42 results about "Reactive deposition" patented technology

The invention discloses a post-processing method for improving a high-pressure impact damage threshold of a sapphire optical element, which comprises the following steps: exposing and passivating subsurface defects through high-temperature chemical corrosion reaction, and removing insoluble reaction sediments through phosphoric acid reaction at high temperature; afterwards, removing redundant acidic materials through a NaOH solution assisted by multi-frequency ultrasonic wave alternate multiplexing; and finally, rinsing through high-purity water and a surfactant assisted by multi-frequency ultrasonic wave alternate multiplexing. The sapphire optical element can be globally treated, a deposition layer is removed and scratches and pits in a subsurface layer are exposed through corrosion treatment of a mixed solution of sulfuric acid and phosphoric acid in a specific proportion at a high temperature and phosphoric acid dissolution, and sharp shapes in the scratches are effectively passivated, so that the sapphire high-pressure impact damage threshold value is effectively increased.

The invention provides a metal-doped biomass carbon negative electrode material and a preparation method thereof.The preparation method comprises the steps that an acid activating agent is added into biomass powder for soaking, then a pore inducer is added for high-temperature activating treatment, and activated porous carbon is obtained; preparing a mixed metal salt solution, adding the activated porous carbon into the mixed metal salt solution, sequentially stirring and standing, and performing suction filtration and drying to obtain an intermediate; and putting the intermediate into a vapor deposition reaction cavity, heating under the protection of nitrogen, introducing a silicon source gas and a germanium source gas for a deposition reaction, and cooling after the deposition reaction is completed to obtain the metal-doped biomass carbon negative electrode material. According to the process, through collaborative integration of structural design and element functions, the comprehensive electrochemical performance of the metal-doped biomass carbon negative electrode material is remarkably improved, and the problem that a traditional doped material is insufficient in stability and capacity utilization rate is solved.

The invention discloses a preparation method and application of an H-Fe3O4 (at) C nanorod electrode material with a core-shell structure. Dissolving iron nitrate nonahydrate, urea, ammonium fluoride and other drugs in ultrapure water, immersing the carbon fiber cloth in the precursor solution, and carrying out a hydrothermal reaction; after the reaction is completed, cooling to room temperature, washing and sintering to obtain a Fe3O4 nanorod taking the carbon fiber cloth as the substrate; putting the Fe3O4 nanorod serving as a working electrode into a deposition solution of potassium chloride and a pyrrole monomer, and carrying out a constant-pressure deposition reaction; after deposition is completed, washing and sintering are carried out, and the Fe3O4 (at) C core-shell nanorod is obtained. And finally, carrying out rapid Joule heat treatment to further graphitize the carbon layer, cooling, and taking out to obtain the H-Fe3O4 (at) C nanorod. The H-Fe3O4 (at) C nanorod is used as a negative electrode to assemble the asymmetric supercapacitor, the capacitance retention rate of the supercapacitor is 93.7% after 25000 cycles of charge and discharge, the capacitance retention rate is far higher than that of most current pseudocapacitance supercapacitors, and the self-discharge rate of the capacitor is inhibited while good electrochemical stability is achieved.

A method for deposition of silicon and nitrogen containing dielectric film via an atomic layer deposition (ALD) or in an ALD-like process. The method includes the steps of a) providing at least one substrate into a reactor and heating the reactor to at least one temperature ranging from about 25° C. to about 600° C. and optionally maintaining the reactor at a pressure of about 100 torr or less; b) introducing into the reactor at least a first precursor comprising a halogenated silicon-containing compound that forms a silicon-containing layer; c) purging any unreacted precursor from the reactor using inert gas; d) introducing at least a second precursor, comprising at least two or more primary amino-containing silicon atoms, which reacts with the silicon-containing layer to form a film comprising silicon and nitrogen; e) purging the reactor using inert gas; f) introducing a plasma source into the reactor to react with the film comprising silicon and nitrogen; g) purging any reaction by-products from the reactor using inert gas, and repeating steps b to g to bring the film comprising silicon and nitrogen to a desired thickness.

