58 results about "Polymer dielectric" patented technology

The invention discloses a high-sensitivity capacitive pressure sensing fiber with a three-level heterostructure and a preparation method and application thereof, the high-sensitivity capacitive pressure sensing fiber with the three-level heterostructure has a coaxial three-level heterostructure, and the high-sensitivity capacitive pressure sensing fiber with the three-level heterostructure sequentially comprises a core layer, a middle layer and an outer layer from inside to outside; the core layer is a conductive fiber electrode layer with excellent flexibility, the middle layer is a porous aerogel electrode layer, and the outer layer is an ionic liquid doped elastic polymer dielectric layer. The high-sensitivity capacitive pressure sensing fiber with the three-stage heterostructure has the advantages of high sensitivity, wide pressure sensing range and short response time, realizes stable capacitance response in a compression release cycle process, and is particularly suitable for high-precision pressure signal detection; good application prospects are shown in the technical field of intelligent wearable equipment.

The invention relates to the technical field of microwave devices, in particular to a circular coaxial filter for annular micro-discharge verification and a preparation method of the circular coaxial filter. Comprising a filter, a coaxial stepped impedance structure is arranged in the filter, and the coaxial stepped impedance structure comprises a plurality of high-impedance structures arranged in series and a plurality of low-impedance structures arranged between the adjacent high-impedance structures at intervals; the input port, the output port and the low-impedance structure of the filter are all filled with polymer dielectric materials so as to form polymer rings through curing. The polymer ring in the middle of the filter is provided with an annular discharge gap to form a sensitive area; circumferential continuous groove arrays are formed in the two side walls of the annular discharge gap. Through groove treatment, the PTFE micro-discharge threshold value is increased to 700 W, the PI micro-discharge threshold value is increased to be larger than 2000 W, and the problems that the SEY of PTFE and PI polymers is high, the micro-discharge threshold value is low, and the micro-discharge risk is remarkably increased are solved.

The present application belongs to the technical field of polymer dielectric energy storage material, and discloses a preparation method of a full-organic small-molecule composite polymer film and a product. The preparation method comprises the following steps: mixing a mixed solution of PVDF and PMMA with a PE EU solution to form a pre-preparation solution; casting the pre-preparation solution on a substrate and heating and drying, and then heat treating in a vacuum environment to obtain the required composite polymer film. The present application also discloses the product prepared by the above preparation method. Through the present application, the problems of low discharge energy density and charge-discharge efficiency of ferroelectric-based polymer films are solved.

The application discloses a quinoline small molecule blended modified polymer dielectric material and a preparation method and application thereof, and belongs to the technical field of capacitor films. The preparation raw materials comprise quinoline derivatives, polymethyl methacrylate, styrene-methyl methacrylate copolymer, polyetherimide, polypropylene and N-methyl pyrrolidone solution, and the preparation steps comprise blending and film preparation. The blending solution or eutectic mixture is prepared through blending, and the polymer dielectric film is prepared through a flow casting method or bidirectional stretching. The prepared quinoline small molecule blended modified polymer dielectric film has excellent electrical properties, can reduce the leakage current of the polymer material, has high DC breakdown field strength, high energy storage density and low energy loss, and is easy to realize large-scale production.

The application discloses a polypropylene-based energy storage dielectric material and a preparation method and application thereof. The preparation method comprises the following steps: after a polypropylene substrate and a (meth) acrylic acid fluorine-containing ester monomer are pre-swollen in a solvent, polymerization reaction is carried out through an initiator, and post-treatment is carried out on a grafted polymer to obtain a (meth) acrylic acid fluorine-containing ester functionalized polypropylene. The application adopts a suspension polymerization method, introduces a fluorine-containing group into a polypropylene structure to induce electron cloud distribution, promotes crystalline domain aggregation to improve crystallinity, adjusts dielectric constant, loss factor, leakage current and breakdown electric field of a polymer material, so that energy storage density and efficiency of a polymer dielectric are controlled.

