77 results about "Reactive deposition" patented technology

Thin semiconductor foils can be formed using light reactive deposition. These foils can have an average thickness of less than 100 microns. In some embodiments, the semiconductor foils can have a large surface area, such as greater than about 900 square centimeters. The foil can be free standing or releasably held on one surface. The semiconductor foil can comprise elemental silicon, elemental germanium, silicon carbide, doped forms thereof, alloys thereof or mixtures thereof. The foils can be formed using a release layer that can release the foil after its deposition. The foils can be patterned, cut and processed in other ways for the formation of devices. Suitable devices that can be formed form the foils include, for example, photovoltaic modules and display control circuits.

Light reactive deposition uses an intense light beam to form particles that are directly coated onto a substrate surface. In preferred embodiments, a coating apparatus comprising a noncircular reactant inlet, optical elements forming a light path, a first substrate, and a motor connected to the apparatus. The reactant inlet defines a reactant stream path. The light path intersects the reactant stream path at a reaction zone with a product stream path continuing from the reaction zone. The substrate intersects the product stream path. Also, operation of the motor moves the first substrate relative to the product stream. Various broad methods are described for using light driven chemical reactions to produce efficiently highly uniform coatings.

Methods are disclosed for gas-cluster ion-beam deposition of thin films on silicon wafers rendered free of native oxides by termination of the surface bonds and subsequent reactive deposition. Hydrogen termination of the surface of silicon renders it inert to reoxidation from oxygen-containing environmental gasses, even those found as residue in vacuum systems, such as those used to deposit films. Nitrogen termination improves the interface with overlying metal-oxide thin films. The film is formed in intimate contact with the silicon crystal surface forming a nearly ideal interface.

This invention provides a means to deposit thin films and coatings on a substrate using an electron beam generated plasma. The plasma can be used as an ion source in sputter applications, where the ions are used to liberate material from a target surface which can then condense on a substrate to form the film or coating. Alternatively, the plasma may be combined with existing deposition sources including those based on sputter or evaporation techniques. In either configuration, the plasma serves as a source of ion and radical species at the growing film surface in reactive deposition processes. The electron beam large area deposition system (EBELADS) is a new approach to the production of thin films or coatings up to and including several square meters.

Light reactive deposition uses an intense light beam to form particles that are directly coated onto a substrate surface. In some embodiments, a coating apparatus comprising a noncircular reactant inlet, optical elements forming a light path, a first substrate, and a motor connected to the apparatus. The reactant inlet defines a reactant stream path. The light path intersects the reactant stream path at a reaction zone with a product stream path continuing from the reaction zone. The substrate intersects the product stream path. Also, operation of the motor moves the first substrate relative to the product stream. Various broad methods are described for using light driven chemical reactions to produce efficiently highly uniform coatings.

Methods for the production of ceramic chip capacitors include the deposition of at least two layers of electrical conductor and at least one layer of a dielectric between electrical conducting layers. The compositions in the dielectric layer are deposited from a flow in which flowing reactants react to form particles in a reaction driven by light at a light reaction zone. In some embodiments, a plurality of dielectric layers is deposited. Suitable dielectric materials include barium titanate. A collection of barium titanate particles can be formed in the coating process having an average diameter less than about 90 nanometers. Thus, ceramic chip capacitors can be formed with barium titanate particles having an average diameter less than about 90 nanometers.

The invention relates to a preparation method of flaky zinc powder. The preparation method comprises the following steps in sequence: machining metallic zinc into a flake and using the flake as a soluble anode; in an anode chamber of an electrochemical reactor, taking zinc sulfate and sulfuric acid water solution as an electrolyte, oxidizing the soluble anode into zinc ions and enabling the zinc ions to enter anolyte; and after solid-liquid separation and anolyte impurity removal, adding an alkyl glycoside surfactant to the anolyte and adjusting the pH value to 5.0-6.5, then injecting the electrolyte into a cathode chamber of the electrochemical reactor, carrying out electrochemical reduction reaction on the cathode and separating out metallic zinc through deposition, simultaneously starting an ultrasonic generating device to strip metallic zinc on the cathode and deposit metallic zinc in the electrolyte below the cathode and then obtaining the qualified flaky zinc powder through solid-liquid separation, washing, vacuum drying, screening and packaging. The preparation method has the advantages of reasonable and convenient process, safe and reliable preparation course and good prepared product quality.

Light reactive deposition can be effectively used to deposit one or more components of an electrochemical cell. In particular, electrodes, electrolytes, and electrical interconnects can be deposited from reactive flow. In certain embodiments, the reactant flow includes a reactant stream that intersects the light beam to drive a reaction in the photoreaction zone to produce a product deposited on the substrate (422). This method is extremely versatile for making a variety of compositions useful especially in electrochemical cells and fuel cells. The properties of the material, including density and porosity, can be adjusted based on the deposition properties and any subsequent treatment including, for example, heat treatment.

