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A light-emitting diode and ohmic contact technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of light-emitting diode components such as the decrease of luminous brightness and the increase of opaque area

Inactive Publication Date: 2011-12-07
EPISTAR CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the electrodes are opaque, the increase in the area of ​​the electrodes will lead to a

Method used

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Embodiment Construction

[0020] The invention proposes a high-efficiency light-emitting diode, which can improve the light-emitting brightness of the light-emitting diode assembly, and can improve the operation reliability and stability of the light-emitting diode assembly. In order to make the description of the present invention more detailed and complete, reference may be made to the following descriptions and Figure 1 to Figure 8 icon of the .

[0021] Please refer to Figure 1 to Figure 8 , which is a process cross-sectional view of a high-efficiency light-emitting diode according to a preferred embodiment of the present invention. In an exemplary embodiment of the present invention, when manufacturing the light emitting diode device, the growth substrate 100 is firstly provided, and then the etch stop layer 152 is directly grown on the surface of the growth substrate 100 by, for example, deposition. Next, a first electrical ohmic contact layer 126 is formed on the etch stop layer 152 , wherein ...

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Abstract

A light-emitting diode, characterized in that it includes at least: a light-emitting epitaxial structure with a first surface and a second surface opposite to each other; a first electrical ohmic contact layer arranged on the first surface and having a pattern chemical structure; a first ohmic contact metal layer, disposed on the first electrical ohmic contact layer; a reflective metal layer, disposed on the first ohmic contact metal layer; a permanent substrate; and a diffusion barrier layer, located between the permanent substrate and the reflective metal layer.

Description

[0001] This application is a divisional application of an invention patent application whose applicant is Epistar Optoelectronics Co., Ltd., with an application date of January 17, 2007, an application number of 200710002410.X, and an invention title of "High Efficiency Light-Emitting Diode and Its Manufacturing Method" . technical field [0002] The invention relates to a light-emitting diode (LED) and a manufacturing method thereof, in particular to a high-efficiency light-emitting diode and a manufacturing method thereof. Background technique [0003] In the production of light-emitting diodes, III-V semiconductor compounds, such as gallium phosphide (GaP), gallium arsenic phosphide (GaAsP), gallium indium phosphide (GaInP), aluminum gallium arsenide (AlGaAs) or aluminum gallium phosphide (AlGaP) and aluminum gallium indium phosphide (AlGaInP) are quite common materials. Generally, the conventional light-emitting diode structure uses N-type gallium arsenide (GaAs) as the...

Claims

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Application Information

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IPC IPC(8): H01L33/02H01L33/00
Inventor 洪详竣
Owner EPISTAR CORP
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