Ultraviolet nanoimprint resist and components thereof

A nano-imprinting and resist technology, applied in optics, opto-mechanical equipment, instruments, etc., can solve the problem of increasing environmental pollution and the harshness of the glue-sweeping process, the inability to achieve high-fidelity graphics transfer, and unfavorable promotion and application of imprinting technology, etc. problems, to achieve the effect of ensuring true transfer, low shrinkage and high repeatability

Inactive Publication Date: 2010-05-12
SHANGHAI NANOTECH PROMOTION CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the embossed pattern on the substrate sometimes produces defects, which also need to be cleaned and recycled
Since the general imprint resist contains metal elements such as silicon and titanium, oxides and hydrates of the above elements will be produced during the oxidation cleaning process of concentrated sulfuric acid or concentrated sulfuric acid/hydrogen peroxide. Once these oxides and hydrates are formed It is difficult to completely remove, and the pollution on the template will become more serious with the increase of the number of imprints, eventually causing expensive templates and

Method used

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  • Ultraviolet nanoimprint resist and components thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] A resist for UV nanoimprinting was produced by combining the following ingredients.

[0039] Prepolymer: hyperbranched polyester acrylate (SARTOMER, CN2301), 10 parts

[0040] Aromatic monoacrylate (SARTOMER, CN131), 60 parts

[0041]Polyurethane acrylate (SARTOMER, CN963B80), 5 parts

[0042] Monomer: Isobornyl Methacrylate, 10 parts

[0043] Dipropylene glycol diacrylate, 10 parts

[0044] Photoinitiator: 1-Hydroxy-cyclohexyl-phenylmethanone, 2 parts

[0045] 2-Hydroxy-2-methyl-1-phenylpropanone, 2 parts

[0046] Additive: ethoxylated nonionic fluorosurfactant (Dupont, FSO-100), 1 part

Embodiment 2

[0048] A resist for UV nanoimprinting was produced by combining the following ingredients.

[0049] Prepolymer: epoxy acrylate (CYTEC, EBECRYL 9626), 10 parts

[0050] Aliphatic urethane triacrylate (CYTEC, EBECRYL 9260), 60

[0051] share

[0052] Monomer: 2-phenoxyethyl methacrylate, 15 parts

[0053] 1,3-Butanediol diacrylate, 10 parts

[0054] Photoinitiator: 2-phenylbenzyl-2-dimethylamine-1-(4-morpholinebenzylphenyl) butanone, 3 parts

[0055] Auxiliary agent: fluorine-containing nonionic surfactant (HENSIC, H-6910), 2 parts

Embodiment 3

[0057] A resist for UV nanoimprinting was produced by combining the following ingredients.

[0058] Prepolymer: aromatic epoxy acrylate (COGNIS, PHOTOMER 3016-25T F), 7 parts

[0059] Epoxy acrylate (COGNIS, PHOTOMER 3016-40RF), 55 parts

[0060] Monomer: Ethoxylated nonylphenol acrylate, 14 parts

[0061] 1,6-Hexanediol diacrylate, 14 parts

[0062] Photoinitiator: 2-methyl-1-[4-(methylthio)phenyl]-2-(4-morpholinyl)-1-propanone, 6 parts

[0063] Auxiliary: fluorocarbon modified polyacrylate (CIBA, EFKA3277), 4 parts

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Abstract

The invention relates to an ultraviolet nanoimprint resist and components thereof, and belongs to the technical field of nanoimprint resists. The resist consists of (methyl) acrylic ester prepolymer cured by free radicals, a monomer, a photoinitiator and an assistant. The resist is suitable for the ultraviolet nanoimprint technology, and particularly suitable for the ultraviolet nanoimprint technology of spin coating. The resist is characterized in that: curing layers of the resist on substrates such as a silicon sheet, a quartz sheet, a sapphire sheet, a gallium nitride sheet, a gallium nitride indium sheet, a gallium nitride aluminum sheet, a gallium phosphide indium sheet and the like, and residual curing layers of the resist on a silicon template and a quartz template can be quickly and conveniently removed with any one of concentrated sulfuric acid, sulfuric acid/ hydrogen peroxide. The residual curing layers of the resist on the silicon sheet and the quartz sheet can be conveniently cleaned by oxygen plasma. The resist also has the advantages of high coating planeness, no defect of coating layers, high curing speed, low shrinkage rate, high resolution, high etching selection ratio and the like.

Description

technical field [0001] The invention relates to a nano-imprint resist, in particular to an ultraviolet nano-imprint resist and its composition. Background technique [0002] Nanoimprint technology is a revolutionary, low-cost technique for fabricating nanostructure patterns with a limit resolution of a few nanometers. Compared with other photolithography technologies, nanoimprint technology has obvious advantages such as high resolution, high efficiency, and low cost. The most attractive feature of this technology is that it is like a stamp. It can be pressed continuously with a template, and the output is high. It is very suitable for Large-scale production is expected to break through the world's technical problems in the production of ICs with a line width of tens of nanometers as soon as possible, and can greatly shorten the graphics production cycle and reduce costs. This technology has also shown strong application capabilities in the fields of light-emitting diodes, ...

Claims

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Application Information

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IPC IPC(8): G03F7/028G03F7/00
Inventor 张剑平张静刘彦伯周伟民施利毅赵彬
Owner SHANGHAI NANOTECH PROMOTION CENT
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