36results about How to "Electrode area is small" patented technology

The invention discloses a manufacturing method of a thin film transistor and a transistor manufactured by the method, wherein the method is characterized by comprising the following steps: sequentially forming a surface covering layer, a polycrystalline silicon island active layer, a grid insulating layer, a grid electrode conducting layer and an auxiliary layer on a baseplate, photoetching the auxiliary layer to form an LDD forming layer, and forming a lightly doped drain electrode region, a heavily doped source electrode, a heavily doped drain electrode and a channel on the polycrystalline silicon island active layer by utilizing the action of the LDD forming layer and through only once doped ion implantation. The method of the invention only needs once ion implantation, simplifies the manufacturing working procedures and lowers the manufacturing cost; the thin film transistor which is manufactured by adopting the method and provided with a lightly doped drain electrode has the advantages of small electrode area and large numerical aperture.

The invention relates to a three-dimensional Pt-Pb nano floricome type enzyme-free glucose sensor electrode as well as preparation and application thereof. The electrode consists of a three-dimensional Pt-Pb nano floricome array on a stainless steel acupuncture needle substrate, wherein three-dimensional Pt-Pb nano floricomes exist on the surface of the electrode in a good crystallization form, and the diameter of the single nano floricome is 50-80nm. The preparation method comprises the following steps of: polishing a stainless steel acupuncture needle on deerskin; after the stainless steel acupuncture needle is repeatedly washed through secondary distilled water and processed through ultrasound, putting the stainless steel acupuncture needle in a PBS (Phosphate Buffer Solution) of whichthe pH is 7.0 to scan and activate for 10 circles through cyclic voltammetry; putting the stainless steel acupuncture needle into a hydrochloric acid electrolyte of 0.5mol / L, which consists of chloroplatinic acid and lead acetate by a ratio of 1:1; and preparing an electrode sample through an ultrasonic oscillation electro-deposition method. The three-dimensional Pt-Pb nano floricome type enzyme-free glucose sensor electrode has good electro-catalysis activity, wide linear response range and high sensitivity and selectivity.

The invention discloses an array substrate preparation method, an array substrate, and an organic light-emitting display device. The preparation method comprises the following steps: (1) sequentially forming a first metal layer, a first insulating material layer and a second metal layer, which cover a thin-film transistor region and a capacitor device region, on a substrate; and (2) etching the second metal layer, the first insulating material layer and the first metal layer with photoresist and a half-tone mask on the second metal layer, forming a source and a drain which are separated, a gate insulating layer and a bottom gate in the thin-film transistor region, and forming a second electrode, a first dielectric layer and a first electrode in the capacitor device region. Thus, the source, the drain, the gate insulating layer and the bottom gate of the thin-film transistor can be etched by one half-tone mask, the second electrode, the first dielectric layer and the first electrode of the capacitor device are formed at the same time, and the process is simplified. The array substrate of the invention has a dual-gate thin-film transistor and a capacitor device connected in parallel with two capacitors. The capacitor capacity is improved on the basis of increasing the driving force.

In an antenna and a semiconductor device including the antenna, an object is to reduce the distance between electrodes of a capacitor as much as possible, reduce the area of the electrode of the capacitor as much as possible, and prevent the suppression of response sensitivity and a response range of the semiconductor device. The present invention relates to an antenna including an antenna coil provided over a first region of a base and a capacitor which uses a second region of the base as a dielectric body and which has electrodes provided for opposite planes of the second region of the base, wherein the second region of the base is thinner than the first region of the base, and also relates to a semiconductor device including the antenna.

The present invention discloses an array substrate and a preparation method thereof, a display panel and a display device. The array substrate comprises a pixel circuit located on a substrate, and the pixel circuit at least comprises a driving transistor, a switch transistor and a first capacitor; the first electrode of the first capacitor is connected with the gate electrode of the driving transistor and the source of the switch transistor; the array substrate also comprises a passivation layer covering the first electrode of the first capacitor, the passivation layer is provided with a second electrode of the first capacitor in a groove arranged at an area corresponding to the first electrode of the first capacitor compared to that the second electrode is arranged on the passivation layer, the distance between the first electrode and the second electrode is reduced, and the storage content of the capacitor is increased so as to realize arrangement of a small electrode area while ensuring the capacitor storage, increase the aperture ratio of the array substrate and add the display quality.