The technology of the present disclosure generally relates to the field of semiconductor devices. More particularly, semiconductor structures, systems, and methods for producing the same, comprising surface-modified silicon layers formed by reacting a deposited silicon layer with a halide reactant. The system comprising one or more reaction chamber constructed and arranged to hold a substrate; a silicon precursor vessel constructed and arranged to contain and evaporate a silicon precursor; a halide reactant vessel constructed and arranged to contain and evaporate a halide reactant; an exhaust source; and a controller; wherein the controller is configured to control the flow of said silicon precursor and said halide reactant into said reaction chamber, thereby forming a surface-modified silicon layer on said substrate.

The invention relates to the technical field of chemical vapor deposition equipment, and discloses novel chromium carbide coating equipment and method, and the equipment comprises a heating system, a reaction deposition system, a gas control system, a pressure control system, a gas stirring dispersion system and a chlorination reaction tank; the reaction deposition system comprises a reaction deposition chamber with a pressure detection assembly and a temperature detection assembly; a loading disc for loading workpieces is arranged in the reaction deposition chamber; the gas control system comprises at least two independent gas control pipelines; the gas stirring and dispersing system comprises a rotatable gas outlet rod and a rotating device for driving the gas outlet rod to rotate; the chlorination pipeline and the main gas pipeline are isolated through a sealing isolation part before entering the gas outlet rod; and the chlorination reaction tank is used for loading chromium particles and chlorinating the chromium particles to generate gaseous chromium chloride. According to the method, efficient, uniform and stable preparation of the high-performance chromium carbide coating can be achieved.

The present invention relates to a hydrophilic polydopamine / ionic liquid coating resistant to acids and alkalis, which is prepared by depositing on the surface of a substrate material through the Michael addition reaction or Schiff base reaction of polydopamine (PDA) and ionic liquid (IL). The PDA / IL coating has a certain universality and can be deposited on the surfaces of different polymers or metal sheets. The PDA / IL coating can improve the hydrophilicity of the substrate material surface, and while enhancing the acid and alkali resistance of the coating, it also enhances the antibacterial and antifouling capabilities of the coating. The preparation method of the present invention has a simple process, is easy to operate, has mild conditions and strong universality.

The present invention relates to the technical field of semiconductor glass passivation, in particular to a glass passivation process for mesa semiconductor devices, including S1: Loading the carrier wafer, the semiconductor device is placed into the heating furnace of the chemical vapor deposition equipment, and then the heating furnace is closed; S2: Depositing the passivation layer, starting the heating furnace, when the temperature of the heating furnace reaches the set value, inputting reaction gases into the heating furnace for reaction deposition; S3: Residual gas replacement, inputting inert gas to replace the residual reaction gases in the heating furnace; S4: Annealing treatment, heating the deposited semiconductor device to a relatively high temperature, then maintaining for a period of time, and then cooling at an appropriate speed; S5: Taking out the carrier wafer. The present invention solves the problem that after the deposition step in the glass passivation process of semiconductor devices, using the vacuum pumping method to clean the residual gases in the heating furnace will affect the quality and stability of the passivation layer, while using the inert gas replacement method has high cost and low efficiency.

