Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of compound nano film

A nano-film and film-forming technology, which is applied in the field of composite nano-film preparation, can solve the problems of disordered distribution, low controllability of conductive polymer thickness, difficulty in forming ultra-thin conductive polymer, etc., and achieve electrochemical activity High, good conductivity

Inactive Publication Date: 2013-11-20
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF3 Cites 25 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the problems in the prior art, the purpose of the present invention is how to provide a preparation method of composite nano film, the prepared composite nano film based on LB film The structure overcomes the technical defects of disordered distribution of graphene oxide quantum dots GOQD, low controllability of conductive polymer thickness, and difficulty in forming ultra-thin conductive polymers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of compound nano film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] The preparation method is as follows:

[0040] ①Disperse carboxylated graphene oxide quantum dots in N,N-dimethylacetamide, the concentration of graphene oxide quantum dots is 5-7mg / ml, to form a graphene oxide quantum dot dispersion for LB film preparation ;

[0041] ②Add 3,4-ethylenedioxythiophene and ferric toluenesulfonate to absolute ethanol solvent to obtain poly-3,4-ethylenedioxythiophene solution for spin coating. The mass ratio of 3,4 ethylenedioxythiophene to iron toluenesulfonate is 1:4.

[0042] ③ Use a micro-sampler to extract 400-600 μl. ① Add the obtained solution dropwise to the surface of the ultrapure aqueous solution in the LB membrane tank. After N,N-dimethylacetamide volatilizes for 30 minutes, start to press the membrane. Graphite oxide quantum dot ene film has been formed at the / liquid interface;

[0043] ④ Control the sliding barrier of the LB film equipment to compress the graphene oxide film at a speed of 0.5-1 mm / min to a film pressure of ...

Embodiment 2

[0047] like figure 1 , the conductive polymer is polypyrrole.

[0048] The preparation process of the composite nanostructure is similar to Embodiment 1.

[0049] Thus, a composite nanofilm structure of polypyrrole-wrapped graphene oxide quantum dots was obtained.

Embodiment 3

[0051] like figure 1 , the conductive polymer is polyaniline.

[0052] The preparation process of the composite nanostructure is similar to Embodiment 1.

[0053] Thus, a composite nanofilm structure of polyaniline-wrapped graphene oxide quantum dots was obtained.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of a compound nano film, and belongs to the field of electronic film materials. The method comprises the steps as follows: GOQDs (graphene oxide quantum dots) are assembled in a substrate with an LB (Langmuir blodgett) film method, and then conducting polymers are deposited on the GOQDs in a spin-coating manner, so that the compound nano film with the GOQDs tightly wrapped with the conducting polymers is formed. According to the preparation technique of the GOQDs / conducting polymer compound nano film, the defects in the prior art are overcome, large-area film formation can be implemented easily, the preparation method is reasonable, simple and easy to operate.

Description

technical field [0001] The invention relates to the field of electronic film materials, in particular to a method for preparing a composite nano film based on graphene oxide quantum dots and conductive polymers. Background technique [0002] Graphene oxide GO has good solution processability as a precursor for graphene preparation. In recent years, the research and development of new configurations of GO composite nanomaterials has become a hot spot in the field of functional materials research. [0003] Graphene oxide quantum dots (Graphene oxide quantum dot, GOQD) are quasi-zero-dimensional nanomaterials, and the movement of electrons in them is restricted in all directions, so the quantum confinement effect is particularly significant and has many unique properties. Graphene quantum dots have important potential applications in the fields of biology, medicine, materials, and new semiconductor devices. [0004] Carboxyl-modified GOQD plays an important role in the prepar...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C08J5/18C08L65/00C08L79/04C08L79/02C08K9/00C08K3/04C08G61/12C08G73/06C08G73/02
Inventor 杨亚杰杨文耀徐建华蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products