A method for producing a film of
vanadium pentoxide nanowires having improved alignment is provided. The method comprises the steps of a) preparing a solution of
vanadium pentoxide (V2O5) nanowires by a
sol-
gel method; b) diluting the solution of
vanadium pentoxide nanowires with water and feeding the dilute
aqueous solution into a
Langmuir-Blodgett trough; c) adding a dispersant to the dilute
aqueous solution of vanadium pentoxide nanowires; d) diluting a solution of a dioctadecyldimethylammonium
halide with an
organic solvent, applying the dioctadecyldimethylammonium
halide solution to the surface of the dilute
aqueous solution of vanadium pentoxide nanowires in the
Langmuir-Blodgett trough, and allowing the solutions to stand to disperse the dioctadecyldimethylammonium
halide solution in the
Langmuir-Blodgett trough; e) controlling the
surface pressure of the dioctadecyldimethylammonium halide solution using barriers mounted on the Langmuir-Blodgett trough; f) affixing a substrate to a dipping arm of the Langmuir-Blodgett trough and bringing the substrate into contact with the surface of the dioctadecyldimethylammonium halide solution; and g) separating the substrate from the dipping arm. According to the method, the alignment of the nanowires can be markedly improved by
sol-gel synthesis, the need for subsequent washing can be eliminated, which contributes to the simplification of the production process, and the nanowires can be
cut to desired lengths in a simple manner, thereby ensuring the reproducibility of a device using the
nanowire film and achieving improved characteristics of the device. Further provided are a vanadium pentoxide
nanowire film produced by the method and a
nanowire device comprising the nanowire film. The nanowire device can find application in various fields, including
field effect transistors and a variety of sensors, due to its excellent characteristics and reproducibility.