Method for preparing Nano cerium oxdie, and application in chemical mechanical polishing chip of gallium arsenide

A technology of nano-cerium oxide and cerium nitrate, applied in chemical instruments and methods, polishing compositions containing abrasives, inorganic chemistry, etc., to achieve uniform distribution, low surface roughness, small surface and subsurface damage

Inactive Publication Date: 2006-04-19
JIANGSU POLYTECHNIC UNIVERSITY
View PDF0 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, GaAs is an important substrate material for ultra-large-scale integrated circuits. Due to its high brittleness and easy cleavage, its processing has become a major problem in the manufacture of GaAs integrated circuits. At present, nano-SiO is commonly used for GaAs polishing in the world. 2 Abrasives, while nano-CeO 2 It has not been reported as its polishing material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing Nano cerium oxdie, and application in chemical mechanical polishing chip of gallium arsenide
  • Method for preparing Nano cerium oxdie, and application in chemical mechanical polishing chip of gallium arsenide
  • Method for preparing Nano cerium oxdie, and application in chemical mechanical polishing chip of gallium arsenide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] Embodiment 1: take a certain amount of Ce (NO 3 ) 3 Dissolve in 150ml ethanol, then weigh a certain amount of HMT and dissolve it in 50ml distilled water, mix the two solutions and stir evenly, where [Ce 3+ ]=0.02mol / 1, HMT and Ce(NO 3 ) 3 The molar ratio is 20:1. Put the mixed solution into a constant temperature water bath at 75°C and heat it for 1 hour, take it out and let it cool and let it stand for 1 hour at room temperature, wash the precipitate with distilled water 3 times and absolute ethanol once, and put it in an oven at 70°C Dry in medium for 8 hours, take out and cool down, and grind the powder thoroughly. Take a certain amount of powder and configure it into a 100ml solution, the solute mass concentration is 1wt%, add the oxidizing agent H 2 o 2 The concentration is 20wt%, and KOH is added to adjust the pH value to 9. Under a certain polishing pressure (2N), rotational speed (200rmp) and time (25min), the GaAs wafer is polished using the American Bueh...

Embodiment 2

[0014] Embodiment 2: change solution parameter [Ce 3+ ] is 0.01mol / 1, HMT and Ce(NO 3 ) 3 The molar ratio is 40:1, the volume ratio of alcohol to water is 1:1, heated in a water bath at 70°C for 2h, aged for 1h, and dried at 60°C for 10h. Take an appropriate amount of powder to prepare a solution, the solute mass concentration is 2wt%, add oxidizing agent H 2 o 2 The concentration is 10wt%, the pH value is adjusted to 10 with KOH, and the subsequent polishing process is as in Example 1.

Embodiment 3

[0015] Embodiment 3: change solution parameter [Ce 3+ ] is 0.03mol / 1, HMT and Ce(NO 3 ) 3 The molar ratio is 30:1, the volume ratio of alcohol to water is 6:1, heated in a water bath at 80°C for 1h, aged for 2h, and dried at 80°C for 6h. Take an appropriate amount of powder to prepare a solution, the solute mass concentration is 5wt%, add oxidizing agent H 2 o 2 The concentration is 10wt%, the pH value is adjusted to 11 with KOH, and the subsequent polishing process is the same as above.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
sizeaaaaaaaaaa
surface roughnessaaaaaaaaaa
Login to view more

Abstract

A process for preparing cerium oxide nanoparticles includes such steps as proportionally dissolving cerium nitrate and hexamethylenetetraamine (HMT) respectively in alcohol and distilled water, mixing, stirring, sealing, heating at 70-90 deg.C for 1-2 hr, cooling, ageing for 1-2 hr, filter, washing deposit, and drying at 60-80 deg.C for 6-10 hr. The obtained CeO2 nanoparticles can be used to prepare the polishing liquid for polishing the semiconductor wafer of gallium arsenide.

Description

technical field [0001] The invention relates to the field of ultrafine powder preparation and its application, in particular to a preparation method of nano cerium oxide and its use in chemical mechanical polishing of gallium arsenide wafers. Background technique [0002] Rare earth oxide CeO 2 It is a cheap and versatile material, widely used in luminescent materials, electronic ceramics, radiation-resistant glass, polishing powder, ultraviolet absorbing materials, fuel cells, automotive exhaust purification catalytic materials, etc., and has great development in modern high-tech fields Potential, many of these applications are based on powder, and the development of high technology has a great impact on CeO 2 The requirements are getting higher and higher, so nano-CeO 2 The preparation of powders has become one of the hotspots in research all over the world. At the same time, GaAs is an important substrate material for ultra-large-scale integrated circuits. Due to its h...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01F17/00C09G1/02C09G1/04
Inventor 陈志刚李霞章陈杨陈建清
Owner JIANGSU POLYTECHNIC UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap