47 results about "Gallium arsenate" patented technology

The invention discloses a method for composite etching of an electroplating gold plating layer, which comprises the following steps of: manufacturing a photoetching pattern on the front surface of gallium arsenide epitaxy, then evaporating a metal contact layer, depositing a SiNx protective mask layer, performing Mesa mesa etching on the gallium arsenide epitaxy, exposing a high-aluminum layer on the side surface of an epitaxial material, and forming an aluminum oxide limiting layer by adopting a wet oxidation process; a second SiNx protective mask layer continues to be deposited, and the metal contact layer is exposed through dry etching; forming a seed gold layer by adopting magnetron sputtering TiW / Au metal, and forming a photoresist mask with a target electrode pattern on the seed gold layer; electroplating thick gold on the photoresist mask pattern; the photoresist mask layer is removed after completion; the method of combining dry etching and wet etching is adopted to remove the gold plating layer in the non-electroplating area, so that the lateral corrosion of the metal layer is obviously reduced, the high-precision and high-fidelity electrode pattern transfer is realized, the lateral corrosion of the metal layer is reduced, and the passivation protection effect of the device is improved.

This invention discloses a near-space epitaxial method for significantly improving the uniformity of cadmium zinc telluride (CdZnTe) epitaxial films based on air-firing substrate treatment. The method involves air-firing a cleaned and dried gallium arsenide (GaAs) substrate at a predetermined temperature under argon atmosphere. The growth surface is calibrated before air-firing, and the GaAs substrate after air-firing exhibits a matte finish under optimal parameters. A CdZnTe polycrystalline block is used as the growth source. The polycrystalline block is trimmed to fit into the mask apertures and then subjected to grinding, ultrasonic cleaning, and air-firing to remove surface impurities and mechanical damage layers. During the film growth stage, appropriate growth parameters are set in a near-space sublimation furnace to allow CdZnTe to epitaxially grow on the GaAs substrate.

The application discloses a microwave chip testing tool, relates to the technical field of microwave chip testing, and aims to solve the technical problem of insufficient function of clamping equipment in the microwave chip testing tool, and comprises a testing machine table; a conveying assembly is arranged on the testing machine table; a basic transfer assembly is arranged on the testing machine table and is located opposite an output end of the conveying assembly; a plurality of auxiliary tables for energizing operation of microwave chips are arranged below the basic transfer assembly; and a clamping assembly for stable and limited positioning of the microwave chip testing operation is arranged on the side of the auxiliary table. Based on the adjustment and setting of the clamping assembly, the clamping assembly has two different clamping modes, i.e., a flexible clamping state and an elastic retaining state, the two different clamping modes are used to simulate the different thermal expansion coefficients of gallium arsenide and gallium nitride microwave chips in the energizing test, and the functionality of the operation is effectively improved.

Method for producing a surface-treated gallium arsenide substrate, comprising the following steps: a) Providing a gallium arsenide substrate; b) Oxidation treatment of at least one surface of the gallium arsenide substrate in the dry state using UV radiation and / or ozone gas; c) Contacting at least one surface of the gallium arsenide substrate with at least one liquid medium; comprising the following sub-steps: ci) Contacting at least one surface of the gallium arsenide substrate with alkaline aqueous solution, c-ii) subsequent contact of at least one surface of the gallium arsenide substrate with water, c-iii) subsequent contact of at least one surface of the gallium arsenide substrate with acidic aqueous solution, c-iv) subsequent further contact of at least one surface of the gallium arsenide substrate with water. d) Marangoni drying of the gallium arsenide substrate.

The application discloses a high-polishing-rate gallium arsenide CMP etching solution and application thereof, which comprises functional composite abrasive, oxidizing agent, pH regulator, complexing agent and aqueous medium; the functional composite abrasive is metal-doped mesoporous silicon oxide nanoparticles; the same polishing system is used for the first time to simultaneously consider extremely high material removal rate and extremely low surface roughness, and a long-term technical contradiction in the field is solved.

