64 results about "Gallium arsenate" patented technology

The invention belongs to the field of semiconductor devices, and particularly discloses a gallium arsenide-based heterojunction bipolar transistor and a preparation method thereof. The GaAs-based HBT device disclosed by the invention adopts an inverted structure, and the semiconductor substrate in the processing technology is used as a conductive N-type semiconductor layer to participate in the conduction of the device; according to the technical scheme of the invention, the parasitic capacitance between the P-type GaAs base and the N-type InGaP layer of the GaAs-based HBT device is small, the contact resistance between the topmost layer in the collector region and the electrode of the collector region can be effectively reduced, the physical isolation between the adjacent GaAs-based HBT devices can be realized by etching the mesa so as to improve the isolation effect, the heat dissipation effect of the emitter region is good, and the service life of the emitter region is prolonged. And a traditional substrate through hole process is not needed, so that the process cost is saved.

The invention discloses a method for composite etching of an electroplating gold plating layer, which comprises the following steps of: manufacturing a photoetching pattern on the front surface of gallium arsenide epitaxy, then evaporating a metal contact layer, depositing a SiNx protective mask layer, performing Mesa mesa etching on the gallium arsenide epitaxy, exposing a high-aluminum layer on the side surface of an epitaxial material, and forming an aluminum oxide limiting layer by adopting a wet oxidation process; a second SiNx protective mask layer continues to be deposited, and the metal contact layer is exposed through dry etching; forming a seed gold layer by adopting magnetron sputtering TiW / Au metal, and forming a photoresist mask with a target electrode pattern on the seed gold layer; electroplating thick gold on the photoresist mask pattern; the photoresist mask layer is removed after completion; the method of combining dry etching and wet etching is adopted to remove the gold plating layer in the non-electroplating area, so that the lateral corrosion of the metal layer is obviously reduced, the high-precision and high-fidelity electrode pattern transfer is realized, the lateral corrosion of the metal layer is reduced, and the passivation protection effect of the device is improved.

This invention discloses a near-space epitaxial method for significantly improving the uniformity of cadmium zinc telluride (CdZnTe) epitaxial films based on air-firing substrate treatment. The method involves air-firing a cleaned and dried gallium arsenide (GaAs) substrate at a predetermined temperature under argon atmosphere. The growth surface is calibrated before air-firing, and the GaAs substrate after air-firing exhibits a matte finish under optimal parameters. A CdZnTe polycrystalline block is used as the growth source. The polycrystalline block is trimmed to fit into the mask apertures and then subjected to grinding, ultrasonic cleaning, and air-firing to remove surface impurities and mechanical damage layers. During the film growth stage, appropriate growth parameters are set in a near-space sublimation furnace to allow CdZnTe to epitaxially grow on the GaAs substrate.

The present invention belongs to the field of research on the application of nanomaterial heterostructures. In response to the problems that traditional gallium arsenide-aluminum gallium arsenide requires harsh quantum Hall resistance platform measurement conditions such as temperatures below liquid helium and magnetic fields above 10T, a method for defining a standard resistance for a CrOCl-supported graphene quantum Hall platform is disclosed. The CrOCl-supported graphene system, by means of the interface coupling of the CrOCl antiferromagnetic insulator to the graphene, can achieve electron transport regulation of the graphene. Compared with the harsh quantum Hall resistance platform measurement conditions of traditional gallium arsenide-aluminum gallium arsenide, gate voltage regulation can be used to achieve a larger parameter space, i.e., a magnetic field requirement as low as 0.2T and a temperature as high as above liquid nitrogen temperature (77K), achieving a stable quantized transverse conductance platform. This greatly reduces the threshold for quantum resistance standards, making it more convenient to use quantum resistance standards to replace the original physical resistance standards, becoming a new generation of resistance benchmarks, and is expected to be widely used in quantum metrology.

The application discloses a microwave chip testing tool, relates to the technical field of microwave chip testing, and aims to solve the technical problem of insufficient function of clamping equipment in the microwave chip testing tool, and comprises a testing machine table; a conveying assembly is arranged on the testing machine table; a basic transfer assembly is arranged on the testing machine table and is located opposite an output end of the conveying assembly; a plurality of auxiliary tables for energizing operation of microwave chips are arranged below the basic transfer assembly; and a clamping assembly for stable and limited positioning of the microwave chip testing operation is arranged on the side of the auxiliary table. Based on the adjustment and setting of the clamping assembly, the clamping assembly has two different clamping modes, i.e., a flexible clamping state and an elastic retaining state, the two different clamping modes are used to simulate the different thermal expansion coefficients of gallium arsenide and gallium nitride microwave chips in the energizing test, and the functionality of the operation is effectively improved.

