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MXene two-dimensional material as well as preparation method and application thereof

A two-dimensional material and reaction technology, applied in the field of materials, can solve problems such as long time, not environmentally friendly, and difficult to control, and achieve the effects of saving preparation processes, large specific surface area, and shortening time

Active Publication Date: 2020-10-09
NANCHANG INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it can be seen that the existing methods for synthesizing MXene mainly have the following disadvantages: (1) the etching solution is highly toxic and highly corrosive, which is dangerous and not environmentally friendly; (2) the reaction speed of the synthesis process is slow and usually takes a long time And it is not easy to control, and the cost is high; (3) The synthesized MXene usually contains terminal functional groups such as F-, which has an adverse effect on its performance as an electrode and its composite material

Method used

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  • MXene two-dimensional material as well as preparation method and application thereof
  • MXene two-dimensional material as well as preparation method and application thereof
  • MXene two-dimensional material as well as preparation method and application thereof

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preparation example Construction

[0035] A preparation method of MXene two-dimensional material, comprising the following steps:

[0036] Step 1: preparing a reaction deposition solution of fluorine-containing salt and boric acid;

[0037] Step 2: placing the MXene precursor in the reaction deposition liquid in step 1 for hydrothermal reaction to obtain a suspension;

[0038] Step 3: Centrifuge the suspension in step 2, take the suspension, wash it to neutral, and dry to obtain the MXene two-dimensional material, wherein the washing can be alternately washed with deionized water and ethanol.

[0039] In the second step, ultrasonic treatment is performed while hydrothermal reaction is performed, specifically, the ultrasonic treatment time is 1-3 hours.

[0040] In the second step, the reaction temperature of the hydrothermal reaction is 90-180°C, and the reaction time is 1-12h.

[0041] In the second step, the hydrothermal reaction uses a hydrothermal reaction kettle made of polyvinyl fluoride, and the high-t...

Embodiment 1

[0054] Configure 0.03mol / L (NH 4 ) 2 TiF 6 solution and 0.09mol / L H 3 BO 3 Solution, magnetically stirred and mixed evenly to make a reaction deposition solution, weighed 0.02g Ti 3 AlC 2 Add the reaction deposition liquid, put the reaction deposition liquid into a 100mL hydrothermal reaction kettle, then put the hydrothermal reaction kettle into an oven to synthesize and react at 110° C. for 3 hours. After the reaction, the obtained suspension was centrifuged, and the lower suspension was removed, washed alternately with deionized water and ethanol until neutral, and then the obtained solid was vacuum-dried at 80°C for 24 hours to obtain Ti 3 C 2 -MXene / TiO 2 Powder material.

Embodiment 2

[0056] Configure 0.03mol / L (NH 4 ) 2 TiF 6 solution and 0.09mol / L H 3 BO 3 Solution, magnetically stirred and mixed evenly to make a reaction deposition solution, weighed 0.02g Ti 3 AlC 2 Add the reaction deposition liquid, put the reaction deposition liquid into a 100mL hydrothermal reaction kettle, then put the hydrothermal reaction kettle into an oven to synthesize and react at 130° C. for 3 hours. After the reaction, the obtained suspension was centrifuged, and the lower suspension was removed, washed alternately with deionized water and ethanol until neutral, and then the obtained solid was vacuum-dried at 80°C for 24 hours to obtain Ti 3 C 2 -MXene / TiO 2 Powder material.

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Abstract

The invention discloses an MXene two-dimensional material and a preparation method thereof, and belongs to the field of materials. The MXene two-dimensional material comprises an MXene precursor and areaction deposition solution, wherein the reaction deposition solution is a mixed solution of villiaumite and boric acid; the villiaumite comprises one or more of ammonium fluoride, ammonium hydrogenfluoride and metal fluoride salt; the molar ratio of villiaumite to boric acid in the mixed solution is (0.01-0.3):(0.02-1.5), and the MXene precursor comprises any one or a combination of more thantwo of Ti3AlC2, Ti2AlC, V2AlC, Mo2AlC and Nb2AlC. According to the MXene two-dimensional material, villiaumite and boric acid are adopted as reaction deposition solution, the reaction is mild and easyto control, and the prepared MXene two-dimensional material has large interlayer spacing and large specific surface area. The invention further discloses a preparation method of the MXene two-dimensional material and application of the MXene two-dimensional material to electrode preparation.

Description

technical field [0001] The invention relates to the field of materials, in particular to an MXene two-dimensional material and its preparation method and application. Background technique [0002] MXene, a new type of graphene-like two-dimensional nanomaterial, is widely used as a photoelectric material and its energy environment due to its unique advantages such as high specific surface area, excellent electronic conductivity and abundant surface hydrophilic functional groups. The application field shows great potential: (1) The surface of MXene contains a large amount of -OH and -O, which can establish a strong correlation with a variety of semiconductor surfaces; (2) Excellent electrical conductivity helps photogenerated charge-carrier efficiency (3) Good hydrophilicity ensures full contact with aqueous solution and stable existence. [0003] Since 2011, the research group of Michel Barsoum, a professor at Drexel University in the United States, used hydrofluoric acid (H...

Claims

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Application Information

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IPC IPC(8): H01M4/36H01M4/583C01B32/90C01B32/921C01G23/053
CPCC01G23/053C01P2002/72C01P2004/03C01P2004/04C01B32/90C01B32/921H01M4/364H01M4/583Y02E60/10
Inventor 刘宇胡军平刘宁刘勇红
Owner NANCHANG INST OF TECH
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