139 results about "Polymer dielectric" patented technology

The present invention adds one or more thick layers of polymer dielectric and one or more layers of thick, wide metal lines on top of a finished semiconductor wafer, post-passivation. The thick, wide metal lines may be used for long signal paths and can also be used for power buses or power planes, clock distribution networks, critical signal, and re-distribution of I / O pads.

A grating coupled surface plasmon resonance optical modulator is disclosed. A electro-optic polymer dielectric is deposited on the metallic surface of a diffraction grating to provide a metal / dielectric interface. A surface plasmon will propagate at the metal / dielectric interface in a resonant condition, e.g., when the metal surface is illuminated by transverse magnetic (TM) polarized light of the appropriate wavelength, angle of incidence and phase velocity. In the present invention, phase velocity is controlled by the diffraction grating. A transparent electrode deposited on the electro-optic layer allows an electrical potential to be applied across the electro-optic polymer. The applied electrical potential (voltage) changes the index of refraction of the electro-optic polymer, thereby disrupting the resonant condition to produce an optically detectable change in reflectance of incident light from the metal layer. The disclosed grating coupled surface plasmon resonance optical modulator may be configured as an electronically or optically addressable array.

The present invention adds one or more thick layers of polymer dielectric and one or more layers of thick, wide metal lines on top of a finished semiconductor wafer, post-passivation. The thick, wide metal lines may be used for long signal paths and can also be used for power buses or power planes, clock distribution networks, critical signal, and re-distribution of I / O pads.

An integrated circuit includes isolation capacitors which include a silicon dioxide dielectric layer and a polymer dielectric layer over the layer of silicon dioxide. The silicon dioxide dielectric layer and the polymer dielectric layer extend across the integrated circuit. Top plates of the isolation capacitors have bond pads for wire bonds or bump bonds. Bottom plates of the isolation capacitors are connected to components of the integrated circuit. Other bond pads are connected to components in the integrated circuit through vias through the silicon dioxide dielectric layer and the polymer dielectric layer.

A grating coupled surface plasmon resonance optical modulator is disclosed. A electro-optic polymer dielectric is deposited on the metallic surface of a diffraction grating to provide a metal / dielectric interface. A surface plasmon will propagate at the metal / dielectric interface in a resonant condition, e.g., when the metal surface is illuminated by transverse magnetic (TM) polarized light of the appropriate wavelength, angle of incidence and phase velocity. In the present invention, phase velocity is controlled by the diffraction grating. A transparent electrode deposited on the electro-optic layer allows an electrical potential to be applied across the electro-optic polymer. The applied electrical potential (voltage) changes the index of refraction of the electro-optic polymer, thereby disrupting the resonant condition to produce an optically detectable change in reflectance of incident light from the metal layer. The disclosed grating coupled surface plasmon resonance optical modulator may be configured as an electronically or optically addressable array.

The invention discloses a polymer dielectric medium with low dielectric constant and low loss and a preparation method of the polymer dielectric medium. The polymer dielectric medium comprises the following raw materials: 50-60% of epoxy resin system, and 40-50% of mixed boron nitride nanoparticles, wherein the mixed boron nitride nanoparticle is a mixture of a boron nitride nanotube and a boron nitride nanotube; the epoxy resin system is formed by 100phr of epoxy resin E-51, 85phr of methyl hexahydrophthalic anhydride and 1phr of benzyl dimethylamine in a mixing manner. The thermal breakdown voltage of the polymer dielectric medium is significantly improved by the polymer dielectric material with high heat conductivity and high electric breakdown, the service life is prolonged, the dielectric constant and loss and the heat expansion coefficient are reduced, the mechanical strength and the tenacity are improved, the highest heat conductivity can be up to 5.26W / mK, the volume resistivity is about 1014ohm.cm, the thermal breakdown voltage is about 2-3kV / mm higher than that of the similar heat-conducting polymer dielectric medium, and the dielectric constant and the loss are a little lower than those of pure resin.

