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136 results about "Polymer dielectric" patented technology

Polymer dielectric medium with low dielectric constant and low loss and preparation method of polymer dielectric medium

The invention discloses a polymer dielectric medium with low dielectric constant and low loss and a preparation method of the polymer dielectric medium. The polymer dielectric medium comprises the following raw materials: 50-60% of epoxy resin system, and 40-50% of mixed boron nitride nanoparticles, wherein the mixed boron nitride nanoparticle is a mixture of a boron nitride nanotube and a boron nitride nanotube; the epoxy resin system is formed by 100phr of epoxy resin E-51, 85phr of methyl hexahydrophthalic anhydride and 1phr of benzyl dimethylamine in a mixing manner. The thermal breakdown voltage of the polymer dielectric medium is significantly improved by the polymer dielectric material with high heat conductivity and high electric breakdown, the service life is prolonged, the dielectric constant and loss and the heat expansion coefficient are reduced, the mechanical strength and the tenacity are improved, the highest heat conductivity can be up to 5.26W/mK, the volume resistivity is about 1014ohm.cm, the thermal breakdown voltage is about 2-3kV/mm higher than that of the similar heat-conducting polymer dielectric medium, and the dielectric constant and the loss are a little lower than those of pure resin.
Owner:XIAN UNIV OF SCI & TECH

Lithium secondary battery with metal fluoride as positive electrode material

The invention which discloses a lithium secondary battery with a metal fluoride as a cathode material belongs to the technical field of environmentally friendly secondary batteries. The lithium secondary battery is characterized in that: the lithium secondary battery comprises a positive electrode, a negative electrode, a membrane, an electrolyte or a polymer dielectric, a current collector, a positive electrode shell, and a negative electrode shell; the membrane or the polymer dielectric immersed with the electrolyte separates the positive electrode and the negative electrode; the positive electrode material which is coated on the current collector is connected with the positive electrode shell of the battery; the negative electrode is connected with the negative electrode shell of the battery; the positive electrode shell and the negative electrode shell mutually insulate; the positive electrode comprises the metal fluoride, a conductive agent, a binder, and the current collector; and the positive electrode material is the metal fluoride, and the chemical composition of the positive electrode material is MFa(H2O)b, wherein a is equal to or less than 3 and equal to or more than 1, and b which is equal to or less than 4 and equal to or more than 0 is an integer. The lithium secondary battery of the present invention has the advantages of simple preparation method, easily realized reaction condition, easily available raw material, low energy consumption in the preparation process, good security, and good electrochemical performance.
Owner:BEIJING INSTITUTE OF TECHNOLOGYGY

Two-dimensional ordered organic semiconductor composite nano membrane as well as special substrate and preparation method thereof

The invention discloses two-dimensional ordered organic semiconductor compound nanometer film and the special-purpose substrate thereof, and the preparation method thereof. Polymer dielectric ultra film provided by the invention is obtained by rubbing or stretching the polymer. The provided two-dimensional ordered organic semiconductor compound nanometer film is formed by compounding the polymer dielectric ultra film and the organic semiconductor compound nanometer film. Through adjusting and controlling the orientation degree, the thickness, the heating temperature, the solution spin coating speed and the vacuum evaporation coating speed of the pre orientated polymer dielectric ultra film, the two-dimensional ordered organic semiconductor compound nanometer film which can meet the ordered structure and the film thickness of different demands is prepared. The preparation method is simple and feasible, the efficiency is high, the cost is low, the performance of the thin film can be greatly improved, the stability is high, and the two-dimensional ordered organic semiconductor compound nanometer film can be used for the fields such as sensing material, electrical conduction material and electro-optical transformation material, etc.
Owner:INST OF CHEM CHINESE ACAD OF SCI

Composite flexible pressure sensor based on bionic microstructure and preparation method of composite flexible pressure sensor

The invention provides a composite flexible pressure sensor based on a bionic microstructure and a preparation method of the composite flexible pressure sensor. The pressure sensor is divided into a capacitor layer, a common substrate layer and a piezoresistive layer from top to bottom. The capacitor layer comprises a protective film layer, a first electrode layer, a dielectric layer and a secondelectrode layer from top to bottom; the piezoresistive layer comprises a transverse electrode layer, a longitudinal electrode layer, a dielectric layer, a staggered electrode layer and a substrate film from top to bottom; the dielectric layer adopts a double-layer double-stage dome bionic microstructure and is made of a polymer with adjustable elasticity modulus, which is the same as that of the common substrate layer. The dielectric layer adopts a single-layer two-stage dome bionic microstructure, and is made of a nanoscale conductive composite material prepared by filling a flexible polymerwith multi-walled carbon nanotubes (MWCNT) and carbon black (CB); and the bottom staggered electrode layer adopts a multi-stage S-shaped interconnected wire structure. The composite flexible pressuresensor has the characteristics of relatively large detection range, high sensitivity, good stability and strong anti-interference performance.
Owner:JILIN UNIV