Method for producing a surface-treated gallium arsenide substrate, comprising the following steps: a) Providing a gallium arsenide substrate; b) Oxidation treatment of at least one surface of the gallium arsenide substrate in the dry state using UV radiation and / or ozone gas; c) Contacting at least one surface of the gallium arsenide substrate with at least one liquid medium; comprising the following sub-steps: ci) Contacting at least one surface of the gallium arsenide substrate with alkaline aqueous solution, c-ii) subsequent contact of at least one surface of the gallium arsenide substrate with water, c-iii) subsequent contact of at least one surface of the gallium arsenide substrate with acidic aqueous solution, c-iv) subsequent further contact of at least one surface of the gallium arsenide substrate with water. d) Marangoni drying of the gallium arsenide substrate.

The present invention discloses a wafer-level gallium arsenide chip heat dissipation packaging structure and packaging method. In this packaging structure, the main chip and the gallium arsenide chip are interconnected in a planar manner through a redistribution layer. The back of the gallium arsenide chip is coated with high thermal conductivity / high thermal conductivity heat dissipation glue / or affixed with a high thermal conductivity DAF film and adhered to the high thermal conductivity wafer above to form a high-density interconnected reconstruction chip. The reconstruction chip is interconnected with the substrate through metal bumps. A heat dissipation cover is provided on the top of the substrate and the reconstruction chip, or a heat dissipation ring is attached to the substrate and a heat dissipation fin is provided on the top of the reconstruction chip, so that the heat dissipation cover or heat dissipation fin is directly bonded and contacted with the high thermal conductivity wafer. The gallium arsenide chip conducts internal heat away through the high thermal conductivity wafer, the heat dissipation cover or the heat dissipation fin. Compared with the traditional gallium arsenide chip embedded packaging structure, the present application reduces the amount of plastic packaging material and the thickness of the plastic packaging is thinner, which can reduce warping. In terms of the packaging method, it can reduce the processing difficulty and significantly improve the thermal conductivity effect.

The application discloses a high-polishing-rate gallium arsenide CMP etching solution and application thereof, which comprises functional composite abrasive, oxidizing agent, pH regulator, complexing agent and aqueous medium; the functional composite abrasive is metal-doped mesoporous silicon oxide nanoparticles; the same polishing system is used for the first time to simultaneously consider extremely high material removal rate and extremely low surface roughness, and a long-term technical contradiction in the field is solved.

The invention relates to the field of material processing waste liquid treatment, in particular to a gallium arsenide rough polishing liquid preparation waste liquid recovery device which comprises a first box body, a dispersing mechanism for dispersing waste liquid is arranged on the inner side wall of the first box body, first notches are formed in the two side walls of the first box body, and filter plates are slidably connected to the inner side walls of the first notches; according to the waste liquid recovery device for gallium arsenide rough polishing liquid preparation, the cleaning mechanism integrates the composite cleaning function of high-pressure washing and pore channel rotary wiping, full-automatic cleaning is achieved, a cooperative mode of one-use and one-standby is adopted, and the waste liquid recovery device for gallium arsenide rough polishing liquid preparation has the advantages that the waste liquid recovery device is simple in structure, convenient to operate and high in practicability. When the filter plate on the left side is in a working state, the cleaning box on the right side can complete cleaning and standby of the other filter plate, and the waste liquid treatment requirement of large-scale semiconductor production is met.