The invention provides CVD (Chemical Vapor Deposition) coating reaction heating deposition equipment which comprises a sectional heating furnace, a reaction deposition chamber arranged in the sectional heating furnace and a rotary air supply mechanism penetrating into the reaction deposition chamber, and a plurality of layers of workpiece carriers and a preheating chamber positioned at the bottom of the workpiece carriers are arranged in the reaction deposition chamber; the rotary air supply mechanism comprises a rotary air supply shaft which axially penetrates into the reaction deposition chamber and is in running fit with the reaction deposition chamber, an air supply pipe which axially penetrates through the workpiece carrier and is in running fit with the workpiece carrier, and a rotary driving part which is connected with the rotary air supply shaft and is used for driving the rotary air supply shaft to rotate; and the rotary air supply shaft is communicated with the air supply pipe through the preheating chamber. The deposition gas is conveyed to the reaction deposition chamber, the rotary gas supply system drives the gas supply pipe to rotate to uniformly inject the deposition gas into the deposition cavity, uniform and stable deposition gas is provided for a to-be-coated workpiece placed in the reaction deposition chamber, and the deposition effect is improved; and the temperature uniformity of the whole deposition chamber is ensured by heating the furnace body in sections and controlling and adjusting the temperature in sections.

The application provides a reference electrode of a three-electrode battery, a three-electrode battery and a vehicle. The reference electrode is provided with a diaphragm between a positive electrode of the three-electrode battery and a negative electrode of the three-electrode battery; the reference electrode comprises a copper-antimony composite material, and a lithium-containing compound is deposited on the surface of the reference electrode through an alloying reaction. Thus, lithium can be fixed on the surface of the reference electrode, lithium can be uniformly deposited on the surface of the reference electrode, and the lithium is not prone to reacting with an electrolyte in a subsequent cycle process, so that the lithium deposited on the surface of the reference electrode can be effectively prevented from being destroyed, and the reference electrode can have good structural stability and potential stability.

To provide a method for producing SiOx and carbon composite structure nanofibers observed as a material replaced with the conventional SiC fiber material.SOLUTION: A method for producing SiOx / carbon nanofibers sequentially implementes reactions of: cleaning a Si substrate 1 to insert the Si substrate into a thermal CVD device and forming a phosphorus thin film layer 2 on the Si substrate while atomizing a phosphorus / ethanol mixed liquid in a temperature range of 900-1000°C by a nebulizer device (I); causing a fusion reaction with Si to form a phosphorus-Si mixed liquid layer 3 (II); and rapidly forming the surface of the Si-phosphorus fusion liquid layer in a supersaturation state and depositing and growing SiOx / carbon nano fibers through the oxidation reaction of Si+O2→SiOx and depositing even an amorphous carbon layer 4 simultaneously deposited from ethanol on the outside of a SiOx core 5 (III).SELECTED DRAWING: Figure 2

The present invention relates to the technical field of data processing, and particularly relates to a method for monitoring data of a methyl methacrylate production environment; obtaining abnormal change points according to the data difference characteristics of a historical temperature time series; obtaining reaction deposition characteristic values according to the temperature difference characteristics of adjacent abnormal change points; judging whether the abnormal change points are deposition characteristic points according to the reaction deposition characteristic values; obtaining a temperature fluctuation sequence according to all the deposition characteristic points; obtaining a deposition change degree value according to the similarity characteristics between the temperature fluctuation sequence and a preset ascending sequence. The present invention obtains an adaptive lag coefficient weight of the abnormal change points according to the deposition change degree value and the reaction deposition characteristic values; predicts the temperature according to an ARIMA prediction model including the adaptive lag coefficient weight; monitors the production process according to the predicted temperature, avoids the influence of the solid catalyst deposition phenomenon on temperature monitoring, and improves the accuracy of temperature monitoring.

This invention discloses a thin-film transistor array substrate and its fabrication method. The thin-film transistor array substrate includes a thin-film transistor including a drain, a first passivation layer, and a planarization layer sequentially formed on a substrate. Contact holes are formed in the planarization layer at positions corresponding to the drain, exposing a portion of the surface of the first passivation layer. A common electrode and a protective layer are then formed on the planarization layer at intervals. The protective layer at least covers the sidewalls of the contact holes and exposes a portion of the surface of the first passivation layer at the bottom of the contact holes. In the thin-film transistor array substrate and its fabrication method provided by this invention, because the exposed surface of the planarization layer is covered by the protective layer, the planarization layer portion covered by the protective layer will not be damaged during etching of the second passivation layer, thus avoiding the formation of reactive deposits at the bottom of the contact holes and ensuring good connection between the pixel electrode and the drain.