The invention relates to the field of material processing waste liquid treatment, in particular to a gallium arsenide rough polishing liquid preparation waste liquid recovery device which comprises a first box body, a dispersing mechanism for dispersing waste liquid is arranged on the inner side wall of the first box body, first notches are formed in the two side walls of the first box body, and filter plates are slidably connected to the inner side walls of the first notches; according to the waste liquid recovery device for gallium arsenide rough polishing liquid preparation, the cleaning mechanism integrates the composite cleaning function of high-pressure washing and pore channel rotary wiping, full-automatic cleaning is achieved, a cooperative mode of one-use and one-standby is adopted, and the waste liquid recovery device for gallium arsenide rough polishing liquid preparation has the advantages that the waste liquid recovery device is simple in structure, convenient to operate and high in practicability. When the filter plate on the left side is in a working state, the cleaning box on the right side can complete cleaning and standby of the other filter plate, and the waste liquid treatment requirement of large-scale semiconductor production is met.

The invention discloses a high-efficiency reverse mismatched two-junction GaInP / GaInAs battery, the outer edge structure of the reverse mismatched two-junction GaInP / GaInAs battery comprises a gallium arsenide substrate, and a GaAs buffer layer, a GaInP barrier layer, a GaAs cap layer, an AlGaInP top battery, a first tunneling junction, a GaInAs bottom battery and an AlGaInAs cap layer which are arranged on the gallium arsenide substrate in sequence, and the AlGaInP top battery comprises multiple layers of MQW-MM quantum well gradient layers. According to the epitaxial material growth, the absorption spectrum range of the AlGaInP top cell material is expanded through the quantum well gradient layer (MQW-MM), and the short-circuit current density of the top cell is improved, so that the AlGaInP top cell is better matched with a GaInAs bottom cell with excessive current. The MQW-MM quantum well gradient layer serves as a bottom cell lattice constant gradient layer to achieve growth of a target lattice material, red shift is conducted on the absorption cut-off wavelength of a GaAs bottom cell material matched with a top cell GaInP lattice, the overall spectral absorption range is widened, and the GaInAs bottom cell material high in quality and low in defect grows.

The present application provides a glass product with blackened layer, which contains, in terms of weight percentage, SiO2: 51-68%; B2O3: 6-19%; BaO: 6-19%; ZnO: 1-10%; K2O: 0.5-10%; Na2O: more than 0 but less than or equal to 8%; Sb2O3: more than 0 but less than or equal to 2%, wherein SiO2 / BaO is 3.0-11.0. Through reasonable component design, the glass product with blackened layer of the present application has a suitable coefficient of thermal expansion. In some embodiments, the coefficient of thermal expansion of the glass product with blackened layer obtained by the present application can be matched with gallium arsenide material.

The utility model discloses flexible gallium arsenide battery assembly electric resistance welding series equipment, which belongs to the technical field of welding equipment, and comprises a machine table, a supporting platform, a platform slide rail and a gantry slide rail are fixedly connected to the top end of the machine table, a welding platform is arranged on the platform slide rail and corresponds to the supporting platform, a slide seat is arranged on the gantry slide rail, and the gantry slide rail is connected with the platform slide rail. The two symmetrical side ends of the sliding base are fixedly connected with a visual assembly and a lifting sliding rail respectively. The welding platform adsorbs and fixes the gallium arsenide battery, the welding platform has high planeness and can be compatible with series welding of 72 batteries at the same time, the gantry sliding rail enables the visual assembly and the welding assembly to correspond to the gallium arsenide battery by moving the sliding base, the visual assembly recognizes welding spots on the gallium arsenide battery, and the welding assembly recognizes the welding spots on the gallium arsenide battery. The lifting sliding rail controls the welding assembly to move downwards to correspond to the recognized welding spot, the resistance welding power source supplies power to the welding assembly to complete welding of the needed welding spot, and the welded gallium arsenide battery can meet the welding requirement of more than 90% of aerospace equipment.