Silicon substrate air-impermeability sealing structure and manufacturing method thereof

The invention discloses a silicon substrate air-impermeability sealing structure and a manufacturing method thereof. The sealing structure comprises a silicon substrate provided with a complete through hole filled with first metal, the surface of the silicon substrate is passivated, and the back face of the silicon substrate is provided with a bonding pad. The front face of the silicon substrate is filled with a polymer dielectric layer provided with an opening which is filled with second metal. The upper surface of the polymer dielectric layer is provided with a metal wiring layer and an insulating layer. The second metal wiring layer and the second metal are in contact to form electric connection. A chip is mounted on the upper surface of a second insulating layer. A pin of the chip is electrically connected with the second metal wiring layer through a bonding wire, and the second metal wiring layer and the second metal are in direct contact to form electric connection. The second metal and the first metal are in direct contact to form electric connection. A cover plate and the silicon substrate are sealed together through sealing materials to form a cavity. The silicon substrate air-impermeability sealing structure and the manufacturing method thereof can effectively reduce the packaging size, improve structural strength, and simplify the production technology.
Owner:58TH RES INST OF CETC

Method and structure for improving working performance of pentacene organic field effect transistor

The invention discloses a method for improving the working performance of a pentacene organic field effect transistor, and the method comprises the steps of setting an n-type semiconductor film transition layer between a polymer medium and pentacene in an organic field effect transistor device which is of a gate electrode / insulating layer / polymer medium film / pentacene / source and drain electrode structure, wherein the thickness of the n-type semiconductor transition layer is 1-100 nm; reducing the hole barrier height at an interface of pentacene and a charge trapping medium through the inducedelectrons at an interface in the n-type semiconductor transition layer so as to reduce a programming / erasing working voltage of the pentacene organic semiconductor transistor effectively; preventing the positive charges (holes) captured in the polymer dielectric film from escaping into a pentacene film through a positively charged space charge region formed by the ionization donors in the organicsemiconductor transition layer, so that the programming / erasing reliability and the data retention capability of the pentacene organic semiconductor transistor device are improved, and the working performance of the pentacene organic field effect transistor is improved.
Owner:NANJING UNIV

Silicon dioxide/magnesium oxide/polymer dielectric and hydrophobic composite material and preparation method

InactiveCN107955307AEnhanced interface polarization effectTaking into account thermalOperabilityInterfacial polarization
The invention relates to the technical field of nanocomposite materials and aims to provide a silicon dioxide/magnesium oxide/polymer dielectric and hydrophobic composite material and a preparation method. The dielectric and hydrophobic material is prepared from polymethyl methacrylate as a polymer matrix and magnesium oxide coated with a silicon dioxide shell as a filling material by blending andtape casting, wherein the filling material accounts for 10%-40% of the total mass of the dielectric and hydrophobic material and adopts silicon dioxide as the shell and flaky magnesium oxide as the core. The silicon dioxide/magnesium oxide/polymer dielectric and hydrophobic composite material and the preparation method have the following advantages: interfacial interaction areas between inorganicparticles as well as between the inorganic particles and a polymer can be increased, the interfacial polarization effect is enhanced, the dielectric constant of the composite material is increased, and the surface hydrophobicity is improved. The preparation process is simple, and the method is high in operability and repeatability. Dielectric, thermal and hydrophobic properties of the composite material can be regulated and controlled by regulating the adding content of inorganic filler, and the composite material can be applied to manufacturing of capacitors, electrowetting displays and other devices and has broad development prospect.
Owner:ZHEJIANG UNIV

High-temperature-resistant and high-dielectric polymer-based composite dielectric material as well as preparation method and application thereof

The invention discloses a high-temperature-resistant and high-dielectric polymer-based composite dielectric material as well as a preparation method and application thereof, and belongs to the technical field of polymer dielectric materials. According to the high-temperature-resistant and high-dielectric polymer-based composite dielectric material disclosed by the invention, a thermoplastic polymer is used as a base material, and inorganic filler with a dual-core-shell structure is uniformly distributed in the base material. The inorganic filler with the dual-core-shell structure is formed byperforming surface modification on inorganic particles through a first cross-linking agent and then performing cross-linking through a second cross-linking agent. The composite dielectric material provided by the invention not only has excellent heat resistance, but also has high dielectric properties, can be applied to the fields of microelectronics, aerospace, integrated circuits, high-efficiency energy storage elements and the like needing high-temperature environments, and further widens the application range of the dielectric material. The preparation method is simple, conditions are mild, and raw materials are easy to obtain.
Owner:YANCHENG INST OF TECH
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