The invention discloses a high efficiency luminescence diode and method for preparation. The high efficiency luminescence diode at least comprises a permanent base plate, a first and a second contacting metal layers, a junction layer, a diffusion barrier layer, a reflection metal layer, a transparent conductive oxide layer, a luminescence extension structure and an electrical second composite electrode pad, wherein the first and a second contacting metal layers are respectively arranged on two relative surfaces of the permanent base plate, the junction layer is arranged on the second contacting metal layer, the diffusion barrier layer is arranged on the junction layer, and the permanent base plate, the junction layer and the diffusion barrier layer are capable of conducting. The reflection metal layer is arranged on the diffusion barrier layer, the transparent conductive oxide layer is arranged on the reflection metal layer, the luminescence extension structure is arranged on the transparent conductive oxide layer and is equipped with a first and a second surfaces, and the electrical second composite electrode pad is arranged on the second surface of the luminescence extension structure.

A tuning-fork vibration gyro including a ferroelectric tuning-fork vibration body generating a plurality of sensor signals and a sensor circuit to which the sensor signals generated by the tuning-fork vibration body are input. The sensor circuit includes a differential amplifier having two input terminals between which the sensor signals are input, and a capacitor being connected between the two input terminals of the differential amplifier.

The invention provides a novel semiconductor conic laser device, namely a surface electrode structure, solves a problem of poor light beam quality during high current injection of an integrated electrode conic laser device in the prior art and further solves problems of poor heat radiation and complex manufacturing process of a separated electrode conic laser device in the prior art. According to the semiconductor conic laser device, a ridge-type waveguide surface electrode is cut into segments, a part of the electrode on a ridge-type waveguide surface is removed, an electrode area of the ridge-type waveguide surface is reduced, so current components injected into a ridge-type waveguide can be reduced when an anode power source electrode is integrally crimped at a ridge-type zone portion of a P-surface electrode, current density of an active zone of the ridge-type waveguide is reduced, and light beam quality of the conic laser device is improved under the condition of high current injection. The novel semiconductor conic laser device is advantaged in that advantages of two types of conic laser devices in the prior art are integrated, and properties of low injection current, simple manufacturing, good heat radiation and good light beam quality of the ridge-type waveguide are realized.

An ear plug (1) for arrangement in an ear canal includes at least two electrodes (3) for detecting an EEG signal from a skin surface when the ear plug is arranged in the ear canal. The ear plug further includes a housing having an outer wall (2) made from a resilient material, and a signal acquisition circuit (23). The electrodes (3) are provided with a skin contact part (4) arranged on an outside surface of the housing and connected through the outer wall (2) of the housing to a supporting member (5) on the inner part of the housing. The skin contact part (4) and the supporting member (5) are arranged for clamping the outer wall (2).

The invention provides a resistive random access memory and a preparation method thereof. The resistive random access memory is formed on a substrate. The resistive random access memory comprises a first electrode, resistive random materials and a second electrode, the first electrode, the resistive random materials and the second electrode are arranged on the surface of the substrate, the first electrode and the second electrode are arranged oppositely, and the resistive random materials are arranged between the first electrode and the second electrode, and simultaneously contacted with the first electrode and the second electrode. The area of the contacting surface of the first electrode and the substrate is larger than that of a first contacting surface of the first electrode and the resistive random materials, and / or the area of the contacting surface area of the second electrode and the substrate is larger than that of a second contacting surface of the second electrode and the resistive random materials. The resistive random access memory has the advantages of being small in operating current, low in power consumption, and the like.

A stacked dielectric filter includes a filter section (20) which has first and second input side resonant electrodes (16a, 16b) and first and second output side resonant electrodes (18a, 18b) of two 1 / 4 wavelength resonators, a converting section (28) which has a plurality of strip lines (22, 24, 26), and a connecting section (30) which connects the filter section (20) and the converting section (28), wherein the filter section (20), the converting section (28), and the connecting section (30) are formed in a dielectric substrate (14). The filter section (20) is formed at an upper portion in the stacking direction of dielectric layers. The converting section (28) is formed at a lower portion in the stacking direction. The connecting section (30) is formed between the filter section (20) and the converting section (28).

A passive component is provided with a filter section employing a nonequilibrium input / output system, which has an input side resonator connected to a nonequilibrium input terminal, and an output side resonator coupled with the input side resonator; and a converting section having two double line coupled lines. An output stage of the filter section is connected with an input stage of the converting section through a first capacitor, and an input stage of the filter section is connected with the input stage of the converting section through a second capacitor. Namely, the second capacitor functions as a jump capacitor. The position of an attenuation pole is permitted to be adjusted by a second capacitor in a region low in frequency characteristics.