The invention discloses a semiconductor packaging method, which comprises the following steps of: preparing a wafer or a chip with a first rewiring layer; mounting a wafer or a chip, or the wafer or the chip and a support material on a carrier plate, carrying out plastic packaging, removing the carrier plate, and exposing the first rewiring layer; manufacturing a second rewiring layer, an electroplating metal circuit layer and a supporting frame on the first rewiring layer; and after a plurality of rewiring layers are manufactured as required, electroplating a lead frame or manufacturing solder ball bumps, and finally cutting into single packaging bodies. According to the invention, the solid support material with high modulus and low thermal expansion coefficient is embedded in the second rewiring layer, so that a local stress suppression skeleton is constructed in the packaging structure, and free shrinkage and expansion of the polymer dielectric layer in the subsequent thermal process are effectively restrained. Therefore, thermal stress generated by mismatch of thermal expansion coefficients is greatly offset, the overall bending deformation of the packaging body is fundamentally inhibited from the interior of the structure, and the overall rigidity and the anti-warping capability of the packaging body are improved.

The invention relates to the field of dielectric materials, and discloses a dielectric constant-adjustable cross-linked polymer dielectric film and a preparation method and application thereof, the material components of the cross-linked polymer dielectric film comprise a compound I and a compound II with the following structures (1) and (2): # imgabs0 #, and n represents the number of repetitive structure units. According to the invention, a series of polymer dielectric films with different illumination crosslinking time are obtained by adopting a ring-opening metathesis polymerization reaction initiated by a Grubbs catalyst; when the illumination crosslinking time is prolonged from 0 minute to 7.5 minutes, the dielectric constant of the polymer dielectric can be increased from 3.85 to 4.64, and the glass transition temperature is increased from 255 DEG C to 273 DEG C; under the temperature condition of 150 DEG C, the energy storage density of the optimized cross-linked polymer dielectric film can reach 7.4 J / cm < 3 > on the premise of maintaining 90% of charge-discharge efficiency.

This utility model relates to the field of electronic paper display technology, specifically to a plasma display module with a polymer dielectric coating, comprising: a first substrate and a second substrate, the second substrate being disposed opposite to the first substrate, forming a plasma display cavity between the first and second substrates, the plasma display cavity being filled with plasma particles; a pixel electrode layer is disposed on the surface of the second substrate facing the first substrate, a filter layer is disposed on the surface of the first substrate facing the second substrate, and a conductive dielectric layer is disposed on the surface of the filter layer facing the second substrate; a polymer dielectric coating is disposed on the surface of the conductive dielectric layer facing the second substrate or the surface of the pixel electrode layer facing the first substrate. The polymer dielectric coating in this utility model possesses the characteristics of strong vertical conductivity and weak horizontal conductivity, which can effectively reduce the oblique electric field and help particles move orderly between the upper and lower substrates, thereby eliminating image retention.

Integrated circuit (IC) packages employing a re-distribution layer (RDL) substrate(s) with photosensitive non-polymer dielectric material layers for increased package rigidity, and related fabrication methods. To reduce or minimize warpage of an IC package employing a RDL substrate, the RDLs of the RDL substrate are photosensitive non-polymer dielectric material layers. The photosensitive non-polymer dielectric material layers can exhibit increased rigidity as a result of being hardened when exposed to light and cured during fabrication of the RDL substrate. The photosensitive non-polymer dielectric material layers can also exhibit increased rigidity as a result of being an inorganic polymer (e.g., SiOx, SiN material) that has a higher material modulus for increased stiffness and / or a lower coefficient of thermal expansion (CTE) for reduced thermal contraction and expansion, as opposed to for example, an organic polymer material (e.g., Polyimide) which has less stiffness and a higher CTE.

A package comprising a first integrated device; a package interposer coupled to the first integrated device; and a passive device located at least partially in the package interposer. The passive device comprises a passive device substrate; a plurality of trench capacitors located at least partially in the passive device substrate; a plurality of through substrate vias extending through the passive device substrate; and a protection layer that is part of a first surface of the passive device, wherein the protection layer comprises an encapsulation layer or a polymer dielectric layer.