A microscale selective laser sintering (μ-SLS) that improves the minimum feature-size resolution of metal additively manufactured parts by up to two orders of magnitude, while still maintaining the throughput of traditional additive manufacturing processes. The microscale selective laser sintering includes, in some embodiments, ultra-fast lasers, a micro-mirror based optical system, nanoscale powders, and a precision spreader mechanism. The micro-SLS system is capable of achieving build rates of at least 1 cm3 / hr while achieving a feature-size resolution of approximately 1 μm. In some embodiments, the exemplified systems and methods facilitate a direct write, microscale selective laser sintering μ-SLS system that is configured to write 3D metal structures having features sizes down to approximately 1 μm scale on rigid or flexible substrates. The exemplified systems and methods may operate on a variety of material including, for example, polymers, dielectrics, semiconductors, and metals.

The invention which discloses a lithium secondary battery with a metal fluoride as a cathode material belongs to the technical field of environmentally friendly secondary batteries. The lithium secondary battery is characterized in that: the lithium secondary battery comprises a positive electrode, a negative electrode, a membrane, an electrolyte or a polymer dielectric, a current collector, a positive electrode shell, and a negative electrode shell; the membrane or the polymer dielectric immersed with the electrolyte separates the positive electrode and the negative electrode; the positive electrode material which is coated on the current collector is connected with the positive electrode shell of the battery; the negative electrode is connected with the negative electrode shell of the battery; the positive electrode shell and the negative electrode shell mutually insulate; the positive electrode comprises the metal fluoride, a conductive agent, a binder, and the current collector; and the positive electrode material is the metal fluoride, and the chemical composition of the positive electrode material is MFa(H2O)b, wherein a is equal to or less than 3 and equal to or more than 1, and b which is equal to or less than 4 and equal to or more than 0 is an integer. The lithium secondary battery of the present invention has the advantages of simple preparation method, easily realized reaction condition, easily available raw material, low energy consumption in the preparation process, good security, and good electrochemical performance.

The present invention adds one or more thick layers of polymer dielectric and one or more layers of thick, wide metal lines on top of a finished semiconductor wafer, post-passivation. The thick, wide metal lines may be used for long signal paths and can also be used for power buses or power planes, clock distribution networks, critical signal, and re-distribution of I / O pads.

A multilayer dielectric structure is formed by vacuum depositing two-dimensional matrices of nanoparticles embedded in polymer dielectric layers that are thicker than the effective diameter of the nanoparticles, so as to produce a void-free, structured, three-dimensional lattice of nanoparticles in a polymeric dielectric material. As a result of the continuous, repeated, and controlled deposition process, each two-dimensional matrix of nanoparticles consists of a layer of uniformly distributed particles embedded in polymer and separated from adjacent matrix layers by continuous polymer dielectric layers, thus forming a precise three-dimensional nanoparticle matrix defined by the size and density of the nanoparticles in each matrix layer and by the thickness of the polymer layers between them. The resulting structured nanodielectric exhibits very high values of dielectric constant as well as high dielectric strength.

The invention discloses two-dimensional ordered organic semiconductor compound nanometer film and the special-purpose substrate thereof, and the preparation method thereof. Polymer dielectric ultra film provided by the invention is obtained by rubbing or stretching the polymer. The provided two-dimensional ordered organic semiconductor compound nanometer film is formed by compounding the polymer dielectric ultra film and the organic semiconductor compound nanometer film. Through adjusting and controlling the orientation degree, the thickness, the heating temperature, the solution spin coating speed and the vacuum evaporation coating speed of the pre orientated polymer dielectric ultra film, the two-dimensional ordered organic semiconductor compound nanometer film which can meet the ordered structure and the film thickness of different demands is prepared. The preparation method is simple and feasible, the efficiency is high, the cost is low, the performance of the thin film can be greatly improved, the stability is high, and the two-dimensional ordered organic semiconductor compound nanometer film can be used for the fields such as sensing material, electrical conduction material and electro-optical transformation material, etc.

