Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

272 results about "Boron nitride nanotube" patented technology

Boron nitride nanotubes (BNNTs) are a polymorph of boron nitride. They were predicted in 1994 and experimentally discovered in 1995. Structurally they are similar to carbon nanotubes, which are cylinders with sub-micrometer diameters and micrometer lengths, except that carbon atoms are alternately substituted by nitrogen and boron atoms. However, the properties of BN nanotubes are very different: whereas carbon nanotubes can be metallic or semiconducting depending on the rolling direction and radius, a BN nanotube is an electrical insulator with a bandgap of ~5.5 eV, basically independent of tube chirality and morphology. In addition, a layered BN structure is much more thermally and chemically stable than a graphitic carbon structure.

Polymer dielectric medium with low dielectric constant and low loss and preparation method of polymer dielectric medium

The invention discloses a polymer dielectric medium with low dielectric constant and low loss and a preparation method of the polymer dielectric medium. The polymer dielectric medium comprises the following raw materials: 50-60% of epoxy resin system, and 40-50% of mixed boron nitride nanoparticles, wherein the mixed boron nitride nanoparticle is a mixture of a boron nitride nanotube and a boron nitride nanotube; the epoxy resin system is formed by 100phr of epoxy resin E-51, 85phr of methyl hexahydrophthalic anhydride and 1phr of benzyl dimethylamine in a mixing manner. The thermal breakdown voltage of the polymer dielectric medium is significantly improved by the polymer dielectric material with high heat conductivity and high electric breakdown, the service life is prolonged, the dielectric constant and loss and the heat expansion coefficient are reduced, the mechanical strength and the tenacity are improved, the highest heat conductivity can be up to 5.26W/mK, the volume resistivity is about 1014ohm.cm, the thermal breakdown voltage is about 2-3kV/mm higher than that of the similar heat-conducting polymer dielectric medium, and the dielectric constant and the loss are a little lower than those of pure resin.
Owner:XIAN UNIV OF SCI & TECH

Preparation method of boron nitride nano tube with controllable dimension

The invention belongs to the field of inorganic nano material. The prior preparation method of a boron nitride nano tube has the problems of low production rate, high cost, complicated technology, difficult dimension control and the like. The preparation method comprises the steps: putting boron and a catalyst on the basis of weight ratio of 1 to (0.01 to 0.05) into a plastic bottle; using a nonaqueous solvent as a medium; ball-milling the boron and the catalyst for 8 to 24 hours; sieving the boron and the catalyst in a screen of 100 meshes after drying; heating a sieved mixture under the protection of argon gas; stopping leading the argon gas and leading nitrogen gas or the mixed gas of ammonia gas and the nitrogen gas when the temperature reaches 1000 DEG C to 1300 DEG C; keeping the temperature for 0.5 to 5 hours; reducing the temperature to room temperature after the constant temperature is finished; adding an obtained product to nitric acid for ultrasonic processing; removing the remained catalyst; and obtaining the boron nitride nano tube. The preparation method has the advantages of low cost, simple preparation technology, good repeatability and easy control and amplification of reaction; and the obtained boron nitride nano tube has the advantages of high production efficiency, easy purification, controllable tube diameter, controllable length and the like.
Owner:BEIJING UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products