208 results about "Gallium arsenate" patented technology

Disclosed herein are a Raman spectroscopy structure comprising a porous material substrate, and a method of performing Raman spectroscopy of a sample disposed adjacent to the structure comprising the porous material substrate. Generally, the substrate includes one or more layers of a porous material such as porous silicon, porous polysilicon, porous ceramics, porous silica, porous alumina, porous silicon-germanium, porous germanium, porous gallium arsenide, porous gallium phosphide, porous zinc oxide, and porous silicon carbide. It has been discovered that such a substrate material, when excited with near-infrared light, does not exhibit undesired background fluorescence characteristic of other known Raman spectroscopy substrates.

Embodiments of the invention generally relate to optoelectronic semiconductor devices such as photovoltaic devices including solar cells. In one aspect, an optoelectronic semiconductor device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device, the emitter layer made of a different material than the absorber layer and having a higher bandgap than the absorber layer. A heterojunction formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. The p-n junction causes a voltage to be generated in the device in response to the device being exposed to light at a front side of the device.

The invention provides an LED gallium arsenide substrate dewaxing cleaning agent which comprises the following components in percentage by weight: 5 percent to 10 percent of organic solvent, 2 percent to 5 percent of organic alkali, 5 percent to 10 percent of surfactant, 5 percent to 20 percent of inorganic salt and the balance of de-ionized water. The organic solvent is alkane, naphthenic hydrocarbon or aromatics solvent; the organic alkali is polyhydric polyamine, pegamine, hydroxylamine or hydramine, the surfactant is one or more than one of fatty alcohol polyoxyethylene ether, polyol ester and macromolecule and element organic compounds, and inorganic salt is basic salt. In the invention, the LED gallium arsenide substrate dewaxing cleaning agent can replace halogenated hydrocarbon solvent, not only can achieve the cleaning effect of halogenated hydrocarbon solvent with obvious dewaxing effect, and but also has no influence on gallium arsenide substrate and simple preparation process, and can meet the requirement of environment protection.

The invention relates to a method for doping carbon in the gallium arsenide by using a silica tube for growing semi-insulated gallium arsenide. The method comprises the following steps: step 1: polycrystally synthesizing 7N Ga and 7N As to form a GaAs polycrystal; step 2: putting the synthesized GaAs polycrystal, seed crystal and B2O3 in a PBN crucible; step 3: putting the PBN crucible in a quartz body of the silica tube; step 4: fixing pure graphite in a silica groove on a silica cap of the silica tube; step 5: covering the quartz body and the silica cap, vacuumizing and welding the quartz body and the silica cap of the silica tube on oxyhydrogen flame; step 6: putting the welded silica tube in a VGF single crystal furnace for atmosphere doping and single crystal growth; and step 7: soaking the PBN crucible in methanol after the single crystal growth to obtain a GaAs single crystal and finish the preparation of the GaAs single crystal.

The invention is a defect detecting method for a large-size GaAs monocrystalline structure, comprising: grinding and polishing, i.e. mechanically or chemically polishing, where the formula of the adopted polishing solution is that the ratio of sulphuric acid to oxydol to water is 3 : 1 : 1; dislocation corroding, i.e. placing potassium hydroxide in a silver pot and heating to melt potassium hydroxide into a clear state and immediately placing the clear-state potassium hydroxide in a wafer sample for corroding, then taking out the sample and cooling, and then washing with water and blow-dry; selecting measuring direction, measuring point position and number of measuring points, observing visual field area, where the first measuring point is D/10mm apart from the wafer edge and the others are selected at 10 mm intervals, each of which is a measuring visual field; calculating for the selected measuring points. The invention enlarges the range of dislocation density detection, convenient and simple to operate and saving time.

A process for preparing cerium oxide nanoparticles includes such steps as proportionally dissolving cerium nitrate and hexamethylenetetraamine (HMT) respectively in alcohol and distilled water, mixing, stirring, sealing, heating at 70-90 deg.C for 1-2 hr, cooling, ageing for 1-2 hr, filter, washing deposit, and drying at 60-80 deg.C for 6-10 hr. The obtained CeO2 nanoparticles can be used to prepare the polishing liquid for polishing the semiconductor wafer of gallium arsenide.