The invention belongs to the technical field of semiconductor manufacturing, and particularly discloses gallium arsenide single crystal mechanical polishing equipment which comprises a polishing table and a single crystal, the polishing table is connected with a grinding disc through a rotating mechanism arranged on the lower portion of the inner side of the polishing table, the grinding disc is sleeved with a liquid collecting mechanism, and the upper surface of the polishing table is fixedly connected with a frame base; a telescopic cylinder is arranged outside the frame base, an upper connecting rod is connected to the telescopic end of the telescopic cylinder, a rectangular shell is connected to the upper connecting rod through an externally-arranged pneumatic guide piece, the rectangular shell is slidably installed below the outer portion of the guide pipe, and guide sliding mechanisms are arranged on the four peripheral faces of the rectangular shell correspondingly; according to the single crystal wafer polishing device, stable clamping of single crystal wafers of different sizes is achieved, polishing liquid is evenly supplied, the utilization rate is high, polishing defects are effectively avoided, the polishing device is environmentally friendly and free of pollution, the polishing precision and operation safety are remarkably improved, and the high-precision machining requirement of the semiconductor manufacturing field is met.

The invention relates to the technical field of semiconductor material precision machining, in particular to a chemical mechanical polishing solution as well as a preparation method and application thereof. The chemical mechanical polishing solution comprises the following components in percentage by mass: 6-12% of a composite abrasive, 3-7% of a composite oxidant, 2-5% of a complexing agent, 0.5-2% of a phosphine antidote, 0.3-1.5% of a dispersion stabilizer, 0.1-1% of a pH regulator and the balance of water. The composite abrasive is a composite material of aluminum oxide and silicon dioxide; the composite oxidant comprises a sodium hypochlorite solution and a hydrogen peroxide solution. Through reasonable proportioning and synergistic effect of the composite abrasive, the composite oxidant, the complexing agent, the phosphine antidote, the dispersion stabilizer and the pH regulator, the polishing solution is not only suitable for a single substrate, but also compatible with chemical mechanical polishing of three typical third-generation semiconductor materials of indium phosphide, gallium arsenide and germanium, has good universality and process adaptability, and is suitable for industrial production. And the production cost and the process switching complexity can be reduced.

The utility model discloses a gallium arsenide-containing fragment cleaning structure which comprises a cleaning cylinder, a base is fixedly assembled at the lower end of the cleaning cylinder, the inner wall of the cleaning cylinder is fixedly communicated with a drain valve, the inner wall of the drain valve is in threaded connection with a filter, and through the effect of the cleaning cylinder, the cleaning cylinder is used for containing cleaning liquid and fragment raw materials. The motor drives the rotating shaft to rotate, so that the fragment containing structure is driven to rotate, fragments in the fragment containing structure can be continuously and comprehensively cleaned in cleaning liquid, the cleaning effect is guaranteed, meanwhile, the position of the fragment containing structure can be adjusted through the hoisting structure, the fragment containing structure can be rotationally cleaned through a spray head, and the cleaning effect is better guaranteed; the stability of the equipment is guaranteed through the base, meanwhile, the motor is conveniently fixed, cleaning liquid can be effectively filtered and discharged through matched use of the drainage valve and the filter, it is guaranteed that the cleaning liquid can be repeatedly used, use is convenient, and practicability is high.

The invention belongs to the technical field of semiconductor material characterization, and relates to an antimonide material carrier concentration detection method. The method comprises the following steps: growing a first antimony-containing compound material layer on a conductive gallium antimonide substrate; performing an electrochemical capacitance-voltage test on the first antimony-containing compound material layer to obtain a first carrier concentration value; growing a second antimony-containing compound material layer on the semi-insulating gallium arsenide substrate; performing a Hall effect test on the second antimony-containing compound material layer to obtain a second carrier concentration value; obtaining a carrier concentration correction factor based on the ratio of the second carrier concentration value to the first carrier concentration value; growing an antimony-containing compound material layer on one side, far away from the substrate, of the first antimony-containing compound material layer and / or the second antimony-containing compound material layer, and performing electrochemical capacitance-voltage test on each antimony-containing compound material layer to obtain a corresponding carrier concentration value; and obtaining the carrier concentration of each antimony-containing compound material layer based on the carrier concentration value and the carrier concentration correction factor.

This invention discloses a carbon-doped device for gallium arsenide single crystal growth, applied in the field of single crystal growth. Utilizing the design of the insertion cavity and exhaust channel, particulate matter from the reaction interface is actively guided into the collection hood under the action of airflow and gravity, preventing stagnation and ensuring sufficient contact between the graphite column and the support disk interface. When the reactive gas enters the suddenly increased volume of the collection hood from the narrow insertion cavity, the flow rate drops sharply, thereby accelerating the sedimentation of particulate matter. Furthermore, the large surface area of ​​the inner wall of the collection hood can react and consume graphite particles and melt and adhere quartz particles, achieving wall-side trapping. Through the step-by-step action of the above steps, the particulate matter content in the gas entering the crystal growth zone is significantly reduced, improving crystal purity. In addition, the removal effect of stripped particles is further improved by using guide cylinders one and two, in conjunction with a porous quartz filter ring located inside the exhaust port.

