The invention discloses a high-
linearity three-dimensional
nanowire channel device and a preparation method thereof, the device comprises a substrate layer, a GaN buffer layer and an AlGaN slowly-changing
barrier layer which are sequentially stacked from bottom to top, a source
electrode and a drain
electrode are respectively deposited at two ends of the AlGaN slowly-changing
barrier layer, a Fin gate is deposited on one side close to the source
electrode, a plurality of
nanowire channels are arranged along the gate width direction, and the Fin gate surrounds the
nanowire channels; the method comprises the steps that an epitaxial substrate is obtained, wherein the epitaxial substrate comprises a substrate layer, a GaN buffer layer and an AlGaN slowly-changing
barrier layer; a source electrode and a drain electrode are prepared at the two ends of the AlGaN slowly-changing barrier layer respectively; siN temporary barrier
layers are deposited on the surface of the device, and a plurality of strip-shaped SiN temporary barrier
layers arranged at intervals are formed between the source electrode and the drain electrode; photoetching and developing the outline of a Fin gate, and
etching the AlGaN slowly-changing barrier layer which is not covered by the SiN temporary barrier layer in a Fin gate region; all the SiN temporary barrier
layers are removed, and a zigzag nanowire channel is reserved in the Fin gate region; depositing
metal in the Fin gate region to form a Fin gate; the invention has the advantages of high
linearity, high output current and better
ohmic contact.