The invention relates to direct bonding method of InP and GaAs including thee technical processes of surface cleaning, laminating and high-temp annealing. The characteristic is that surface of InP and GaAs is processed two times by deoxidizing before bonding, then it is direct soaked in reducibility nitrogen solution without drying by high-purity nitrogen, after being soaked, it is direct put into anti-oxide alcohol solution. Laminate is processed in the alcohol solution, burnishing surface of InP is downward to be put on burnishing surface of GaAs straight, InP and GaAs are coincided together that side and side are aligned, bonding temp. is from 500 to 700 deg.C, annealed after being bonded, keeping time is from 30 to 40 minutes, both bonding and annealing are proceeded by nitrogen protection. Optical and electrical performance of whole material structure can not be reduced since the bonded IP and GaAs interface.

The invention relates to a process that inside diameter slicing machine is used to cut level gallium arsenide single-crystal wafer, which comprises following procedures. (1) edge cutting treatment is carried out for level gallium arsenide single-crystal ingot with the length of 50-500mm. (2) the single-crystal ingot is bonded with the surface of graphite strip and the surface of graphite support. (3) bonded single-crystal ingot is fixed on the ingot-pushing device of inside diameter slicing machine. (4) cutting blade is installed; switch is on and the machine runs. (5) working table is lift and a piece of wafer is cut to confirm crystal orientation; after confirmation calibrating thickness of single-wafer cutting is set; said cutting orientations are parts of (100) to the nearest [100] and [011]; the angle between the crystal orientation and the growth orientation of gallium arsenide single crystal is 54degree 44'. (6) cutting speed is set to cut wafers in multiple piece automatically and continuously. (7) after the whole single-crystal ingot is cut cutting blade is washed and machine is off. Level gallium arsenide single-crystal wafer with the diameter of Phi50. 8mm-Phi76mm and the thickness of 280um-470um can be cut in the process and average production yield can be more than 95%. Production stability and repeatability are good and mass production can be realized.

The invention discloses a gallium arsenide monocrystal growing method. The gallium arsenide monocrystal growing method comprises the following steps: putting a gallium arsenide polycrystal raw material into PNB (phosphorus nitrogen boron) crucibles in which seed crystals are put in advance; putting the PNB crucibles on a descending table in a growing furnace, wherein 1-5 PNB crucibles are put on the descending table; adjusting the furnace temperature of the growing furnace to 1200-1300 DEG C so as to rotate the descending table while descending the descending table after the tops of the seed crystals are melted; after crystal growing, moving the PNB crucibles to a constant-temperature area in the growing furnace to perform in-situ annealing on GaAs (gallium arsenide) crystals, wherein in the annealing process, the temperature in the growing furnace is controlled at 950-1100 DEG C, and the annealing time is 8-12 h; and cooling the GaAs crystals to room temperature at a speed rate of 20-70 DEG C per hour, thus obtaining GaAs monocrystals. By the gallium arsenide monocrystal growing method, the grown crystals are small in thermal stress, good in uniformity and relatively low in dislocation density.

The invention relates to a preparation method for an oxygen doped gallium arsenide polycrystal film which can give out red lights. In the method, gallium arsenide, gallium oxide and indium oxide are used as materials; a gallium arsenide substrate is used as the growing carrier of the film; hydrochloric acid, absolute ethyl alcohol, oxyful and de-ionized water are used as the washing agents; argon is used as a supporting gas and a protective gas; sodium hypochlorite, sodium hydroxide, phosphoric acid and de-ionized water are used as waste gas recycling agents; the preparation is carried out in a tubular high temperature furnace; an L-shaped quartz boat is arranged in a high temperature section in a quartz tube; the powder of the materials is arranged at the left part of the L-shaped quartz boat; the gallium arsenide substrate is obliquely arranged at the right part; under the temperature of 800 minus or plus 5 DEG C and the atmosphere of argon, state conversion, vapor deposition and film growing are carried out on the powder of the materials to grow into the black oxygen doped gallium arsenide polycrystal film which is in a wave shape formed by connecting gluing particles and gives out red lights; poisonous gases are recycled in the preparation, thus not polluting the environment; the preparation method has the advantages of short technique flow, fast film shaping and high product purity which can achieve 99 percent.

