The invention discloses an inclined cavity surface two-dimensional
photonic crystal distribution feedback
quantum cascade laser and a preparation method. The inclined cavity surface two-dimensional
photonic crystal distribution feedback
quantum cascade laser comprises an InP substrate, an InP
waveguide limit layer manufactured on the InP substrate, an InGaAs lower
waveguide layer manufactured on the InP
waveguide limit layer, a strain compensation
active layer manufactured on the InGaAs lower waveguide layer, an InGaAs upper waveguide layer manufactured on the strain compensation
active layer, a two-dimensional rectangular
photonic crystal dot matrix graph manufactured on the InGaAs upper waveguide layer, an InP cover layer manufactured on the InGaAs upper waveguide layer, a
contact layer manufactured on the cover layer for forming a secondary epitaxial
wafer, V-shaped double channels etched downward from the surface of the secondary epitaxial
wafer to the limit layer for forming a slant
ridge waveguide, a
silicon dioxide layer which is manufactured on the surfaces of the V-shaped double channels and the
contact layer, a front
electrode manufactured on the surface of the etched secondary epitaxial
wafer, a
metal layer which is manufactured on the front
electrode and fills up the two V-shaped double channels and an
alloy electrode manufactured on the backside of the InP substrate, wherein a current injection window is formed in the middle of the
silicon dioxide layer on the surface of the
contact layer.