This application provides a method for extracting gallium from gallium arsenide leaching solution in a mixed system of hydrofluoric acid and nitric acid, belonging to the field of rare metal metallurgy technology. The method includes the following steps: adding sodium salt to the gallium arsenide leaching solution to obtain a fluoride-containing filter residue and a defluorinated filtrate; adjusting the pH of the defluorinated filtrate to 5.0-5.5 using liquid alkali to obtain a gallium-containing filter residue; acid washing the fluoride-containing filter residue to obtain a first acid washing solution, which is then mixed with the gallium arsenide leaching solution from step S1; dissolving the gallium-containing filter residue with a strong acid solution to obtain a gallium-containing solution; adding sodium sulfide to remove arsenic to obtain an arsenic-containing filter residue and an arsenic-removed filtrate; adjusting the pH of the arsenic-removed filtrate to greater than 12 using liquid alkali, filtering, and obtaining a gallium-rich filtrate; and performing electrodeposition to obtain gallium metal. This invention utilizes the amphoteric nature of gallium hydroxide to transfer gallium from a complex leaching solution system to a single system for gallium extraction, greatly reducing gallium loss during the removal of arsenic and other impurities.

The invention discloses a gallium arsenide rough polishing liquid pretreatment device which comprises a filtering tank and a filtering plate arranged in the filtering tank, a driving sliding block is fixedly installed on the peripheral side of the filtering plate, a limiting sliding groove is formed in the peripheral side of the filtering plate, a driving cylinder is fixedly installed on the inner side of the filtering plate, a first driving sliding block is fixedly installed on the peripheral side of the driving cylinder, and a second driving sliding block is fixedly installed on the peripheral side of the driving cylinder. The inner surface of the driving cylinder is rotatably connected with a moving body, the middle of the moving body is in threaded connection with a reciprocating lead screw, the upper half portion of the reciprocating lead screw is rotatably connected with a fixing block, the outer surface of the fixing block is rotatably connected with a rotating cylinder, a first spiral groove is formed in the inner wall of the rotating cylinder, and a buffering groove is formed in the lower surface of the rotating cylinder; the inner wall of the buffer groove is fixedly connected with a spring; according to the invention, through the cooperation of the spiral groove and the driving slide block and the transmission of the reciprocating screw rod, composite motion can be realized, and local blockage is avoided, so that the filtering efficiency is improved, the filtering effect is good, and the anti-blocking effect is good.

The application discloses a kind of N77 frequency band high gain multistage low noise amplifier, N77 frequency band is 3.3GHz-4.2GHz, it is related to radio frequency circuit design field.Gallium arsenide transistor ATF54143 three-stage cascade amplification structure is used, the design purpose of first stage is to obtain minimum noise, two three-stage is to obtain maximum gain and lower flatness, input-output matching uses series microstrip structure, π type microstrip structure is used at cascade, reduce circuit noise, improve overall gain, LC trap wave filter is added at the end to improve the gain uneven problem caused by multistage cascade.Finally, the gain of the low noise amplifier is greater than 34dB, the gain flatness is ±0.4dB, the noise figure is less than 1dB, the input and output return loss is less than-10dB, the input voltage standing wave ratio VSWR1 is less than 2, the output voltage standing wave ratio VSWR2 is less than 2, the output 1dB compression point is 12.5dBm, improve the performance of poor problems such as high noise, low gain and poor stability of N77 frequency band low noise amplifier at present stage.

