26 results about "Reactive deposition" patented technology

The invention provides a metal-doped biomass carbon negative electrode material and a preparation method thereof.The preparation method comprises the steps that an acid activating agent is added into biomass powder for soaking, then a pore inducer is added for high-temperature activating treatment, and activated porous carbon is obtained; preparing a mixed metal salt solution, adding the activated porous carbon into the mixed metal salt solution, sequentially stirring and standing, and performing suction filtration and drying to obtain an intermediate; and putting the intermediate into a vapor deposition reaction cavity, heating under the protection of nitrogen, introducing a silicon source gas and a germanium source gas for a deposition reaction, and cooling after the deposition reaction is completed to obtain the metal-doped biomass carbon negative electrode material. According to the process, through collaborative integration of structural design and element functions, the comprehensive electrochemical performance of the metal-doped biomass carbon negative electrode material is remarkably improved, and the problem that a traditional doped material is insufficient in stability and capacity utilization rate is solved.

The invention discloses a preparation method and application of an H-Fe3O4 (at) C nanorod electrode material with a core-shell structure. Dissolving iron nitrate nonahydrate, urea, ammonium fluoride and other drugs in ultrapure water, immersing the carbon fiber cloth in the precursor solution, and carrying out a hydrothermal reaction; after the reaction is completed, cooling to room temperature, washing and sintering to obtain a Fe3O4 nanorod taking the carbon fiber cloth as the substrate; putting the Fe3O4 nanorod serving as a working electrode into a deposition solution of potassium chloride and a pyrrole monomer, and carrying out a constant-pressure deposition reaction; after deposition is completed, washing and sintering are carried out, and the Fe3O4 (at) C core-shell nanorod is obtained. And finally, carrying out rapid Joule heat treatment to further graphitize the carbon layer, cooling, and taking out to obtain the H-Fe3O4 (at) C nanorod. The H-Fe3O4 (at) C nanorod is used as a negative electrode to assemble the asymmetric supercapacitor, the capacitance retention rate of the supercapacitor is 93.7% after 25000 cycles of charge and discharge, the capacitance retention rate is far higher than that of most current pseudocapacitance supercapacitors, and the self-discharge rate of the capacitor is inhibited while good electrochemical stability is achieved.

A method for deposition of silicon and nitrogen containing dielectric film via an atomic layer deposition (ALD) or in an ALD-like process. The method includes the steps of a) providing at least one substrate into a reactor and heating the reactor to at least one temperature ranging from about 25° C. to about 600° C. and optionally maintaining the reactor at a pressure of about 100 torr or less; b) introducing into the reactor at least a first precursor comprising a halogenated silicon-containing compound that forms a silicon-containing layer; c) purging any unreacted precursor from the reactor using inert gas; d) introducing at least a second precursor, comprising at least two or more primary amino-containing silicon atoms, which reacts with the silicon-containing layer to form a film comprising silicon and nitrogen; e) purging the reactor using inert gas; f) introducing a plasma source into the reactor to react with the film comprising silicon and nitrogen; g) purging any reaction by-products from the reactor using inert gas, and repeating steps b to g to bring the film comprising silicon and nitrogen to a desired thickness.

The invention relates to the technical field of chemical vapor deposition equipment, and discloses novel chromium carbide coating equipment and method, and the equipment comprises a heating system, a reaction deposition system, a gas control system, a pressure control system, a gas stirring dispersion system and a chlorination reaction tank; the reaction deposition system comprises a reaction deposition chamber with a pressure detection assembly and a temperature detection assembly; a loading disc for loading workpieces is arranged in the reaction deposition chamber; the gas control system comprises at least two independent gas control pipelines; the gas stirring and dispersing system comprises a rotatable gas outlet rod and a rotating device for driving the gas outlet rod to rotate; the chlorination pipeline and the main gas pipeline are isolated through a sealing isolation part before entering the gas outlet rod; and the chlorination reaction tank is used for loading chromium particles and chlorinating the chromium particles to generate gaseous chromium chloride. According to the method, efficient, uniform and stable preparation of the high-performance chromium carbide coating can be achieved.

