13 results about "Gallium phosphide" patented technology

The invention discloses a polarization multiplexing all-dielectric metasurface structure color device based on gallium phosphide. The device is composed of periodically arranged metasurface units, and each unit sequentially comprises a transparent quartz substrate 1, a TiO2 reflecting layer 2 and an all-dielectric nano resonator located on the TiO2 reflecting layer 2 from bottom to top. The nano resonator is composed of a GaP nano column 3 and a SiO2 impedance matching layer 4 covering the top of the GaP nano column 3. The material cost is low, the manufacturing process is mature, and the designed device shows obvious optical response difference under irradiation of different polarized lights. By utilizing the characteristics of high refractive index and low loss of a gallium phosphide material in a medium-long wave region of visible light, a single reflection peak of which the reflection efficiency is up to 99% and the bandwidth is less than 16nm is realized under X polarization of a visible light wave band; and a stable multi-peak spectrum is formed under Y polarization to serve as a spectrum fingerprint, so that high-quality display and polarization multiplexing functions are realized in the same device. The device is suitable for the fields of high-color-gamut display, optical anti-counterfeiting and the like.

The application provides a composite lithium negative electrode material for a solid-state lithium metal battery and a preparation method and application thereof, the preparation raw material of the composite lithium negative electrode material comprises an additive, lithium metal and a solid-state electrolyte; the additive is selected from one or more of gallium phosphide, indium phosphide, tin phosphide, iron phosphide, cobalt phosphide, nickel phosphide, molybdenum phosphide, manganese phosphide, black phosphorus and red phosphorus. The composite lithium negative electrode material prepared by using the additive has good wettability to the solid-state electrolyte sheet, significantly reduces the interface resistance between the solid-state electrolyte and the lithium metal negative electrode, improves the critical current density and the cycle stability, is very close to the solid-state electrolyte sheet at the interface, has good matching with a commercial lithium iron phosphate positive electrode, and the assembled full battery has excellent rate performance and cycle performance.

The application relates to an optical nano antenna, in particular to a multi-wavelength one-way scattering optical nano antenna based on a gallium phosphide arrowhead type, wherein the multi-wavelength one-way scattering optical nano antenna is an arrowhead type nano antenna, the material of the arrowhead type nano antenna is gallium phosphide, the included angle a of the arrowhead type nano antenna is 15 DEG, the length of two sides of the arrowhead G is 303 nm, the width of the arrow tail M is 40 nm, the length of the arrow tail L is 100 nm, the thickness H of the arrowhead type nano antenna is 420 nm, the background refractive index of the arrowhead type nano antenna is a constant 1, the incident light of the arrowhead type nano antenna is a plane wave, the wave vector is parallel to the z-axis direction, and the polarization is parallel to the x-axis direction. The nano antenna is composed of the arrowhead type of the high-refractive-index material gallium phosphide, under the excitation of the incident plane wave, the wave vector is parallel to the z-axis direction, and the polarization is parallel to the x-axis direction. The structure is a structure capable of supporting electric resonance and magnetic resonance.

A solid-state imaging device according to an embodiment includes: a semiconductor substrate including a photoelectric conversion element; a lens disposed above a first light incident surface of the photoelectric conversion element; and a plurality of columnar structures disposed on a surface parallel to the first light incident surface that is located between a second light incident surface of the lens and the first light incident surface of the photoelectric conversion element. The columnar structure includes at least one of silicon, germanium, gallium phosphide, aluminum oxide, cerium oxide, hafnium oxide, indium oxide, tin oxide, niobium pentoxide, magnesium oxide, tantalum pentoxide, titanium pentoxide, titanium oxide, tungsten oxide, yttrium oxide, zinc oxide, zirconia, cerium fluoride, gadolinium fluoride, lanthanum fluoride, and neodymium fluoride.

