14 results about "Reactive deposition" patented technology

The invention discloses a preparation method and application of an H-Fe3O4 (at) C nanorod electrode material with a core-shell structure. Dissolving iron nitrate nonahydrate, urea, ammonium fluoride and other drugs in ultrapure water, immersing the carbon fiber cloth in the precursor solution, and carrying out a hydrothermal reaction; after the reaction is completed, cooling to room temperature, washing and sintering to obtain a Fe3O4 nanorod taking the carbon fiber cloth as the substrate; putting the Fe3O4 nanorod serving as a working electrode into a deposition solution of potassium chloride and a pyrrole monomer, and carrying out a constant-pressure deposition reaction; after deposition is completed, washing and sintering are carried out, and the Fe3O4 (at) C core-shell nanorod is obtained. And finally, carrying out rapid Joule heat treatment to further graphitize the carbon layer, cooling, and taking out to obtain the H-Fe3O4 (at) C nanorod. The H-Fe3O4 (at) C nanorod is used as a negative electrode to assemble the asymmetric supercapacitor, the capacitance retention rate of the supercapacitor is 93.7% after 25000 cycles of charge and discharge, the capacitance retention rate is far higher than that of most current pseudocapacitance supercapacitors, and the self-discharge rate of the capacitor is inhibited while good electrochemical stability is achieved.

A method for deposition of silicon and nitrogen containing dielectric film via an atomic layer deposition (ALD) or in an ALD-like process. The method includes the steps of a) providing at least one substrate into a reactor and heating the reactor to at least one temperature ranging from about 25° C. to about 600° C. and optionally maintaining the reactor at a pressure of about 100 torr or less; b) introducing into the reactor at least a first precursor comprising a halogenated silicon-containing compound that forms a silicon-containing layer; c) purging any unreacted precursor from the reactor using inert gas; d) introducing at least a second precursor, comprising at least two or more primary amino-containing silicon atoms, which reacts with the silicon-containing layer to form a film comprising silicon and nitrogen; e) purging the reactor using inert gas; f) introducing a plasma source into the reactor to react with the film comprising silicon and nitrogen; g) purging any reaction by-products from the reactor using inert gas, and repeating steps b to g to bring the film comprising silicon and nitrogen to a desired thickness.

The application provides a reference electrode of a three-electrode battery, a three-electrode battery and a vehicle. The reference electrode is provided with a diaphragm between a positive electrode of the three-electrode battery and a negative electrode of the three-electrode battery; the reference electrode comprises a copper-antimony composite material, and a lithium-containing compound is deposited on the surface of the reference electrode through an alloying reaction. Thus, lithium can be fixed on the surface of the reference electrode, lithium can be uniformly deposited on the surface of the reference electrode, and the lithium is not prone to reacting with an electrolyte in a subsequent cycle process, so that the lithium deposited on the surface of the reference electrode can be effectively prevented from being destroyed, and the reference electrode can have good structural stability and potential stability.

This invention discloses a multiphase reactive deposition apparatus and a method for analyzing gallium oxide growth behavior. The method includes: meshing a pre-constructed three-dimensional geometric model of a horizontal reaction chamber to obtain a mesh file; importing the mesh file into fluid dynamics simulation software, setting boundary conditions, and obtaining a physical model; constructing a computational model based on the flow motion of gallium acetylacetonate droplets, vaporization phase transition, gas-phase oxidation reaction, and the deposition process of reaction products on the substrate surface; selecting a multiphase flow solver based on the physical and computational models; inputting material and control parameters into the multiphase flow solver to obtain simulation results; and obtaining α-Ga₂O₃ growth behavior analysis results based on the constructed multiphase reaction coupling model and simulation results. The multiphase reaction coupling model is used to calculate the mutual influence between physical fields. The method provided by this invention can predict gallium oxide growth behavior, providing support for optimizing deposition process parameters and improving thin film growth uniformity.

Methods of modifying properties of a cellulosic material include depositing an additive onto the cellulosic material, the additive being in a vapor phase and configured to modify one or more properties of the cellulosic material and adsorbing the additive into the cellulosic material, wherein the additive reacts with one or more functional groups of the cellulosic material. The depositing can be an atomic layer deposition of the additive onto the cellulosic material. The additive can be configured to react with a nucleophile in the cellulosic material. One or more properties of the cellulosic material can include hydrophobicity, thermal conductivity, thermal diffusivity, fungo-toxicity, toxicity, wettability, tensile strength, corrosiveness, biodegradability, bio-toxicity, or swelling.