The invention provides a composite flexible pressure sensor based on a bionic microstructure and a preparation method of the composite flexible pressure sensor. The pressure sensor is divided into a capacitor layer, a common substrate layer and a piezoresistive layer from top to bottom. The capacitor layer comprises a protective film layer, a first electrode layer, a dielectric layer and a secondelectrode layer from top to bottom; the piezoresistive layer comprises a transverse electrode layer, a longitudinal electrode layer, a dielectric layer, a staggered electrode layer and a substrate film from top to bottom; the dielectric layer adopts a double-layer double-stage dome bionic microstructure and is made of a polymer with adjustable elasticity modulus, which is the same as that of the common substrate layer. The dielectric layer adopts a single-layer two-stage dome bionic microstructure, and is made of a nanoscale conductive composite material prepared by filling a flexible polymerwith multi-walled carbon nanotubes (MWCNT) and carbon black (CB); and the bottom staggered electrode layer adopts a multi-stage S-shaped interconnected wire structure. The composite flexible pressuresensor has the characteristics of relatively large detection range, high sensitivity, good stability and strong anti-interference performance.

The invention relates to a preparation method of a gel polymer dielectric film by conveying an interpenetrating network structure P (LiAMPS) single ion, which belongs to a preparation method of polymer electrolyte films. The present invention solves the problems of low transport numbers and dimension stability of the present gel polymer electrolyte ions. The invention employs 2-acrylamide-2-methyl propanesulfonic acid lithium (LiAMPS) and vinyltriethoxysilane free radical polymerization to obtain a linear polymer P (LiAMPS-co-VTES), P (LiAMPS-co-VTES) containing an ethoxy functional group enables hydrolysis and polycondensation to form a net structure, simultaneously a cross-linking agent monomer polyethylene glycol dimethyl methacrylate is performed a free radical polymerization to form another net structure. The invention is capable of raising the dimension stability of the polymer electrolyte. Through heat weightlessness analysis, the polymer electrolyte films have good heat stability, the initial weightless temperature of the films is more than 200 DEG C, so that the requirement of lithium ion battery can be satisfied.

The invention discloses a method for preparing a nanocomposite dielectric film. The method comprises the following steps of: firstly obtaining a polymer dielectric film by a Langmuir-Blodgett (LB) film method; secondly preparing a high-dielectric inorganic / organic composite nanoparticle film on the polymer dielectric film by the LB film method; and finally preparing a polymer dielectric film on the composite nanoparticle film by the LB film method, thereby forming a high-dielectric composite film material with nanoparticles dispersed in a polymer. The polymer-nanoparticle composite dielectric film material prepared by the method overcomes the shortcomings of the prior art, and the preparation method is reasonable and simple, and easy to operate.

The invention relates to a COFs film material with a ultra-low dielectric constant, which belongs to the field of a dielectric material. The film material is the novel highly crystalline, uniform thickness, porous, flexible, moisture-resistant, ultra-low dielectric constant film material formed by reacting between two immiscible solution interfaces, and the dielectric constant can be as low as 1.19; and the regulation of properties and thickness can be achieved by regulating the composition and concentration of the components of two solutions. Compared with the conventional inorganic dielectric material and the organic high-molecular polymer dielectric material, the film material of the invention has the advantages of good stability of the inorganic dielectric material, low dielectric constant, as well as good flexibility and easy processing, good humidity resistance and the like, and develops the system of low dielectric constant dielectric materials.

The invention relates to a soft type polymeric compound lithium battery and a preparation method thereof. The soft type polymeric compound lithium battery is characterized by comprising a positive electrode piece which takes aluminize carbon cloth as a current collector, a negative electrode piece which takes coppered carbon fibre cloth as a current collector, and a partition plate which is a compound polymer dielectric film and arranged between the positive electrode piece and the negative electrode piece, wherein an aluminium model film is used for external packing. The soft type polymeric compound lithium battery provided by the invention has the advantages of strong shock resistance property, high safety feature, high mechanical property and good flexility.

