Al-rich corundum structure Al-Cr-O thin film and preparation method thereof

A technology of al-cr-o and corundum, which is applied in the field of Al-rich corundum structure Al-Cr-O film and its preparation, can solve the problem of reducing stability and reliability, difficult practical application, and reducing corundum structure Al-Cr-O Deposition temperature and other issues, to achieve the effect of small friction coefficient and good thermal stability

Active Publication Date: 2020-07-28
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Pure corundum α-Al with the highest stability 2 o 3 The thin film needs to be obtained at a high temperature above 1000°C, and below this deposition temperature, only Al containing metastable and stable phases can be obtained. 2 o 3 A series of mixed-phase thin films, severely reducing the Al 2 o 3 Stability and reliability, difficult to practical application
α-Cr 2 o 3 The film can be deposited at a low temperature of 300°C, and α-Cr is doped when depositing alumina 2 o 3 Can significantly reduce the deposition temperature of corundum structure Al-Cr-O, the higher the Cr content, the lower the required deposition temperature, but significantly reduce the thermal and chemical stability of Al-Cr-O

Method used

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  • Al-rich corundum structure Al-Cr-O thin film and preparation method thereof
  • Al-rich corundum structure Al-Cr-O thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Deposition of Al-corundum Al-Cr-O Thin Films on W9Mo3Cr4V High Speed ​​Steel

[0028] (1) Customized Φ60*3mm Al 70 Cr 30 and pure Cr target, installed on the corresponding target station, adjust the target base distance to 80mm.

[0029] (2) Cut the W9Mo3Cr4V high-speed steel quenched + 560°C and tempered three times into Φ15×5mm size, polished to a mirror surface, ultrasonically cleaned in acetone and absolute ethanol for 15min, dried and placed on the sample stage.

[0030] (3) Pre-evacuate to 10Pa, turn on the infrared baking system and heat to 150°C, and then evacuate to 5×10 -4 Pa, turn off the bake, heat the substrate to 550°C, and continue vacuuming to 5×10 -4 Pa.

[0031] (4) Introduce Ar gas, adjust the air pressure to 1.0Pa, maintain the temperature at 550°C, use a DC power supply to sputter a pure Cr target, and the target power density is 5.3W / cm 2 , the sputtering time is 20min, and a Cr transition layer of 0.5-0.6um is obtained.

[0032] (5) Turn the...

Embodiment 2

[0037] Deposition of Al-corundum Al-Cr-O Thin Films on W9Mo3Cr4V High Speed ​​Steel

[0038] (1) Customized Φ60*3mm Al 70 Cr 30 and pure Cr target, installed on the corresponding target station, adjust the target base distance to 80mm.

[0039] (2) Cut the W9Mo3Cr4V high-speed steel quenched + 560°C and tempered three times into Φ15×5mm size, polished to a mirror surface, ultrasonically cleaned in acetone and absolute ethanol for 15min, dried and placed on the sample stage.

[0040] (3) Pre-evacuate to 10Pa, turn on the infrared baking system and heat to 150°C, and then evacuate to 5×10 -4 Pa, turn off the bake, heat the substrate to 550°C, and continue vacuuming to 5×10 -4 Pa.

[0041] (4) Introduce the Ar body, adjust the air pressure to 1.0Pa, maintain the temperature at 550°C, use a DC power supply to sputter a pure Cr target, and the target power density is 5.3W / cm 2 , the sputtering time is 20min, and a Cr transition layer of 0.5-0.6um is obtained.

[0042] (5) Tur...

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PUM

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Abstract

The invention belongs to the technical field of metal and oxide coatings thereof, and discloses an Al-rich corundum structure Al-Cr-O thin film and a preparation method thereof. Firstly, a DC magnetron sputtering pure Cr target is used for preparing a pure Cr transition layer under the Ar gas condition and the matrix temperature ranging from 540 DEG C to 560 DEG , then the pulse DC negative bias voltage within the range from -150 V to -100 V is applied to a matrix, Ar+O2 mixed gas with the O2 partial pressure being 10%-12.5% is input, the matrix temperature is adjusted to range from 540 DEG Cto 560 DEG C, a radio frequency magnetron sputtering Al70Cr30 alloy target is used for reaction deposition, and the Al-rich corundum structure Al-Cr-O thin film is obtained. The thin film is composedof alpha-Al2O3 and alpha-(Al,Cr)2O3, and the maximum Al content can reach 39.9wt%.

Description

technical field [0001] The invention belongs to the technical field of metal and oxide coatings thereof, and in particular relates to an Al-Cr-O film with an Al-rich corundum structure and a preparation method thereof. Background technique [0002] Al-Cr-O oxide ceramics with a corundum structure have excellent properties such as high temperature hardness, good oxidation resistance, high electrical insulation, and low tritium permeability. layer material. Al-Cr-O ceramics with corundum structure is α-Cr 2 o 3 and α-Al 2 o 3 The solid solution composed of Al-O bonds and Cr-O bonds at the same time, the bonding energy of Cr-O bonds is significantly lower than that of Al-O bonds, resulting in the higher the Cr content, the higher the Cr-O bond content, the corundum structure Al-Cr -O has lower thermal and chemical stability. Pure corundum α-Al with the highest stability 2 o 3 The thin film needs to be obtained at a high temperature above 1000°C, and below this depositio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/16C23C14/08C23C14/54C23C14/02
CPCC23C14/0036C23C14/022C23C14/08C23C14/165C23C14/35C23C14/541
Inventor 邱万奇万健焦东玲钟喜春刘仲武
Owner SOUTH CHINA UNIV OF TECH
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