The invention provides CVD (Chemical Vapor Deposition) coating reaction heating deposition equipment which comprises a sectional heating furnace, a reaction deposition chamber arranged in the sectional heating furnace and a rotary air supply mechanism penetrating into the reaction deposition chamber, and a plurality of layers of workpiece carriers and a preheating chamber positioned at the bottom of the workpiece carriers are arranged in the reaction deposition chamber; the rotary air supply mechanism comprises a rotary air supply shaft which axially penetrates into the reaction deposition chamber and is in running fit with the reaction deposition chamber, an air supply pipe which axially penetrates through the workpiece carrier and is in running fit with the workpiece carrier, and a rotary driving part which is connected with the rotary air supply shaft and is used for driving the rotary air supply shaft to rotate; and the rotary air supply shaft is communicated with the air supply pipe through the preheating chamber. The deposition gas is conveyed to the reaction deposition chamber, the rotary gas supply system drives the gas supply pipe to rotate to uniformly inject the deposition gas into the deposition cavity, uniform and stable deposition gas is provided for a to-be-coated workpiece placed in the reaction deposition chamber, and the deposition effect is improved; and the temperature uniformity of the whole deposition chamber is ensured by heating the furnace body in sections and controlling and adjusting the temperature in sections.

The application provides a reference electrode of a three-electrode battery, a three-electrode battery and a vehicle. The reference electrode is provided with a diaphragm between a positive electrode of the three-electrode battery and a negative electrode of the three-electrode battery; the reference electrode comprises a copper-antimony composite material, and a lithium-containing compound is deposited on the surface of the reference electrode through an alloying reaction. Thus, lithium can be fixed on the surface of the reference electrode, lithium can be uniformly deposited on the surface of the reference electrode, and the lithium is not prone to reacting with an electrolyte in a subsequent cycle process, so that the lithium deposited on the surface of the reference electrode can be effectively prevented from being destroyed, and the reference electrode can have good structural stability and potential stability.

This invention discloses a thin-film transistor array substrate and its fabrication method. The thin-film transistor array substrate includes a thin-film transistor including a drain, a first passivation layer, and a planarization layer sequentially formed on a substrate. Contact holes are formed in the planarization layer at positions corresponding to the drain, exposing a portion of the surface of the first passivation layer. A common electrode and a protective layer are then formed on the planarization layer at intervals. The protective layer at least covers the sidewalls of the contact holes and exposes a portion of the surface of the first passivation layer at the bottom of the contact holes. In the thin-film transistor array substrate and its fabrication method provided by this invention, because the exposed surface of the planarization layer is covered by the protective layer, the planarization layer portion covered by the protective layer will not be damaged during etching of the second passivation layer, thus avoiding the formation of reactive deposits at the bottom of the contact holes and ensuring good connection between the pixel electrode and the drain.

This invention discloses a multiphase reactive deposition apparatus and a method for analyzing gallium oxide growth behavior. The method includes: meshing a pre-constructed three-dimensional geometric model of a horizontal reaction chamber to obtain a mesh file; importing the mesh file into fluid dynamics simulation software, setting boundary conditions, and obtaining a physical model; constructing a computational model based on the flow motion of gallium acetylacetonate droplets, vaporization phase transition, gas-phase oxidation reaction, and the deposition process of reaction products on the substrate surface; selecting a multiphase flow solver based on the physical and computational models; inputting material and control parameters into the multiphase flow solver to obtain simulation results; and obtaining α-Ga₂O₃ growth behavior analysis results based on the constructed multiphase reaction coupling model and simulation results. The multiphase reaction coupling model is used to calculate the mutual influence between physical fields. The method provided by this invention can predict gallium oxide growth behavior, providing support for optimizing deposition process parameters and improving thin film growth uniformity.

Methods of modifying properties of a cellulosic material include depositing an additive onto the cellulosic material, the additive being in a vapor phase and configured to modify one or more properties of the cellulosic material and adsorbing the additive into the cellulosic material, wherein the additive reacts with one or more functional groups of the cellulosic material. The depositing can be an atomic layer deposition of the additive onto the cellulosic material. The additive can be configured to react with a nucleophile in the cellulosic material. One or more properties of the cellulosic material can include hydrophobicity, thermal conductivity, thermal diffusivity, fungo-toxicity, toxicity, wettability, tensile strength, corrosiveness, biodegradability, bio-toxicity, or swelling.