The invention discloses a silicon substrate air-impermeability sealing structure and a manufacturing method thereof. The sealing structure comprises a silicon substrate provided with a complete through hole filled with first metal, the surface of the silicon substrate is passivated, and the back face of the silicon substrate is provided with a bonding pad. The front face of the silicon substrate is filled with a polymer dielectric layer provided with an opening which is filled with second metal. The upper surface of the polymer dielectric layer is provided with a metal wiring layer and an insulating layer. The second metal wiring layer and the second metal are in contact to form electric connection. A chip is mounted on the upper surface of a second insulating layer. A pin of the chip is electrically connected with the second metal wiring layer through a bonding wire, and the second metal wiring layer and the second metal are in direct contact to form electric connection. The second metal and the first metal are in direct contact to form electric connection. A cover plate and the silicon substrate are sealed together through sealing materials to form a cavity. The silicon substrate air-impermeability sealing structure and the manufacturing method thereof can effectively reduce the packaging size, improve structural strength, and simplify the production technology.

A substrate comprising a capacitor comprising metal electrodes and a ceramic or metal oxide dielectric layer, the capacitor being embedded in a polymer based encapsulating material and connectable to a circuit via a via post standing on said capacitor.

This invention discloses a gel polymer electrolyte, a preparation method for the same, a super capacitor and an application thereof. The gel polymer electrolyte preparation method includes steps of preparing viscous liquid containing PEO polymer, preparing gel polymer dielectric films through curtain coating and dipping and absorbing the electrolyte. The super capacitor contains the gel polymer electrolyte. The preparation method for the gel polymer electrolyte is simple in preparation, mature in technology and high in rate of finish products and efficiency, and effectively reduces the production cost. The gel polymer electrolyte prepared by the method has strong mechanical strength and high conductivity. The super capacitor containing the gel polymer electrolyte is high in the rate of finished products and low in production cost, and has excellent chemical properties and expands the application range of the super capacitor.

The invention relates to a preparation method of an anion-exchange membrane, which comprises the following steps: generating free radicals on the surface of polymer powder by plasma bombardment, carrying out graft copolymerization on the free radicals and chloromethyl styrene monomer, introducing functional radicals onto the polymeric matrix, and quaternizing and alkalifying the functional radicals to form ion-exchange radicals, thereby obtaining the anion-exchange membrane of which the functional radicals are uniformly distributed in the longitudinal direction. The method provided by the invention has the advantages of no toxicity and no environment pollution, and does not damage the polymer frame. The prepared anion-exchange membrane has the advantages of favorable thermal stability, chemical stability, electron exchange capacity and ionic conductivity, and low methanol transmittance, is suitable for polymer dielectric fuel batteries, and is especially suitable for alkaline direct alcohol fuel batteries.

The invention discloses a method for improving the working performance of a pentacene organic field effect transistor, and the method comprises the steps of setting an n-type semiconductor film transition layer between a polymer medium and pentacene in an organic field effect transistor device which is of a gate electrode / insulating layer / polymer medium film / pentacene / source and drain electrode structure, wherein the thickness of the n-type semiconductor transition layer is 1-100 nm; reducing the hole barrier height at an interface of pentacene and a charge trapping medium through the inducedelectrons at an interface in the n-type semiconductor transition layer so as to reduce a programming / erasing working voltage of the pentacene organic semiconductor transistor effectively; preventing the positive charges (holes) captured in the polymer dielectric film from escaping into a pentacene film through a positively charged space charge region formed by the ionization donors in the organicsemiconductor transition layer, so that the programming / erasing reliability and the data retention capability of the pentacene organic semiconductor transistor device are improved, and the working performance of the pentacene organic field effect transistor is improved.

In the invention, polymer dielectric instead of liquid electrolyte is applied to lithium cell to produce cell in different shapes with performances of safety, lightweight and high energy density. In contrast, in prior art, there are disadvantages such as unstable liquid and bad mechanical properties in existed technique. Gel state inorganic-organic hybrid polymer dielectric is prepared through ultraviolet light radiation to trigger off polymerization. The polymer dielectric is amorphous in room temperature possessing features of high conductivity, stable thermal and mechanical properties. Advantages of ultraviolet light solidifying method are one-step molding, simple technique, high efficiency, no pollution. Performed polymer of inorganic-organic hybrid polymer is prepared by reconstructing end group after sol-gel reaction of alkoxyl silicon compound. In room temperature, ionic conductivity is reached to 8.4x10 to the power -3 Scm being close to conductivity of liquid electrolyte.