The method discloses a molecular beam epitaxial method for growing a non-antiphase domain gallium arsenide film on a germanium substrate. The method comprises the followings steps of : step one, selecting the Ge substrate of which the (100) plane deviates 6 to 9 degrees from the <111> direction; step two, performing the degassing deoxidation and the annealing treatment of the Ge substrate; and step three, exposing the Ge substrate undergoing the annealing treatment under an environment of As vapor for a period of time, and growing the non-antiphase domain GaAs film on the Ge substrate at a temperature of between 300 and 650 DEG C. Tests show that the surface roughness of the GaAs film grown by the method is only 0.718nm, namely the generation of the antiphase domain is successfully inhibited, and the crystal mass of the film is better than the best result in the present world.

The invention discloses a method for preparing a silicon-based high-mobility CMOS provided with an III-V/Ge channel. The method comprises steps as follows: a germanium layer is grown on a silicon substrate; a low-temperature nucleation gallium arsenide layer, a high-temperature gallium arsenide layer, an on-growth semi-insulating InGaP (gallium indium phosphide) layer and a gallium arsenide cover coating are sequentially grown on the germanium layer after the first annealing, so that a sample is formed; the gallium arsenide cover coating of the sample is subjected to a gallium arsenide polishing process, and a nMOSFET (metal oxide semiconductor field effect transistor) structure is grown after the sample is subjected to secondary annealing; an area is selected on the surface of the nMOSFET structure for ICP (inductively coupled plasma) etching, downward etching from the nMOSFET structure to the germanium layer is performed to form a groove, and silicon dioxide layers are grown in the groove and on the surface of the nMOSFET structure in a PECVD (plasma enhanced chemical vapor deposition) manner; the area selected for etching is subjected to ICP etching again from the silicon dioxide layers to the germanium layer, and a groove is formed; the sample is cleaned, and a germanium nucleating layer and a germanium top layer are grown in the groove with an ultra-high vacuum chemical vapor deposition method; the germanium top layer is polished, and a part of silicon dioxide layers on the nMOSFET structure are removed; and the CMOS process of source, drain and grid electrodes is performed on the nMOSFET structure and the germanium top layer, so that the preparation of the device is finished.

The invention provides a five-port capacitance type microwave power sensor based on a micro mechanical clamped beam, which not only has the advantages of the traditional thermoelectric type power sensor of low loss, high sensitivity and good linearity, but also realizes the measurement of the microwave power of five ports. Meanwhile, some ports into which the microwave power is input can be detected and the proportion of a watt level of the microwave power can be detected; and the five-port capacitance type microwave power sensor has the advantages of high integrated level and compatibility with a gallium arsenide monolithic microwave integrated circuit. In the structure, five CPW (Coplanar Waveguide) input ends for transmitting microwave signals are arranged on a gallium arsenide substrate, the input ends are symmetrically placed and form a 72-degree angle between every two input ends; each CPW output end is connected with two terminal matched resistors and a thermoelectric couple isarranged near each terminal resistor; the five pairs of thermoelectric couples are symmetrically placed and are connected in series to form a thermoelectric pile and the angle between every two of the five pairs of thermoelectric couples is also 72 degrees; an MEMS (Micro Electro Mechanical System) clamped beam is stretched across each CPW and two anchor areas of the clamped beam are located outside a CPW earth wire; and a sensing electrode is placed between a CPW signal wire and the CPW earth wire.