The invention discloses a high-efficiency reverse mismatched two-junction GaInP / GaInAs battery, the outer edge structure of the reverse mismatched two-junction GaInP / GaInAs battery comprises a gallium arsenide substrate, and a GaAs buffer layer, a GaInP barrier layer, a GaAs cap layer, an AlGaInP top battery, a first tunneling junction, a GaInAs bottom battery and an AlGaInAs cap layer which are arranged on the gallium arsenide substrate in sequence, and the AlGaInP top battery comprises multiple layers of MQW-MM quantum well gradient layers. According to the epitaxial material growth, the absorption spectrum range of the AlGaInP top cell material is expanded through the quantum well gradient layer (MQW-MM), and the short-circuit current density of the top cell is improved, so that the AlGaInP top cell is better matched with a GaInAs bottom cell with excessive current. The MQW-MM quantum well gradient layer serves as a bottom cell lattice constant gradient layer to achieve growth of a target lattice material, red shift is conducted on the absorption cut-off wavelength of a GaAs bottom cell material matched with a top cell GaInP lattice, the overall spectral absorption range is widened, and the GaInAs bottom cell material high in quality and low in defect grows.

The present application provides a glass product with blackened layer, which contains, in terms of weight percentage, SiO2: 51-68%; B2O3: 6-19%; BaO: 6-19%; ZnO: 1-10%; K2O: 0.5-10%; Na2O: more than 0 but less than or equal to 8%; Sb2O3: more than 0 but less than or equal to 2%, wherein SiO2 / BaO is 3.0-11.0. Through reasonable component design, the glass product with blackened layer of the present application has a suitable coefficient of thermal expansion. In some embodiments, the coefficient of thermal expansion of the glass product with blackened layer obtained by the present application can be matched with gallium arsenide material.

The present invention discloses an on-chip semiconductor transformer model, modeling method, device and storage medium, wherein the model includes four parts: the first part is a series branch that characterizes the inductance and resistance characteristics of the primary and secondary coils of the transformer; the second part is the mutual inductance that characterizes the magnetic field coupling effect between the primary and secondary coils of the transformer and within the primary and secondary coils; the third part is the parasitic capacitance that characterizes the capacitive coupling effect between the primary and secondary coils of the transformer; and the fourth part is a substrate loss network that characterizes the substrate loss effect of the transformer. The present invention replaces the traditional CRC substrate loss network with a trapezoidal substrate loss network, and establishes an on-chip transformer model based on this. The trapezoidal substrate loss network used can better fit the loss characteristics of the gallium arsenide substrate, so that the on-chip semiconductor transformer model meets multiple processes. The present invention can be widely used in the field of passive device modeling in millimeter wave integrated circuits.

The utility model discloses flexible gallium arsenide battery assembly electric resistance welding series equipment, which belongs to the technical field of welding equipment, and comprises a machine table, a supporting platform, a platform slide rail and a gantry slide rail are fixedly connected to the top end of the machine table, a welding platform is arranged on the platform slide rail and corresponds to the supporting platform, a slide seat is arranged on the gantry slide rail, and the gantry slide rail is connected with the platform slide rail. The two symmetrical side ends of the sliding base are fixedly connected with a visual assembly and a lifting sliding rail respectively. The welding platform adsorbs and fixes the gallium arsenide battery, the welding platform has high planeness and can be compatible with series welding of 72 batteries at the same time, the gantry sliding rail enables the visual assembly and the welding assembly to correspond to the gallium arsenide battery by moving the sliding base, the visual assembly recognizes welding spots on the gallium arsenide battery, and the welding assembly recognizes the welding spots on the gallium arsenide battery. The lifting sliding rail controls the welding assembly to move downwards to correspond to the recognized welding spot, the resistance welding power source supplies power to the welding assembly to complete welding of the needed welding spot, and the welded gallium arsenide battery can meet the welding requirement of more than 90% of aerospace equipment.

The invention belongs to the technical field of semiconductor manufacturing, and particularly discloses gallium arsenide single crystal mechanical polishing equipment which comprises a polishing table and a single crystal, the polishing table is connected with a grinding disc through a rotating mechanism arranged on the lower portion of the inner side of the polishing table, the grinding disc is sleeved with a liquid collecting mechanism, and the upper surface of the polishing table is fixedly connected with a frame base; a telescopic cylinder is arranged outside the frame base, an upper connecting rod is connected to the telescopic end of the telescopic cylinder, a rectangular shell is connected to the upper connecting rod through an externally-arranged pneumatic guide piece, the rectangular shell is slidably installed below the outer portion of the guide pipe, and guide sliding mechanisms are arranged on the four peripheral faces of the rectangular shell correspondingly; according to the single crystal wafer polishing device, stable clamping of single crystal wafers of different sizes is achieved, polishing liquid is evenly supplied, the utilization rate is high, polishing defects are effectively avoided, the polishing device is environmentally friendly and free of pollution, the polishing precision and operation safety are remarkably improved, and the high-precision machining requirement of the semiconductor manufacturing field is met.

