Phase change memory and manufacturing method thereof

Abstract

The method relates to a phase change memory and a method for manufacturing the same. The phase change memory includes: a substrate; a first electrode layer formed on the substrate; a dot shape phase change post formed on the first electrode layer; a dielectric layer formed on the first electrode layer which covers the dot shape phase change post side, and exposes the dot shape phase change post upper surface; and a second electrode layer formed on the dielectric layer and the dot shape phase change post, therein, two-dimensional of the dot shape phase change post upper surface also is less than exposal limit.

Description

technical field [0001] The present invention relates to a phase-change memory and a manufacturing method thereof, in particular to a phase-change memory that reduces the contact area between a phase-change layer and an electrode and a manufacturing method thereof. Background technique [0002] Phase change memory has the characteristics of high read speed, low power, high capacity, high reliability, high write and erase times, low operating voltage / current and low cost, and is very suitable for combining with CMOS technology and can be used as a higher density Stand-alone or embedded memory applications are currently very promising next-generation new memories. Due to the unique advantages of phase change memory technology, it is also considered to be very likely to replace the current commercially competitive SRAM and DRAM volatile memory and Flash non-volatile memory technology, and it is expected to become a new generation with great potential in the future semiconductor...

AI Technical Summary

Problems solved by technology

However, in this structure, the part that forms the electrical connection path is a hole-filling process, which has considerable limitations in terms of heating efficiency and electrical uniformity of the contact surface.

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