36results about How to "Electrode area is small" patented technology

The invention discloses a manufacturing method of a thin film transistor and a transistor manufactured by the method, wherein the method is characterized by comprising the following steps: sequentially forming a surface covering layer, a polycrystalline silicon island active layer, a grid insulating layer, a grid electrode conducting layer and an auxiliary layer on a baseplate, photoetching the auxiliary layer to form an LDD forming layer, and forming a lightly doped drain electrode region, a heavily doped source electrode, a heavily doped drain electrode and a channel on the polycrystalline silicon island active layer by utilizing the action of the LDD forming layer and through only once doped ion implantation. The method of the invention only needs once ion implantation, simplifies the manufacturing working procedures and lowers the manufacturing cost; the thin film transistor which is manufactured by adopting the method and provided with a lightly doped drain electrode has the advantages of small electrode area and large numerical aperture.

In an antenna and a semiconductor device including the antenna, an object is to reduce the distance between electrodes of a capacitor as much as possible, reduce the area of the electrode of the capacitor as much as possible, and prevent the suppression of response sensitivity and a response range of the semiconductor device. The present invention relates to an antenna including an antenna coil provided over a first region of a base and a capacitor which uses a second region of the base as a dielectric body and which has electrodes provided for opposite planes of the second region of the base, wherein the second region of the base is thinner than the first region of the base, and also relates to a semiconductor device including the antenna.

The present invention discloses an array substrate and a preparation method thereof, a display panel and a display device. The array substrate comprises a pixel circuit located on a substrate, and the pixel circuit at least comprises a driving transistor, a switch transistor and a first capacitor; the first electrode of the first capacitor is connected with the gate electrode of the driving transistor and the source of the switch transistor; the array substrate also comprises a passivation layer covering the first electrode of the first capacitor, the passivation layer is provided with a second electrode of the first capacitor in a groove arranged at an area corresponding to the first electrode of the first capacitor compared to that the second electrode is arranged on the passivation layer, the distance between the first electrode and the second electrode is reduced, and the storage content of the capacitor is increased so as to realize arrangement of a small electrode area while ensuring the capacitor storage, increase the aperture ratio of the array substrate and add the display quality.

The invention discloses a high efficiency luminescence diode and method for preparation. The high efficiency luminescence diode at least comprises a permanent base plate, a first and a second contacting metal layers, a junction layer, a diffusion barrier layer, a reflection metal layer, a transparent conductive oxide layer, a luminescence extension structure and an electrical second composite electrode pad, wherein the first and a second contacting metal layers are respectively arranged on two relative surfaces of the permanent base plate, the junction layer is arranged on the second contacting metal layer, the diffusion barrier layer is arranged on the junction layer, and the permanent base plate, the junction layer and the diffusion barrier layer are capable of conducting. The reflection metal layer is arranged on the diffusion barrier layer, the transparent conductive oxide layer is arranged on the reflection metal layer, the luminescence extension structure is arranged on the transparent conductive oxide layer and is equipped with a first and a second surfaces, and the electrical second composite electrode pad is arranged on the second surface of the luminescence extension structure.

A tuning-fork vibration gyro including a ferroelectric tuning-fork vibration body generating a plurality of sensor signals and a sensor circuit to which the sensor signals generated by the tuning-fork vibration body are input. The sensor circuit includes a differential amplifier having two input terminals between which the sensor signals are input, and a capacitor being connected between the two input terminals of the differential amplifier.

An ear plug (1) for arrangement in an ear canal includes at least two electrodes (3) for detecting an EEG signal from a skin surface when the ear plug is arranged in the ear canal. The ear plug further includes a housing having an outer wall (2) made from a resilient material, and a signal acquisition circuit (23). The electrodes (3) are provided with a skin contact part (4) arranged on an outside surface of the housing and connected through the outer wall (2) of the housing to a supporting member (5) on the inner part of the housing. The skin contact part (4) and the supporting member (5) are arranged for clamping the outer wall (2).

A stacked dielectric filter includes a filter section (20) which has first and second input side resonant electrodes (16a, 16b) and first and second output side resonant electrodes (18a, 18b) of two 1/4 wavelength resonators, a converting section (28) which has a plurality of strip lines (22, 24, 26), and a connecting section (30) which connects the filter section (20) and the converting section (28), wherein the filter section (20), the converting section (28), and the connecting section (30) are formed in a dielectric substrate (14). The filter section (20) is formed at an upper portion in the stacking direction of dielectric layers. The converting section (28) is formed at a lower portion in the stacking direction. The connecting section (30) is formed between the filter section (20) and the converting section (28).

A passive component is provided with a filter section employing a nonequilibrium input/output system, which has an input side resonator connected to a nonequilibrium input terminal, and an output side resonator coupled with the input side resonator; and a converting section having two double line coupled lines. An output stage of the filter section is connected with an input stage of the converting section through a first capacitor, and an input stage of the filter section is connected with the input stage of the converting section through a second capacitor. Namely, the second capacitor functions as a jump capacitor. The position of an attenuation pole is permitted to be adjusted by a second capacitor in a region low in frequency characteristics.