This invention provides a method for preparing selenium-doped gallium arsenide polycrystalline material. The method involves placing an arsenic-selenium mixture and elemental gallium at opposite ends of a quartz tube, sealing the tube under vacuum, and then placing it in a three-zone tube furnace. The arsenic-selenium mixture is placed in a low-temperature zone, while the elemental gallium is placed in a high-temperature zone. Heating causes the arsenic-selenium mixture to sublimate and be transported to the high-temperature zone to react with molten gallium. After gradient cooling, selenium-doped gallium arsenide polycrystalline material is obtained. This invention combines gallium arsenide synthesis and selenium doping into a single process, resulting in a simple and uniform doping process. The obtained crystal has a smooth and dense surface, a complete structure, and significantly improved photoelectric properties.

The invention discloses a carbon doping device for gallium arsenide single crystal growth, which is applied to the field of single crystal growth, and is characterized in that particulate matters on a reaction interface are actively guided into a collecting cover under the action of airflow and gravity by utilizing the design of an inserting cavity and an exhaust channel, so that the particulate matters are prevented from being retained to ensure full contact between a graphite column and a bearing disc interface; when reaction gas enters the inner cavity of the collecting cover with the suddenly increased volume from the narrow inserting cavity, the flow speed is suddenly reduced, so that the sedimentation of particulate matters is accelerated; besides, the large-surface-area inner wall of the collecting cover can react and consume graphite particles and can melt and adhere quartz particles to realize wall surface trapping, and through the step-by-step action of the links, the content of particulate matters in gas entering a crystal growth area is finally and remarkably reduced, and the crystal purity is improved; in addition, the removal effect of the stripped particles is further improved through the first guide cylinder and the second guide cylinder in cooperation with a porous quartz filter ring arranged on the inner side of the exhaust hole.

The invention discloses a method for screening micro-damage after welding of a gallium arsenide battery. The method comprises the following steps: step 1, deploying a measurement and control device; 2, initializing the measurement and control device; step 3, circuit state switching; step 4, parallel resistance calculation; 5, damage judgment and shunting; according to the method, detection is synchronously carried out in the pressure maintaining stage after electric resistance welding, no extra production procedure needs to be added, and the problems that the system complexity is improved and the production takt is reduced due to electroluminescence detection are solved; the parallel resistance Rsh of the battery can be accurately measured and calculated within milliseconds, whether the battery is qualified or not can be detected after single welding, unqualified products are prevented from entering a subsequent surface mounting process, the problem of labor hour waste caused by a solar simulator scanning IV curve screening mode is solved, invalid labor hour consumption caused by whole-course welding when the battery is damaged at an early stage is thoroughly avoided, and the production efficiency is improved. And the requirements of an automatic production line can be met, the production cost is reduced, the production efficiency is improved, and the current situation of low yield of thinned batteries and flexible batteries is improved.

The application provides a gallium arsenide battery epitaxial structure and a preparation method thereof. The gallium arsenide battery epitaxial structure comprises a substrate, a sacrificial layer and a battery layer arranged on the substrate, the sacrificial layer and the battery layer are sequentially stacked in a direction away from the substrate, the sacrificial layer can be separated from the battery layer by wet etching assisted substrate, and the thickness of the sacrificial layer gradually decreases from an edge region to a central region. The gallium arsenide battery epitaxial structure has a sacrificial layer structure design, which is helpful for the etching liquid to flow from the edge region of the sacrificial layer to the central region after the edge region is etched, thereby accelerating the overall etching rate of the sacrificial layer, and at the same time, the bending degree of the battery layer can be relatively reduced to a certain extent after the edge region of the sacrificial layer is etched by the etching liquid, thereby reducing the possibility of the closed formation of the bent battery layer and the substrate to a certain extent, the etching liquid can quickly etch the middle region of the sacrificial layer, and the peeling efficiency of the substrate is improved.

The invention discloses a method for epitaxial growth of a gallium antimonide film crystal on the surface of gallium arsenide, and belongs to the technical field of synthesis of compound semiconductor materials. The method comprises the following steps: step 1, placing a gallium arsenide substrate wafer on a bracket in a crystal reaction furnace, and vacuumizing the crystal reaction furnace; 2, conveying argon to a crystal reaction furnace, and replacing air; step 3, conveying antimonane to a crystal reaction furnace, and driving argon in a furnace body with antimonane steam; 4, trimethyl gallium is conveyed to a crystal reaction furnace; step 5, heating the crystal reaction furnace to 480-500 DEG C, and reacting for 0.5-3 hours at the temperature of 480-500 DEG C; then raising the temperature to 850 to 870 DEG C, and reacting for 1 to 1.5 hours at the temperature; and step 6, gradually reducing the temperature of the crystal reaction furnace to room temperature, and taking out a product to obtain an epitaxial gallium antimonide thin film crystal finished product. According to the invention, the gallium antimonide crystal epitaxial layer with uniform thickness and good quality can be obtained on the gallium arsenide substrate at a low temperature in a short time.