The invention relates to a treatment method for removing arsenic and COD in wastewater in gallium arsenide wafer production treatment simultaneously and belongs to the technical field of wastewater treatment. The method includes delivering waste water to an adjusting reaction tank, removing dichlord isocyanurice acid in raw water through the oxidation-reduction reaction and lifting wastewater subjected to the treatment to a coagulating precipitation tank through a pump to conduct sequential batch type coagulating sedimentation reaction. The process flow sequentially includes water feeding, chemical feeding, coagulating, precipitating and water discharging. Treated wastewater is lifted to a sequential batch type activated sludge tank from a middle tank through the pump to be subjected to aerobic biological treatment. The process flow sequentially comprises water feeding, aeration, sedimentation and water discharging. The arsenic and COD density in finally discharged water can achieve the standard of one-grade B in<<pollutant discharge standard of town wastewater treatment factory>>(GB18918-2002). The treatment method can simultaneously remove pollutants including arsenic, dichlord isocyanurice acid, COD and the like in the wastewater in gallium arsenide wafer production treatment, is high in treatment efficiency and high in operation stability.

The invention provides a germanium-silicon-based gallium arsenide material and a preparation method thereof, and application of a germanium-silicon-based gallium arsenide material. The germanium-silicon-based gallium arsenide material comprises a silicon substrate having a surface with a periodic groove structure, a germanium middle layer attached to the surface of the silicon substrate, and a gallium arsenide layer attached to the surface of the germanium middle layer. The stress is eliminated generated by lattice mismatch of silicon and gallium arsenide by utilizing the inhibiting effect ofthe germanium (113) crystal face on the gallium arsenide antiphase domain and the characteristic of lattice matching of germanium and gallium arsenide, thereby achieving the epitaxial growth of high-quality single-crystal and ultrathin gallium arsenide on the silicon (100) substrate on an III-V family molecular beam epitaxial device.

A method for controlling quality consistency of a gallium arsenide product comprises the following steps of 1, arranging historical process data for forming an original model sample database; 2, performing mathematical modeling on the process data in a production process by means of an artificial neural network; and 3, performing product quality forecasting, namely performing final product qualityforecasting by means of a mathematical model through the process data of the step, and after product finishing, comparing actual data of the product with forecast result data, thereby generating a product quality model report.

The invention discloses a method for transferring a gallium arsenide epitaxial layer to a flexible metal substrate. A metal foil is used as a transfer support substrate, so that the weight of a device is effectively reduced, the gravimetric specific power is increased, and a flexible function is achieved. A metal bonding method is used, a stable and high-conductivity connection mode is provided, and a bonding metal layer is prepared in a vacuum evaporation mode, so that the thickness control is easy to realize and the uniformity is good. A graphite flake is adopted as a buffer gasket, so that the bonding quality can be effectively improved, cavities are reduced, and the finished product rate is increased. According to the method, the gallium arsenide epitaxial layer is transferred to the flexible metal substrate with a metal bonding process. The method has the technical characteristics of portability and flexibility. The application range of III-V family epitaxial products can be expanded.

The invention relates to a preparation method of a silicon-aluminum alloy, which comprises steps as follows: a casting or powder metallurgy process is utilized to prepare a silicon-aluminum material of which the mass percent of silicon is 25-90% and the silicon phase dimension is 0.1-20 mm; the prepared silicon-aluminum material can be further welded onto an aluminum sheet, copper sheet, silicon sheet, silicon carbide sheet, germanium sheet, gallium arsenide sheet, gallium nitride sheet or aluminum nitride sheet; and the independent silicon-aluminum block material or silicon-aluminum layer welded on the aluminum sheet, copper sheet, silicon sheet, silicon carbide sheet, germanium sheet, gallium arsenide sheet, gallium nitride sheet or aluminum nitride sheet is subjected to stirring friction to obtain the compact silicon-aluminum composite material of which the mass percent of silicon is 25-90% and the silicon phase dimension is 0.5-50 mu m. The silicon-aluminum material can independently form a block or be compounded on the surface of the aluminum sheet, copper sheet, silicon sheet, silicon carbide sheet, germanium sheet, gallium arsenide sheet, gallium nitride sheet or aluminum nitride sheet.