The invention belongs to the technical field of photoelectricity, and discloses a cascade multiplication linear mode silicon APD array chip and a preparation method thereof, the cascade multiplication linear mode silicon APD array chip comprises a substrate layer and a plurality of pixel structure units arranged on the substrate layer in an array; the substrate layer is made of P-type doped gallium phosphide; each pixel structure unit comprises a p + buffer layer, an intrinsic absorption layer, a cascade multiplication layer and an n + contact layer which are sequentially arranged from bottom to top; the top of the pixel structure unit and the substrate layer are respectively provided with a contact electrode. According to the silicon APD array chip provided by the invention, P-type gallium phosphide with relatively wide forbidden bandwidth is adopted as the substrate, so that the silicon APD array chip provided by the invention can realize back light incidence and a relatively thin silicon absorption layer design. According to the invention, the cascade multiplication layer with multi-stage periodic doping based on the relaxation space gain theory is also adopted, the collision ionization coefficient of holes is inhibited, the ionization coefficient ratio is reduced, and thus the gain of the silicon APD array pixel is improved.

The application relates to the field of metal recovery, and particularly discloses a method for comprehensively recovering indium, gallium and phosphorus from oily cutting mixed waste, which comprises the following steps: oxidizing and calcining the oily cutting mixed waste to obtain mixed oxides; grinding and pulping the mixed oxides with dilute sulfuric acid to obtain a pulping mixed solution; performing mineral slurry diaphragm electrolysis leaching on the pulping mixed solution, obtaining a sulfuric acid electrolysis leaching solution containing In2(SO4)3, Ga2(SO4)3 and H3PO4 in a cathode area, obtaining an electrodeposited indium on the cathode, and obtaining anode mud deposits containing silicon dioxide and di-aluminum trioxide in an anode area and on an anode; extracting indium from the sulfuric acid electrolysis leaching solution, neutralizing and then hydrolyzing and precipitating gallium in the indium extraction residual liquid, and then continuously neutralizing and precipitating calcium phosphate or superphosphate by using lime water or calcium oxide; and the application has the characteristics of efficiently, low-cost and pollution-free comprehensive recovery of indium, gallium and phosphorus from waste containing silicon dioxide, di-aluminum trioxide, oil and grease, indium phosphide and gallium phosphide.

Disclosed in the present invention is an AlGaInP yellow-green LED epitaxial wafer with high brightness, low leakage and high reliability. The epitaxial wafer comprises an N-type GaAs buffer layer, an N-type GaInP etch-stop layer, an N-type GaAs ohmic contact layer, an N-type AlGaInP current spreading layer, an N-type electron retardation layer, an N-type AlInP confinement layer, a multiple quantum well layer, a P-type AlInP confinement layer, a P-type GaP current spreading layer and a P-type GaP ohmic contact layer, which are sequentially grown on a GaAs substrate. An electron retardation layer, a graded quantum barrier thickness design, and a magnesium diffusion barrier layer are introduced, so as to effectively suppress electron leakage and magnesium diffusion, thereby reducing non-radiative recombination, and thus significantly improving the luminous efficiency and high-temperature operating stability of LEDs.

The invention provides a flip-chip light emitting diode. The flip-chip light emitting diode comprises a base material, a light emitting structure, a P-type electrode structure and an N-type electrode structure, the light-emitting structure is located on the substrate and comprises a gallium phosphide layer and a semiconductor epitaxial structure, and the gallium phosphide layer is located between the substrate and the semiconductor epitaxial structure. The semiconductor epitaxial structure comprises a P-type current distribution layer, a light-emitting layer, an N-type semiconductor layer and a transparent ohmic contact layer which are sequentially formed. The P-type electrode structure is located on the gallium phosphide layer of the light-emitting structure, and the N-type electrode structure is located on the transparent ohmic contact layer. Wherein the N-type semiconductor layer comprises a distributed Bragg reflector, and the distributed Bragg reflector is located between the light-emitting layer and the N-type electrode structure.

