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Technique for cutting horizontal gallium arsenide single-crystal wafer with inside diameter slicer

A technology of inner circle slicing and gallium arsenide, which is applied in the direction of manufacturing tools, stone processing tools, stone processing equipment, etc., can solve the problems of difficult control of mechanical stress and thermal stress residual stress of horizontal GaAs wafers, and achieve production stability and Good repeatability, good surface finish, and optimized cutting conditions

Inactive Publication Date: 2008-02-27
GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] During the slicing process, the residual stress problem including mechanical stress and thermal stress caused by mechanical force on the horizontal GaAs wafer is difficult to control

Method used

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  • Technique for cutting horizontal gallium arsenide single-crystal wafer with inside diameter slicer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] The specifications for cutting horizontal gallium arsenide wafers by adopting the process of the invention are: crystal orientation (100)±0.5°, diameter Φ50.8mm, thickness 470±50um, round wafer.

[0039] 1. Equipment and equipment technical indicators:

[0040] TS type horizontal air bearing rotary table (cutting angle up to 61 degrees) inner circle slicer (this equipment is produced and sold by Meyerberg, Switzerland).

[0041] Blade type: Φ422mm, blade thickness: 300um Material: stainless steel knife base, nickel alloy emery plated

[0042] Blade inner diameter tensor: 0.85mm-1.05mm, concentricity ≤0.002mm

[0043] Circular run-out deviation of knife ring end face: ≤0.006mm

[0044] Radial runout deviation of cutter ring: ≤0.03mm

[0045] Radial runout of blade positioning pin: ≤0.015mm

[0046] Workpiece feed accuracy (step error) ±0.005mm

[0047] 2. Process conditions

[0048] Blade speed: 1100-1600r / min

[0049] Cutting speed: 20-30mm / min

[0050] Coolant: demineraliz...

Embodiment 2

[0064] The specifications for cutting horizontal gallium arsenide wafers using the process technology of the present invention are: crystal orientation (100) offset (110) ± 0.5°, diameter Φ 63.5 mm, thickness 350 ± 50um, round wafer.

[0065] 1. Equipment and equipment technical indicators:

[0066] TS type horizontal air-bearing rotary table (with an angle of up to 61 degrees) inner circle slicer.

[0067] Blade type: Φ422mm, blade thickness: 300um Material: stainless steel knife base, nickel alloy emery plated

[0068] Blade inner diameter tensor: 0.9mm-0.95mm, concentricity ≤0.002mm

[0069] Circular runout deviation of the knife ring end face: ≤0.0055mm

[0070] Radial runout deviation of cutter ring: ≤0.025mm

[0071] Radial runout of blade positioning pin: ≤0.015mm

[0072] Workpiece feed accuracy (step error) ±0.005mm

[0073] 2. Process conditions

[0074] Blade speed: 1100-1400r / min

[0075] Cutting speed: 15-30mm / min

[0076] Coolant: demineralized water (industrial pure...

Embodiment 3

[0082] The specifications for cutting horizontal gallium arsenide wafers using the process technology of the present invention are: crystal orientation (100) offset (011) ±0.1°, diameter Φ63.5mm-76mm, thickness 280±20um, round wafer.

[0083] 1. Equipment and equipment technical indicators:

[0084] TS type horizontal air-bearing rotary table (with an angle of up to 61 degrees) inner circle slicer.

[0085] Blade inner diameter tensor: 0.95mm-1.05mm, concentricity ≤0.002mm

[0086] Circular runout deviation of the knife ring end face: ≤0.005mm

[0087] Radial runout deviation of cutter ring: ≤0.02mm

[0088] Radial runout of blade positioning pin: ≤0.015mm

[0089] Workpiece feed accuracy (step error) ±0.005mm

[0090] 2. Process conditions

[0091] Blade speed: 1100-1250r / min

[0092] Cutting speed: 10-25mm / min

[0093] Coolant: demineralized water (industrial pure water)

[0094] Coolant temperature: 10-20℃

[0095] Coolant flow: 600-650ml / min

[0096] Cutting workpiece: the qua...

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Abstract

The invention relates to a process that inside diameter slicing machine is used to cut level gallium arsenide single-crystal wafer, which comprises following procedures. (1) edge cutting treatment is carried out for level gallium arsenide single-crystal ingot with the length of 50-500mm. (2) the single-crystal ingot is bonded with the surface of graphite strip and the surface of graphite support. (3) bonded single-crystal ingot is fixed on the ingot-pushing device of inside diameter slicing machine. (4) cutting blade is installed; switch is on and the machine runs. (5) working table is lift and a piece of wafer is cut to confirm crystal orientation; after confirmation calibrating thickness of single-wafer cutting is set; said cutting orientations are parts of (100) to the nearest [100] and [011]; the angle between the crystal orientation and the growth orientation of gallium arsenide single crystal is 54degree 44'. (6) cutting speed is set to cut wafers in multiple piece automatically and continuously. (7) after the whole single-crystal ingot is cut cutting blade is washed and machine is off. Level gallium arsenide single-crystal wafer with the diameter of Phi50. 8mm-Phi76mm and the thickness of 280um-470um can be cut in the process and average production yield can be more than 95%. Production stability and repeatability are good and mass production can be realized.

Description

Technical field [0001] The invention relates to a process for cutting a horizontal gallium arsenide single wafer by an inner circle slicer Background technique [0002] In the early 1960s, the cutting method for Czochralski semiconductor single crystal materials changed from using external circular blade processing to internal circular blade processing, which was a major technological advancement. Developed countries such as Japan and the United States have begun mass production of gallium arsenide single crystal materials in the 1980s, but the wafer processing technology they use is strictly confidential and few articles have been published. At present, the international level of gallium arsenide wafers has been widely used, and the cutting methods include inner circle slicing and (multi-)line slicing. The domestic (multi) wire cutting technology currently only stops at cutting single wafers with a diameter of Φ50.8mm. In the international market, there is a great demand for hor...

Claims

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Application Information

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IPC IPC(8): B28D1/22H01L21/304
Inventor 夏海波龙彪郑安生
Owner GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
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