The invention provides a gallium arsenide polycrystal synthesis method. The gallium arsenide polycrystal synthesis method comprises the following steps: providing a reaction container with an upper cavity and a lower cavity, which are communicated; filling arsenic into the lower cavity, mounting a bearing container into the upper cavity and filling gallium into the bearing container; then sealingand vacuumizing the reaction container; then carrying out temperature rising treatment on the reaction container so as to carry out synthesis reaction on the arsenic and the gallium; finally, carryingout cooling treatment on the reaction container, and taking out a synthesized gallium arsenide polycrystal. According to the gallium arsenide polycrystal synthesis method, polycrystal synthesis is carried out by adopting a vertical Bridgman method and the production capacity is high; a polycrystal material is molded in the bearing container, so that a single crystal can be completely matched withthe bearing container when being charged, so that the feeding amount of each heat is reduced and the single crystal production cost is reduced; the reaction container is vertically arranged and is provided with the upper cavity and the lower cavity; temperature gradient distribution of a heat field of the reaction container is uniform and the synthesized polycrystal material is dense and has no holes and no rich gallium; the synthesis ratio is greatly improved when being compared with the previous synthesis ratio.

The invention discloses a method and a device for manufacturing gallium arsenide polycrystals. The method comprises the following steps: reacting an arsenic-loaded nitride boat with a gallium-loaded boron nitride boat in a sealed quartz tube through a horizontal gradient solidification process to form the gallium arsenide polycrystals; and cutting off a quartz cap at the tube mouth of the quartz tube, and taking out the gallium arsenide polycrystals, wherein the cutting process is carried out by the following steps: fixing the quartz tube on a cutting table; arranging a running saw blade at aposition coplanar with the cross section, right below the quartz cap, of the quartz tube; and moving the saw blade to the quartz tube in the plane of the cross section until the quartz tube is cut out. The manufacturing method can effectively avoid the problem of breakage of two ends of every boron nitrides boat, caused by the frequent collision of the boron nitride boats with the gallium arsenidepolycrystals, so the service life of the boron nitride boats is effectively improved, and the tube mouth breakage rate of the quartz tube is effectively reduced.

The invention relates to a zone melting method, namely a crystal growth method. The zone melting method is one crystal growth method and is also known as a floating zone melting (FZ) method. The zone smelting method is used for obtaining single crystals of semiconductors such as silicon-germanium and gallium arsenide. Compared with other crystal growth methods, the zone melting method has the disadvantages that only columnar raw material polycrystalline silicon produced by a siemens reduction furnace through a special technology can be used, and only limited factories provide extremely few zone-melting polycrystalline silicon materials around the world, so that the zone melting method cannot be popularized like other crystal growth methods. But compared with other crystal growth methods, the zone melting method has the advantages that silicon single crystals with extremely low pollution can be supplied, and the advantage in the crystalline quality is beyond comparison. The method provided by the invention has the advantages that the zone continuous casting process is used, and common siemens reduction silicon materials are used for preparing the zone-smelting silicon materials, so that the sources of the zone-smelting silicon materials are widened, the manufacturing cost is reduced, and the zone-melting crystals with high quality are popularized and applied in industries.

The invention provides a polycrystalline gallium arsenide synthetic method without liquid encapsulation. The method comprises the steps as follows: step one, a boron nitride crucible loaded with arsenic and gallium is placed in a graphite crucible, and then the graphite crucible is covered with a graphite crucible cover and a thermal-insulation graphite cover sequentially; step two, a synthesis furnace is turned off, vacuum pumping is performed until the pressure in the synthesis furnace is below 5-20 MPa, and a vacuum valve is turned off; step three, the furnace is slowly filled with inert gases or nitrogen, the furnace is opened for circulating water cooling until the pressure in the synthesis furnace is 1.5-4.5 MPa, and then the furnace is heated in five stages to reach a raw material melting temperature; step four, crystallization is performed; step five, when the temperature of the synthesis furnace is 600-800 DEG C after cooling in three stages, a heater is turned off, and meanwhile, the rotation of the graphite crucible is stopped to enable the synthesis furnace to cool naturally.