This invention discloses a multiphase reactive deposition apparatus and a method for analyzing gallium oxide growth behavior. The method includes: meshing a pre-constructed three-dimensional geometric model of a horizontal reaction chamber to obtain a mesh file; importing the mesh file into fluid dynamics simulation software, setting boundary conditions, and obtaining a physical model; constructing a computational model based on the flow motion of gallium acetylacetonate droplets, vaporization phase transition, gas-phase oxidation reaction, and the deposition process of reaction products on the substrate surface; selecting a multiphase flow solver based on the physical and computational models; inputting material and control parameters into the multiphase flow solver to obtain simulation results; and obtaining α-Ga₂O₃ growth behavior analysis results based on the constructed multiphase reaction coupling model and simulation results. The multiphase reaction coupling model is used to calculate the mutual influence between physical fields. The method provided by this invention can predict gallium oxide growth behavior, providing support for optimizing deposition process parameters and improving thin film growth uniformity.

Methods of modifying properties of a cellulosic material include depositing an additive onto the cellulosic material, the additive being in a vapor phase and configured to modify one or more properties of the cellulosic material and adsorbing the additive into the cellulosic material, wherein the additive reacts with one or more functional groups of the cellulosic material. The depositing can be an atomic layer deposition of the additive onto the cellulosic material. The additive can be configured to react with a nucleophile in the cellulosic material. One or more properties of the cellulosic material can include hydrophobicity, thermal conductivity, thermal diffusivity, fungo-toxicity, toxicity, wettability, tensile strength, corrosiveness, biodegradability, bio-toxicity, or swelling.

The present invention relates to an air inlet structure of a chemical vapor deposition device and a chemical vapor deposition device. The air inlet structure includes: a second intake pipe and a first intake pipe. The second intake pipe is arranged around the first intake pipe, so that the introduced protective gas surrounds the introduced gas to be reacted. Through the air inlet structure and the chemical vapor deposition device of the present invention, on the one hand, the introduction of the protective gas can keep the gas at the outlet end of the first intake pipe at a slightly positive pressure compared to the inside of the reaction chamber, reducing the situation that the deposited atoms inside the reaction chamber diffuse to the reaction deposition at the outlet end of the first intake pipe, and significantly reducing the blockage probability of the outlet end of the first intake pipe; on the other hand, the protective gas can evenly wrap the reaction gas inside, avoiding the rapid diffusion of the reaction gas and reacting to form solid particles before reaching the substrate position, resulting in the problem of uneven growth of the material film layer.

The utility model relates to a kind of polyphenylamine optical fiber pH sensor automated preparation system, and a kind of pH sensor preparation device;To solve the problem of poor consistency and poor preparation efficiency in the preparation process of existing polyphenylamine optical fiber pH sensor;The novel includes three-axis motion control platform, film layer solidification unit, reaction deposition unit and control unit;Reaction deposition unit is used for the sensitive film layer deposition of the optical fiber of sensor;Film layer solidification unit is used for curing to sensitive film layer deposition;Control unit controls three-axis motion control platform to carry sensor in turn in reaction deposition unit and carries out sensitive film layer reaction deposition and in film layer solidification unit sensitive film layer solidification.The beneficial effect is to improve the purpose of preparation efficiency and consistency, reduce manual operation, improve experimental efficiency.