The utility model relates to a kind of polyphenylamine optical fiber pH sensor automated preparation system, and a kind of pH sensor preparation device;To solve the problem of poor consistency and poor preparation efficiency in the preparation process of existing polyphenylamine optical fiber pH sensor;The novel includes three-axis motion control platform, film layer solidification unit, reaction deposition unit and control unit;Reaction deposition unit is used for the sensitive film layer deposition of the optical fiber of sensor;Film layer solidification unit is used for curing to sensitive film layer deposition;Control unit controls three-axis motion control platform to carry sensor in turn in reaction deposition unit and carries out sensitive film layer reaction deposition and in film layer solidification unit sensitive film layer solidification.The beneficial effect is to improve the purpose of preparation efficiency and consistency, reduce manual operation, improve experimental efficiency.

The invention relates to the technical field of chemical vapor deposition, and discloses equipment for forming a silicon carbide coating on the surface of a graphite product, the equipment comprises a gas supply assembly, the gas supply assembly comprises an outer shell, the inner part of the outer shell is coaxially sleeved with an inner shell, and two protection assemblies are arranged on the outer shell. And one ends of the two protection assemblies communicate with the space between the outer shell and the inner shell, and a movable assembly is movably connected between the outer shell and the inner shell in a sleeving mode. When the device works, reaction gas is conveyed into the inner shell through the gas supply pipe, and protective gas is conveyed into the outer shell through the first protective assembly, so that the reaction gas discharged from the inner shell is surrounded and protected by the protective gas discharged from the outer shell, and the contact between the reaction gas just discharged from the gas supply assembly and hot gas in the outer shell mechanism is reduced; the instantaneous heating effect of reaction gas is weakened, so that the situation that reaction deposition occurs at the exhaust port of the inner shell is reduced, and the probability that the exhaust port of the inner shell is blocked is reduced.

This invention discloses a superhydrophobic composite passivation film and its preparation method, belonging to the field of coating preparation technology. The invention involves sequentially forming a zirconium-based chemical conversion film and a fluorinated functionalized silica layer on a substrate surface to obtain the superhydrophobic composite passivation film. The zirconium-based chemical conversion film and the fluorinated functionalized silica layer are connected by Si-O-Zr or Si-O-Al covalent bonds. The zirconium-based chemical conversion film is obtained by deposition through dissociation coordination and interfacial redox reactions using fluorozirconate, fluoride, vanadate, and manganese nitrate as raw materials; the fluorinated functionalized silica layer is obtained by spraying nano-silica after fluorination and functionalization with perfluorosilane. This invention organically couples an inorganic passivation film with a superhydrophobic micro / nano structure, resulting in a superhydrophobic composite passivation film with a static water contact angle ≥150° and a static oil contact angle ≥150°, achieving dual repulsion of water and oil, and reducing the emission of volatile organic compounds during the preparation process.

This invention discloses an integrated preparation system and method for silicon-oxygen anode materials. The system includes a silicon monoxide generation device, a vaporization chamber, a reaction deposition chamber, and a graded discharge device connected in sequence. The silicon monoxide generation device is connected to an inert dilution gas source. The vaporization chamber is connected to a dopant supply device and a lithium source supply device. The head of the reaction deposition chamber is connected to a carbon source gas supply device, and the tail is connected to a vacuum pump. The preparation method includes preparing fumed silicon monoxide, fumed dopant, and fumed lithium source. Fumed silicon monoxide, fumed dopant, fumed lithium source, and fumed carbon source are fed into the reaction deposition chamber in a specific order using inert gas. Silicon monoxide deposition, doping, lithium replenishment, and carbon coating are completed in a specific order. After graded shaping, the silicon-oxygen anode material is obtained. This invention integrates silicon monoxide preparation, fumed doping, carbon coating, and lithium replenishment processes, reducing equipment investment and energy consumption, and ensuring the uniformity and consistency of doping, lithium replenishment, and carbon coating.

