Method and device for manufacturing gallium arsenide polycrystals

A manufacturing method and technology of gallium arsenide, applied in the field of polycrystalline synthesis, can solve the problems of short service life of boron nitride boat and high breakage rate of the nozzle of quartz tube

Inactive Publication Date: 2019-08-20
FIRST SEMICON MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method and device for manufacturing gallium arsenide polycrystals, so as to solve the problem

Method used

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  • Method and device for manufacturing gallium arsenide polycrystals
  • Method and device for manufacturing gallium arsenide polycrystals
  • Method and device for manufacturing gallium arsenide polycrystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] (1) Loading: Put 6N arsenic and 6N gallium in a boron nitride boat, then put them into a quartz tube, and put a quartz cap at the mouth of the quartz tube.

[0056] (2) Quartz tube seal welding: weld the quartz tube and the quartz cap with a hydrogen-oxygen flame to connect the two together.

[0057] (3) Furnace loading: put the quartz tube containing arsenic and gallium into the synthesis furnace, insert Tc in the corresponding position, and plug asbestos at both ends of the synthesis furnace.

[0058] (4) Heating the melting material: after baking the material, close the vacuum valve, heat up, and make the arsenic vapor and gallium synthesize gallium arsenide polycrystalline liquid at high temperature.

[0059] (5) Polycrystalline synthetic growth: the temperature curve is controlled by the program, so that the temperature of the quartz tube filled with arsenic and gallium is gradually reduced from the beginning to the end, so that the synthesized gallium arsenide liq...

Embodiment 2

[0064] (1) Loading: Put 6N arsenic and 6N gallium in a boron nitride boat, then put them into a quartz tube, and put a quartz cap at the mouth of the quartz tube.

[0065] (2) Quartz tube seal welding: weld the quartz tube and the quartz cap with a hydrogen-oxygen flame to connect the two together.

[0066] (3) Furnace loading: Put the quartz tube containing arsenic and gallium into the synthesis furnace, insert Tc at the corresponding position, and plug asbestos at both ends of the synthesis path.

[0067] (4) Heating the melting material: after baking the material, close the vacuum valve, heat up, and make the arsenic vapor and gallium synthesize gallium arsenide polycrystalline liquid at high temperature.

[0068] (5) Polycrystalline synthetic growth: the temperature curve is controlled by the program, so that the temperature of the quartz tube filled with arsenic and gallium is gradually decreased from the beginning to the end, so that the synthesized gallium arsenide liqu...

Embodiment 3

[0073] (1) Loading: Put 6N arsenic and 6N gallium in a boron nitride boat, then put them into a quartz tube, and put a quartz cap at the mouth of the quartz tube.

[0074] (2) Quartz tube seal welding: weld the quartz tube and the quartz cap with a hydrogen-oxygen flame to connect the two together.

[0075] (3) Furnace loading: Put the quartz tube containing arsenic and gallium into the synthesis furnace, insert Tc at the corresponding position, and plug asbestos at both ends of the synthesis path.

[0076] (4) Heating the melting material: after baking the material, close the vacuum valve, heat up, and make the arsenic vapor and gallium synthesize gallium arsenide polycrystalline liquid at high temperature.

[0077] (5) Polycrystalline synthetic growth: the temperature curve is controlled by the program, so that the temperature of the quartz tube filled with arsenic and gallium is gradually decreased from the beginning to the end, so that the synthesized gallium arsenide liqu...

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Abstract

The invention discloses a method and a device for manufacturing gallium arsenide polycrystals. The method comprises the following steps: reacting an arsenic-loaded nitride boat with a gallium-loaded boron nitride boat in a sealed quartz tube through a horizontal gradient solidification process to form the gallium arsenide polycrystals; and cutting off a quartz cap at the tube mouth of the quartz tube, and taking out the gallium arsenide polycrystals, wherein the cutting process is carried out by the following steps: fixing the quartz tube on a cutting table; arranging a running saw blade at aposition coplanar with the cross section, right below the quartz cap, of the quartz tube; and moving the saw blade to the quartz tube in the plane of the cross section until the quartz tube is cut out. The manufacturing method can effectively avoid the problem of breakage of two ends of every boron nitrides boat, caused by the frequent collision of the boron nitride boats with the gallium arsenidepolycrystals, so the service life of the boron nitride boats is effectively improved, and the tube mouth breakage rate of the quartz tube is effectively reduced.

Description

technical field [0001] The invention relates to the technical field of polycrystal synthesis, in particular to a method and device for manufacturing gallium arsenide polycrystal. Background technique [0002] Gallium arsenide is a binary compound, the vapor pressure of arsenic is high, and gallium and arsenic are easily oxidized, so it is not easy to synthesize polycrystalline gallium arsenide. At present, the GaAs polycrystal synthesized by the horizontal gradient solidification method is the most widely used in industry. The equipment required by the horizontal gradient solidification method is simple. In the process, the arsenic and gallium sealed in the quartz tube are not affected by the external environment; after the synthesis, the polycrystal is purified by directional solidification to obtain a GaAs polycrystal with higher purity than the raw material. After the existing gallium arsenide polycrystal is synthesized by using a quartz tube, the quartz tube needs to be...

Claims

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Application Information

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IPC IPC(8): C30B29/42C30B28/06
CPCC30B28/06C30B29/42
Inventor 向丽君王金灵朱凌强周铁军刘留罗小龙
Owner FIRST SEMICON MATERIALS
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