According to the
tensile strain germanium wafer on the glass substrate, the imaging
chip and the forming method of the imaging
chip, the
acceptor substrate comprises the transparent glass substrate, the light
transmittance of the short-wave
infrared band is extremely high, light of the short-wave
infrared band can reach the
tensile strain germanium layer, the transparent glass substrate can also enable visible light to penetrate, and the imaging
chip can be applied to the imaging chip. Visible light can also reach the
tensile strain germanium layer. Light of more wavebands enters the tensile strain germanium
wafer on the glass substrate through the transparent glass substrate, the tensile strain of the tensile strain germanium layer is further increased through direct
wafer bonding operation, the
response capacity to incident light is improved, and the
wavelength response range of the tensile strain germanium wafer on the glass substrate is expanded to be within the range of 400 nm to 1700 nm. The wafer taking the transparent glass as the substrate is large in size and low in
batch production cost, can be highly compatible with a
CMOS (complementary
metal oxide semiconductor) process
production line, can overcome the defects of
fragility, high cost and the like of a bulk germanium material, and improves the quality of the tensile strain germanium wafer on the glass substrate.