The invention belongs to the technical field of semiconductor material preparation, and provides a method for preparing boron-phosphorosilicate glass through SACVD, and the method comprises the following steps: placing a wafer on a heating plate of an SACVD device for heating, introducing reaction shielding gas into the SACVD device until the reaction pressure is reached, and keeping a stable state; introducing the gaseous reaction source into a tail gas treatment unit of the SACVD device and keeping a stable state; introducing a gaseous reaction source and an oxygen source into a reaction chamber of the SACVD device, and carrying out a deposition reaction in a state that the reaction pressure is stable and the gaseous reaction source is stable; after the deposition reaction is completed, a gaseous reaction source is introduced into a tail gas treatment unit of the SACVD device, the reaction is ended, and the boron-phosphorosilicate glass is obtained. The method provided by the invention solves the problem of transient instability of the starting / ending stage in the SACVD process, and further improves the stability of the prepared boron-phosphorosilicate glass.

The present invention discloses a method for producing high-purity granular silicon. By adjusting the reaction deposition temperature of a fluidized bed and the concentration of silicon-containing gas, a temperature layer and a concentration layer are formed on the inner wall of the fluidized bed. When silicon is deposited on the inner wall of a graphite inner component to a certain thickness, resulting in a temperature difference, the stress is reduced or weakened by the temperature layer and the concentration layer, thereby preventing the graphite inner component on the inner wall of the fluidized bed from being directly damaged when the stress is released. The stress of the silicon deposited on the surface of the inner wall of the fluidized bed is dispersed through the formation of the temperature layer and the concentration layer, which is conducive to extending the continuous operation time of the fluidized bed, avoiding reduction in product quality and / or shutdown for maintenance and overhaul due to rupture of the graphite components, thereby achieving long-term stable operation of the fluidized bed and extending the operation cycle of the fluidized bed.

Examples are disclosed that relate to etching carbon-containing films using an etching agent and a carbon-containing film precursor. This helps to etch the carbon-containing film at a higher rate on a field region of the substrate than within a feature. One example provides, on a substrate comprising a feature and a field region adjacent to the feature, a method of etching a carbon film deposited on the field region and within the feature. The method comprises forming a plasma using a gas mixture comprising an etching agent and a carbon-containing film precursor to generate reactive etching species and reactive deposition species. The method further comprises etching the carbon film at a higher rate in the field region than within the feature by depositing carbon within the feature during etching.

The application relates to the technical field of chemical vapor deposition, and discloses a device for forming a silicon carbide coating on the surface of a graphite product, which comprises a gas feeding assembly, and the gas feeding assembly comprises an outer shell, the inside of the outer shell is coaxially sleeved with an inner shell, two protection assemblies are arranged on the outer shell, one end of each of the two protection assemblies is communicated with the space between the outer shell and the inner shell, and a movable assembly is movably sleeved between the outer shell and the inner shell. When the device works, reaction gas is transported into the inner shell through a gas feeding pipe, and protective gas is transported into the outer shell through the first protection assembly, so that the reaction gas discharged from the inner shell is surrounded and protected by the protective gas discharged from the outer shell, the contact between the reaction gas just discharged from the gas feeding assembly and the hot gas in the outer shell is reduced, the instantaneous heating effect of the reaction gas is weakened, the reaction deposition phenomenon of the exhaust port of the inner shell is reduced, and the plugging probability of the exhaust port of the inner shell is reduced.

This invention discloses the preparation of phase change microcapsules with energy storage and photothermal conversion properties and their application in thermal insulation coatings. It relates to the field of microencapsulated phase change materials technology, including core-shell structured microcapsules prepared with organic phase change materials as the core and copper silicate as the shell, with a core-to-shell mass ratio of 1:0.5–1.5. This invention employs an in-situ interfacial reaction deposition method, constructing an oil-water two-phase emulsion template, and with the assistance of an emulsifier, allowing inorganic precursors to undergo a chemical precipitation reaction at the interface to form a continuous and dense inorganic copper silicate shell. These microcapsules not only utilize phase change materials such as paraffin to achieve high-density thermal energy storage, but also leverage the efficient photothermal conversion and photocatalytic degradation characteristics of the copper silicate shell to achieve an integrated design of photothermal conversion, anti-pollution, and thermal energy storage. These phase change microcapsules exhibit excellent temperature buffering and energy storage performance, demonstrating a good thermal barrier effect and active thermal regulation capability in coatings, and have broad application prospects in building energy conservation, solar thermal collection, and thermal protection.