The invention provides a structure and a method for manufacturing a high-efficiency high-voltage vertical through hole bonding type light emitting diode (LED) chip. The structure comprises at least one chip and a bottom plate, wherein the chip comprises a substrate and a luminous epitaxial layer grown on the substrate surface, the substrate is provided with a first surface and a second surface opposite to the first surface, a reflecting layer is formed on the second surface of the substrate, a bottom plate with good heat radiation performance is bonded on the reflecting layer formed on the second surface of the substrate through wafers, and the luminous epitaxial layer is formed on the first surface, wherein light emitted by the luminous epitaxial layer comprises light spread in a direction far away from the substrate and light spread in a direction towards the substrate, the light spread in the direction towards the substrate is at least partially transmitted from the substrate and is then reflected by the reflecting layer, and at least one electrode of the luminous epitaxial layer is connected with the bottom plate through a through hole. The invention also provides the high-efficiency high-voltage vertical through hole bonding type LED chip manufactured by the method.

The invention discloses a multi-pixel ultra-small capacitance X-ray detection unit and a detector, the multi-pixel ultra-small capacitance X-ray detection unit comprises an n-type silicon substrate, the top surface of the n-type silicon substrate is provided with a P + cathode, and the bottom surface of the n-type silicon substrate is provided with an n + anode; a first silicon dioxide rectangularframe is arranged on the top surface of the n-type silicon substrate; a second silicon dioxide rectangular frame is arranged in the first silicon dioxide rectangular frame; a first P + heavily-dopedion implantation region is formed between the first substrate and the second substrate; a second P + heavily doped ion implantation region is formed in the second silicon dioxide rectangular frame; and a gap for communicating the first P + heavily doped ion implantation region with the second P + heavily doped ion implantation region to form a P + cathode is formed in the second silicon dioxide rectangular frame, the gap is a third P + heavily doped ion implantation region, and a cathode aluminum layer is plated on the second P + heavily doped ion implantation region. The multi-pixel ultra-small capacitance X-ray detector is composed of a plurality of multi-pixel ultra-small capacitance X-ray detection units which are distributed in an array mode, and the electrode area and the capacitancevalue are small.

The invention discloses a flip light-emitting diode, and the light-emitting diode comprises a transparent substrate, a first semiconductor layer, a light-emitting layer, a second semiconductor layer and a third semiconductor layer, three mutually independent areas are formed; the first region exposes the first semiconductor layer; the third semiconductor layer in the second region is etched and removed to expose the second semiconductor layer; a part of the third semiconductor layer in the third region is etched and removed to expose a part of the second semiconductor layer; a first contact electrode is arranged on the surface of the first semiconductor layer in the first region, a second contact electrode is arranged on the surface of the second semiconductor layer in the second region, and a third contact electrode and a fourth contact electrode are arranged on the surfaces of the third semiconductor layer and the second semiconductor layer in the third region; the fourth contact electrode is connected with the first semiconductor layer at the same time. The light-emitting diode also comprises a first metal welding layer which is electrically connected with the first contact electrode, and a second metal welding layer which is electrically connected with the second contact electrode and the third contact electrode. The flip light-emitting diode has the advantages of high brightness, strong antistatic capability and the like.

An electrochemistry detection cell belongs to the technical field of electrochemistry, and aims to overcome defects of most conventional electrochemistry detection cells made of glass, such as easiness in breaking, convenience in use, incongruity in detection of piece-shaped electrodes and the like. The electrochemistry detection cell comprises two parts including a cell body (1) and a cell bottom (2), wherein the cell body (1) is a cavity formed by a cylindrical cell (3) and a round disk-shaped base (4) which are coaxial; a slim hole (5) is formed at the upper part of the lateral wall of the cylindrical cell (3); a copper column (6) is arranged on the round disk-shaped base (4); and the round disk-shaped base is connected with the cell bottom (2) via a screw. The electrochemistry detection cell is simple and smart in design, and is well contacted with the piece-shaped electrodes by utilizing an elastic copper column (6), has high practicability, is less in consumption of reagent for test, firm and low in breaking probability, and can fix the electrodes and detect the practical detection area thereof, so as to establish a good foundation of accurate quantitative analysis and calculation.

A light-emitting diode, characterized in that it includes at least: a light-emitting epitaxial structure with a first surface and a second surface opposite to each other; a first electrical ohmic contact layer arranged on the first surface and having a pattern chemical structure; a first ohmic contact metal layer, disposed on the first electrical ohmic contact layer; a reflective metal layer, disposed on the first ohmic contact metal layer; a permanent substrate; and a diffusion barrier layer, located between the permanent substrate and the reflective metal layer.