The invention relates to the technical field of chemical vapor deposition, and discloses equipment for forming a silicon carbide coating on the surface of a graphite product, the equipment comprises a gas supply assembly, the gas supply assembly comprises an outer shell, the inner part of the outer shell is coaxially sleeved with an inner shell, and two protection assemblies are arranged on the outer shell. And one ends of the two protection assemblies communicate with the space between the outer shell and the inner shell, and a movable assembly is movably connected between the outer shell and the inner shell in a sleeving mode. When the device works, reaction gas is conveyed into the inner shell through the gas supply pipe, and protective gas is conveyed into the outer shell through the first protective assembly, so that the reaction gas discharged from the inner shell is surrounded and protected by the protective gas discharged from the outer shell, and the contact between the reaction gas just discharged from the gas supply assembly and hot gas in the outer shell mechanism is reduced; the instantaneous heating effect of reaction gas is weakened, so that the situation that reaction deposition occurs at the exhaust port of the inner shell is reduced, and the probability that the exhaust port of the inner shell is blocked is reduced.

This invention discloses a superhydrophobic composite passivation film and its preparation method, belonging to the field of coating preparation technology. The invention involves sequentially forming a zirconium-based chemical conversion film and a fluorinated functionalized silica layer on a substrate surface to obtain the superhydrophobic composite passivation film. The zirconium-based chemical conversion film and the fluorinated functionalized silica layer are connected by Si-O-Zr or Si-O-Al covalent bonds. The zirconium-based chemical conversion film is obtained by deposition through dissociation coordination and interfacial redox reactions using fluorozirconate, fluoride, vanadate, and manganese nitrate as raw materials; the fluorinated functionalized silica layer is obtained by spraying nano-silica after fluorination and functionalization with perfluorosilane. This invention organically couples an inorganic passivation film with a superhydrophobic micro / nano structure, resulting in a superhydrophobic composite passivation film with a static water contact angle ≥150° and a static oil contact angle ≥150°, achieving dual repulsion of water and oil, and reducing the emission of volatile organic compounds during the preparation process.

The invention belongs to the technical field of thin film preparation, and particularly relates to a method for preparing a metal sulfide thin film material through magnetron reactive sputtering at room temperature. The preparation method comprises the following steps: taking a metal target material with good heat conduction and electric conduction and elemental sulfur as raw materials, keeping a substrate at room temperature, heating and evaporating sulfur powder by adopting a resistor to form sulfur steam, and then reacting and depositing on the substrate by adopting a magnetron sputtering metal target material to obtain the metal sulfide film. Before formal sputtering deposition, a metal target material is subjected to pre-sputtering for more than or equal to 5 min, a substrate baffle is opened after pre-sputtering is finished, the formal sputtering metal target material is subjected to reaction deposition to obtain the metal sulfide film, the formal sputtering time is 5-60 min, the pre-sputtering power and the formal sputtering air pressure are the same, the power is 60-150 W, and the sputtering air pressure is 2.8-5 Pa. The method has the advantages of low raw material cost, no cracking in the target sputtering process, high deposition rate, avoidance of use of highly toxic gas H2S, room-temperature deposition, no need of annealing, simple operation and good repeatability.

A method of depositing a silicon and nitrogen containing dielectric film by an atomic layer deposition (ALD) or ALD-like process. The method comprises the steps of: a) providing at least one substrate into a reactor and heating the reactor to at least one temperature in the range of about 25 DEG C to about 600 DEG C, and optionally maintaining the reactor at a pressure of about 100 torr or less; b) introducing at least a first silicon precursor comprising a halogenated silicon-containing compound forming the silicon-containing layer into the reactor; c) purging any unreacted precursor from the reactor with an inert gas; d) introducing at least a second silicon precursor comprising at least two or more primary amino-containing silicon atoms, which reacts with the silicon-containing layer to form a film comprising silicon and nitrogen; e) purging the reactor with an inert gas; f) introducing a plasma source into the reactor to react with the membrane comprising silicon and nitrogen; g) purging any reaction by-products from the reactor with an inert gas and repeating steps b to g so that the film comprising silicon and nitrogen reaches the desired thickness.