The utility model relates to a kind of polyphenylamine optical fiber pH sensor automated preparation system, and a kind of pH sensor preparation device;To solve the problem of poor consistency and poor preparation efficiency in the preparation process of existing polyphenylamine optical fiber pH sensor;The novel includes three-axis motion control platform, film layer solidification unit, reaction deposition unit and control unit;Reaction deposition unit is used for the sensitive film layer deposition of the optical fiber of sensor;Film layer solidification unit is used for curing to sensitive film layer deposition;Control unit controls three-axis motion control platform to carry sensor in turn in reaction deposition unit and carries out sensitive film layer reaction deposition and in film layer solidification unit sensitive film layer solidification.The beneficial effect is to improve the purpose of preparation efficiency and consistency, reduce manual operation, improve experimental efficiency.

The invention relates to the technical field of chemical vapor deposition, and discloses equipment for forming a silicon carbide coating on the surface of a graphite product, the equipment comprises a gas supply assembly, the gas supply assembly comprises an outer shell, the inner part of the outer shell is coaxially sleeved with an inner shell, and two protection assemblies are arranged on the outer shell. And one ends of the two protection assemblies communicate with the space between the outer shell and the inner shell, and a movable assembly is movably connected between the outer shell and the inner shell in a sleeving mode. When the device works, reaction gas is conveyed into the inner shell through the gas supply pipe, and protective gas is conveyed into the outer shell through the first protective assembly, so that the reaction gas discharged from the inner shell is surrounded and protected by the protective gas discharged from the outer shell, and the contact between the reaction gas just discharged from the gas supply assembly and hot gas in the outer shell mechanism is reduced; the instantaneous heating effect of reaction gas is weakened, so that the situation that reaction deposition occurs at the exhaust port of the inner shell is reduced, and the probability that the exhaust port of the inner shell is blocked is reduced.

This invention discloses a superhydrophobic composite passivation film and its preparation method, belonging to the field of coating preparation technology. The invention involves sequentially forming a zirconium-based chemical conversion film and a fluorinated functionalized silica layer on a substrate surface to obtain the superhydrophobic composite passivation film. The zirconium-based chemical conversion film and the fluorinated functionalized silica layer are connected by Si-O-Zr or Si-O-Al covalent bonds. The zirconium-based chemical conversion film is obtained by deposition through dissociation coordination and interfacial redox reactions using fluorozirconate, fluoride, vanadate, and manganese nitrate as raw materials; the fluorinated functionalized silica layer is obtained by spraying nano-silica after fluorination and functionalization with perfluorosilane. This invention organically couples an inorganic passivation film with a superhydrophobic micro / nano structure, resulting in a superhydrophobic composite passivation film with a static water contact angle ≥150° and a static oil contact angle ≥150°, achieving dual repulsion of water and oil, and reducing the emission of volatile organic compounds during the preparation process.

The application relates to the technical field of chemical vapor deposition, and discloses a device for forming a silicon carbide coating on the surface of a graphite product, which comprises a gas feeding assembly, and the gas feeding assembly comprises an outer shell, the inside of the outer shell is coaxially sleeved with an inner shell, two protection assemblies are arranged on the outer shell, one end of each of the two protection assemblies is communicated with the space between the outer shell and the inner shell, and a movable assembly is movably sleeved between the outer shell and the inner shell. When the device works, reaction gas is transported into the inner shell through a gas feeding pipe, and protective gas is transported into the outer shell through the first protection assembly, so that the reaction gas discharged from the inner shell is surrounded and protected by the protective gas discharged from the outer shell, the contact between the reaction gas just discharged from the gas feeding assembly and the hot gas in the outer shell is reduced, the instantaneous heating effect of the reaction gas is weakened, the reaction deposition phenomenon of the exhaust port of the inner shell is reduced, and the plugging probability of the exhaust port of the inner shell is reduced.