A capacitor at nanometer level and a resulting nanodevice such as a sensor are provided. The nanodevice includes a substrate, and a first 2D material layer disposed over the substrate and comprising a 2D material and being electrically conductive. The nanodevice further includes a polymeric nanoporous dielectric layer (NDL) disposed on the first 2D material layer. The polymeric NDL comprises a polymer having a crystalline structure and having lamellae substantially normal to a plane of the first 2D material. A conductive material layer is disposed on the polymeric NDL. The conductive material layer comprises a second 2D material layer or comprises a different electrically conductive material. The first 2D material, the polymeric NDL, and the conductive material layer are configured to provide a capacitor structure at a nanometer level. A method of making the capacitor or the nanodevice, and a method of using the same are also provided.

The invention discloses a board-level packaging method. The method comprises the following steps: preparing a chip with a first rewiring layer; mounting the chip or the chip and the support material on a carrier plate, performing plastic packaging, then removing the carrier plate, and exposing the first rewiring layer; manufacturing a second rewiring layer, an electroplating metal circuit layer and a supporting frame on the first rewiring layer; and after a plurality of rewiring layers are manufactured as required, electroplating a lead frame or manufacturing solder ball bumps, and finally cutting into single packaging bodies. According to the invention, the solid support material with high modulus and low thermal expansion coefficient is embedded in the second rewiring layer, so that a local stress suppression skeleton is constructed in the packaging structure, and free shrinkage and expansion of the polymer dielectric layer in the subsequent thermal process are effectively restrained. Therefore, thermal stress generated by mismatch of thermal expansion coefficients is greatly offset, the overall bending deformation of the packaging body is fundamentally inhibited from the interior of the structure, and the overall rigidity and the anti-warping capability of the packaging body are improved.

The invention discloses an organic donor-acceptor charge transfer eutectic self-supporting film, a polymer self-supporting film, a flexible transistor sensor thereof and a preparation method of the flexible transistor sensor. The sensor comprises an interdigital electrode, a semiconductor layer, a dielectric layer and the like, the semiconductor layer is an organic donor-acceptor charge transfer eutectic film, the dielectric layer is a polymer film, and the semiconductor layer and the dielectric layer are both prepared by a'water-solution-air 'interface film forming method; the preparation method of the sensor comprises the following steps: preparing the interdigital electrode on the substrate, spreading and volatilizing a mixed solution containing an organic donor and an organic acceptor on the water surface, and forming a uniform organic eutectic semiconductor layer on the surface of the interdigital electrode; and then, forming a polymer dielectric layer on the semiconductor layer by using the polymer solution through the same interface method, and finally preparing the gate electrode. According to the invention, various self-supporting single-crystal, polycrystal and amorphous films can be obtained, the dependence of a traditional spin-coating method on a substrate is overcome, and a novel semiconductor material for flexible sensing and a sensing mechanism are developed.

The present invention relates to a low-dielectric poly (arylene ether nitrile) composite material and a preparation method thereof, and belongs to the technical field of polymer dielectric materials. The technical problem solved by the present invention is to provide a preparation method for a low-dielectric poly (arylene ether nitrile) composite material with good process controllability. The method introduces hollow glass microspheres and performs organic modification treatment on the surface to obtain a functional filler with a core-shell structure; a trifluoromethyl group with a strong electronegativity is introduced into the poly (arylene ether nitrile) to prepare a poly (arylene ether nitrile) composite material. The material not only has a low dielectric constant and dielectric loss, but also exhibits good thermodynamic properties, and the compatibility and dispersibility between the filler and the matrix resin are good. The prepared composite material has better mechanical properties and can be used in the field of 5G communication technology, further expanding its use in the field of electronic materials. The method of the present invention is simple and controllable, and is suitable for large-scale industrial production.

The application discloses a self-powered artificial optical electric synapse with selective detection function and a preparation method thereof, and sequentially grows a polymer dielectric layer and two different ultrathin semiconductor light response layers on a SiO2 / Si substrate, wherein the upper ultrathin semiconductor light response functional layer is semi-covered on the lower ultrathin semiconductor light response layer to form an asymmetric heterojunction, then gold films are transferred to the lower and upper semiconductor light response functional layers as source and drain electrodes by using a non-invasive gold film transfer process, and the preparation of the self-powered artificial optical electric synapse with selective detection function is completed. The self-powered optical electric synapse with selective detection function can selectively detect and process ultraviolet light without any voltage by coupling photovoltaic effect and interface charge capture behavior, and has the ability of wide spectrum detection under the condition of applying voltage, and can simulate the perception and signal processing function of the retina.

