Filament mechanism-based small-area electrode resistive random access memory and preparation method thereof

Abstract

The invention provides a filament mechanism-based small-area electrode resistive random access memory and a preparation method thereof; the structure of the resistive random access memory sequentiallycomprises a plurality of upper electrodes, an insulating dielectric film, a resistance change layer thin film, a lower electrode layer and a substrate layer from top to bottom, wherein the lower electrode layer and a resistance change layer are in ohmic contact; and the thermal breakdown voltage ET1 of the insulating dielectric film is smaller than ET2 of the resistance change layer film. The contact area of the upper electrodes and the resistance change material is reduced by forming the effective area of the conductive access, so that the reduction of the operation current / voltage is realized. According to the structure, there is no requirement on whether the selection of the electrode material can be in direct ohmic contact with the resistance change layer or not, so that the control of the generation position of the electrode access can be realized.

Description

technical field [0001] The invention belongs to the field of semiconductor resistive memory in ultra-large integrated scale, and specifically relates to a small-area electrode resistive memory with a filament mechanism and a preparation method thereof. Background technique [0002] Resistive variable memory is a new type of memory device that stores data by changing the resistance value of the resistive material by applying voltages of different polarities and magnitudes. Structurally, it mainly consists of an upper electrode, a resistive material and a lower electrode. Based on the position where the resistive switching process occurs, resistive memory is mainly divided into two categories, one is interface effect resistive memory, and its resistive switching process occurs at the non-ohmic contact layer interface of metal / semiconductor or semiconductor / semiconductor, and the other is In the bulk effect resistive memory, the upper and lower electrodes are in direct ohmic c...

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Problems solved by technology

[0008] However, in the prior art, the method of guiding the formation of electrode filaments to reduce the effective electrode area still has the following limitations. For example, the limitation of electrode material selection in background technology 3 requires not only the electrode material and resistive layer for forming electrode filaments Ohmic contact is naturally formed when in contact, and Al is also required to pass through SiO 2 Layer defects penetrate into the Si layer to make Si dissolve in Al to form electrode filaments, and the uncontrollability of the filament formation position

Background technology 3-4 In addition to the limitation that the electrode material forming the electrode filament is in contact with the resistive layer to naturally form an ohmic contact, the bulk phase structure of the resistive material is changed to enhance the uncertainty of the resistive behavior, and When the structure guiding the formation of conductive filaments is damaged, the above-mentioned devices are scrapped as a whole and cannot be used multiple times

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