Grid drive circuit of intelligent power module

Abstract

The invention relates to a grid drive circuit of an intelligent power module, which comprises a first to a sixth insulated grid bipolar transistor. An emitter of the first insulated grid bipolar transistor is connected with a collector of the fourth insulated grid bipolar transistor, and a connection point of the emitter and the collector is U phase of a motor; an emitter of the second insulated grid bipolar transistor is connected with a collector of the fifth insulated grid bipolar transistor, and a connection point of the emitter and the collector is V phase of the motor; an emitter of the third insulated grid bipolar transistor is connected with a collector of the sixth insulated grid bipolar transistor, and a connection point of the emitter and the collector is W phase of the motor; and the grid drive circuit is characterized by further comprising an eighth sampling resistance, a ninth sampling resistance, a first to a sixth resistance value automatic adjusting circuit and a first to a fourth power supply. The grid drive circuit of the intelligent power module has the advantages of automatically adapting to various application situations, achieving a balance between ring interference reduction and switch consumption control, and effectively reducing rates of electric breakdown and thermal breakdown of the intelligent power module.

Description

technical field [0001] The invention relates to a grid drive circuit of an intelligent power module, in particular to the processing of switching time of a high-voltage device in an intelligent power module (IPM), and also relates to the ringing suppression technology of the intelligent power module. Background technique [0002] Intelligent Power Module, or IPM (Intelligent Power Module), is a power drive product that combines power electronics and integrated circuit technology. The intelligent power module integrates the power switching device and the high-voltage drive circuit together and has built-in fault detection circuits such as overvoltage, overcurrent and overheating. On the one hand, the intelligent power module receives the control signal from the MCU to drive the subsequent circuit to work, and on the other hand, it sends the system status detection signal back to the MCU. Compared with traditional discrete solutions, intelligent power modules have won an incr...

AI Technical Summary

Problems solved by technology

[0011] The switching speed of the first to the first to the sixth insulated gate bipolar transistors and the inductance of the load determine the amplitude and duration of the ringing of the U, V, and W phases when they rise and fall rapidly; If it exceeds the withstand voltage of the first to the first to the sixth IGBTs, it is possible that the voltage will break down the first to the first to the sixth IGBTs; if the ringing duration is too long Long, it may cause the first to the first to the sixth insulated gate bipolar transistors to be turned on at the same time and generate a large current to cause them to thermally break down

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