The invention relates to the technical field of semiconductor material precision machining, in particular to a chemical mechanical polishing solution as well as a preparation method and application thereof. The chemical mechanical polishing solution comprises the following components in percentage by mass: 6-12% of a composite abrasive, 3-7% of a composite oxidant, 2-5% of a complexing agent, 0.5-2% of a phosphine antidote, 0.3-1.5% of a dispersion stabilizer, 0.1-1% of a pH regulator and the balance of water. The composite abrasive is a composite material of aluminum oxide and silicon dioxide; the composite oxidant comprises a sodium hypochlorite solution and a hydrogen peroxide solution. Through reasonable proportioning and synergistic effect of the composite abrasive, the composite oxidant, the complexing agent, the phosphine antidote, the dispersion stabilizer and the pH regulator, the polishing solution is not only suitable for a single substrate, but also compatible with chemical mechanical polishing of three typical third-generation semiconductor materials of indium phosphide, gallium arsenide and germanium, has good universality and process adaptability, and is suitable for industrial production. And the production cost and the process switching complexity can be reduced.

The utility model discloses a gripper capable of quickly replacing and grabbing a clamping plug, and relates to the field of gallium arsenide cleaning, the gripper comprises a finger cylinder, a slide rail, a movable support and a replaceable positioning frame, the finger cylinder is arranged at the tail end of a mechanical arm, the slide rail is arranged at the bottom of the finger cylinder, the slide rail is provided with a long through hole for a clamping jaw of the finger cylinder to move, and the movable support is arranged in the long through hole. The movable support is installed in the sliding rail in a sliding mode, the movable support is fixedly connected with a clamping jaw of the finger air cylinder, a U-shaped inserting groove is formed in the outer side of the movable support, and the replaceable support is inserted into the U-shaped inserting groove. The clamping plug grabbing device can be suitable for grabbing clamping plugs of different sizes, and the grabbing hand does not need to be repositioned.

The invention relates to an artificial surface plasmon on-chip differential dual-mode transmission line based on Balun. The on-chip differential dual-mode transmission line comprises a differential dual-mode transmission line located in the middle, symmetrical Balun structures located at the two ends of the differential dual-mode transmission line and bonding pad structures located on the outer sides of the Balun structures. The differential dual-mode transmission line has three different structures which are respectively four metal strip lines which are parallel to each other and branch knots which are arranged among the metal strip lines. The four metal strip lines are parallel to one another; the cross-layer branch knots are positioned below the metal strip lines; the two pairs of parallel metal strip lines are distributed on different metal layers; and the branches are arranged between the metal lines on the same layer. Transmission of two pairs of differential artificial surface plasmon signals can be supported at the same time, and the differential artificial surface plasmon antenna is suitable for technologies of gallium arsenide, silicon nitride and other III-V chips, other chips, circuit boards and the like, and supports design of a terahertz wave band, a microwave band and a millimeter wave band.

The invention discloses a semi-insulating gallium arsenide photoconductive switch with a nested porous multilayer structure. The semi-insulating gallium arsenide photoconductive switch comprises a bottom layer unit and a GaAs layer which are sequentially arranged from bottom to top, the upper surface of the GaAs layer is provided with a combined hole unit; a composite coating layer is laid on the upper surface of the GaAs layer, and the composite coating layer is used for filling the combined hole units; a positive electrode and a negative electrode are embedded in the composite coating layer, and the bottom surfaces of the positive electrode and the negative electrode are in embedded contact with the upper surface of the GaAs layer; the combined hole unit is positioned in a GaAs layer region between the positive electrode and the negative electrode; a cofferdam is arranged on the upper surface of the composite coating layer between the positive electrode and the negative electrode, the projection of the combined hole units on the composite coating layer is in the cofferdam, and the cofferdam is filled with a sealing layer. According to the photoconductive switch, the voltage endurance capability of the switch is improved, and the performance of the switch is improved. The invention also discloses a preparation method of the photoconductive switch.