This invention discloses the preparation of phase change microcapsules with energy storage and photothermal conversion properties and their application in thermal insulation coatings. It relates to the field of microencapsulated phase change materials technology, including core-shell structured microcapsules prepared with organic phase change materials as the core and copper silicate as the shell, with a core-to-shell mass ratio of 1:0.5–1.5. This invention employs an in-situ interfacial reaction deposition method, constructing an oil-water two-phase emulsion template, and with the assistance of an emulsifier, allowing inorganic precursors to undergo a chemical precipitation reaction at the interface to form a continuous and dense inorganic copper silicate shell. These microcapsules not only utilize phase change materials such as paraffin to achieve high-density thermal energy storage, but also leverage the efficient photothermal conversion and photocatalytic degradation characteristics of the copper silicate shell to achieve an integrated design of photothermal conversion, anti-pollution, and thermal energy storage. These phase change microcapsules exhibit excellent temperature buffering and energy storage performance, demonstrating a good thermal barrier effect and active thermal regulation capability in coatings, and have broad application prospects in building energy conservation, solar thermal collection, and thermal protection.

The application provides a metal-doped biomass carbon negative electrode material and a preparation method thereof, wherein the preparation method comprises the following steps: soaking biomass powder in an acidic activator, adding a pore inducer, and performing high-temperature activation treatment to obtain activated porous carbon; a mixed metal salt solution is prepared, the activated porous carbon is added into the mixed metal salt solution, and stirring and standing are sequentially performed; after being dried through suction filtration, an intermediate is obtained; the intermediate is placed into a gas-phase deposition reaction cavity, heating is performed under the protection of nitrogen, a silicon source gas and a germanium source gas are introduced to perform a deposition reaction, and the metal-doped biomass carbon negative electrode material is obtained after cooling. Through structural design and element function synergistic integration, the comprehensive electrochemical performance of the metal-doped biomass carbon negative electrode material is significantly improved, and the problems of insufficient stability and capacity utilization rate of traditional doped materials are overcome.

The invention relates to a method for preparing a metal rhenium coating by taking carbon tetrachloride as a chlorine source, which comprises the following steps: S1, under the conditions of 5-50kPa and 700-900 DEG C, introducing mixed gas of carbon tetrachloride and argon into raw material rhenium powder, and reacting to obtain rhenium pentachloride; and S2, the rhenium pentachloride obtained in the step S1 reacts under the conditions that the pressure is 5-50 kPa and the temperature is 1000-1300 DEG C, the rhenium pentachloride is deposited on a workpiece, the temperature is reduced to the room temperature, and the metal rhenium coating is obtained. The metal rhenium coating is good in compactness.

An effective device for realizing silicon doping in diamond, using an MPCVD system, including a gas control module, a microwave module and a reaction deposition module including a reaction chamber; the reaction deposition module includes a quartz window, a reaction chamber, a sample table and a sample holder, the microwave enters the reaction chamber through the quartz window, and the sample holder is placed on the sample table in the reaction chamber; the sample holder is in the shape of a cylinder, there is a gas inlet ring around the sample holder for gas to enter from below, the center of the sample holder with a hole has a through hole with a diameter of 2mm for gas to enter from below, there is an inclined surface around the through hole of the sample holder, the inclined surface has different angles with the horizontal surface of 0-90°, the angle of the substrate is changed, and different angle deposition growth is carried out; methane and nitrogen are introduced into the chamber from below through the through hole of the sample holder, the temperature is between 760-780℃, and a nitrogen-silicon doped diamond film with gradient distribution is prepared.

A method for the reactive deposition of crystalline, aluminum-polar or nitrogen-polar layers containing or consisting of AlN onto a foreign substrate is provided. In this method, a magnetron sputtering unit is provided, the foreign substrate is heated to a temperature of < 800 °C, a pulsed electrical voltage with a duty cycle of <1 is applied between a magnetron and the foreign substrate, and the magnitude of the applied pulsed electrical voltage, the duty cycle, and / or the amount of nitrogenous gas supplied to the vacuum chamber from a gas source are regulated based on the concentration of aluminum and nitrogen atoms in the vacuum chamber, determined by a detector, such that a metallic operating point or a reactive operating point is established.Furthermore, a system is provided that is configured for the reactive deposition of crystalline, aluminium-polar or nitrogen-polar layers containing or consisting of AlN onto a foreign substrate.