The invention relates to the field of metal recovery, and particularly discloses a method for comprehensively recovering indium, gallium and phosphorus from oily cutting mixed waste, which comprises the following steps: oxidizing and calcining the oily cutting mixed waste to obtain a mixed oxide; grinding and pulping the mixed oxide by adopting dilute sulphuric acid to obtain a pulpified mixed solution; the pulpified mixed solution is subjected to an ore pulp diaphragm electrolytic leaching method, a sulfuric acid electrolytic leaching solution containing In2 (SO4) 3, Ga2 (SO4) 3 and H3PO4 is obtained in a cathode area, electrodeposited metal indium is obtained on a cathode, and anode mud sediment containing silicon dioxide and aluminum oxide is obtained on an anode area and an anode; extracting indium from the sulfuric acid electrolytic leaching solution, neutralizing the indium extraction raffinate, hydrolyzing and precipitating gallium, and continuously neutralizing and precipitating by using lime water or calcium oxide to obtain calcium phosphate or calcium superphosphate; the method has the advantages of being efficient, low in cost and free of pollution and comprehensively recovering indium, gallium and phosphorus from the waste containing silicon dioxide, aluminum oxide, grease, indium phosphide and gallium phosphide.

The present invention provides a flip-chip light-emitting diode, comprising a substrate, a light-emitting structure, a P-type electrode structure, and an N-type electrode structure. The light-emitting structure is disposed on the substrate and includes a gallium phosphide layer and a semiconductor epitaxy structure, with the gallium phosphide layer positioned between the substrate and the semiconductor epitaxy structure. The semiconductor epitaxy structure has, in sequence, a P-type current diffusing layer, a light-emitting layer, an N-type semiconductor layer, and a transparent ohmic contact layer. The P-type electrode structure is disposed on the gallium phosphide layer of the light-emitting structure, and the N-type electrode structure is disposed on the transparent ohmic contact layer. The N-type semiconductor layer has a distributed Bragg reflector, which is positioned between the light-emitting layer and the N-type electrode structure.

A solid-state imaging device according to an embodiment includes: a semiconductor substrate including a photoelectric conversion element; a lens disposed above a first light incident surface of the photoelectric conversion element; and a plurality of columnar structures disposed on a surface parallel to the first light incident surface that is located between a second light incident surface of the lens and the first light incident surface of the photoelectric conversion element. The columnar structure includes at least one of silicon, germanium, gallium phosphide, aluminum oxide, cerium oxide, hafnium oxide, indium oxide, tin oxide, niobium pentoxide, magnesium oxide, tantalum pentoxide, titanium pentoxide, titanium oxide, tungsten oxide, yttrium oxide, zinc oxide, zirconia, cerium fluoride, gadolinium fluoride, lanthanum fluoride, and neodymium fluoride.

The application discloses the technical fields of textile composite materials and relates to an electroluminescent magnetic fiber, which is a composite fiber and comprises a core layer, an electroluminescent layer and a conductive layer; wherein the core layer is silver nanowires AgNWs; the electroluminescent layer is a mixture of polyvinylidene fluoride PVDF, neodymium-iron-boron NdFeB, gallium phosphide GaP and an organic solvent; and the conductive layer is indium tin oxide ITO. The electroluminescent magnetic fiber effectively combines magnetoelectricity and electroluminescence, realizes the integration of an electroluminescent device, has good conductive and magnetic response performance, and can meet actual application.

This invention discloses a high-brightness, low-leakage, and highly reliable AlGaInP yellow-green LED epitaxial wafer. The epitaxial wafer comprises, in sequence, an N-type gallium arsenide (GaAs) buffer layer, an N-type gallium indium phosphide (GaInP) etch stop layer, an N-type GaAs ohmic contact layer, an N-type aluminum gallium indium phosphide (AlGaInP) current spreading layer, an N-type electron blocking layer, an N-type aluminum indium phosphide (AlInP) confinement layer, a multiple quantum well (MQW) layer, a P-type AlInP confinement layer, a P-type gallium phosphide (GaP) current spreading layer, and a P-type GaP ohmic contact layer grown sequentially on a GaAs substrate. By introducing an electron blocking layer, a graded quantum barrier thickness design, and a magnesium diffusion barrier layer, the invention effectively suppresses electron leakage and magnesium diffusion, reduces non-radiative recombination, and significantly improves the luminous efficiency and high-temperature operational stability of the LED.