The invention relates to a method for improving
metal at the edge of a
silicon wafer, which belongs to the technical field of
silicon wafer processing and comprises the following operation steps of: 1, spraying pure water on a second-hand
wafer box for 5 minutes at the flow rate of 25 Lpm; secondly,
hydrochloric acid is soaked in a pure water soaking tank, and the second-hand tablet box is soaked for 30 min; and 3, spraying pure water on the second-hand film box for 10 minutes, wherein the flow rate of the pure water is 40 Lpm. Fourthly, the second-hand piece box is subjected to rotary spin-
drying, the rotating speed is 300 Rpm, and the spin-
drying time is 10 min. 5, the second-hand tablet box is put into a closed
drying oven to be dried, the drying temperature ranges from 62 DEG C to 65 DEG C, and the
drying time is 30 min. And 6, putting a clean
silicon wafer into the cleaned and dried second-hand wafer box, and detecting the
metal level of the edge of the silicon wafer. The problem that the wafer box cleaning
machine cannot clean the second-hand wafer box is solved. After
hydrochloric acid with the
dilution concentration of 0.4% is added into the cleaning tank of the wafer box cleaning
machine, Al and
Fe element metal pollution is effectively reduced, and the second-hand wafer box metal level is improved, so that the silicon wafer edge metal level is improved.