The utility model discloses a gallium arsenide-containing fragment cleaning structure which comprises a cleaning cylinder, a base is fixedly assembled at the lower end of the cleaning cylinder, the inner wall of the cleaning cylinder is fixedly communicated with a drain valve, the inner wall of the drain valve is in threaded connection with a filter, and through the effect of the cleaning cylinder, the cleaning cylinder is used for containing cleaning liquid and fragment raw materials. The motor drives the rotating shaft to rotate, so that the fragment containing structure is driven to rotate, fragments in the fragment containing structure can be continuously and comprehensively cleaned in cleaning liquid, the cleaning effect is guaranteed, meanwhile, the position of the fragment containing structure can be adjusted through the hoisting structure, the fragment containing structure can be rotationally cleaned through a spray head, and the cleaning effect is better guaranteed; the stability of the equipment is guaranteed through the base, meanwhile, the motor is conveniently fixed, cleaning liquid can be effectively filtered and discharged through matched use of the drainage valve and the filter, it is guaranteed that the cleaning liquid can be repeatedly used, use is convenient, and practicability is high.

The invention belongs to the technical field of semiconductor material characterization, and relates to an antimonide material carrier concentration detection method. The method comprises the following steps: growing a first antimony-containing compound material layer on a conductive gallium antimonide substrate; performing an electrochemical capacitance-voltage test on the first antimony-containing compound material layer to obtain a first carrier concentration value; growing a second antimony-containing compound material layer on the semi-insulating gallium arsenide substrate; performing a Hall effect test on the second antimony-containing compound material layer to obtain a second carrier concentration value; obtaining a carrier concentration correction factor based on the ratio of the second carrier concentration value to the first carrier concentration value; growing an antimony-containing compound material layer on one side, far away from the substrate, of the first antimony-containing compound material layer and / or the second antimony-containing compound material layer, and performing electrochemical capacitance-voltage test on each antimony-containing compound material layer to obtain a corresponding carrier concentration value; and obtaining the carrier concentration of each antimony-containing compound material layer based on the carrier concentration value and the carrier concentration correction factor.

This invention discloses a carbon-doped device for gallium arsenide single crystal growth, applied in the field of single crystal growth. Utilizing the design of the insertion cavity and exhaust channel, particulate matter from the reaction interface is actively guided into the collection hood under the action of airflow and gravity, preventing stagnation and ensuring sufficient contact between the graphite column and the support disk interface. When the reactive gas enters the suddenly increased volume of the collection hood from the narrow insertion cavity, the flow rate drops sharply, thereby accelerating the sedimentation of particulate matter. Furthermore, the large surface area of ​​the inner wall of the collection hood can react and consume graphite particles and melt and adhere quartz particles, achieving wall-side trapping. Through the step-by-step action of the above steps, the particulate matter content in the gas entering the crystal growth zone is significantly reduced, improving crystal purity. In addition, the removal effect of stripped particles is further improved by using guide cylinders one and two, in conjunction with a porous quartz filter ring located inside the exhaust port.

This application provides a method for extracting gallium from gallium arsenide leaching solution in a mixed system of hydrofluoric acid and nitric acid, belonging to the field of rare metal metallurgy technology. The method includes the following steps: adding sodium salt to the gallium arsenide leaching solution to obtain a fluoride-containing filter residue and a defluorinated filtrate; adjusting the pH of the defluorinated filtrate to 5.0-5.5 using liquid alkali to obtain a gallium-containing filter residue; acid washing the fluoride-containing filter residue to obtain a first acid washing solution, which is then mixed with the gallium arsenide leaching solution from step S1; dissolving the gallium-containing filter residue with a strong acid solution to obtain a gallium-containing solution; adding sodium sulfide to remove arsenic to obtain an arsenic-containing filter residue and an arsenic-removed filtrate; adjusting the pH of the arsenic-removed filtrate to greater than 12 using liquid alkali, filtering, and obtaining a gallium-rich filtrate; and performing electrodeposition to obtain gallium metal. This invention utilizes the amphoteric nature of gallium hydroxide to transfer gallium from a complex leaching solution system to a single system for gallium extraction, greatly reducing gallium loss during the removal of arsenic and other impurities.