A method for preparing a cyclic olefin copolymer composite insulating dielectric film, belonging to the field of capacitors. This invention addresses the problem of deteriorating insulation properties and reduced energy storage efficiency in existing polymer dielectric film capacitors under high temperature or high electric field conditions. The method includes the following steps: 1. Preparing a cyclic olefin copolymer solution; 2. Preparing an anhydride-grafted cyclic olefin copolymer solution; 3. Adding a high-polarity diamine monomer to the anhydride-grafted cyclic olefin copolymer solution for reaction, followed by coating and gradient-heating thermal imidization treatment. This method is used to prepare a cyclic olefin copolymer composite insulating dielectric film.

This invention relates to the field of polymer dielectric materials and discloses a cyclic olefin copolymer / anthracene composite dielectric film for high-temperature energy storage, comprising 100 parts by weight of a cyclic olefin copolymer and 0.2 to 1.0 parts by weight of anthracene. The anthracene is uniformly dispersed in the amorphous network interstices of the cyclic olefin copolymer, utilizing the energy difference between their lowest unoccupied molecular orbitals to construct deep trap sites. By capturing free carriers injected at the electrode interface under high temperature and strong electric field conditions, electron migration is restricted, thereby blocking leakage conduction paths within the bulk phase of the material. This invention effectively reduces Joule heat accumulation during charge transport, improves the high-temperature withstand voltage and insulation reliability of the film, while maintaining relatively low dielectric loss. This all-organic blend system avoids local electric field distortion caused by inorganic filler agglomeration, and the preparation process is simple and mild, facilitating large-scale engineering applications.

This invention relates to the field of polymer dielectric technology and discloses a method for preparing a polyimide film, comprising the following steps: (1) alicyclic dianhydride monomer and an ortho-side-group aromatic diamine monomer undergo a polycondensation reaction in an organic solvent to obtain a precursor solution; (2) the precursor solution is formed into a film, and then dried and subjected to an imidization reaction to obtain a polyimide film; the imidization reaction is carried out under vacuum conditions, and the imidization reaction is a programmed temperature rise reaction, specifically: holding at 180-210℃ for 1-2 h, then raising the temperature to 240-260℃ and holding for 1-2 h, and continuing to raise the temperature to T and holding for 0.5-1 h; wherein, T = T g -t,T g The glass transition temperature of the polymer is 10℃≤t≤20℃. The polyimide film prepared by this invention exhibits high insulation and heat resistance properties, allowing for energy storage applications at temperatures up to 300℃.

The present invention relates to the technical field of dielectric material preparation, and in particular to a method for preparing a polymer dielectric film. In the present invention, a diamine monomer, a dianhydride monomer, and an organic solvent are mixed under an inert atmosphere, and then subjected to a condensation reaction to obtain a prepolymer solution; wherein, one of the diamine monomer and the dianhydride monomer contains a benzyl group; the prepolymer solution is subjected to an imidization reaction and a benzyl free radical cross-linking reaction to obtain a polymer dielectric film. The glass transition temperature (Tg) of the polymer dielectric film obtained by this preparation method is improved, and the modified film can have an excellent breakdown electric field and energy storage density under a high temperature environment of 250°C. Moreover, this method does not add other complex and high-tech processes on the basis of the process for synthesizing commercial polymer dielectric films, and does not require vacuum environment cross-linking, is environmentally friendly and energy-saving, and the reaction degree is controllable. The surface of the obtained polymer dielectric film is smooth and the cross-section has no obvious defects.

A bonded assembly includes a first memory die including a first alternating stack of first insulating layers and first electrically conductive layers, first memory stack structures vertically extending through the first alternating stack, first metal interconnect structures embedded within first memory-die inorganic dielectric layers, and first memory-die copper bonding pads embedded within a first polymer dielectric layer, and a second memory die including a second alternating stack of second insulating layers and second electrically conductive layers, second memory stack structures vertically extending through the second alternating stack, second metal interconnect structures embedded within second memory-die inorganic dielectric layers, and second memory-die copper bonding pads embedded within a second polymer dielectric layer.