The invention provides a structure and a method for manufacturing a high-efficiency high-voltage vertical through hole bonding type light emitting diode (LED) chip. The structure comprises at least one chip and a bottom plate, wherein the chip comprises a substrate and a luminous epitaxial layer grown on the substrate surface, the substrate is provided with a first surface and a second surface opposite to the first surface, a reflecting layer is formed on the second surface of the substrate, a bottom plate with good heat radiation performance is bonded on the reflecting layer formed on the second surface of the substrate through wafers, and the luminous epitaxial layer is formed on the first surface, wherein light emitted by the luminous epitaxial layer comprises light spread in a direction far away from the substrate and light spread in a direction towards the substrate, the light spread in the direction towards the substrate is at least partially transmitted from the substrate and is then reflected by the reflecting layer, and at least one electrode of the luminous epitaxial layer is connected with the bottom plate through a through hole. The invention also provides the high-efficiency high-voltage vertical through hole bonding type LED chip manufactured by the method.

The objective of the present invention is to provide a coordinate input device having a high response speed at the time of detection, and having reduced power consumption. This capacitance-type coordinate input device is provided with: a first electrode group comprising a plurality of first electrode arrays arranged at a predetermined interval; and a second electrode group comprising a plurality of second electrode arrays arranged at a predetermined interval, wherein the first electrode group and the second electrode group are isolated, and laid in order to intersect each other, the first electrode arrays comprise a plurality of first electrodes connected in the first direction, the second electrode arrays comprise a plurality of second electrodes connected in the second direction, the first electrodes are arranged to be offset from the second electrodes in the plan view, and the shape of the first electrode and the shape of the second electrode are annular shapes.

The invention discloses a multi-pixel ultra-small capacitance X-ray detection unit and a detector, the multi-pixel ultra-small capacitance X-ray detection unit comprises an n-type silicon substrate, the top surface of the n-type silicon substrate is provided with a P + cathode, and the bottom surface of the n-type silicon substrate is provided with an n + anode; a first silicon dioxide rectangularframe is arranged on the top surface of the n-type silicon substrate; a second silicon dioxide rectangular frame is arranged in the first silicon dioxide rectangular frame; a first P + heavily-dopedion implantation region is formed between the first substrate and the second substrate; a second P + heavily doped ion implantation region is formed in the second silicon dioxide rectangular frame; and a gap for communicating the first P + heavily doped ion implantation region with the second P + heavily doped ion implantation region to form a P + cathode is formed in the second silicon dioxide rectangular frame, the gap is a third P + heavily doped ion implantation region, and a cathode aluminum layer is plated on the second P + heavily doped ion implantation region. The multi-pixel ultra-small capacitance X-ray detector is composed of a plurality of multi-pixel ultra-small capacitance X-ray detection units which are distributed in an array mode, and the electrode area and the capacitancevalue are small.

The invention discloses a flip light-emitting diode, and the light-emitting diode comprises a transparent substrate, a first semiconductor layer, a light-emitting layer, a second semiconductor layer and a third semiconductor layer, three mutually independent areas are formed; the first region exposes the first semiconductor layer; the third semiconductor layer in the second region is etched and removed to expose the second semiconductor layer; a part of the third semiconductor layer in the third region is etched and removed to expose a part of the second semiconductor layer; a first contact electrode is arranged on the surface of the first semiconductor layer in the first region, a second contact electrode is arranged on the surface of the second semiconductor layer in the second region, and a third contact electrode and a fourth contact electrode are arranged on the surfaces of the third semiconductor layer and the second semiconductor layer in the third region; the fourth contact electrode is connected with the first semiconductor layer at the same time. The light-emitting diode also comprises a first metal welding layer which is electrically connected with the first contact electrode, and a second metal welding layer which is electrically connected with the second contact electrode and the third contact electrode. The flip light-emitting diode has the advantages of high brightness, strong antistatic capability and the like.

