Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing ordered micron/nano structure array of conducting polymer

A technology of conductive polymers and nanostructures, applied in the field of polymer materials, to achieve the effects of easy operation, fast migration, and reasonable and simple preparation methods

Inactive Publication Date: 2012-04-11
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the research on the assembly process of these nanostructures at the air / liquid interface is still in its infancy, and the dynamic assembly mechanism and process of nanostructures at the air / liquid interface require in-depth and systematic research.
[0007] Judging from the current research, the research on PEDOT ordered nano-films has made some progress, but there are still many problems, the most important of which is the stable and reliable assembly of ordered nano-structures, which is very important for the device after the device is prepared. Performance has a very heavy impact

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing ordered micron/nano structure array of conducting polymer
  • Method for preparing ordered micron/nano structure array of conducting polymer
  • Method for preparing ordered micron/nano structure array of conducting polymer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] exist figure 1 The middle LB film tank is an ultra-pure aqueous solution. When a certain concentration of dodecyl-3,4-ethylenedioxythiophene / chloroform solution mixture is added to the surface of the ultra-pure aqueous solution, the monomer molecules can be effectively in the gas / After the chloroform volatilizes, control the sliding barrier 5 to compress the monomolecular film at a certain speed, keep the molding pressure constant for a period of time after reaching the required surface pressure, and then control the substrate to transfer the monomolecular film to the substrate at a certain speed. The surface of the chip and the surface of the substrate are treated with hydrophilicity.

[0045] exist figure 2 in, by figure 1 The obtained polymer monomer ordered film obtains an ordered array structure of monomer micro / nano structures by means of electron beam etching.

[0046] exist figure 2 In the process, the ordered array of monomeric micro / nanostructures is fu...

Embodiment 2

[0055] Such as figure 2 , the monomer material is octadecyl-3,4-ethylenedioxythiophene, and the surface of the substrate is treated with hydrophobicity.

[0056] The preparation process of the ordered nanowire structure array is similar to Embodiment 1. Since the monomer material is octadecyl-3,4-ethylenedioxythiophene, polyoctadecyl-3,4-vinyldioxythiophene is obtained. Oxythiophene Conductive Polymer Nanowire Structure Arrays.

[0057] The etching line width is 250 nanometers, thereby obtaining a polyoctadecyl-3,4-ethylenedioxythiophene nanowire ordered structure array with a width of 250 nanometers.

Embodiment 3

[0059] Such as figure 2 , the monomer material is eicosyl-3,4-ethylenedioxythiophene, and the surface of the substrate is treated with hydrophobicity.

[0060] The preparation process of the ordered nanowire structure array is similar to Embodiment 1. Since the monomer material is eicosyl-3,4-ethylenedioxythiophene, polyeicosyl-3,4-ethylenedioxythiophene is obtained. Oxythiophene Conductive Polymer Nanowire Structure Arrays.

[0061] The etching line width is 250 nanometers, thereby obtaining a polyeicosyl-3,4-ethylenedioxythiophene nanowire ordered structure array with a width of 250 nanometers.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing an ordered micron / nano structure array of a conducting polymer, which comprises the following steps of: acquiring an ordered membrane of the conducting polymer monomer through an LB (Langmuir-Blodgett) membrane method, acquiring an ordered array structure of the polymer monomer on the monomer membrane through an etching method, and acquiring an ordered micron / nano structure array of the conducting array through a chemical in-situ polymerization method. The micron / nano structure array of the polymer prepared by the method in the invention can overcome the defects of the prior art, and the preparation method is reasonable and simple and easy to operate.

Description

technical field [0001] The invention relates to the field of polymer materials, in particular to a method for preparing a conductive polymer ordered micro / nano structure array. Background technique [0002] In recent years, conductive polymer materials with regular morphology (such as balls, wires, ribbons, tubes, etc.) in the micro- and nano-scale range have become a research hotspot for scientists from all over the world. After these novel conductive polymer nanostructures interact with certain media in the atmosphere, due to the large specific surface area and excellent surface conditions of the material, the gas molecules can be adsorbed / desorbed on the surface of the sensitive material quickly, making the gas sensor With the characteristics of fast response, high selectivity, and room temperature operation, it is a research hotspot for the next generation of gas sensor sensitive materials. However, at present, this conductive polymer material is basically in a disorder...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01B13/00C08G61/12C03C17/28
Inventor 杨亚杰蒋亚东徐建华
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products