The invention discloses a lithium titanate composite electrode material with a fluoride surface coating layer and a preparation method thereof. The coating layer of the composite electrode material is fluoride (MxFy) of one or more types of metals, wherein M is lithium, magnesium, strontium, barium, aluminum or lead, the thickness of the coating layer is 0.1-100nm, the coating layer accounts for 0.01-20% of the mass ratio of the composite electrode material, and lithium titanate is a crystal material with a spinel structure. According to the preparation method, a water-soluble salt of M and ammonium fluoride are used as raw materials, and n the surface of lithium titanate is in situ coated with fluoride through in situ chemical reaction deposition in combination with inert atmosphere heat treatment. The coating layer of the composite electrode material can shield active spots on the surface of the lithium titanate electrode material so that the lithium titanate electrode material can not bloat and has the advantages of good rate performance, high capacity retention ratio and excellent cycle performance; and the lithium titanate composite electrode material is simple and convenient in process, low in cost and suitable for large-scale production and has a wide market prospect.

A gas lance unit configured for a reactive deposition process with a plurality of spaced apart crucibles, wherein spaces are provided between the crucibles, is described. The gas lance unit includes a gas guiding tube having one or more outlets for providing a gas for the reactive deposition process, and a condensate guiding element for guiding a condensate, particularly an aluminum condensate, to one or more positions above the spaces.

The invention discloses an MXene two-dimensional material and a preparation method thereof, and belongs to the field of materials. The MXene two-dimensional material comprises an MXene precursor and areaction deposition solution, wherein the reaction deposition solution is a mixed solution of villiaumite and boric acid; the villiaumite comprises one or more of ammonium fluoride, ammonium hydrogenfluoride and metal fluoride salt; the molar ratio of villiaumite to boric acid in the mixed solution is (0.01-0.3):(0.02-1.5), and the MXene precursor comprises any one or a combination of more thantwo of Ti3AlC2, Ti2AlC, V2AlC, Mo2AlC and Nb2AlC. According to the MXene two-dimensional material, villiaumite and boric acid are adopted as reaction deposition solution, the reaction is mild and easyto control, and the prepared MXene two-dimensional material has large interlayer spacing and large specific surface area. The invention further discloses a preparation method of the MXene two-dimensional material and application of the MXene two-dimensional material to electrode preparation.

The invention discloses a preparation method of a niobium-doped titanium dioxide coated glass. The preparation method adopts a chemical vapor deposition method, and comprises the following steps of (1) mixing a titanium source and a niobium source, so as to obtain a source material mixture; or, mixing the titanium source, the niobium source and a solvent, so as to obtain the source material mixture; (2) converting the source material mixture into vapor-phase reaction gas by an air bubbling or evaporating and gasifying method; (3) carrying the vapor-phase reaction gas to the pretreated high-temperature glass substrate by carrying gas, reacting, and depositing, so as to obtain the niobium-doped titanium dioxide coated glass. The prepared niobium-doped titanium dioxide coated glass has the advantages that the bonding force of a film layer is excellent, and the physical stability and chemical stability are good; the thin film is made of anatase-phase titanium dioxide, and the mass concentration of the niobium-doped material is 0.5 to 15%; the photo-induced super-hydrophilicity is realized; the niobium-doped titanium dioxide coated glass is prepared at high temperature, and is suitablefor the low-cost preparation of large-area coated film; the cleaning is easy, and the stain-resistant property is realized.

The invention provides a chromium carbide modified iron-based metal bipolar plate for a fuel battery and a preparation method thereof. An iron-based alloy metal plate is subjected to surface modification by using plasma carburization and a combined thermal reactive deposition and diffusion surface modification process. The modified surface of the metal plate is a chromium carbide diffusion layer with high conductivity and corrosion resistance, the thickness is 1-30 microns, and the corrosion speed is lower than 10 microamperes/square centimeter. When the pressure is 150-200 N/square centimeter, the contact resistance is 10-20 micro-ohms*square centimeter, and a chromium carbide diffusion layer is made of Cr3C2 and/or Cr7C3 and/or Cr23C6. According to the method provided by the invention, the corrosion resistance of the metal bipolar plate can be obviously improved in a condition of ensuring the intensity of the bipolar plate and not influencing battery properties of the bipolar plate. The chromium carbide diffusion layer with the modified surface and a base body are in metallurgical combination. Furthermore, components of the chromium carbide diffusion layer can be controlled by adjusting isothermal diffusion temperature and time.

The invention provides a production method of silicon oxide, and the production method comprises the following steps of: warming a heating device, setting a to-be-filmed substrate, and introducing nitrogen to remove the impurity gas in the reaction chamber; bringing the reaction precursor ethyl silicate into the reaction chamber by the nitrogen carrier gas; conveying the oxygen in an oxygen source to an ozone generator, conveying the generated ozone into the reaction chamber; performing reactive deposition on the surface of the to-be-filmed substrate by the precursor ethyl silicate and the ozone in the reaction chamber, so as to prepare the silicon oxide film. In the production method of the silicon oxide film provided by the invention, a thermal reaction mode is used, plasma damage of the to-be-filmed substrate is avoided, and the production device of the silicon oxide film is simple, the technological process is easy to control, and the deposition temperature of the silicon oxide film is lowered effectively. Moreover, the silicon oxide film is deposited on the top layer of the Low-E glass, the properties, such as acid and alkali corrosion resistance, oxidation resistance, heat and humidity resistance and high temperature resistance, of the functional glass are improved greatly.