The utility model belongs to the technical field of gallium arsenide polycrystal synthesis, and particularly relates to a gallium arsenide polycrystal synthesis device which comprises an isostatic pressing graphite synthesis cavity, a baffle is slidably mounted on one side of the isostatic pressing graphite synthesis cavity, and a vacuum pump is fixedly mounted on one side of the isostatic pressing graphite synthesis cavity. An argon box is fixedly mounted at the top of the isostatic pressing graphite synthesis cavity; the synthesis mechanism is used for synthesizing gallium arsenide polycrystals; the synthesis mechanism comprises an isostatic pressing graphite tray; a plurality of quartz tubes participate in gallium arsenide polycrystal synthesis work, so that the yield can be ensured, the risk of breakage of large-size quartz tubes is avoided, and a first electric telescopic rod extends to drive a baffle to move along a first groove so as to prevent the baffle from affecting the quartz tubes placed in an isostatic pressing graphite synthesis cavity; and then a bidirectional threaded rod is driven by an output shaft of a fourth motor to rotate, and two sliding blocks slide along a sixth groove and get close to each other, so that the quartz tube is clamped by two clamping plates.

The invention discloses a gallium arsenide rough polishing liquid pretreatment device which comprises a filtering tank and a filtering plate arranged in the filtering tank, a driving sliding block is fixedly installed on the peripheral side of the filtering plate, a limiting sliding groove is formed in the peripheral side of the filtering plate, a driving cylinder is fixedly installed on the inner side of the filtering plate, a first driving sliding block is fixedly installed on the peripheral side of the driving cylinder, and a second driving sliding block is fixedly installed on the peripheral side of the driving cylinder. The inner surface of the driving cylinder is rotatably connected with a moving body, the middle of the moving body is in threaded connection with a reciprocating lead screw, the upper half portion of the reciprocating lead screw is rotatably connected with a fixing block, the outer surface of the fixing block is rotatably connected with a rotating cylinder, a first spiral groove is formed in the inner wall of the rotating cylinder, and a buffering groove is formed in the lower surface of the rotating cylinder; the inner wall of the buffer groove is fixedly connected with a spring; according to the invention, through the cooperation of the spiral groove and the driving slide block and the transmission of the reciprocating screw rod, composite motion can be realized, and local blockage is avoided, so that the filtering efficiency is improved, the filtering effect is good, and the anti-blocking effect is good.

According to the packaging structure, a main chip and a gallium arsenide chip are in planar interconnection through a rewiring layer, and the back face of the gallium arsenide chip is coated with high-thermal-conductivity / or high-thermal-conductivity heat dissipation glue / or pasted with a high-thermal-conductivity DAF film to be pasted to a high-thermal-conductivity wafer above the high-thermal-conductivity DAF film. A high-density interconnected reconstructed chip is formed, the reconstructed chip is welded and interconnected with a substrate through metal bumps, a heat dissipation cover covers the tops of the substrate and the reconstructed chip, or a heat dissipation ring is mounted on the substrate, and meanwhile, heat dissipation fins cover the top of the reconstructed chip, so that the heat dissipation cover or the heat dissipation fins are in direct bonding contact with a high-thermal-conductivity wafer; the gallium arsenide chip conducts internal heat out through the high-thermal-conductivity wafer, the heat dissipation cover or the heat dissipation fins. Compared with a traditional gallium arsenide chip embedded packaging structure, the gallium arsenide chip embedded packaging structure has the advantages that plastic packaging materials are reduced, the plastic packaging thickness is reduced, warping can be reduced, the processing difficulty can be reduced in terms of the packaging method, and the heat conduction effect is remarkably improved.

The invention provides a three-dimensional heterogeneous integrated structure and method for silicon-based and gallium arsenide-based radio frequency chips, and the structure comprises a printed circuit board which is provided with a first bonding pad region and a second bonding pad region surrounding the first bonding pad region; the conductive column is electrically led out from the second bonding pad area and protrudes out of the surface of the printed circuit board; the first packaging body is used for fan-out packaging of the gallium arsenide-based radio frequency power chip, the first packaging body is arranged in the plurality of conductive columns, fan-out leading-out of the gallium arsenide-based radio frequency power chip is connected with the first bonding pad area, and the height of the first packaging body does not exceed that of the conductive columns; the second packaging body is used for fan-out packaging of the silicon-based radio frequency power chip, the second packaging body is located on the side, away from the printed circuit board, of the first packaging body, and the second packaging body leads out the fan-out of the silicon-based radio frequency power chip to be connected with the conductive columns. According to the invention, the integration level and performance of the three-dimensional heterogeneous integrated silicon-based and gallium arsenide-based radio frequency chip can be improved.