A method for producing coated substrates involving deposition of at least one coating layer on a surface of the substrate. The coating layer is synthesized in the interior of a vacuum coating chamber by using reactive PVD cathodic evaporation techniques. Nitrogen gas is introduced in the vacuum coating chamber to be used as reactive gas, and at least one arc evaporation source comprising a target material operated as cathode for evaporating the target material is used. The method involves a reactive deposition of aluminium titanium nitride as a result of a reaction between aluminium and titan from the target material with nitrogen from the nitrogen gas comprised in the coating chamber.

The invention relates to the technical field of data processing, in particular to a methyl methacrylate production environment data monitoring method. Obtaining an abnormal change point according to the data difference characteristics of the historical temperature time sequence; obtaining a reaction deposition characteristic value according to the temperature difference characteristic of the adjacent abnormal change points; judging whether the abnormal change point is a deposition feature point or not according to the reaction deposition feature value; obtaining a temperature fluctuation sequence according to all the deposition feature points; and obtaining a deposition change degree value according to similar characteristics of the temperature fluctuation sequence and a preset ascending sequence. According to the deposition change degree value and the reaction deposition characteristic value, the self-adaptive lag coefficient weight of the abnormal change point is obtained; the temperature is predicted according to the ARIMA prediction model containing the self-adaptive lag coefficient weight; and the production process is monitored according to the predicted temperature, so that the influence of a solid catalyst deposition phenomenon on temperature monitoring is avoided, and the accuracy of temperature monitoring is improved.

The invention relates to the technical field of light-emitting diodes, in particular to a preparation method of a light-emitting diode with an inverted structure. Before ALD deposition of AL2O3, N2, N2O or O3 plasma is used for cleaning the GAN surface, improving the cleanliness of the GAN MESA side face and eliminating residual ions and groups on the side face, then TMAL and H2O are used for reacting to deposit a thin film, and the problem that the starting voltage of 1 ua small current is low is solved; aLD deposition of AL2O3 is carried out, TMAL and O3 are cyclically used as reaction sources in the first 10-100 pulses, the problems of-OH groups and charge residues on interfaces of GAN and AL2O3 are solved, TMAL and H2O are used for reaction in subsequent film forming, the problem of low starting voltage of 1ua small current is solved, and the production cost and efficiency are guaranteed; tMAL and H2O are used for reacting to deposit AL2O3, the whole film layer is divided into 2-10 sections, N2 or N2O plasma is used between the two sections for cleaning, residual ions and charges on interfaces of AL2O3 and GAN and residual ions in the film layer due to insufficient reaction are eliminated, and the problem of low turn-on voltage of 1ua small current is solved.

This invention discloses an integrated preparation system and method for silicon-oxygen anode materials. The system includes a silicon monoxide generation device, a vaporization chamber, a reaction deposition chamber, and a graded discharge device connected in sequence. The silicon monoxide generation device is connected to an inert dilution gas source. The vaporization chamber is connected to a dopant supply device and a lithium source supply device. The head of the reaction deposition chamber is connected to a carbon source gas supply device, and the tail is connected to a vacuum pump. The preparation method includes preparing fumed silicon monoxide, fumed dopant, and fumed lithium source. Fumed silicon monoxide, fumed dopant, fumed lithium source, and fumed carbon source are fed into the reaction deposition chamber in a specific order using inert gas. Silicon monoxide deposition, doping, lithium replenishment, and carbon coating are completed in a specific order. After graded shaping, the silicon-oxygen anode material is obtained. This invention integrates silicon monoxide preparation, fumed doping, carbon coating, and lithium replenishment processes, reducing equipment investment and energy consumption, and ensuring the uniformity and consistency of doping, lithium replenishment, and carbon coating.

