Preparation of glowing oxygen doped gallium arsenide polycrystalline film

Abstract

The invention relates to a preparation method for an oxygen doped gallium arsenide polycrystal film which can give out red lights. In the method, gallium arsenide, gallium oxide and indium oxide are used as materials; a gallium arsenide substrate is used as the growing carrier of the film; hydrochloric acid, absolute ethyl alcohol, oxyful and de-ionized water are used as the washing agents; argon is used as a supporting gas and a protective gas; sodium hypochlorite, sodium hydroxide, phosphoric acid and de-ionized water are used as waste gas recycling agents; the preparation is carried out in a tubular high temperature furnace; an L-shaped quartz boat is arranged in a high temperature section in a quartz tube; the powder of the materials is arranged at the left part of the L-shaped quartz boat; the gallium arsenide substrate is obliquely arranged at the right part; under the temperature of 800 minus or plus 5 DEG C and the atmosphere of argon, state conversion, vapor deposition and film growing are carried out on the powder of the materials to grow into the black oxygen doped gallium arsenide polycrystal film which is in a wave shape formed by connecting gluing particles and gives out red lights; poisonous gases are recycled in the preparation, thus not polluting the environment; the preparation method has the advantages of short technique flow, fast film shaping and high product purity which can achieve 99 percent.

Description

technical field [0001] The invention relates to a preparation method of an oxygen-doped gallium arsenide polycrystalline thin film emitting red light, and belongs to the technical field of inorganic compounds and semiconductor light-emitting materials. Background technique [0002] Due to its unique and excellent semiconductor light-emitting characteristics, gallium arsenide GaAs has become the most important semiconductor material after silicon, and has been applied in various technical fields, such as microwave diodes, integrated circuits, infrared light-emitting diodes, laser diodes , solar cells, optical fiber communications, mobile communications, etc. Its electron mobility is six times that of silicon, so it can be used as high-speed devices, detectors, laser devices, etc. [0003] Gallium arsenide is an intermetallic compound formed by combining metal gallium and semimetal arsenic at an atomic ratio of 1:1. It has a gray metallic luster and its crystal structure has a...

AI Technical Summary

Problems solved by technology

[0005] At present, the preparation of polycrystalline gallium arsenide thin films mostly adopts technologies such as plasma reactive deposition, chemical vapor deposition, vacuum evaporation and vacuum sputtering. Crystal thin film materials, but these preparation methods require expensive equipment and high-priced raw materials, which increases the cost of the product, and there are still some technical deficiencies and drawbacks

Images