An electrochemistry detection cell belongs to the technical field of electrochemistry, and aims to overcome defects of most conventional electrochemistry detection cells made of glass, such as easiness in breaking, convenience in use, incongruity in detection of piece-shaped electrodes and the like. The electrochemistry detection cell comprises two parts including a cell body (1) and a cell bottom (2), wherein the cell body (1) is a cavity formed by a cylindrical cell (3) and a round disk-shaped base (4) which are coaxial; a slim hole (5) is formed at the upper part of the lateral wall of the cylindrical cell (3); a copper column (6) is arranged on the round disk-shaped base (4); and the round disk-shaped base is connected with the cell bottom (2) via a screw. The electrochemistry detection cell is simple and smart in design, and is well contacted with the piece-shaped electrodes by utilizing an elastic copper column (6), has high practicability, is less in consumption of reagent for test, firm and low in breaking probability, and can fix the electrodes and detect the practical detection area thereof, so as to establish a good foundation of accurate quantitative analysis and calculation.

The invention relates to a display panel. The display panel comprises a first substrate and a second substrate which are relative to each other, and a liquid crystal layer which is arranged on the middle of the first substrate and the second substrate. The display panel also consists of a plurality of pixel structures and a black matrix. The pixel structures, which are arranged on a first surface of the first substrate, include a first driving electrode which consists of a first junction, a plurality of first branch electrodes, and a plurality of first end electrodes. For each of the first branch electrodes, its electrical property of a first end is connected with the first junction, while the electrical property of a second end is connected with the first end electrode. The first end and the second end are relative to each other. The black matrix is positioned on a second surface of the second substrate. The second surface is relative to the first surface. The black matrix, in the thickness direction of the first substrate, is provided with vertical projection on the first surface. There are some overlaps between the fist junction and the vertical projection. The display panel disclosed by the invention is provided with high ray transmittance.

The invention relates to a light-emitting diode unit, which comprises a substrate, a first crystalline grain structure, at least one second crystalline grain structure and a third crystalline grain structure. The first crystalline grain structure, the second crystalline grain structure and the third crystalline grain structure are separately arranged on the substrate, the first crystalline grain structure comprises a first positive electrode and a first negative electrode, the second crystalline grain structure comprises a second positive electrode and a second negative electrode, and the third crystalline grain structure comprises a third positive electrode and a third negative electrode. The first crystalline grain structure, the second crystalline grain structure and the third crystalline grain structure are sequentially connected in series, moreover, the area of the third positive electrode is far larger than the areas of the second positive electrode and the first positive electrode, the area of the first negative electrode is far larger than the areas of the third negative electrode and the second negative electrode, consequently, a user can conveniently carry out line configuration for the light-emitting diode unit by means of the first negative electrode and the third positive electrode, and the effective light-emitting area of the light-emitting diode unit also can be enlarged.

The invention relates to a material for detecting indoor organic gas and a method for preparing a gas-sensitive element using the same. The material comprises the following components by weight percent: 3-8 percent of silver nitrate, 4-11 percent of cadmium nitrate and the balance of SnO2 base material. The gas-sensitive element which is prepared by the sensitive material and is used for detecting indoor organic gas can detect residual micro organic gas after indoor decoration, has a better sensitive signal, can greatly reduce the detection limiting concentration of the organic gas, has small volume and is beneficial to micromation.

The invention discloses a high efficiency luminescence diode and a method for preparation. The high efficiency luminescence diode at least comprises a permanent base plate, a first and a second contacting metal layers, a junction layer, a diffusion barrier layer, a reflection metal layer, a transparent conductive oxide layer, a luminescence extension structure and an electrical second composite electrode pad, wherein the first and the second contacting metal layers are respectively arranged on two relative surfaces of the permanent base plate, the junction layer is arranged on the second contacting metal layer, the diffusion barrier layer is arranged on the junction layer, and the permanent base plate, the junction layer and the diffusion barrier layer are capable of conducting. The reflection metal layer is arranged on the diffusion barrier layer, the transparent conductive oxide layer is arranged on the reflection metal layer, the luminescence extension structure is arranged on the transparent conductive oxide layer and is equipped with a first and a second surfaces, and a second electrical composite electrode pad is arranged on the second surface of the luminescence extension structure.

The invention discloses a microbial electrosynthesis reactor for electrolytic hydrogen gas bubble tower and its use method. The reactor consists of an electrolytic cell at the bottom, a bubble tower at the upper end, and a gas-liquid contact vacuum fiber on the catholyte external circulation system. Composed of membrane modules and pH controllers. The electrolytic cell placed at the bottom of the reactor provides micro-nano hydrogen bubbles for the bubble tower, and the microorganisms suspended in the bubble tower convert hydrogen and CO 2 into corresponding organic compounds. The device of the present invention is suitable for H 2 mediated microbial CO 2 Fixed process, also available for H 2 Driven wastewater microbial nitrogen removal process. Compared with the traditional microbial electrosynthesis system based on the biofilm on the electrode surface, the present invention has the advantages of high electrode current density, high coulombic efficiency, fast reactor start-up time, high production intensity, high system stability and the like. Compared with the traditional gas fermentation reactor based on exogenous hydrogen, the present invention realizes the in-situ supply of micro-nano hydrogen bubbles, and avoids the storage and transportation of hydrogen and the energy consumption of generating micro-nano hydrogen bubbles.

