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COFs film material with ultra-low dielectric constant

An ultra-low dielectric constant, thin-film material technology, applied in the field of dielectric materials, to achieve the effects of good humidity resistance, simple operation, and good stability

Active Publication Date: 2019-02-01
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no report on the application of COFs to low dielectric constant dielectric materials.

Method used

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  • COFs film material with ultra-low dielectric constant
  • COFs film material with ultra-low dielectric constant
  • COFs film material with ultra-low dielectric constant

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] (1) Add TAPB and PTSA to a container filled with water and acetonitrile (V 水 :V 乙腈 =7:3) in a beaker, mix well to obtain a TAPB concentration of 2.67μM mL -1 , PTSA concentration is 8μM mL -1 Solution A; the TPOC 1 Add to a beaker filled with ethyl acetate, mix well to get TPOC 1 Concentration is 4μM mL -1 Solution B of

[0069] (2) Slowly transfer solution B to the upper layer of solution A, and seal the beaker containing solution B and solution A with a plastic wrap, and place it at 20° C. for 3 d to form a film material;

[0070] (3) Remove the film material from the beaker, soak and wash in water, N,N-dimethylformamide, ethanol, and acetone in sequence, soak and wash in each solvent for 3 times, and soak and wash for 1 hour each time; The washed film material was dried in an oven at 60°C for 12 hours to obtain a yellow COFs film material with ultra-low dielectric constant, which is called TAPB-TPOC for short. 1 - COF membrane material.

Embodiment 2

[0072] (1) Add TAPB and PTSA to a container filled with water and acetonitrile (V 水 :V 乙腈 =7:3) in a beaker, mix well to obtain a TAPB concentration of 4 μM mL-1 , PTSA concentration is 12μM mL -1 Solution A; the TPOC 4 Add to a beaker filled with ethyl acetate, mix well to get TPOC 4 Concentration is 6μM mL -1 Solution B of

[0073] (2) Slowly transfer solution B to the upper layer of solution A, and seal the beaker containing solution B and solution A with a plastic wrap, and place it at 20° C. for 3 d to form a film material;

[0074] (3) Remove the film material from the beaker, soak and wash in water, N,N-dimethylformamide, ethanol, and acetone in sequence, soak and wash in each solvent for 3 times, and soak and wash for 1 hour each time; The washed film material was dried in an oven at 60°C for 12 hours to obtain a yellow COFs film material with ultra-low dielectric constant, which is called TAPB-TPOC for short. 4 - COF membrane material.

Embodiment 3

[0076] (1) Add TAPB and PTSA to a container filled with water and acetonitrile (V 水 :V 乙腈 =7:3) in a beaker, mix well to obtain a TAPB concentration of 4 μM mL -1 , PTSA concentration is 12μM mL -1 Solution A; the TPOC 6 Add to a beaker filled with ethyl acetate, mix well to get TPOC 6 Concentration is 6μM mL -1 Solution B of

[0077] (2) Slowly transfer solution B to the upper layer of solution A, and seal the beaker containing solution B and solution A with a plastic wrap, and place it at 20° C. for 3 d to form a film material;

[0078] (3) Remove the film material from the beaker, soak and wash in water, N,N-dimethylformamide, ethanol, and acetone in sequence, soak and wash in each solvent for 3 times, and soak and wash for 1 hour each time; The washed film material was dried in an oven at 60°C for 12 hours to obtain a yellow COFs film material with ultra-low dielectric constant, which is called TAPB-TPOC for short. 6 - COF membrane material.

[0079] On the basis o...

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Abstract

The invention relates to a COFs film material with a ultra-low dielectric constant, which belongs to the field of a dielectric material. The film material is the novel highly crystalline, uniform thickness, porous, flexible, moisture-resistant, ultra-low dielectric constant film material formed by reacting between two immiscible solution interfaces, and the dielectric constant can be as low as 1.19; and the regulation of properties and thickness can be achieved by regulating the composition and concentration of the components of two solutions. Compared with the conventional inorganic dielectric material and the organic high-molecular polymer dielectric material, the film material of the invention has the advantages of good stability of the inorganic dielectric material, low dielectric constant, as well as good flexibility and easy processing, good humidity resistance and the like, and develops the system of low dielectric constant dielectric materials.

Description

technical field [0001] The invention relates to a class of two-dimensional layered covalent organic frame film materials with ultra-low dielectric constant, belonging to the field of dielectric materials. Background technique [0002] Dielectric materials refer to materials that can undergo polarization, conductance, loss and breakdown under the action of an external electric field. According to their application range, they can be divided into two categories: (1) Dielectric materials with high dielectric constant, mainly used (2) Dielectric materials with low dielectric constant are widely used in the production of integrated circuits. At present, widely used low dielectric constant dielectric materials include the following two categories: (1) silicon dioxide (SiO 2 ) as the representative inorganic material has the advantages of low dielectric constant and good stability, but the disadvantages of this type of material are poor flexibility, fragility, and poor processabil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J5/18C08G12/08C08L61/22
CPCC08G12/08C08J5/18C08J2361/22
Inventor 冯霄王博邵鹏鹏李婕
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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