This invention relates to the field of precision machining technology for semiconductor materials, and in particular to a chemical mechanical polishing (CMP) slurry, its preparation method, and its application. The CMP slurry comprises the following components by mass percentage: 6-12% composite abrasive, 3-7% composite oxidant, 2-5% complexing agent, 0.5-2% phosphine detoxifier, 0.3-1.5% dispersant stabilizer, 0.1-1% pH adjuster, and water as the balance. The composite abrasive is a composite material of alumina and silicon dioxide. The composite oxidant includes sodium hypochlorite solution and hydrogen peroxide solution. This invention, through the rational proportioning and synergistic effect of the composite abrasive, composite oxidant, complexing agent, phosphine detoxifier, dispersant stabilizer, and pH adjuster, is not only suitable for single substrates but also compatible with the CMP polishing of three typical third-generation semiconductor materials: indium phosphide, gallium arsenide, and germanium. It exhibits good versatility and process adaptability, helping to reduce production costs and process changeover complexity.

To provide a semiconductor structure and a manufacturing method thereof.SOLUTION: The semiconductor structure includes a substrate, a semiconductor composite layer disposed on the substrate, and a metal electrode structure disposed on the semiconductor composite layer. The semiconductor composite layer includes an N-type gallium arsenide (GaAs) layer disposed on the substrate, a P-type gallium arsenide (GaAs) epitaxial layer disposed on the N-type gallium arsenide (GaAs) layer, and a P-type aluminum gallium arsenide (AlGaAs) epitaxial layer 116 disposed on the P-type gallium arsenide (GaAs) epitaxial layer. The metal electrode structure includes a metal pad layer 122, a metal barrier layer 124 and a metal stack layer 126. The metal barrier layer 124 has a thickness greater than or equal to 500 angstroms (Å) to prevent the metal stack 126 from diffusing through the metal barrier layer 124 to the metal pad layer 122 during the heating process.SELECTED DRAWING: Figure 5

A semi-insulating gallium arsenide single crystal preparation method includes: adding crystal material to a PBN crucible; adding graphite in a quartz cap; loading the hermetically connected quartz cap and quartz crucible into a VGF single crystal furnace in different temperature zones; controlling the temperature zone in which the quartz crucible is located at a temperature of material melting, while controlling the temperature zone is which the quartz cap is located at 1000±50° C.; preserving the temperature of material melting when the temperature zone in which the quartz crucible is located reaches the temperature of material melting, and controlling the temperature zone in which the quartz cap is located at 1200±50° C. and preserving the temperature for 4 to 50 h; lowering a temperature in the temperature zone to 1000±50° C.; and cooling and discharging.

This invention relates to a photoelectrocatalytic reaction device without external bias and its applications, belonging to the field of energy materials and catalysis technology. The invention utilizes nanosheet nickel hydroxide, prepared by electrodeposition on hydrophilic carbon paper, as a catalyst for the oxidation of 5-hydroxymethylfurfural (HMF). A binuclear copper molecule is synthesized as a carbon dioxide (CO2) reduction catalyst via a reflux reaction of 1,2-bis(diphenylphosphine)benzene and copper bromide. The HMF oxidation catalyst is connected to the anode of a triple-junction gallium arsenide battery, encapsulated, and placed in the anode chamber. A hydrophobic carbon paper loaded with the binuclear copper molecule catalyst is connected to the cathode. Under no external bias, the anode efficiently oxidizes HMF to FDCA (2,5-furandicarboxylic acid) through the synergistic effect of nickel hydroxide and tetramethylpiperidine oxide (TEMPO), while the cathode simultaneously reduces CO2. This system exhibits high selectivity, high conversion rate, and excellent catalytic efficiency. The device is reusable, and the catalyst preparation is simple and the raw materials are inexpensive and readily available.