The invention belongs to the technical field of semiconductor material preparation, and provides a method for preparing boron-phosphorosilicate glass through SACVD, and the method comprises the following steps: placing a wafer on a heating plate of an SACVD device for heating, introducing reaction shielding gas into the SACVD device until the reaction pressure is reached, and keeping a stable state; introducing the gaseous reaction source into a tail gas treatment unit of the SACVD device and keeping a stable state; introducing a gaseous reaction source and an oxygen source into a reaction chamber of the SACVD device, and carrying out a deposition reaction in a state that the reaction pressure is stable and the gaseous reaction source is stable; after the deposition reaction is completed, a gaseous reaction source is introduced into a tail gas treatment unit of the SACVD device, the reaction is ended, and the boron-phosphorosilicate glass is obtained. The method provided by the invention solves the problem of transient instability of the starting / ending stage in the SACVD process, and further improves the stability of the prepared boron-phosphorosilicate glass.

The present invention discloses a method for producing high-purity granular silicon. By adjusting the reaction deposition temperature of a fluidized bed and the concentration of silicon-containing gas, a temperature layer and a concentration layer are formed on the inner wall of the fluidized bed. When silicon is deposited on the inner wall of a graphite inner component to a certain thickness, resulting in a temperature difference, the stress is reduced or weakened by the temperature layer and the concentration layer, thereby preventing the graphite inner component on the inner wall of the fluidized bed from being directly damaged when the stress is released. The stress of the silicon deposited on the surface of the inner wall of the fluidized bed is dispersed through the formation of the temperature layer and the concentration layer, which is conducive to extending the continuous operation time of the fluidized bed, avoiding reduction in product quality and / or shutdown for maintenance and overhaul due to rupture of the graphite components, thereby achieving long-term stable operation of the fluidized bed and extending the operation cycle of the fluidized bed.

The utility model discloses a filtering device and a chemical vapor deposition filtering system, which are applied to the technical field of film deposition. The filtering device provided by the utility model is arranged between the process coating cavity and the vacuum pump, the internal environment of the filtering tank is divided into the internal environment of the filtering element and the external environment of the filtering element through the filtering element in the filtering tank, and organic chemical gas which is introduced and does not participate in reaction during film deposition can be pumped into the filtering external environment in the filtering tank by the vacuum pump, so that the film deposition efficiency is improved. In the environment, the reaction is carried out with reactants provided by the feeding device, solid products generated by the reaction can be blocked in the filtering tank by the filtering element, and gas generated by the reaction can enter the filtering element and is pumped away by the vacuum pump. The organic chemical gas which does not participate in the reaction is reacted and deposited in the filtering device, so that the reaction lag is not caused, and the influence on a rear-end device is avoided.

Examples are disclosed that relate to etching carbon-containing films using an etching agent and a carbon-containing film precursor. This helps to etch the carbon-containing film at a higher rate on a field region of the substrate than within a feature. One example provides, on a substrate comprising a feature and a field region adjacent to the feature, a method of etching a carbon film deposited on the field region and within the feature. The method comprises forming a plasma using a gas mixture comprising an etching agent and a carbon-containing film precursor to generate reactive etching species and reactive deposition species. The method further comprises etching the carbon film at a higher rate in the field region than within the feature by depositing carbon within the feature during etching.

The application relates to the technical field of chemical vapor deposition, and discloses a device for forming a silicon carbide coating on the surface of a graphite product, which comprises a gas feeding assembly, and the gas feeding assembly comprises an outer shell, the inside of the outer shell is coaxially sleeved with an inner shell, two protection assemblies are arranged on the outer shell, one end of each of the two protection assemblies is communicated with the space between the outer shell and the inner shell, and a movable assembly is movably sleeved between the outer shell and the inner shell. When the device works, reaction gas is transported into the inner shell through a gas feeding pipe, and protective gas is transported into the outer shell through the first protection assembly, so that the reaction gas discharged from the inner shell is surrounded and protected by the protective gas discharged from the outer shell, the contact between the reaction gas just discharged from the gas feeding assembly and the hot gas in the outer shell is reduced, the instantaneous heating effect of the reaction gas is weakened, the reaction deposition phenomenon of the exhaust port of the inner shell is reduced, and the plugging probability of the exhaust port of the inner shell is reduced.