A light-emitting diode, characterized in that it includes at least: a light-emitting epitaxial structure with a first surface and a second surface opposite to each other; a first electrical ohmic contact layer arranged on the first surface and having a pattern chemical structure; a first ohmic contact metal layer, disposed on the first electrical ohmic contact layer; a reflective metal layer, disposed on the first ohmic contact metal layer; a permanent substrate; and a diffusion barrier layer, located between the permanent substrate and the reflective metal layer.

An electrode for use in a deionization apparatus is provided and is formed of (1) at least one polymerization monomer selected from the group consisting of phenol, furfural alcohol, dihydroxy benzenes; trihydroxy benzenes; dihydroxy naphthalenes and trihydroxy naphthalnes and mixtures thereof; (2) a crosslinker; and (3) a catalyst; or reaction products thereof, together in a carbonized form that is free of a carbon fiber reinforcing agent.

The invention relates to a direct forming production method for a lithium ion battery cathode. The method comprises the following steps of: 1) mixing 30 to 70 percent of lithium ion battery cathode active substance, 10 to 50 percent of conductive fiber and 1 to 20 percent of adhesive in percentage by mass in a reaction kettle respectively, wherein the temperature is controlled between 20 and 50 DEG C, the stirring speed is 60 to 300 revolutions per minute and the mixing is performed for 1 to 10 hours; and 2) pressing the mixture in a piece press to obtain an integrally formed lithium ion battery cathode pole piece, wherein the temperature is controlled between 70 and 120 DEG C and the pressure is 50 to 200MPa. The method has simple process; compared with the pole piece produced by a traditional method, the pole piece has the advantages of good forming property, low density and small volume; and the method can greatly reduce the weight and the volume of the pole piece. The method for producing the electrode pole piece can effectively reduce the thickness of the pole piece so as to improve the diffusion coefficient of lithium ions in the cathode and improve the electric capacity of a battery; and the active substance is uniformly contacted with the adhesive and organic electrolyte to prepare a high-density electrode so as to reduce the electrode area of side reaction in the charging / discharging process, prolong the service life of the battery and improve the stability of the battery.

The invention relates to a micro-microbial fuel cell and a preparation method thereof, belonging to the technical field of microbial fuel cells. The battery uses cotton thread I soaked in an oxidant solution as a cathode cell, and cotton thread II soaked in a bacterial solution as an anode cell. The cotton thread One end of I is wrapped by carbon cloth I and drawn out by wire I to form a cathode, the other end of cotton thread I is intertwined with one end of cotton thread II to form an ion exchange area, and the ion exchange area is wrapped by carbon cloth II and drawn out by wire II The anode is formed, and the ion exchange area wrapped by carbon cloth II is located in the closed space formed by insulating plate I and insulating plate II. The battery does not need an external pump, has the advantages of high current density, small internal resistance, simple preparation process, easy-to-obtain raw materials, and low price, and is suitable for industrial production.

The invention provides a method for preparing a phospholipid nano / micron tube by using a finger-shaped micro-electrode and relates to a preparation method of a phospholipid tube. A plane finger-shaped micro-electrode is utilized and an electric forming method is used for realizing the preparation of the phospholipid tube in a certain solution height range, a certain alternating-current voltage range, a certain frequency range and a certain reaction time range; the shape of the phospholipid tube is good and the yield is higher; and the method can be widely applied to relative biological membrane properties of the fields including cell biology, membrane biophysics, biochemistry, bionics and the like, and can be applied to researches and application of cell simulation, medical carriers, target feeding and the like. The method disclosed by the invention fills in the blank of the preparation method of the phospholipid tube, enlarges the preparation range in a breakthrough manner, and has the advantages of small electrode area, low energy consumption, fast growing speed, short preparation period, simplicity in operation, moderate reaction conditions, small pollution to the environment, good controllability of the length and the diameter of the phospholipid tube and the like.