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Biosensor base on zinc oxide and high electron mobility transistor and its preparation method

A high electron mobility, biosensor technology, applied in the direction of electrochemical variables of materials, etc., can solve the problems of complex preparation process, and achieve the effect of simple preparation process, convenient use and portability

Inactive Publication Date: 2012-01-11
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] So far, the application of HEMT in biological detection has only been combined with ZnO nanoarrays, and its preparation process is relatively complicated.

Method used

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  • Biosensor base on zinc oxide and high electron mobility transistor and its preparation method
  • Biosensor base on zinc oxide and high electron mobility transistor and its preparation method
  • Biosensor base on zinc oxide and high electron mobility transistor and its preparation method

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Experimental program
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Effect test

Embodiment 1

[0031] 1. The AlGaAs / GaAs high electron mobility transistor was prepared by MBE technology. The specifications are as follows: the GaAs layer is 1 μm thick, the AlGaAs layer is 3 nm thick, the Si-doped AlGaAs layer is 22 nm thick, and the Si-doped cap layer GaAs is 5 nm thick. nm thick. Then use the method of thermal evaporation to prepare nickel gold germanium nickel gold 100 nm thick electrode, and finally deposit a 200 nm thick silicon dioxide insulating layer on the electrode, leaving 0.5 × 5 mm on each side 2 Electrodes not covered by insulation.

[0032] 2. Then, four needle-like ZnO-modified AlGaAs / GaAs high electron mobility transistor gate surfaces with a size of about 5 μm were prepared by CVD. The modification method is to uniformly disperse the prepared tetraacicular zinc oxide on the gate surface of the HEMT through ethanol, and the formed zinc oxide layer is about 5 μm.

[0033] 3. Glucose molecules with an activity of 109 U / mg were added dropwise on the zin...

Embodiment 2

[0036]1. The method used to construct the AlGaAs / GaAs HEMT is as described in the first step in Example 1.

[0037] 2. The tetrapod-shaped zinc oxide was prepared, and the method of using these zinc oxides to modify the HEMT gate was as described in the second step in Example 1.

[0038] 3. On the zinc oxide layer, uricase molecules with an activity of 4.43 U / mg were added dropwise for modification, and Nafion was added dropwise to form a film to fix the tetrapod zinc oxide. The biosensor modified with the biological enzyme is stored in the refrigerator for 24 hours, and then the uric acid solution can be measured.

[0039] 4. Before measuring the uric acid solution, the biosensor needs to be incubated in a constant temperature environment at 37°C for 15 minutes. During the measurement, the two probes of the electrochemical workstation (SI 1287) and the two electrodes of the uric acid biosensor constitute a measurement circuit for measurement, and the measurement bias...

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Abstract

The invention provides a biosensor base on zinc oxide and high electron mobility transistor and its preparation method, which belongs to the nano-material application field. The invention is characterized by using a molecular beam epitaxy (MBE) system to prepare an AlGaAs / GaAsHEMT layered structure. A method of heat vapor plating is used to prepare a nickel / gold-germanium / nickel / gold alloy electrode, a silica insulating layer is deposited on the surface of the device to obtain the AlGaAs / GaAsHEMT. A gas-solid method is used for preparing T-ZnO. T-ZnO is modified on a grid electrode of HEMT and a bio-enzyme solution and a Nafion solution are added add drop by drop on a T-ZnO layer. The prepared device is placed at the low temperature for a period of time and then can detect the concentration of the solution to the corresponding biological solution. The invention has the advantage that the prepared device is capable of modifying different biological enzyme through the grid electrode to detect the concentration of the solution to the corresponding biological solution, and has the merits of high sensitivity, low detection limitation, wide detection scope, fast response speed, simple structure and stable performance, so that the biosensor provides the possibility to an practical application.

Description

technical field [0001] The invention belongs to the application field of nanometer materials. The combination of semiconductor devices and biological measurement not only fully exerts the instant response of semiconductor devices, but also realizes the micro-measurement of biomolecules. Background technique [0002] With the continuous development of nanoscience and technology, more and more research results have been applied to the field of biomedicine. For the micro-measurement of biomolecules, we can better grasp and control the health of the human body. For example, by micro-measurement of uric acid molecules, we can pre-prevent those who may suffer from gout, and greatly reduce the probability of suffering from gout. Another example is the micro-measurement of glucose molecules, which can allow us to have an early prevention of potential diabetes and greatly reduce the incidence of diabetes. As the main material carrier for detecting the microscopic concentration of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/26
Inventor 张跃宋宇雷洋闫小琴罗宁刘羲
Owner UNIV OF SCI & TECH BEIJING
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