The invention discloses the new typed nitride Co3N, Fe3N and Ni3N thin films to be used as anode materials of lithium ion batteries. Under nitrogen atmosphere, the thin films can be obtained through the reactive deposition of pulse lasers. The particle sizes are 20-500 nm presenting the polycrystal cube structure. The discharge platforms are appeared at about 0.64V, 0.70V and 0.92V when the battery consists of the said thin films as the electrode and metal lithium. Excellent reversibility of charging and discharging cycles is maintained at 3.50-0.01 V and current density 7 micron A/cm2. The specific capacities are at about 420, 440 and 420 mAh/g. after 80 times of cycle, the loss of reversible capacity is less than about 5%.

The invention relates to a preparation method of a Bi/Cu catalyst for artificial photosynthesis, which comprises the following steps of preparing an electrodeposition solution: adding bismuth chlorideBiCl3 and sodium citrate C6H9Na3O9 into a hydrochloric acid solution with the concentration of 1 mol/L or above, and sufficiently stirring the solution until the BiCl3 is completely dissolved and thesolution is transparent, thereby obtaining the electrodeposition solution, and electro-deposition reaction: forming a pair of electrodes by taking foamy copper as a cathode and a carbon rod as an anode, then immersing the electrodes into the prepared electrodeposition solution, carrying out constant-potential deposition reaction, and depositing 3-6 C charge quantity to obtain the Bi/Cu catalyst.Due to the fact that replacement reaction occurs under the acidic condition, Cu on the surface of the copper substrate is replaced into a solution and then deposited on the substrate again, and the coralline Bi/Cu catalyst with copper as a framework is formed. The Bi/Cu catalyst prepared through artificial photosynthesis has very high CO2 reduction selectivity.

A lithium secondary battery comprises a negative electrode containing lithium metal or a material previously storing lithium as an active material, a positive electrode containing a positive active material, and an electrolyte containing a non-aqueous electrolyte solution. The positive active material is a thin film formed by depositing on a substrate from vapor phase or liquid phase and including an oxide containing at least iron as a main constituent by a sputtering method, a reactive deposition method, a vacuum deposition method, a chemical vapor deposition method, a spraying method, a plating method, or a method in combination of these methods.

The invention belongs to the technical field of metal oxide coatings and discloses a method for low-temperature reactive sputtering deposition of a nanometer alpha-Al2O3 coating. The method comprisesthe following steps: manufacturing Al powder and alpha-Al2O3 powder into a composite material through a powder metallurgy method; after cutting the composite material to reach the size required for equipment, mounting the composite material of the required size on a target station for radio frequency magnetron sputtering as a deposition target material, and mounting a workpiece substrate on a sample table in a deposition cavity; after removing residual steam in the deposition cavity, vacuumizing to achieve base pressure, and then injecting a gas mixture of Ar and O2 for pre-oxidation treatment; and adjusting the partial pressure of O2 in the gas mixture of Ar and O2 to reach the range of 15% to 25%, adjusting the temperature of the workpiece substrate to reach the range of 550 DEG C to 750DEG C, starting a radio frequency magnetron sputtering film coating system, and starting reactive deposition so as to obtain the nanometer alpha-Al2O3 coating. The nanometer alpha-Al2O3 coating obtained through the method disclosed by the invention is of a nanocrystalline structure, is high in toughness, can be firmly combined with the workpiece substrate, and has a stable alpha-phase structure at relatively low temperature.

The invention relates to a method for preparing a tungsten skeleton coating on the surface of a carbon/carbon composite material through reactive deposition. According to the method, a SiC transition layer is prepared by adopting an embedding method, so that physical and chemical compatibility between the C/C composite material and W is improved, meanwhile, the interdiffusion between elemental C and elemental W is prevented, and the generation of a WC brittle phase is inhibited. A porous W coating is deposited on the surface of the C/C composite material by using a series of chemical reactions occurring in a closed alumina crucible, is uniform in pore size distribution and is applicable to the infiltration of a second phase at a later stage. The entire coating and a C/C composite material matrix are combined excellently. The surface reaction deposition method for the W coating can be used for achieving the preparation of the thin-wall W skeleton coating, and the disadvantages that the efficiency of vapor deposition is low and plasma spraying cannot be used for preparing coatings on complicated members are overcome. After the W skeleton coating is prepared on the surface of the C/C composite material through reactive deposition, a foundation for preparing tungsten infiltrated copper and tungsten infiltrated silver coatings on surfaces of C/C composite materials is laid.