The present invention discloses an amorphous molybdenum-doped tungsten oxide electrochromic material and a preparation method thereof. The method comprises the following steps: making the pre-vacuum degree of the magnetron sputtering coating instrument reach 2*10 ‑4 Pa below, and in an argon-oxygen mixed atmosphere, an amorphous molybdenum-doped WO3 target is sputtered by radio frequency reactive deposition onto a conductive glass substrate to produce a Mo-doped WO3 thin film. The Mo-doped WO3 thin film is then annealed to produce an amorphous molybdenum-doped tungsten oxide electrochromic material. The present invention exhibits high transmittance in the faded state and low transmittance in the tinted state, achieving a contrast ratio of 56.6% to 72.8%. It can reversibly switch between transparent and gray-black at different voltages, demonstrating chromaticity changes during the tungsten oxide film's color change process. It can be applied to a variety of applications, including electrochromic smart windows, anti-glare rearview mirrors, and sunroofs for new energy vehicles.

The application discloses a preparation method of a p-n homojunction cuprous oxide (Cu2O) glucose photoelectrochemical sensing electrode. In the photoelectrochemical three-electrode system, the working electrode is composed of a 1cm*3cm ITO substrate, the counter electrode is a platinum sheet electrode, and the saturated calomel electrode (SCE) is the reference electrode. Before use, all the ITO substrates are cleaned in acetone for 20 minutes, cleaned in ethanol for 20 minutes, and cleaned in deionized water for 20 minutes. The cuprous oxide (Cu2O) p-n homojunction film is deposited by using an aqueous solution containing 0.1M copper sulfate (CuSO4.5H2O) and 1.4M sodium lactate (C3H5O3Na) as a synthesis agent, the deposition solution is adjusted to pH=11 by NaOH, the potential of the solution relative to the SCE is set to-0.4V by using an electrochemical workstation, the deposition time is 1800s, the reaction deposition temperature is 30 DEG C, and thus the p-n homojunction cuprous oxide (Cu2O) glucose photoelectrochemical sensing electrode is obtained. 2+ The p-n homojunction cuprous oxide (Cu2O) glucose photoelectrochemical sensing electrode used in the application retains the high selectivity and high resistance to reduction of the p-type material as a photo-cathode electrode, and meanwhile, the p-n junction is modified by self-doping to improve the photoelectrochemical response of the electrode and enhance the signal strength. The application has the advantages of simple operation, safe and reliable reaction, low requirement on equipment, low cost of raw materials, and wide application.

The application provides a metal-doped biomass carbon negative electrode material and a preparation method thereof, wherein the preparation method comprises the following steps: soaking biomass powder in an acidic activator, adding a pore inducer, and performing high-temperature activation treatment to obtain activated porous carbon; a mixed metal salt solution is prepared, the activated porous carbon is added into the mixed metal salt solution, and stirring and standing are sequentially performed; after being dried through suction filtration, an intermediate is obtained; the intermediate is placed into a gas-phase deposition reaction cavity, heating is performed under the protection of nitrogen, a silicon source gas and a germanium source gas are introduced to perform a deposition reaction, and the metal-doped biomass carbon negative electrode material is obtained after cooling. Through structural design and element function synergistic integration, the comprehensive electrochemical performance of the metal-doped biomass carbon negative electrode material is significantly improved, and the problems of insufficient stability and capacity utilization rate of traditional doped materials are overcome.