Embodiments for a method of forming a circuit bearing structure are provided. The method includes depositing a layer of thermoplastic particles on a surface, pressing and heating the layer of thermoplastic particles to create a contiguous thermoplastic film, and forming one or more circuit structures in the contiguous thermoplastic film.

The invention discloses a method for improving signal drift suppression performance of a flexible ion electronic sensor through surface treatment. Comprising the following steps: preparing a 3-aminopropyltriethoxysilane solution; performing plasma etching treatment on the indium tin oxide conductive polyester film; the indium tin oxide conductive polyester film subjected to surface plasma etching treatment is soaked in a 3-aminopropyltriethoxysilane solution, and the indium tin oxide conductive polyester film subjected to surface treatment is obtained; and assembling a dielectric layer and a lower electrode layer by taking the indium tin oxide conductive polyester film subjected to surface treatment as an upper electrode layer to obtain the flexible ion electronic sensor. The method disclosed by the invention is simple in process, easy to scale, low in cost and applicable to various polymer dielectric material systems.

An example method of manufacturing a glass substrate includes placing a glass panel on a temporary carrier film, cutting the glass panel in pieces in a first cutting operation, encapsulating a first surface of the glass pieces with a polymer dielectric, removing the temporary carrier film to expose a second surface of glass pieces, encapsulating the second surface of glass pieces with the polymer dielectric, applying a pressure or a temperature to the polymer dielectric, curing the polymer dielectric, forming a plurality of build-up layers on each of the glass pieces, where each build-up layer comprises a polymer layer and a metal layer, mounting an electronic component on the plurality of build-up layers of each of the glass pieces, and separating the glass pieces into individual glass substrates in a second cutting operation.

The present invention relates to a polyarylethernitrile dielectric film and a preparation method thereof, and belongs to the technical field of polymer dielectric materials. The technical problem solved by the present invention is to provide a preparation method of a polyarylethernitrile dielectric film with a simple process. The method first prepares a polyarylethernitrile microporous film; then immerses it in a nano-barium titanate sol, dries it, and stacks and hot presses it to obtain a polyarylethernitrile dielectric film. The present invention obtains a hydrophilic sulfonated polyarylethernitrile film with a microporous structure by direct coating, acid washing, and purification, thereby improving the compatibility with the sol, facilitating the sol to enter the matrix material for compounding, and adopts a sol-gel method to synthesize the barium titanate sol and repeatedly immerse and treat the film to successfully prepare a polyarylethernitrile dielectric film. The filler has good dispersion in the matrix resin, maintaining good thermal and mechanical properties, with a tensile strength greater than 94MPa and a heat deformation temperature greater than 140°C. The method is simple to operate and easy to control, can be mass-produced, and has important application value in the field of high dielectric film materials.

The invention discloses a PAN polymer dielectric composite material film, a preparation method thereof and a supercapacitor, and belongs to the technical field of supercapacitors. The preparation method of the PAN polymer dielectric composite material film comprises the following steps: dissolving a barium source and a calcium source in a mixed solvent containing acetic acid, acetylacetone and ethanol, heating, stirring and dissolving, sequentially adding a zirconium source ethanol solution and a titanium source, stirring until the solution is clarified, adding polyvinylpyrrolidone, and uniformly stirring to obtain the PAN polymer dielectric composite material film. Heating and stirring to form a stable barium-calcium-zirconium-titanium oxide precursor solution; carrying out electrostatic spinning on the barium-calcium-zirconium-titanium oxide precursor solution, and sintering the obtained fibers to remove organic matters, so as to obtain one-dimensional barium-calcium-zirconium-titanium oxide nanofibers; the preparation method comprises the following steps: dispersing barium-calcium-zirconium-titanium oxide nanofibers in N, N-dimethylformamide, adding PAN powder, stirring to form a suspension, pouring, heating and volatilizing a solvent to obtain a primary film, and carrying out hot pressing, cooling and cutting to obtain the dielectric composite film.