This invention relates to the field of photocatalysis technology, specifically to a modified gallium arsenide wafer grinding waste catalyst, its preparation method, and its application. The preparation method includes the following steps: Step 1: Grinding the gallium arsenide grinding waste, washing it with solvent, and drying it to obtain powder; Step 2: Placing the powder obtained in Step 1 into a covered crucible and placing it in a muffle furnace for heat treatment. After maintaining the heat treatment for a period of time, the mixture is naturally cooled to room temperature to obtain a solid material that has undergone thermal polymerization treatment; Step 3: Grinding the thermally polymerized solid material into powder, washing it several times with solvent in a centrifuge, and finally filtering and drying it to obtain the modified gallium arsenide wafer grinding waste catalyst. This technical solution achieves efficient resource utilization through "waste treatment," directly converting hazardous solid waste into a high-value-added catalyst, and simultaneously solving the problems of waste disposal costs and environmental risks.

The invention discloses a low-cost reverse matching two-junction GaInP / GaAs solar cell and a preparation method thereof, the outer edge structure of the solar cell comprises a gallium arsenide substrate, and three GaAs buffer layers, three GaInP barrier layers, three GaAs cap layers, three AlGaInP top cells, a first tunneling junction, three GaAs bottom cells and three AlGaAs cap layers which are arranged on the gallium arsenide substrate, the three GaAs buffer layers, the three GaInP barrier layers, the three GaAs cap layers, the three AlGaInP top cells, the three GaAs bottom cells and the three AlGaAs cap layers are all middle layers, and the growth rate of the middle layers is larger than that of the upper layers and the lower layers of the three GaAs buffer layers, the three GaInP barrier layers, the three GaAs cap layers, the three AlGaInP top cells and the three GaAs bottom cells. The growth mode of the epitaxial structure adopts a slow-fast-slow gradual-change growth mode with different rates, so that a buffer material has a lower reverse domain, layered growth of an arsenic or phosphorus compound material is realized, interface defects of an arsenide material and a phosphide material at an interface or a steep interface can be overcome, efficient growth of an epitaxial material is met, and the performance of the epitaxial structure is improved. The epitaxial growth time is reduced, and the growth time cost is reduced.

The invention discloses an efficient corrosion method of a monolithic gallium arsenide substrate, which comprises the following steps: placing a gallium arsenide substrate wafer in a corrosive liquid and continuously moving in the soaking process to inhibit bubble attachment; the soaked wafer rotates around the axis of the wafer, mixed liquid medicine of NHOH and HO is continuously supplied to the surface of the wafer at the same time, and corrosion by-products are removed in real time by means of centrifugal force generated by rotation and liquid medicine scouring force; wafer surface images are continuously obtained in the rotary corrosion process, a gallium arsenide residual area is recognized through an image processing algorithm, and medicine liquid supply is immediately stopped when it is judged that the area of the area reaches a preset end point condition; washing with ultrapure water, washing with two fluids mixed by ultrapure water and nitrogen, and washing with ultrapure water again so as to remove residual liquid medicine and by-products on the surface; the liquid on the surface of the wafer is removed by increasing the rotation speed of the wafer in a stepped manner and cooperating with nitrogen purging, and drying is completed.

The utility model discloses a deoxidizing tray for a gallium arsenide wafer, and particularly relates to the technical field of wafers, the deoxidizing tray comprises a base for deoxidizing the gallium arsenide wafer, the middle part of the top surface of the base is provided with a placing groove for placing the gallium arsenide wafer, and the outer surface of the base is fixedly provided with a guide ring. And a plurality of movable rods are slidably connected to the outer surface of the guide ring. According to the deoxidizing tray for the gallium arsenide wafer, in actual work, the multiple movable rods are moved according to the diameter size of the gallium arsenide wafer so that the positions of the multiple limiting plates can be adjusted, the movable rods are fixed by inserting the first threaded fasteners into the fixing holes and the adjusting holes which are overlapped, and the movable rods are fixed through the first threaded fasteners. The gallium arsenide wafer is placed in the placing groove, the cover plate and the base are connected through the second threaded fastener, and the pressing plate in the cover plate can prevent the gallium arsenide wafer from falling off from the placing groove, so that the gallium arsenide wafers with different diameter sizes can be conveniently installed, and the application range is expanded.