Method for improving light extraction efficiency of light-emitting diode by means of nanoindentations

Abstract

The invention provides a method for improving the light extraction efficiency of a light-emitting diode by means of nanoindentations. According to the method for improving the light extraction efficiency of the light-emitting diode by means of the nanoindentations, a nanoscale patterned sapphire substrate is taken as a template, a large area of periodical nanoindentation structures are formed on a gallium phoshpide window layer of an epitaxial wafer of the light-emitting diode by exerting loads on the patterned sapphire substrate and the epitaxial wafer of the light-emitting diode, and thus the light extraction efficiency of the light-emitting diode is improved. According to the method for improving the light extraction efficiency of the light-emitting diode by means of the nanoindentations, the sizes, the shapes and the periods of the periodical nanoindentation structures formed on the gallium phoshpide window layer of the epitaxial wafer of the light-emitting diode can be effectively controlled by adjusting the shape and the period of the patterned sapphire substrate and the loads. Compared with an existing manufacturing technology, the method for improving the light extraction efficiency of the light-emitting diode by means of the nanoindentations has the advantages that operation is easy, cost is extremely low, and a large area of good nanoindentations can be formed on the surface of the epitaxial wafer of the light-emitting diode rapidly.

Description

technical field [0001] The invention relates to a method for improving the light extraction efficiency of a light-emitting diode by using nano-indentation, and belongs to the field of semiconductor optoelectronic material device preparation. Background technique [0002] In recent years, the market of light-emitting diodes (LEDs) has grown rapidly in the fields of high-power and indoor solid-state lighting, large-area display screens, and new energy-saving lighting in the automotive industry. A large number of scientific research institutions around the world have increased research on light-emitting diodes. Due to the current society's requirements for energy-saving and environmentally friendly light sources and commercial development, the development of light-emitting diode (LED) technology has made great progress, and it is considered to be the most important and promising solid-state light source in the next century. [0003] Light-emitting diodes use the recombination o...

AI Technical Summary

Problems solved by technology

The roughening of the surface of light-emitting diodes by etching has the following disadvantages: 1. The ions used in plasma etching have an impact on the doping ratio of semiconductor materials, resulting in changes in the quantum properties of semiconductors and affecting electrical properties; 2. Plasma Etching equipment is expensive and the cost of use is high, which greatly increases the manufacturing cost of light-emitting diodes. 3. Etching has no control over the roughened morphology and size of the semiconductor surface, and cannot be optimized

4. The processing time is long, which is not conducive to large-scale production

The disadvantages of the above two methods are: 1. The electron beam exposure equipment is expensive for several phases, and the single processing are...

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