric composite material film. Heating and stirring to form a stable barium-calcium-zirconium-titanium oxide precursor solution; carrying out electrostatic spinning on the barium-calcium-zirconium-titanium oxide precursor solution, and sintering the obtained fibers to remove organic matters, so as to obtain one-dimensional barium-calcium-zirconium-titanium oxide nanofibers; the preparation method comprises the following steps: dispersing barium-calcium-zirconium-titanium oxide nanofibers in N, N-dimethylformamide, adding PAN powder, stirring to form a suspension, pouring, heating and volatilizing a solvent to obtain a primary film, and carrying out hot pressing, cooling and cutting to obtain the dielectric composite film.

The invention discloses a polymer-filled single-ridge waveguide structure for medium micro-discharge verification, and belongs to the technical field of microwave devices. The structure comprises a single-ridge waveguide shell, a cavity is formed in the single-ridge waveguide shell, and a protruding ridge structure is arranged in the cavity; the polymer dielectric sheet is arranged in the cavity, and a sensitive gap is formed between the polymer dielectric sheet and the ridge structure; a micro trap structure is arranged on the surface of the polymer dielectric sheet and comprises a plurality of discrete micropores. The sensitive gap between the ridge structure of the single-ridge waveguide shell and the polymer dielectric sheet forms an electric field concentration area for inducing micro discharge; a micro trap structure is formed by discrete micropores in the surface of the polymer dielectric sheet and is used for inhibiting secondary electron emission. The structure provides a verification platform for micro-discharge effect research of organic media in waveguide devices.

The invention discloses a preparation method of an all-organic PF / PC composite dielectric film containing a molecular semiconductor. Belongs to the technical field of energy storage materials. The invention aims to improve the breakdown strength of the polymer medium and enhance the energy storage density of the polymer medium. According to the invention, PC particles and PF are dissolved in tetrahydrofuran to prepare a mixed solution, the PF / PC dielectric film is prepared by a method of drying after film coating, and the specific mechanism is that introduction of a molecular semiconductor PF forms a molecular trap with PC to inhibit transport of carriers, and hydrogen bonds are formed between fluorine atoms of PF and hydrogen atoms of PC to effectively inhibit migration of charge carriers, so that the performance of the PF / PC dielectric film is improved, and the performance of the PF / PC dielectric film is improved. Therefore, the insulating property of the polymer dielectric material is enhanced by inhibiting conduction, and the breakdown strength is finally improved. The invention can be widely applied to modern electronic equipment, 5G communication, electric automobiles, electromagnetic weapons and power systems.

The invention relates to the technical field of polymer dielectric preparation, in particular to a high-temperature-resistant polyimide dielectric film and a preparation method and application thereof. The conjugated structure of the high-temperature-resistant polyimide dielectric film provided by the invention mainly adopts out-of-plane orientation or in-plane orientation. The polyimide dielectric film still has excellent electrical insulation performance and energy storage performance under the condition of high temperature.

The application discloses a polymer dielectric containing a bicyclo[1.1.1]pentane structure and a preparation method thereof. By addition reaction of [1.1.1]spiropropyl with mercapto, a monomer of formula I with various structures can be efficiently prepared through subsequent simple functional group conversion. The monomer containing a "sulfone-bicyclo[1.1.1]pentane" structural element shown in formula I is homopolymerized or copolymerized with other acrylate monomers to obtain a polymer, which is a dielectric material with high dielectric constant, low dielectric loss and high energy storage density. The connection of bicyclo[1.1.1]pentane and sulfone weakens the dipole-dipole interaction, reduces the dielectric material relaxation loss and improves the solubility of the polymer in low-polarity solvents. The copolymerization of the monomer of formula I with commercial acrylate monomers obtains a polymer dielectric with high charge and discharge efficiency (>95%).

The application relates to the fields of dielectric materials and energy storage materials, and discloses a high-temperature dielectric polymer as well as a preparation method and application thereof, the preparation method comprising the following steps: subjecting 5-norbornene-2,3-diformamide to a reduction reaction through lithium aluminum hydride to obtain a 5-norbornene-pyrrolidine intermediate; placing the intermediate and p-toluenesulfonyl chloride in a chloroform solution, and adding triethylamine dropwise to react; obtaining norbornene pyrrolidine benzene sulfone monomers; subjecting the monomers to ring-opening metathesis polymerization reaction through Grubbs catalyst to obtain poly-norbornene pyrrolidine benzene sulfone; placing the poly-norbornene pyrrolidine benzene sulfone and p-methylbenzenesulfonyl hydrazide in a toluene solution, and subjecting to hydrogenation reaction to obtain the target polymer. The polymer of the application only needs to be applied with a low electric field intensity of 350 MV / m at 150 DEG C, and the electric polarization energy storage density (charge and discharge efficiency > 90%) of about 10.8 J / cm 3 can be obtained, which exceeds existing high-temperature polymer dielectric materials.