Semiconductor devices employing siloxane epoxy polymers as low-κ dielectric films are disclosed. The devices include a semiconductor substrate, one or more metal layers or structures and one or more dielectric films, wherein at least one dielectric film in the devices is a siloxane epoxy polymer. Use of siloxane epoxy polymers is advantageous, in part, because the polymers adhere well to metals and have dielectric constants as low as 1.8. Thus, the disclosed semiconductor devices offer much better performance than devices fabricated using conventional dielectric materials. Furthermore, the siloxane epoxy polymer dielectrics are fully curable at low temperatures, exhibit low leakage currents, and remain stable at temperatures greater than 400° C. making them particularly attractive for use in the semiconductor industry

Present invention provides a film and an article including the film. The film includes first layer, second layer and third layer. The first layer includes a polymer dielectric material. The second layer is disposed on at least one surface of the first layer and includes inorganic oxide dielectric material. The third layer is disposed on the first or second layer and includes a nitride or oxynitride material.

Present invention provides a film and an article including the film. The film includes first layer, second layer and third layer. The first layer includes a polymer dielectric material. The second layer is disposed on at least one surface of the first layer and includes inorganic oxide dielectric material. The third layer is disposed on the first or second layer and includes a nitride or oxynitride material.

An integrated circuit includes isolation capacitors which include a silicon dioxide dielectric layer and a polymer dielectric layer over the layer of silicon dioxide. The silicon dioxide dielectric layer and the polymer dielectric layer extend across the integrated circuit. Top plates of the isolation capacitors have bond pads for wire bonds or bump bonds. Bottom plates of the isolation capacitors are connected to components of the integrated circuit. Other bond pads are connected to components in the integrated circuit through vias through the silicon dioxide dielectric layer and the polymer dielectric layer.

The embodiment of the invention discloses a method for preparing a high dielectric polymer composite film. The method comprises the following steps: preparing a polymer ultrathin film on a substrate by using an LB film method, preparing an oxidizing agent / nano-particle composite film on the surface of the polymer ultrathin film by using a spraying method, then obtaining a conductive polymer nano-particle composite film on the surface of the polymer ultrathin film by using a chemical vapor phase polymerization and deposition method, depositing the other layer of polymer thin film on the composite film by using the LB film method, and then performing heating treatment on the composite film to obtain the high dielectric polymer composite film. The composite film prepared by the method is the high dielectric polymer composite film of a polymer dielectric / nano-particle dielectric / conductive polymer / polymer dielectric, has a characteristic of self-supporting, and is very widely applied to high-energy density capacitors and other energy storage devices.

The present invention adds one or more thick layers of polymer dielectric and one or more layers of thick, wide metal lines on top of a finished semiconductor wafer, post-passivation. The thick, wide metal lines may be used for long signal paths and can also be used for power buses or power planes, clock distribution networks, critical signal, and re-distribution of I / O pads.

The invention relates to the technical field of nanocomposite materials and aims to provide a silicon dioxide / magnesium oxide / polymer dielectric and hydrophobic composite material and a preparation method. The dielectric and hydrophobic material is prepared from polymethyl methacrylate as a polymer matrix and magnesium oxide coated with a silicon dioxide shell as a filling material by blending andtape casting, wherein the filling material accounts for 10%-40% of the total mass of the dielectric and hydrophobic material and adopts silicon dioxide as the shell and flaky magnesium oxide as the core. The silicon dioxide / magnesium oxide / polymer dielectric and hydrophobic composite material and the preparation method have the following advantages: interfacial interaction areas between inorganicparticles as well as between the inorganic particles and a polymer can be increased, the interfacial polarization effect is enhanced, the dielectric constant of the composite material is increased, and the surface hydrophobicity is improved. The preparation process is simple, and the method is high in operability and repeatability. Dielectric, thermal and hydrophobic properties of the composite material can be regulated and controlled by regulating the adding content of inorganic filler, and the composite material can be applied to manufacturing of capacitors, electrowetting displays and other devices and has broad development prospect.