The invention discloses a preparation method of a polypropylene film material capable of improving dielectric energy storage characteristics, and relates to the technical field of polymer dielectric films. Norbornene anhydride is grafted to polypropylene, a polar group and a rigid structure are introduced into the polypropylene, then azobenzene is grafted, and the polypropylene film material capable of improving dielectric energy storage characteristics is obtained. The azobenzene can further react with norbornene dianhydride grafted to the polypropylene, then a cis-trans isomeric structure is introduced into the polypropylene, and then the modified polypropylene material is blended with the polypropylene. The prepared polypropylene film material can inhibit migration of carriers and improve the energy storage and release efficiency of the material, so that the material has excellent dielectric energy storage characteristics at room temperature and high temperature, is low in cost and has a very good application effect in the field of capacitors.

The invention discloses a polymer-filled single-ridge waveguide structure for medium micro-discharge verification, and belongs to the technical field of microwave devices. The structure comprises a single-ridge waveguide shell, a cavity is formed in the single-ridge waveguide shell, and a protruding ridge structure is arranged in the cavity; the polymer dielectric sheet is arranged in the cavity, and a sensitive gap is formed between the polymer dielectric sheet and the ridge structure; a micro trap structure is arranged on the surface of the polymer dielectric sheet and comprises a plurality of discrete micropores. The sensitive gap between the ridge structure of the single-ridge waveguide shell and the polymer dielectric sheet forms an electric field concentration area for inducing micro discharge; a micro trap structure is formed by discrete micropores in the surface of the polymer dielectric sheet and is used for inhibiting secondary electron emission. The structure provides a verification platform for micro-discharge effect research of organic media in waveguide devices.

The invention discloses a preparation method of an all-organic PF / PC composite dielectric film containing a molecular semiconductor. Belongs to the technical field of energy storage materials. The invention aims to improve the breakdown strength of the polymer medium and enhance the energy storage density of the polymer medium. According to the invention, PC particles and PF are dissolved in tetrahydrofuran to prepare a mixed solution, the PF / PC dielectric film is prepared by a method of drying after film coating, and the specific mechanism is that introduction of a molecular semiconductor PF forms a molecular trap with PC to inhibit transport of carriers, and hydrogen bonds are formed between fluorine atoms of PF and hydrogen atoms of PC to effectively inhibit migration of charge carriers, so that the performance of the PF / PC dielectric film is improved, and the performance of the PF / PC dielectric film is improved. Therefore, the insulating property of the polymer dielectric material is enhanced by inhibiting conduction, and the breakdown strength is finally improved. The invention can be widely applied to modern electronic equipment, 5G communication, electric automobiles, electromagnetic weapons and power systems.

A package comprising a first integrated device; a package interposer coupled to the first integrated device; and a passive device located at least partially in the package interposer. The passive device comprises a passive device substrate; a plurality of trench capacitors located at least partially in the passive device substrate; a plurality of through substrate vias extending through the passive device substrate; and a protection layer that is part of a first surface of the passive device, wherein the protection layer comprises an encapsulation layer or a polymer dielectric layer.

The invention discloses a high-temperature-resistant polymer dielectric film and a preparation method and application thereof, the high-temperature-resistant polymer dielectric film comprises the following components: methyl methacrylate-styrene copolymer resin and nano-hydroxyapatite, the mass fraction of the nano-hydroxyapatite is 1wt%-5wt% relative to the methyl methacrylate-styrene copolymer resin, and the mass fraction of the nano-hydroxyapatite is 1wt%-5wt% relative to the methyl methacrylate-styrene copolymer resin. The nano-hydroxyapatite is in a uniformly dispersed state in the methyl methacrylate-styrene copolymer resin; the methyl methacrylate-styrene copolymer resin is obtained by copolymerizing methyl methacrylate and styrene according to a mass ratio, and the mass ratio of the methyl methacrylate to the styrene is (60: 40)-(70: 30). The film provided by the invention has a relatively high dielectric constant and relatively low dielectric loss in a relatively wide frequency range, has excellent thermal stability and mechanical strength, is suitable for a dielectric layer in an electronic device working in a high-temperature environment, and has a good application prospect.