This invention discloses a low-frequency flexible microwave absorbing composite material based on the localized field enhancement effect and its preparation method, relating to the field of electromagnetic protection technology. It aims to solve the problems of large thickness and difficult conformal design of complex curved surfaces in traditional microwave absorbing structures at low frequencies. The composite material comprises, from top to bottom: a flexible metasurface patterned layer with specific sheet resistance and topological array, a flexible polymer dielectric layer dispersed with modified magnetic filler, and a bottom total reflection layer. This invention utilizes the strong localized electromagnetic field excited by the metasurface to focus and penetrate into the dielectric layer, amplifying the dissipation potential of the magnetic filler; simultaneously, the bulk loss of the dielectric layer generates reverse damping on the metasurface resonance, thus broadening the bandwidth. This synergistic mechanism breaks the quarter-wavelength limitation. The preparation method includes pattern layer molding, dielectric layer mixing and curing, and overall composite molding. This invention achieves high-efficiency low-frequency broadband absorption at a single-layer subwavelength thickness, while also possessing excellent flexibility, making it highly suitable for stealth on complex curved surfaces with total reflection boundaries.

The utility model provides a variable-temperature clamp of a polymer dielectric film withstand voltage tester, which can simulate different environmental conditions including temperature, humidity and the like, ensure the accuracy and the reliability of a test result, reduce the cost, improve the efficiency and reduce the loss caused in an experiment process. The electric heater comprises an insulating shell which is provided with an insulating cover, and is characterized in that a heating unit and a temperature sensing and controlling unit are arranged in the shell and are in electric control connection with each other; the insulating shell is provided with a discharge valve; the insulating cover is provided with an accurate hole.

The invention discloses a high-dielectric high-temperature-resistant poly (4-methyl-1-pentene) dielectric film for a capacitor and a preparation method and application thereof, and belongs to the technical field of polymer film capacitor materials. The invention aims to solve the problems of low dielectric constant, poor temperature resistance, small film preparation size and mutual restriction of dielectric constant and breakdown strength of the existing polymer dielectric. The invention provides a method for preparing an EXO-3, 6-epoxy-1, 2, 3, 6-tetrahydrophthalic anhydride grafted poly (4-methyl-1-pentene) film by using poly (4-methyl-1-pentene) resin particles, EXO-3, 6-epoxy-1, 2, 3, 6-tetrahydrophthalic anhydride and dicumyl peroxide and combining a solution suspension method with a melt casting extrusion and uniaxial stretching traction method, and the method is used for preparing the EXO-3, 6-epoxy-1, 2, 3, 6-tetrahydrophthalic anhydride grafted poly (4-methyl-1-pentene) film. When the charge-discharge efficiency is greater than or equal to 90% at 150 DEG C, the discharge energy density reaches 5.22 J / cm < 3 >.

The wheeled robot driven based on the corona discharge effect and the electrostatic effect comprises a cylindrical rotor frame (8) and vehicle frames (2), the vehicle frames (2) are arranged at the two ends of the rotor frame (8) in a clamped mode, and front wheels (6) and rear wheels (1) in pairs are arranged on the front portions and the rear portions of the vehicle frames (2) correspondingly; a rectangular frame formed by two transverse frames and two longitudinal frames of the frame (2) clamps the rotor frame (8), gaps exist between the two transverse frames and the rotor frame (8), and the two longitudinal frames clamp the two ends of the rotor frame (8); needle-shaped sharp tungsten needle electrodes (7) are inserted into the two transverse frames; and the side surface of the rotor frame (8) is provided with a thin film (13) made of a polymer dielectric material. Corona is generated through kilovolt high-voltage static electricity, charged ions are transferred through the generated corona between the electrode and the rotor, under the same power, the voltage is greatly improved, the current is greatly reduced, then the loss is greatly reduced, and the purpose of almost no heating is achieved.

