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Method for preparing nanocomposite dielectric film

A dielectric thin film and nanocomposite technology, which is applied in chemical instruments and methods, components of fixed capacitors, circuits, etc., can solve the problems of inconvenient capacitor miniaturization, high price, and easy breakdown of thin films

Inactive Publication Date: 2012-08-15
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The polytetrafluoroethylene film is produced by DuPont of the United States. The dielectric constant is relatively small, and the film thickness can only reach 12.7 μm at present. It is not convenient to realize the miniaturization of capacitors, and it is also difficult to meet military needs.
Polyimide film is also produced by an American company, with a dielectric constant of only 3.4, and the film is prone to breakdown, and the price is expensive, which cannot meet the requirements of military high energy storage density capacitors

Method used

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  • Method for preparing nanocomposite dielectric film
  • Method for preparing nanocomposite dielectric film
  • Method for preparing nanocomposite dielectric film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] Polyvinylidene fluoride (PVDF) polymer dielectric materials are dissolved in organic solvents such as dimethyl sulfoxide to form a well-dispersed solution of PVDF. Barium titanate (BaTiO 3 ) nanoparticles and conductive polymer poly-3,4-ethylenedioxythiophene (PEDOT) nanoparticles are mixed and dissolved in organic solutions such as chloroform to form two well-dispersed solutions of nanoparticles. The obtained dispersion solution was dripped onto the surface of ultrapure water in different tanks of the LB membrane using a microsampler, so that PVDF and nanoparticles spread on the surface of ultrapure water. Control the sliding barrier of the LB film groove ( figure 1 2 and 4) respectively compress the PVDF and nanoparticles in the groove to the film-forming pressure to obtain a tightly arranged PVDF film ( figure 1 7) and nanoparticle films ( figure 1 Medium 8). The PVDF dielectric nano-thin film was first prepared on the substrate by the method of LB film horizonta...

Embodiment 2

[0067] like figure 2 , the nano particle material is barium titanate and polypyrrole.

[0068] The preparation process of the nanocomposite dielectric film is similar to that of Embodiment 1. Since the nanoparticle materials are barium titanate and polypyrrole, PVDF-BaTiO 3 / Polypyrrole nanoparticles-PVDF composite nano-dielectric film structure.

Embodiment 3

[0070] like figure 2 , the nano particle material is barium titanate and polyaniline.

[0071] The preparation process of the nanocomposite dielectric film is similar to that of Embodiment 1. Since the nanoparticle materials are barium titanate and polypyrrole, PVDF-BaTiO 3 / Polyaniline nanoparticles-PVDF composite nano-dielectric film structure.

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Abstract

The invention discloses a method for preparing a nanocomposite dielectric film. The method comprises the following steps of: firstly obtaining a polymer dielectric film by a Langmuir-Blodgett (LB) film method; secondly preparing a high-dielectric inorganic / organic composite nanoparticle film on the polymer dielectric film by the LB film method; and finally preparing a polymer dielectric film on the composite nanoparticle film by the LB film method, thereby forming a high-dielectric composite film material with nanoparticles dispersed in a polymer. The polymer-nanoparticle composite dielectric film material prepared by the method overcomes the shortcomings of the prior art, and the preparation method is reasonable and simple, and easy to operate.

Description

technical field [0001] The invention relates to the field of electronic materials and components, in particular to a preparation method of a dielectric thin film based on a composite nanostructure. Background technique [0002] High energy density capacitors are widely used in missiles and space fields, mainly for new electromagnetic pulse weapons (electromagnetic bombs and electromagnetic cannons) and electromagnetic energy weapons (electromagnetic rail guns and electromagnetic armor-piercing weapons), excimer Laser weapons, particle beam accelerators, high-power microwave sources, X-ray sources and other new concept weapons, strategic ballistic missiles, electromagnetic armor, etc. Due to the embargo imposed on my country by the United States of high energy storage density capacitors, the development of new electromagnetic energy weapons in our country is restricted. [0003] In high energy storage density capacitors, the shape and performance of the dielectric materials ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B37/02B32B27/08B32B27/18B32B27/28B32B27/30C08J5/18H01G4/18
CPCH01G4/206
Inventor 杨亚杰蒋亚东徐建华杨文耀
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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