Silica tube for growing semi-insulated gallium arsenide and method for doping carbon in gallium arsenide

Abstract

The invention relates to a method for doping carbon in the gallium arsenide by using a silica tube for growing semi-insulated gallium arsenide. The method comprises the following steps: step 1: polycrystally synthesizing 7N Ga and 7N As to form a GaAs polycrystal; step 2: putting the synthesized GaAs polycrystal, seed crystal and B2O3 in a PBN crucible; step 3: putting the PBN crucible in a quartz body of the silica tube; step 4: fixing pure graphite in a silica groove on a silica cap of the silica tube; step 5: covering the quartz body and the silica cap, vacuumizing and welding the quartz body and the silica cap of the silica tube on oxyhydrogen flame; step 6: putting the welded silica tube in a VGF single crystal furnace for atmosphere doping and single crystal growth; and step 7: soaking the PBN crucible in methanol after the single crystal growth to obtain a GaAs single crystal and finish the preparation of the GaAs single crystal.

Description

technical field [0001] The invention relates to the VGF (vertical gradient solidification) technology of high-performance compound semiconductor SI-GaAs single crystal. The material is widely used mainly in the field of high-speed microelectronics, such as power amplifiers in radio frequency circuits, microwave monolithic integrated circuits (MMICs), etc. Background technique [0002] GaAs has excellent electrical properties such as high electron mobility, direct band gap, and wide band gap, and has been widely used in the fields of optoelectronics and microelectronics. For microelectronic ultra-high-speed circuits, semi-insulating SI-GaAs single crystals are required, that is, they have high resistance (greater than 10 7 Ω·cm). Generally speaking, high-purity GaAs itself is semi-insulating, but due to the complicated preparation process and high cost, industrial production uses compensation principles to achieve high resistance. [0003] With the continuous development o...

AI Technical Summary

Problems solved by technology

However, under the vertical gradient solidification process of the quartz tube-PBN system currently used, it is difficult to achieve atmosphere doping

First, there is no contact with ℃ in the entire growth system, and secondly, the currently used quartz tube is mainly designed to provide a high vacuum environment for crystal growth, and the structure of the quartz tube cannot meet the requirements of atmosphere doping

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