A bonded assembly includes a first memory die including a first alternating stack of first insulating layers and first electrically conductive layers, first memory stack structures vertically extending through the first alternating stack, first metal interconnect structures embedded within first memory-die inorganic dielectric layers, and first memory-die copper bonding pads embedded within a first polymer dielectric layer, and a second memory die including a second alternating stack of second insulating layers and second electrically conductive layers, second memory stack structures vertically extending through the second alternating stack, second metal interconnect structures embedded within second memory-die inorganic dielectric layers, and second memory-die copper bonding pads embedded within a second polymer dielectric layer.

The utility model belongs to the technical field of electronic materials and devices, and particularly relates to an N2200-based top gate bottom contact polymer field effect transistor, which comprises a substrate, and an organic semiconductor layer, a polymer dielectric layer and a polymer packaging layer which are sequentially arranged on the substrate and are made of N2200, one end of the organic semiconductor layer is electrically connected with a source electrode, and the other end is electrically connected with a drain electrode; a grid electrode is arranged between the polymer dielectric layer and the polymer packaging layer, and the grid electrode is electrically connected with the polymer dielectric layer; and the organic semiconductor layer is made of a material of poly (naphthalene diimine)-bithiophene P (DNI2OD-T2), namely N2200. According to the utility model, N2200 is used as the organic semiconductor layer, nickel and gold are evaporated on the substrate to serve as the source and drain electrodes, polymethyl methacrylate is used as the dielectric layer, the top-gate bottom-contact high-performance transistor is prepared, and meanwhile, the packaging layer is added on the surface of the organic field effect transistor by a simple spin-coating method, so that the surface defects of a packaging film can be effectively reduced, and the reliability of the organic field effect transistor is improved. The operation is simple and the complexity is reduced.

The invention relates to the technical field of dielectric materials, in particular to a modified g-C3N4 / PEI composite film and a preparation method and application thereof. The preparation method comprises the following steps: modifying g-C3N4 in a strong oxidizing acid solution to obtain modified g-C3N4; the modified g-C3N4 is of a porous structure, and the surface of the modified g-C3N4 contains-OH and-COOH; and dispersing the modified g-C3N4 into a PEI dissolving solution, carrying out film formation on the obtained dispersion solution, and curing to obtain the modified g-C3N4 / PEI composite film. According to the modified g-C3N4 / PEI composite film provided by the invention, the dielectric constant is remarkably enhanced while high breakdown strength of a polymer dielectric medium is maintained, so that collaborative optimization of high energy storage density and high charge-discharge efficiency is obtained.

The present invention is directed to eyectrochromic, supercapacitor yarns and the related fabrics. An electrochromic yarn formed by two interwind threads has been invented. The yarn is electrically isolated by a transparent, uncolored polymer. Each thread is the superposition of three concentric layers. The most internal one, the core, has the function of support and / or conductive layer, the second one is the eiectrochromic layer containing conductive nanoparticies, the third layer is a polymer dielectric blend. The yarns described above allows to generate electrochromic fabrics in which the colour can be varied by the application of small electric voltages fed by a battery with variable power supply controlled by a microprocessor connected to a smartphone via Bluetooth technology. A specific application on the smartphone allows to change the voltage supply to the fabrics, in order to get the desired chromatic change.

The invention belongs to the field of friction nanometer materials, and particularly relates to a dielectric film for TENG, a preparation method of the dielectric film and a friction nanometer generator. According to the scheme, an inorganic ceramic material with a high heat conductivity coefficient, a high dielectric coefficient and a wide forbidden band is used for carrying out surface modification on a polymer dielectric film, and the distribution of a modified layer is strictly controlled, so that the modified layer is distributed in a spiral line shape or a homocentric-square-shaped pattern shape. The dielectric film prepared by the invention has high thermal conductivity and corona resistance, and can meet the material requirements of high-performance and high-durability TENG. Due to the special distribution of the dielectric film surface modification layer, the air breakdown self-extinguishing effect can be achieved when the dielectric film surface modification layer is applied to TENG. When air breakdown causes reverse polarity charge accumulation on the surface of the dielectric medium, a reverse electric field is spontaneously established, and air breakdown is promoted to be terminated, so that the charge behavior at the dielectric medium-air interface is regulated and controlled. According to the scheme, the output performance of the TENG is improved while the durable life of the material is prolonged, and the performance is very excellent.