The invention relates to a method for preparing a metal rhenium coating by taking carbon tetrachloride as a chlorine source, which comprises the following steps: S1, under the conditions of 5-50kPa and 700-900 DEG C, introducing mixed gas of carbon tetrachloride and argon into raw material rhenium powder, and reacting to obtain rhenium pentachloride; and S2, the rhenium pentachloride obtained in the step S1 reacts under the conditions that the pressure is 5-50 kPa and the temperature is 1000-1300 DEG C, the rhenium pentachloride is deposited on a workpiece, the temperature is reduced to the room temperature, and the metal rhenium coating is obtained. The metal rhenium coating is good in compactness.

An effective device for realizing silicon doping in diamond, using an MPCVD system, including a gas control module, a microwave module and a reaction deposition module including a reaction chamber; the reaction deposition module includes a quartz window, a reaction chamber, a sample table and a sample holder, the microwave enters the reaction chamber through the quartz window, and the sample holder is placed on the sample table in the reaction chamber; the sample holder is in the shape of a cylinder, there is a gas inlet ring around the sample holder for gas to enter from below, the center of the sample holder with a hole has a through hole with a diameter of 2mm for gas to enter from below, there is an inclined surface around the through hole of the sample holder, the inclined surface has different angles with the horizontal surface of 0-90°, the angle of the substrate is changed, and different angle deposition growth is carried out; methane and nitrogen are introduced into the chamber from below through the through hole of the sample holder, the temperature is between 760-780℃, and a nitrogen-silicon doped diamond film with gradient distribution is prepared.

The invention belongs to the technical field of surface modification of solid electrolyte materials, and relates to a method for forming an interface layer on the surface of garnet electrolyte by removing lithium carbonate in situ, which comprises the following steps: 1, substrate pretreatment: selecting a garnet type solid electrolyte substrate with a Li2CO3 impurity layer on the surface, cleaning and drying; 2, a metal oxide film is deposited through magnetron sputtering, specifically, the pretreated base material is subjected to reactive deposition in oxygen or oxygen / argon mixed atmosphere through a metal target material to form an oxide film, the oxide film is a non-lithiated metal oxide, and the oxide film covers the surface of the base material; 3, heat treatment induced in-situ solid-solid reaction: carrying out heat treatment on the deposited matrix material to generate lithiated transition metal oxide; in the heat treatment process, the deposited oxide is promoted to react with Li2CO3 on the surface to generate a lithium compound interface layer with lithium affinity, the dual functions of impurity removal and conduction layer construction are achieved, and the interface functionalization level is remarkably improved.

A method for the reactive deposition of crystalline, aluminum-polar or nitrogen-polar layers containing or consisting of AlN onto a foreign substrate is provided. In this method, a magnetron sputtering unit is provided, the foreign substrate is heated to a temperature of < 800 °C, a pulsed electrical voltage with a duty cycle of <1 is applied between a magnetron and the foreign substrate, and the magnitude of the applied pulsed electrical voltage, the duty cycle, and / or the amount of nitrogenous gas supplied to the vacuum chamber from a gas source are regulated based on the concentration of aluminum and nitrogen atoms in the vacuum chamber, determined by a detector, such that a metallic operating point or a reactive operating point is established.Furthermore, a system is provided that is configured for the reactive deposition of crystalline, aluminium-polar or nitrogen-polar layers containing or consisting of AlN onto a foreign substrate.

The PECVD equipment comprises a shell, a gas source, an upper polar plate, a lower polar plate and a mask plate, a reaction cavity is formed in the shell, the gas source is connected to the shell and conveys process gas to the reaction cavity, the upper polar plate is arranged in the reaction cavity and used for being connected with a radio frequency source, the lower polar plate is arranged in the reaction cavity and used for being connected with a radio frequency source, and the mask plate is arranged in the reaction cavity and used for being connected with the radio frequency source. The mask plate is used for being grounded and supporting a substrate to be reacted, the mask plate is used for being placed on the surface of the substrate, and the mask plate is provided with a digging hole used for forming a specific packaging shape in the surface of the substrate. The mask plate disclosed by the invention can be used for manufacturing physical shielding in a non-reaction area, so that process gas is only subjected to reaction deposition in a hole digging area and does not react in other areas. Therefore, the packaging area in a specific shape can be formed on the surface of the substrate, the process of photoresist coating-photoetching is not needed, the process time is shortened by reducing the operation process, and the yield and the production efficiency are improved.