The application discloses a kind of N77 frequency band high gain multistage low noise amplifier, N77 frequency band is 3.3GHz-4.2GHz, it is related to radio frequency circuit design field.Gallium arsenide transistor ATF54143 three-stage cascade amplification structure is used, the design purpose of first stage is to obtain minimum noise, two three-stage is to obtain maximum gain and lower flatness, input-output matching uses series microstrip structure, π type microstrip structure is used at cascade, reduce circuit noise, improve overall gain, LC trap wave filter is added at the end to improve the gain uneven problem caused by multistage cascade.Finally, the gain of the low noise amplifier is greater than 34dB, the gain flatness is ±0.4dB, the noise figure is less than 1dB, the input and output return loss is less than-10dB, the input voltage standing wave ratio VSWR1 is less than 2, the output voltage standing wave ratio VSWR2 is less than 2, the output 1dB compression point is 12.5dBm, improve the performance of poor problems such as high noise, low gain and poor stability of N77 frequency band low noise amplifier at present stage.

This invention provides a method for preparing selenium-doped gallium arsenide polycrystalline material. The method involves placing an arsenic-selenium mixture and elemental gallium at opposite ends of a quartz tube, sealing the tube under vacuum, and then placing it in a three-zone tube furnace. The arsenic-selenium mixture is placed in a low-temperature zone, while the elemental gallium is placed in a high-temperature zone. Heating causes the arsenic-selenium mixture to sublimate and be transported to the high-temperature zone to react with molten gallium. After gradient cooling, selenium-doped gallium arsenide polycrystalline material is obtained. This invention combines gallium arsenide synthesis and selenium doping into a single process, resulting in a simple and uniform doping process. The obtained crystal has a smooth and dense surface, a complete structure, and significantly improved photoelectric properties.

The invention discloses a carbon doping device for gallium arsenide single crystal growth, which is applied to the field of single crystal growth, and is characterized in that particulate matters on a reaction interface are actively guided into a collecting cover under the action of airflow and gravity by utilizing the design of an inserting cavity and an exhaust channel, so that the particulate matters are prevented from being retained to ensure full contact between a graphite column and a bearing disc interface; when reaction gas enters the inner cavity of the collecting cover with the suddenly increased volume from the narrow inserting cavity, the flow speed is suddenly reduced, so that the sedimentation of particulate matters is accelerated; besides, the large-surface-area inner wall of the collecting cover can react and consume graphite particles and can melt and adhere quartz particles to realize wall surface trapping, and through the step-by-step action of the links, the content of particulate matters in gas entering a crystal growth area is finally and remarkably reduced, and the crystal purity is improved; in addition, the removal effect of the stripped particles is further improved through the first guide cylinder and the second guide cylinder in cooperation with a porous quartz filter ring arranged on the inner side of the exhaust hole.

The invention discloses a gallium arsenide single crystal and a preparation method thereof, and belongs to the technical field of crystal preparation. In the preparation process of the gallium arsenide single crystal, provided by the invention, the gallium arsenide seed crystal, the arsenic elementary substance, the boric oxide, the carbon powder, the gallium arsenide return material and the gallium arsenide polycrystal are mixed and sealed, and then are put into a quartz tube of a single crystal growth furnace and are preheated at 500-600 DEG C; the processes of heating and melting, cooling and seeding, shouldering growth, equal-diameter growth at a pulling speed of less than or equal to 2mm / h, ending and the like are carried out, and the temperature range of each temperature measuring point for heating and melting and the cooling rate of each temperature zone in the shouldering growth are controlled, so that the crystal forming rate of the gallium arsenide single crystal can be effectively increased, and the yield of the gallium arsenide single crystal is increased. Meanwhile, the problem that the length of the crystal is relatively short due to the fact that the crystal cannot completely grow due to excessive expansion or shrinkage of the quartz tube in the preparation process can be avoided; in addition, the preparation method provided by the invention is relatively high in efficiency and beneficial to actual production and application.